CN215481412U - Single crystal furnace provided with isolating device - Google Patents

Abstract

The utility model relates to a single crystal furnace provided with an isolating device, which comprises a feeding pipe, a heat shield support ring, an outer crucible and an inner crucible which are concentrically arranged, wherein the heat shield support ring is provided with a first feeding hole, and the feeding pipe passes through the first feeding hole and is communicated with an inner cavity of the outer crucible, and the single crystal furnace also comprises: the isolation device comprises an isolation ring, the inner edge of the isolation ring surrounds the outer wall of the inner crucible, and the region between the outer edge of the isolation ring and the inner edge of the isolation ring isolates the inner cavity of the outer crucible from the inner cavity of the inner crucible so as to prevent silicon material added into the outer crucible from the feeding pipe from splashing into the inner crucible cavity; and the connecting piece is detachably connected with the isolating device and the heat shield support ring. The isolation device can better prevent the problem that the silicon material splashes to the inner crucible from the outer crucible in the process of adding the silicon material into the feeding pipe.

Description

Single crystal furnace provided with isolating device

Technical Field

The utility model relates to the technical field of single crystal manufacturing, in particular to a single crystal furnace with an isolating device.

Background

At present, the improvement of reducing the energy consumption for manufacturing the monocrystalline silicon mainly goes around two aspects, namely, the mode of feeding is changed, namely, the blowing-out feeding is changed into the blowing-out feeding; and secondly, changing a method for drawing a single silicon rod, namely changing the method for drawing the single silicon rod by a step method into the method for continuously drawing the single silicon rod.

In the existing design scheme of continuous feeding without stopping the furnace, a scheme of manufacturing monocrystalline silicon by adopting a plurality of crucibles exists, for example, the monocrystalline silicon is manufactured by respectively melting silicon materials by adopting an outer crucible and an inner crucible, and the sizes of the outer crucible and the inner crucible are different, so that the time for adding the silicon materials in the process of producing the monocrystalline silicon can be different. When it is desired to add silicon to one of the crucibles, this may result in silicon material being splashed from one crucible into the other during the delivery of the silicon material, due to the lack of shielding between the upper ends of the crucibles, for example when the outer crucible is being fed, this may result in silicon material being added to the outer crucible being splashed into the inner crucible due to the lack of a spacer between the outer crucible and the inner crucible, which may result in the pulling process of the inner crucible being interrupted or in the quality of the single crystal silicon being produced.

SUMMERY OF THE UTILITY MODEL

Based on this, a single crystal furnace equipped with an isolation device is proposed to solve the above-mentioned problems.

The utility model provides an install isolating device's single crystal growing furnace, single crystal growing furnace includes charge tube, heat shield support ring and concentric outer crucible and the interior crucible that sets up, the heat shield support ring is equipped with first charge aperture, the charge tube passes first charge aperture with the inner chamber intercommunication of outer crucible, single crystal growing furnace still includes:

an isolation device comprising an isolation ring, wherein the inner edge of the isolation ring surrounds the outer wall of the inner crucible, and a region between the outer edge of the isolation ring and the inner edge of the isolation ring isolates the inner cavity of the outer crucible from the inner cavity of the inner crucible so as to block silicon material fed into the outer crucible from the feeding pipe from splashing into the inner crucible cavity;

and the connecting piece is detachably connected with the isolating device and the heat shield support ring.

Above-mentioned install single crystal growing furnace of isolating device, because the outer wall around including the spacer ring inner edge, and the inner chamber of outer crucible and interior crucible is kept apart to the region between the outer fringe of spacer ring and the inward flange of spacer ring, consequently when carrying outer crucible with silicon material through the filling tube, the silicon material that splashes out in the outer crucible can be rebounded to in the outer crucible by the spacer ring.

In one embodiment, the isolating ring is provided with a second feeding hole, the second feeding hole is coaxial with the first feeding hole, the diameter of the second feeding hole is the same as that of the first feeding hole, the feeding pipe passes through the first feeding hole and the second feeding hole, and the bottom surface of the isolating ring is higher than the outlet of the feeding pipe in the height direction of the inner crucible.

In one embodiment, the surface of the heat shield support ring is provided with a plurality of groups of first connection holes, the surface of the isolation ring is provided with a plurality of groups of second connection holes, the plurality of groups of second connection holes correspond to the plurality of groups of first connection holes in position respectively, and the plurality of connecting pieces are connected with the first connection holes and the second connection holes respectively.

In one embodiment, the connector is a threaded rod.

In one embodiment, the isolation device comprises a connecting ring, the inner edge of the connecting ring surrounds the outer wall of the inner crucible, one end of the connecting ring is integrally formed with the isolation ring, and the other end of the connecting ring is connected with the heat shield support ring through the connecting piece.

In one embodiment, an included angle between one surface of the isolating ring facing the connecting ring and the axis of the connecting ring is an obtuse angle a.

In one embodiment, the surface of the heat shield support ring is provided with a plurality of groups of first connecting holes, the end part of the connecting ring is provided with a plurality of groups of second connecting holes, and a plurality of connecting pieces are respectively connected with the first connecting holes and the second connecting holes.

In one embodiment, the connector is a bolt.

In one embodiment, one end of the isolating ring extends along the height direction of the inner crucible and is abutted with the heat shield support ring, the connecting piece is connected with the isolating ring and the heat shield support ring, and the bottom surface of the isolating ring is lower than the outlet of the feeding pipe in the height direction of the inner crucible.

In one embodiment, the isolation device is made of graphite, alumina, zirconia or quartz.

Drawings

FIG. 1 is a perspective sectional view of a single crystal growing furnace according to an embodiment of the present invention;

FIG. 2 is a schematic view of the heat shield support ring and spacer ring of FIG. 1;

FIG. 3 is a perspective sectional view of a single crystal growing furnace according to an embodiment of the present invention;

FIG. 4 is a schematic view of the heat shield support ring and spacer assembly of FIG. 3;

FIG. 5 is a perspective sectional view of a single crystal growing furnace according to an embodiment of the present invention;

fig. 6 is a schematic view of the structure of the heat shield support ring and the spacer ring of fig. 5.

Reference numerals:

100. a feed tube; 200. a heat shield support ring; 210. a first feed aperture; 211. a first connection hole; 300. an outer crucible; 400. an inner crucible; 500. an isolation device; 510. an isolating ring; 511. a second feed aperture; 512. a second connection hole; 520. a connecting ring; 600. a connecting member.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the utility model and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the utility model.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.

In the existing design scheme of continuous feeding without stopping the furnace, a scheme of manufacturing monocrystalline silicon by adopting a plurality of crucibles exists, for example, the monocrystalline silicon is manufactured by respectively melting silicon materials by adopting an outer crucible and an inner crucible, and the sizes of the outer crucible and the inner crucible are different, so that the time for adding the silicon materials in the process of producing the monocrystalline silicon can be different. When it is desired to add silicon to one of the crucibles, this may result in silicon material being splashed from one crucible into the other during the delivery of the silicon material, due to the lack of shielding between the upper ends of the crucibles, for example when the outer crucible is being fed, this may result in silicon material being added to the outer crucible being splashed into the inner crucible due to the lack of an isolation barrier between the outer crucible and the inner crucible, which may result in the pulling process of the inner crucible being interrupted or affect the quality of the single crystal silicon produced. Based on this, a single crystal furnace equipped with an isolation device is proposed to solve the above-mentioned problems.

Referring to fig. 1, 3 and 5, fig. 1, 3 and 5 are sectional views showing three-dimensional structures of a single crystal furnace according to three embodiments of the present invention, the single crystal furnace according to the present invention includes a feeding tube 100, a heat shield support ring 200, and an outer crucible 300 and an inner crucible 400 concentrically arranged, the heat shield support ring 200 is provided with a first feeding hole 210, the feeding tube 100 passes through the first feeding hole 210 and communicates with an inner cavity of the outer crucible 300, and the single crystal furnace further includes: a spacer 500 and a connector 600. Wherein the feeding tube 100 is adapted to facilitate continuous feeding during non-stop operation, and is a two-line tube parallel to the initial feeding tube 100 of the single crystal furnace, i.e., silicon material can be fed into the outer crucible 300 through the feeding tube 100 along the first feeding hole 210 of the heat shield support ring 200 during crystal pulling. It should be noted that the charging tube 100 is in communication with the outer crucible 300, and it is understood that the outlet of the charging tube 100 is located between the inner wall of the outer crucible 300 and the outer wall of the inner crucible 400. The concentric arrangement of the outer crucible 300 and the inner crucible 400 means that the inner crucible 400 is located within the outer crucible 300 with the axes of the cavities of the two coinciding. The insulation 500 is used to form an insulation barrier between the inner cavity of the outer crucible 300 and the inner cavity of the inner crucible 400, and the connection 600 is used to mount and fix the insulation 500.

Specifically, the separating device 500 comprises a separating ring 510, the inner edge of the separating ring 510 surrounds the outer wall of the inner crucible 400, and the region between the outer edge of the separating ring 510 and the inner edge of the separating ring 510 separates the inner cavity of the outer crucible 300 from the inner cavity of the inner crucible 400 to block the silicon material fed into the outer crucible 300 from the feeding tube 100 from splashing into the inner crucible 400. It should be noted that the inner edge of the spacer ring 510 refers to the inner hole edge of the spacer ring 510, and reference may be made herein to a ring structure. The coupling member 600 detachably couples the insulation device 500 and the heat shield support ring 200, and the coupling member 600 is used to fix the insulation device 500.

To further illustrate the principles of the separating apparatus 500 for separating silicon material, when the inner edge of the separating ring 510 surrounds the outer wall of the inner crucible 400, the separating ring 510 can be implemented in two ways to prevent silicon material from splashing from the outer crucible 300 into the inner crucible 400. First, the outside diameter of the spacer ring 510 is slightly smaller than the inside diameter of the outer crucible 300, and the inside diameter of the spacer ring 510 is slightly larger than the outside diameter of the inner crucible 400. When the inner edge of the spacer ring 510 surrounds the inner crucible 400, the inner edge of the spacer ring 510 and the outer edge of the spacer ring 510 have a large difference in diameter, which enables the region between the inner edge of the spacer ring 510 and the outer edge of the spacer ring 510 to shield the silicon material. For example, when silicon material is added to the inner crucible 400 through the first feed tube 100, the side of the spacer ring 510 facing the inner cavity of the outer crucible 300 can spring back the splashed silicon material. Second, the diameter of the outer edge of the separating ring 510 is slightly larger than the diameter of the inner edge of the separating ring 510, and it can be understood that the inner edge of the separating ring 510 covers the inner crucible 400, so that when the silicon material is splashed from the outer crucible 300, the region between the outer edge of the separating ring 510 and the inner edge of the separating ring 510, that is, the sidewall of the separating ring 510 can rebound the silicon material.

In one embodiment, referring to fig. 1 and 2, the isolating ring 510 is provided with a second feeding hole 511, the second feeding hole 511 is coaxial with the first feeding hole 210, the diameter of the second feeding hole 511 is the same as that of the first feeding hole 210, the feeding tube 100 passes through the first feeding hole 210 and the second feeding hole 511, and the bottom surface of the isolating ring 510 is higher than the outlet of the feeding tube 100 in the height direction of the inner crucible 400. In this embodiment, the first solution mentioned above is used, i.e. the diameter of the outer edge of the separating ring 510 is slightly smaller than the inner diameter of the outer crucible 300 and the diameter of the inner edge of the separating ring 510 is slightly larger than the outer diameter of the inner crucible 400. Since the isolating ring 510 faces one surface of the outer crucible 300 and serves to prevent the silicon material from splashing into the inner crucible 400, the isolating ring 510 is provided with a second feeding hole 511 for feeding the silicon material into the outer crucible 300. Wherein the bottom surface of the separating ring 510 is higher than the outlet of the feed tube 100 in the height direction of the inner crucible 400 means that the side of the separating ring 510 facing the bottom of the inner cavity of the outer crucible 300 is further away from the bottom of the inner cavity of the outer crucible 300 than the outlet of the feed tube 100. The advantage of this design is to prevent the silicon material delivered from the feed tube 100 from falling onto the isolation ring 510, resulting in waste of silicon material.

Further, referring to fig. 1, in order to fix the isolating ring 510, in an embodiment, a plurality of sets of first connecting holes 211 are formed in the surface of the heat shield support ring 200, a plurality of sets of second connecting holes 512 are formed in the surface of the isolating ring 510, the plurality of sets of second connecting holes 512 correspond to the plurality of sets of first connecting holes 211, and the plurality of connecting members 600 are connected to the first connecting holes 211 and the second connecting holes 512, respectively. It should be noted that in this embodiment, the isolation ring 510 is suspended on the heat shield support ring 200, and since the heat shield support ring 200 and the inner crucible 400 have a certain distance in the single crystal furnace, when the inner edge of the isolation ring 510 surrounds the outer wall of the inner crucible 400, the isolation ring 510 is also at a certain distance from the heat shield support ring 200. The spacer ring 510 is now suspended and fixed to the heat shield support ring 200 by the connector 600. Wherein the connector 600 may be a screw.

In order to prevent the silicon material from passing along the gap between the outer edge of the separating ring 510 and the inner wall of the outer crucible 300 and into the inner crucible 400, in one embodiment, as shown with reference to fig. 3 and 4, the separating device 500 comprises a connecting ring 520, wherein the inner edge of the connecting ring 520 surrounds the outer wall of the inner crucible 400. The connection ring 520 has one end integrally formed with the spacer ring 510 and the other end connected to the heat shield support ring 200 by a connector 600. That is, compared to the embodiment that the isolating ring 510 is suspended from the heat shield support ring 200 by the connecting member 600, the embodiment closes the space between the side of the isolating ring 510 facing away from the inner cavity of the outer crucible 300 and the heat shield support ring 200 by the connecting ring 520, so that the silicon material is rebounded by the connecting ring 520 even though the silicon material passes through the gap between the outer edge of the isolating ring 510 and the inner wall of the outer crucible 300.

Further, as shown in fig. 3, when the silicon material is rebounded by the connection ring 520, it may fall on the isolation ring 510. For this purpose, in one embodiment, a surface of the spacer ring 510 facing the connecting ring 520 forms an obtuse angle a with the axis of the connecting ring 520. Since the surface of the separating ring 510 facing the connecting ring 520 forms an obtuse angle with the axis of the connecting ring 520, when the silicon material falls onto the separating ring 510, the silicon material can fall from the separating ring 510 into the outer crucible 300.

Further, in order to fix the connection ring 520, in an embodiment, a plurality of sets of first connection holes (not shown) are formed in the surface of the heat shield support ring 200, a plurality of sets of second connection holes (not shown) are formed in the end of the connection ring 520, and the plurality of connection members 600 are respectively connected to the first connection holes 211 and the second connection holes 512. The connector 600 may be optionally bolted in this case, as the collar 520 abuts the heat shield support ring 200.

In one embodiment, referring to FIGS. 5 and 6, one end of the isolating ring 510 extends along the height direction of the inner crucible 400 and abuts against the heat shield support ring 200, the connecting member 600 connects the isolating ring 510 and the heat shield support ring 200, and the bottom surface of the isolating ring 510 is lower than the outlet of the feed pipe 100 in the height direction of the inner crucible 400. In this embodiment, a second design is used, in which the outer edge diameter of spacer ring 510 is slightly larger than the inner edge diameter of spacer ring 510. When one end of the spacer ring 510 extends to the heat shield support ring 200, the inner crucible 400 is now completely covered by the spacer ring 510, so that when the silicon material jumps out of the outer crucible 300, the silicon material bounces back against the outer wall of the spacer ring 510. In addition, the fact that the bottom surface of the separating ring 510 is lower than the outlet of the feed tube 100 in the height direction of the inner crucible 400 means that the surface of the separating ring 510 facing the bottom of the inner cavity of the outer crucible 300 is closer to the bottom of the inner cavity of the outer crucible 300 than the outlet of the feed tube 100. The advantage of this design is that the silicon material is prevented from entering the inner crucible 400 along the gap between the outer wall of the inner crucible 400 and the inner wall of the outer crucible 300.

In one embodiment, the material of the isolation device 500 is graphite, alumina, zirconia, or quartz. Considering that the isolation device 500 needs to have high temperature resistance, the isolation device 500 needs to be made of high temperature resistant material.

The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above examples only show some embodiments of the present invention, and the description thereof is more specific and detailed, but not to be construed as limiting the scope of the utility model. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. The utility model provides an install isolating device's single crystal growing furnace, single crystal growing furnace includes charge tube, heat shield support ring and the outer crucible and the interior crucible that set up with one heart, the heat shield support ring is equipped with first charge aperture, the charge tube passes first charge aperture with the inner chamber intercommunication of outer crucible, a serial communication port, single crystal growing furnace still includes:

an isolation device comprising an isolation ring, wherein the inner edge of the isolation ring surrounds the outer wall of the inner crucible, and a region between the outer edge of the isolation ring and the inner edge of the isolation ring isolates the inner cavity of the outer crucible from the inner cavity of the inner crucible so as to block silicon material fed into the outer crucible from the feeding pipe from splashing into the inner crucible cavity;

and the connecting piece is detachably connected with the isolating device and the heat shield support ring.

2. The single crystal furnace of claim 1, wherein the isolating ring is provided with a second feeding hole, the second feeding hole is coaxial with the first feeding hole, the diameter of the second feeding hole is the same as that of the first feeding hole, the feeding tube passes through the first feeding hole and the second feeding hole, and the bottom surface of the isolating ring is higher than the outlet of the feeding tube in the height direction of the inner crucible.

3. The single crystal furnace of claim 2, wherein the surface of the heat shield support ring is provided with a plurality of sets of first connection holes, the surface of the isolation ring is provided with a plurality of sets of second connection holes, the plurality of sets of second connection holes correspond to the plurality of sets of first connection holes respectively, and the plurality of connection pieces are connected with the first connection holes and the second connection holes respectively.

4. The single crystal furnace of claim 3, wherein the connector is a screw.

5. The single crystal furnace of claim 2, wherein the isolation device comprises a connecting ring having an inner edge surrounding the outer wall of the inner crucible, the connecting ring being integrally formed with the isolation ring at one end and connected to the heat shield support ring at the other end by the connector.

6. The single crystal furnace of claim 5, wherein a face of the isolating ring facing the connecting ring forms an obtuse angle a with an axis of the connecting ring.

7. The single crystal furnace of claim 5, wherein the surface of the heat shield support ring is provided with a plurality of sets of first connection holes, the end of the connection ring is provided with a plurality of sets of second connection holes, and a plurality of the connection members are respectively connected with the first connection holes and the second connection holes.

8. The single crystal furnace of claim 7, wherein the connectors are bolts.

9. The single crystal furnace of claim 1, wherein one end of the isolating ring extends along the height direction of the inner crucible and abuts against the heat shield support ring, the connecting piece connects the isolating ring and the heat shield support ring, and the bottom surface of the isolating ring is lower than the outlet of the charging pipe in the height direction of the inner crucible.

10. The single crystal furnace of claim 1, wherein the isolation device is made of graphite, alumina, zirconia or quartz.

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