CN215163108U - Gas mixing device of silicon carbide chemical vapor deposition equipment - Google Patents
Gas mixing device of silicon carbide chemical vapor deposition equipment Download PDFInfo
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- CN215163108U CN215163108U CN202121551692.0U CN202121551692U CN215163108U CN 215163108 U CN215163108 U CN 215163108U CN 202121551692 U CN202121551692 U CN 202121551692U CN 215163108 U CN215163108 U CN 215163108U
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Abstract
The utility model discloses a carborundum chemical vapor deposition equipment gas mixing arrangement, including the mixing tube way that admits air, gas mixing cavity and the mixing tube way of giving vent to anger, the air inlet of gas mixing cavity is connected to the one end of the mixing tube way that admits air, and the gas outlet of gas mixing cavity is connected to the one end of the mixing tube way of giving vent to anger, and the interval is equipped with the multi-disc spoiler in the passageway of the mixing tube way that admits air. The utility model can improve the uniformity of the raw material gas mixture and ensure the uniformity of the deposition layer in the wafer; the gas mixing efficiency is effectively ensured, the stability of the process is improved, and the yield and the quality of SiC epitaxial wafer products are effectively improved.
Description
Technical Field
The utility model relates to a carborundum chemical vapor deposition technical field, in particular to carborundum chemical vapor deposition equipment gas mixing arrangement.
Background
Silicon carbide (SiC) is one of the representatives of wide bandgap semiconductor materials, has the advantages of large bandgap width, high breakdown electric field, large thermal conductivity, high electron saturation drift velocity, strong radiation resistance and the like, and is a key material of a new generation of power electronic devices and circuits. SiC epitaxial wafer fabrication is an indispensable part of the process from single crystal material to device fabrication. At present, SiC epitaxial wafers are mainly obtained by chemical vapor deposition methods.
SiC chemical vapor deposition equipment (SiC-CVD for short) is characterized in that raw material gas (silane + propane or trichlorosilane + ethylene) is introduced into a reaction chamber through a CVD gas inlet device, and reaction conditions such as pressure, temperature and the like of the reaction chamber are controlled, so that the reaction gas reacts, and a deposition layer, namely an epitaxial layer, is formed on the surface of a SiC substrate. Among the parameters characterizing the quality of the epitaxial layer, the uniformity of the deposited layer is one of the basic parameters, and the uniformity of the raw material gas mixture is an important parameter influencing the deposited layer; meanwhile, the degree of mixing of the raw material gas also affects the reaction effect of the raw material gas in the reaction chamber, and the quality of the epitaxial layer is affected. The existing SiC chemical vapor deposition equipment generally has various raw material gases directly merged into a pipeline and then enters a reaction chamber through a porous diffusion device, and the design has the possibility of uneven raw material mixing, particularly on the design that the flow rate of the raw material gases is small or the mixing pipeline is short.
SUMMERY OF THE UTILITY MODEL
The utility model aims at the above-mentioned defect of prior art, provide a carborundum chemical vapor deposition equipment gas mixing device. Through the utility model discloses improve the mixing uniformity of gaseous raw and other materials, improve the homogeneity of SiC epitaxial layer, promote SiC epitaxial wafer quality.
For solving the above-mentioned defect of prior art, the utility model provides a technical scheme is: the gas mixing device of the silicon carbide chemical vapor deposition equipment comprises a gas inlet mixing pipeline, a gas mixing cavity and a gas outlet mixing pipeline, wherein one end of the gas inlet mixing pipeline is connected with a gas inlet of the gas mixing cavity, one end of the gas outlet mixing pipeline is connected with a gas outlet of the gas mixing cavity, and a plurality of spoilers are arranged in a channel of the gas inlet mixing pipeline at intervals.
As an improvement of the gas mixing device of the silicon carbide chemical vapor deposition equipment, every piece of the turbulence plate is provided with a through hole and every piece of the turbulence plate, and the through hole on the turbulence plate is arranged in a staggered way. The optimal number of the spoilers in the air inlet mixing pipeline is 8-10.
As the utility model discloses carborundum chemical vapor deposition equipment gas mixing device's an improvement, every the equal interval in edge of spoiler is equipped with a plurality of breachs, every the breach dislocation set of spoiler, the projection of breach on the spoiler in the gas flow side is not coincident.
As an improvement of the gas mixing device of the silicon carbide chemical vapor deposition equipment, the utility model is a plurality of the spoiler parallel fixation is in the air intake mixing pipeline, a plurality of the spoiler is followed the radial evenly distributed of the air intake mixing pipeline. The interval between two adjacent spoilers is 5 ~ 10 mm.
As an improvement of the gas mixing device of the silicon carbide chemical vapor deposition equipment, a spiral structure is arranged on the inner side wall of the channel of the gas outlet mixing pipeline.
As an improvement of the gas mixing device of the silicon carbide chemical vapor deposition equipment, the number of the rotation turns of the spiral structure is at least 5 turns. The length of the spiral structure is more than 60mm, and the length of a straight pipeline at the tail end of the air outlet mixing pipeline is more than 50 mm.
As an improvement of the gas mixing device of the silicon carbide chemical vapor deposition equipment, the inner diameter of the gas inlet mixing pipeline is the same as the inner diameter of the gas outlet mixing pipeline.
As an improvement of the utility model, the gas mixing device of the silicon carbide chemical vapor deposition equipment is improved, the gas inlet end and the gas outlet end of the gas mixing cavity are both provided with a cone structure, the gas inlet and the gas outlet are arranged at the bottom of the cone structure, the inner diameter of the gas mixing cavity is larger than the gas inlet mixing pipeline and the inner diameter of the gas outlet mixing pipeline. The optimal inner diameter of the gas mixing cavity is 40mm, the length of the gas mixing cavity is 20-200 mm, and the optimal length is 60 mm. The internal diameter of the air inlet mixing pipeline is 5-20 mm, the optimal internal diameter is 10mm, the internal diameter of the air outlet mixing pipeline is 5-20 mm, and the optimal setting is 10 mm.
Compared with the prior art, the utility model has the advantages that: the utility model can improve the uniformity of the raw material gas mixture and ensure the uniformity of the deposition layer in the wafer; the gas mixing efficiency is effectively ensured, the stability of the process is improved, and the yield and the quality of SiC epitaxial wafer products are effectively improved. The spoiler and the spiral structure are matched for use, so that the problem that the air flow flows out from the air inlet to the air outlet of the spiral gas mixing pipe in a centralized manner is solved, the original speed and direction of the air flow are changed by the spoiler, the air is diffused towards the periphery along the conical structure, and meanwhile, due to the limiting effect of the spoiler, the trend of gathering towards the middle is presented, so that the whole reaction device is filled with the air more uniformly; the uniform distribution and flow of the gas in a certain space are realized by controlling the flow.
Drawings
The invention and its advantageous technical effects are described in further detail below with reference to the accompanying drawings and embodiments, in which:
fig. 1 is a schematic perspective view of the present invention.
Fig. 2 is a front view of the present invention.
Fig. 3 is a schematic structural view of a first spoiler of the present invention.
Fig. 4 is a schematic structural view of a second spoiler of the present invention.
Reference symbol names: 1. the gas mixing device comprises a gas inlet mixing pipeline 2, a gas mixing cavity 3, a gas outlet mixing pipeline 4, a spoiler 5, a spiral structure 6, a conical structure 7, a notch 8 and a through hole.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiment of the utility model, all other embodiments that ordinary skilled in the art obtained under the prerequisite of not making creative work all belong to the scope of protection of the utility model.
It should be noted that all the directional indicators (such as upper, lower, left, right, front and rear … …) in the embodiments of the present invention are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit ly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions in the embodiments may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should not be considered to exist, and is not within the protection scope of the present invention.
As shown in fig. 1, fig. 2, fig. 3 and fig. 4, a gas mixing device of a silicon carbide chemical vapor deposition apparatus comprises a gas inlet mixing pipeline 1, a gas mixing cavity 2 and a gas outlet mixing pipeline 3, wherein one end of the gas inlet mixing pipeline 1 is connected with a gas inlet of the gas mixing cavity 2, one end of the gas outlet mixing pipeline 3 is connected with a gas outlet of the gas mixing cavity 2, and a plurality of turbulence plates 4 are arranged in a channel of the gas inlet mixing pipeline 1 at intervals.
Preferably, each spoiler 4 is provided with a through hole 8, and the through holes 8 on each spoiler 4 are arranged in a staggered manner. The number of the optimally arranged spoilers 4 in the air inlet mixing pipeline 1 is 8-10.
Preferably, a plurality of notches 7 are arranged at intervals on the edge of each spoiler 4, the notches 7 of each spoiler 4 are arranged in a staggered manner, and the projections of the notches 7 on the spoilers 4 in the gas flowing direction are not overlapped.
Preferably, a plurality of spoilers 4 are fixed in parallel in the intake mixing pipeline 1, and the plurality of spoilers 4 are uniformly distributed along the radial direction of the intake mixing pipeline 1. The interval between two adjacent spoilers 4 is 5 ~ 10 mm.
Preferably, the inner side wall of the channel of the air outlet mixing pipeline 3 is provided with a spiral structure 5.
Preferably, the helical structure 5 has at least 5 revolutions. The length of the spiral structure 5 is more than 60mm, and the length of the tail end straight pipeline of the air outlet mixing pipeline 3 is more than 50 mm.
Preferably, the inner diameter of the inlet mixing pipe 1 is the same as the inner diameter of the outlet mixing pipe 3. The pipe diameter of the gas mixing cavity 2 is more than 2.5 times larger than that of the gas inlet mixing pipeline 1 and the gas outlet mixing pipeline 3.
Preferably, the gas inlet end and the gas outlet end of the gas mixing cavity 2 are both provided with a conical structure 6, the gas inlet and the gas outlet are arranged at the bottom of the conical structure 6, and the inner diameter of the gas mixing cavity 2 is larger than that of the gas inlet mixing pipeline 1 and that of the gas outlet mixing pipeline 3. The optimal inner diameter of the gas mixing cavity 2 is 40mm, the length of the gas mixing cavity 2 is 20-200 mm, and the optimal length is 60 mm. The internal diameter of the air inlet mixing pipeline 1 is 5-20 mm, the optimal internal diameter is 10mm, the internal diameter of the air outlet mixing pipeline 3 is 5-20 mm, and the optimal setting is 10 mm.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and structures of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. The gas mixing device of the silicon carbide chemical vapor deposition equipment is characterized by comprising a gas inlet mixing pipeline, a gas mixing cavity and a gas outlet mixing pipeline, wherein one end of the gas inlet mixing pipeline is connected with a gas inlet of the gas mixing cavity, one end of the gas outlet mixing pipeline is connected with a gas outlet of the gas mixing cavity, and a plurality of spoilers are arranged in a channel of the gas inlet mixing pipeline at intervals.
2. The gas mixing device as recited in claim 1, wherein each of the spoilers has through holes, and the through holes of each of the spoilers are disposed in a staggered manner.
3. The gas mixing device of the silicon carbide chemical vapor deposition equipment as claimed in claim 1, wherein a plurality of notches are formed at intervals on the edge of each spoiler, the notches of each spoiler are arranged in a staggered mode, and the projections of the notches on the spoilers in the gas flowing direction are not overlapped.
4. The gas mixing device of claim 1, wherein a plurality of the spoilers are fixed in parallel in the gas inlet mixing pipeline, and the plurality of the spoilers are uniformly distributed along the radial direction of the gas inlet mixing pipeline.
5. The gas mixing device of the silicon carbide chemical vapor deposition equipment according to claim 1, wherein a spiral structure is arranged on the inner side wall of the channel of the gas outlet mixing pipeline.
6. The gas mixing device of claim 5, wherein the helical structure has at least 5 revolutions.
7. The gas mixing device of claim 1, wherein the inner diameter of the gas inlet mixing pipeline is the same as the inner diameter of the gas outlet mixing pipeline.
8. The gas mixing device of the silicon carbide chemical vapor deposition equipment according to claim 1, wherein the gas inlet end and the gas outlet end of the gas mixing cavity are both provided with a conical structure, the gas inlet and the gas outlet are arranged at the bottom of the conical structure, and the inner diameter of the gas mixing cavity is larger than the inner diameters of the gas inlet mixing pipeline and the gas outlet mixing pipeline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121551692.0U CN215163108U (en) | 2021-07-09 | 2021-07-09 | Gas mixing device of silicon carbide chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121551692.0U CN215163108U (en) | 2021-07-09 | 2021-07-09 | Gas mixing device of silicon carbide chemical vapor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215163108U true CN215163108U (en) | 2021-12-14 |
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| CN202121551692.0U Active CN215163108U (en) | 2021-07-09 | 2021-07-09 | Gas mixing device of silicon carbide chemical vapor deposition equipment |
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2021
- 2021-07-09 CN CN202121551692.0U patent/CN215163108U/en active Active
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Address after: 523000 second floor office building, No.5, Gongye North 1st Road, Hubei Industrial City, Songshan, Dongguan City, Guangdong Province Patentee after: Guangdong Tianyu Semiconductor Co.,Ltd. Address before: 523000 second floor office building, No.5, Gongye North 1st Road, Hubei Industrial City, Songshan, Dongguan City, Guangdong Province Patentee before: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |