CN215163311U - 一种单晶加料装置 - Google Patents
一种单晶加料装置 Download PDFInfo
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- CN215163311U CN215163311U CN202120362748.1U CN202120362748U CN215163311U CN 215163311 U CN215163311 U CN 215163311U CN 202120362748 U CN202120362748 U CN 202120362748U CN 215163311 U CN215163311 U CN 215163311U
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- 239000013078 crystal Substances 0.000 title claims abstract description 35
- 239000010453 quartz Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000007599 discharging Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN202120362748.1U CN215163311U (zh) | 2021-02-07 | 2021-02-07 | 一种单晶加料装置 |
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CN202120362748.1U CN215163311U (zh) | 2021-02-07 | 2021-02-07 | 一种单晶加料装置 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114381797A (zh) * | 2021-12-29 | 2022-04-22 | 宁夏申和新材料科技有限公司 | 伸缩式石英加料装置、直拉单晶炉及提高拉速的方法 |
CN114411241A (zh) * | 2022-03-11 | 2022-04-29 | 浙江精功科技股份有限公司 | 一种单晶炉加料装置 |
CN115026265A (zh) * | 2022-08-09 | 2022-09-09 | 沈阳真空技术研究所有限公司 | 一种离子束冷床与感应冷坩埚复合熔炼铸造装置 |
WO2023185036A1 (zh) * | 2022-03-31 | 2023-10-05 | Tcl中环新能源科技股份有限公司 | 原料复投装置及包括其的单晶制造装置 |
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2021
- 2021-02-07 CN CN202120362748.1U patent/CN215163311U/zh active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114381797A (zh) * | 2021-12-29 | 2022-04-22 | 宁夏申和新材料科技有限公司 | 伸缩式石英加料装置、直拉单晶炉及提高拉速的方法 |
CN114411241A (zh) * | 2022-03-11 | 2022-04-29 | 浙江精功科技股份有限公司 | 一种单晶炉加料装置 |
CN114411241B (zh) * | 2022-03-11 | 2023-12-22 | 浙江精工集成科技股份有限公司 | 一种单晶炉加料装置 |
WO2023185036A1 (zh) * | 2022-03-31 | 2023-10-05 | Tcl中环新能源科技股份有限公司 | 原料复投装置及包括其的单晶制造装置 |
CN115026265A (zh) * | 2022-08-09 | 2022-09-09 | 沈阳真空技术研究所有限公司 | 一种离子束冷床与感应冷坩埚复合熔炼铸造装置 |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: 675099 east side of South Gate of chufengyuan, sunshine Avenue, Lucheng Town, Chuxiong City, Chuxiong Yi Autonomous Prefecture, Yunnan Province Patentee after: Yunnan Yuze Semiconductor Co.,Ltd. Address before: 675099 east side of South Gate of chufengyuan, sunshine Avenue, Lucheng Town, Chuxiong City, Chuxiong Yi Autonomous Prefecture, Yunnan Province Patentee before: Yuze semiconductor (Yunnan) Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP03 | Change of name, title or address |
Address after: No. 69 Waizhou Road, Yihai Community, Lucheng Town, Chuxiong City, Chuxiong Yi Autonomous Prefecture, Yunnan Province, 675000 Patentee after: Yunnan Yuze New Energy Co.,Ltd. Country or region after: China Address before: 675099 east side of South Gate of chufengyuan, sunshine Avenue, Lucheng Town, Chuxiong City, Chuxiong Yi Autonomous Prefecture, Yunnan Province Patentee before: Yunnan Yuze Semiconductor Co.,Ltd. Country or region before: China |
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