CN215161040U

CN215161040U - Graphene cold wall growth device

Info

Publication number: CN215161040U
Application number: CN202121673706.6U
Authority: CN
Inventors: 张锦; 许世臣; 沈超; 姬楠楠; 陈卓
Original assignee: Peking University; Beijing Graphene Institute BGI
Current assignee: Peking University; Beijing Graphene Institute BGI
Priority date: 2021-07-22
Filing date: 2021-07-22
Publication date: 2021-12-14
Anticipated expiration: 2031-07-22

Abstract

The utility model provides a graphite alkene cold wall growth device relates to graphite alkene technical field. This graphite alkene cold wall growth device includes: the reaction chamber is provided with two through holes; the bracket consists of two side plates and a base, and is placed in the reaction chamber; an upper electrode plate placed on the support; the lower electrode plate is placed on the bracket; the radio frequency coil is connected with the reaction chamber; an eddy current coil connected with the reaction chamber; and the leads of the two poles of the power supply respectively penetrate through the two through holes of the reaction chamber, and the two poles of the power supply are respectively connected with the upper electrode plate and the lower electrode plate. According to the graphene cold wall growth device provided by the disclosure, the vertical graphene completely perpendicular to the substrate can be obtained by introducing the electric field and heating the graphene by eddy current, and the device is simple in structure, high in heating speed, high in heat efficiency and low in cost.

Description

Graphene cold wall growth device

Technical Field

The utility model relates to a graphite alkene technical field particularly, relates to a graphite alkene cold wall growth device.

Background

With the wide application of the graphene film in the fields of electronics, communication, illumination, aviation, national defense, military industry and the like, higher requirements are also put forward on the preparation method of the graphene film.

At present, a Radio Frequency Plasma Chemical Vapor Deposition (RF-PECVD) method is the most commonly used method for preparing the graphene film because the preparation method and the preparation instrument are simple. However, graphene prepared by the RF-PECVD method is not vertical graphene which is strictly perpendicular to a substrate, and the preparation of graphene by the RF-PECVD method generally employs a CVD tube furnace to heat an apparatus, which is low in thermal efficiency and long in time for preparing graphene.

It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present disclosure, and thus may include information that does not constitute prior art known to those of ordinary skill in the art.

SUMMERY OF THE UTILITY MODEL

The purpose of the present disclosure is to overcome the deficiencies of the prior art and provide a graphene cold wall growth device with fast growth speed, high efficiency and simple structure.

Other features and advantages of the disclosure will be apparent from the following detailed description, or may be learned by practice of the disclosure in part.

According to a first aspect of the embodiments of the present disclosure, there is provided a graphene cold wall growth apparatus, including:

the reaction chamber is provided with two through holes;

the bracket consists of two side plates and a base, and is placed in the reaction chamber;

the upper electrode plate is arranged on the bracket;

the lower electrode plate is arranged on the bracket;

the radio frequency coil is connected with the reaction chamber and provides a plasma generation source for the graphene cold wall growth device;

the eddy current coil is connected with the reaction chamber and provides a heating source for the graphene cold wall growth device;

and the leads of the two poles of the power supply respectively penetrate through the two through holes of the reaction chamber, and the two poles of the power supply are respectively connected with the upper electrode plate and the lower electrode plate.

In some embodiments of the present disclosure, based on the foregoing solution, the graphene cold wall growth apparatus further includes:

an eddy current coil power supply connected with the eddy current coil;

and the radio frequency coil power supply matcher is connected with the radio frequency coil.

In some embodiments of the present disclosure, based on the foregoing solution, the reaction chamber includes a gas inlet end and a gas exhaust end, the reaction gas enters the reaction chamber from the gas inlet end, and the two through holes of the reaction chamber are disposed at the gas exhaust end.

In some embodiments of the present disclosure, based on the foregoing solution, the two side plates of the bracket are placed in parallel, and the base is vertically connected to the two side plates.

In some embodiments of the present disclosure, based on the foregoing scheme, the upper electrode plate is vertically placed on two side plates of the bracket, and the upper electrode plate is parallel to the base of the bracket.

In some embodiments of the present disclosure, based on the foregoing scheme, the lower electrode plate is placed on the base of the bracket, and the lower electrode plate is placed in parallel with the upper electrode plate.

In some embodiments of the present disclosure, based on the foregoing scheme, the rf coil is connected to the outer wall of the reaction chamber in a winding manner.

In some embodiments of the present disclosure, the number of the eddy current coils is one or more based on the foregoing scheme.

In some embodiments of the present disclosure, based on the foregoing solution, when the number of the eddy current coils is one, the reaction chamber passes through the inside of the eddy current coil, two parts of the eddy current coil, which are separated by the reaction chamber, correspond to the upper electrode plate and the lower electrode plate, respectively, and the eddy current coil is placed in a vertical direction;

when the number of the eddy current coils is multiple, the eddy current coils are tightly attached to the outer wall of the reaction chamber, the eddy current coils respectively correspond to the upper electrode plate and the lower electrode plate, and a magnetic field generated by the eddy current coils is in a vertical direction.

According to the graphene cold wall growth device, the eddy current coil is arranged in the graphene cold wall growth device to serve as the heating source for graphene preparation, so that the time required by heating and cooling can be shortened, the heating and cooling speed is high, and the heat source thermal efficiency is high.

Meanwhile, the radio frequency coil is introduced into the graphene cold wall growth device, a vertical electric field perpendicular to the substrate can be generated, so that the graphene cold wall growth device can grow graphene strictly growing in the vertical direction, and the vertical growth effect is good.

In addition, the graphene cold wall growth device is simple in structure and convenient to assemble, so that the cost for growing vertical graphene is reduced.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty.

Fig. 1 is a schematic structural diagram of a graphene cold wall growth apparatus in an exemplary embodiment of the present disclosure;

fig. 2 is a scanning electron microscope image of graphene grown by a graphene cold wall growth apparatus under a working condition in an exemplary embodiment of the disclosure;

fig. 3 is a scanning electron microscope image of graphene grown by the graphene cold wall growth apparatus under another working condition in the exemplary embodiment of the disclosure;

fig. 4 is a scanning electron microscope image of graphene grown by the graphene cold wall growth apparatus under another working condition in the exemplary embodiment of the disclosure;

fig. 5 is a scanning electron microscope image of graphene grown by the graphene cold wall growth apparatus under another working condition in the exemplary embodiment of the present disclosure.

1: a reaction chamber;

2: a support;

3: an upper electrode plate;

4: a lower electrode plate;

5: a radio frequency coil;

6: an eddy current coil;

7: a power source.

Detailed Description

Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted. Furthermore, the drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale.

Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.

The terms "a," "an," "the," "said," and "at least one" are used to indicate the presence of one or more elements/components/parts/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.

The embodiment of the present disclosure provides a graphene cold wall growth apparatus, as shown in fig. 1, a schematic structural diagram of a graphene cold wall growth apparatus in an exemplary embodiment of the present disclosure, as shown in fig. 1, the graphene cold wall growth apparatus in the present exemplary embodiment may include: the device comprises a reaction chamber 1, a support 2, an upper electrode plate 3, a lower electrode plate 4, a radio frequency coil 5, an eddy current coil 6, a power supply 7, an eddy current coil power supply and a radio frequency coil matcher.

In some embodiments, Chemical Vapor Deposition (CVD) is a conventional method for growing graphene thin films, but due to the limitations of high growth temperature and slow growth rate, scientists have proposed Plasma Enhanced Chemical Vapor Deposition (PECVD) which uses the introduction of a Plasma generating source to provide additional energy for the decomposition of a carbon source precursor, particularly at relatively low temperatures, and can grow high quality graphene even on non-metallic substrates with lower catalytic capabilities than metallic substrates.

PECVD methods are commonly used to grow vertical graphene, including Microwave-Plasma Enhanced Chemical Vapor Deposition (MW-PECVD), Radio Frequency Plasma Chemical Vapor Deposition (RF-PECVD), and Direct Current Plasma Chemical Vapor Deposition (DC-PECVD). Among them, the RF-PECVD method is the most commonly used method for preparing the graphene thin film because the preparation method and the preparation apparatus are simple. However, none of the graphene prepared using the RF-PECVD method is vertical graphene that is strictly perpendicular to the substrate.

In addition, in some embodiments, the conventional hot-wall chemical vapor deposition method is indispensable for the use of the CVD tube furnace due to the high temperature required in the graphene growth process, but the temperature raising and lowering procedures of the furnace body are complicated and often require long heating and cooling time, so that the graphene preparation process becomes complicated and the preparation time is long. Like this, just need one kind and both can make the process of heating and cooling simple, can prepare out the graphite alkene of vertical growth in the stricter meaning simultaneously again, the graphite alkene cold wall growth device that this disclosure provided can satisfy above-mentioned demand.

The reaction chamber 1 is used for placing the substrate reactant provided by the present disclosure, and the reaction gas is also introduced into the cavity of the reaction chamber 1 for reaction.

The substrate reactant is referred to as a substrate, which is a material used for growing graphene.

The reaction gas is also called a carbon source, and the carbon source is used for providing gas for growing the graphene.

The reaction chamber 1 comprises an air inlet end and an air exhaust end, reaction gas enters the reaction chamber 1 from the air inlet end, the air exhaust end is provided with a plurality of through holes, leads of two poles of the power supply 7 respectively penetrate through the two through holes of the air exhaust end, and the reaction chamber 1 is used for carrying out vapor deposition reaction.

In the embodiment of the present disclosure, the substrate may be a silicon wafer, a copper foil, quartz, glass, or a sapphire substrate, but the present disclosure is not limited thereto, and may be any material that can resist high temperature growth of graphene.

In the disclosed embodiments, the carbon source may be one or more of liquid methanol, ethanol, and gaseous methane, preferably, methanol. The selection of the carbon source has certain influence on the grown vertical graphene, and when the vertical graphene is grown by using methanol, the grown graphene array has better morphological characteristics and is more suitable for growing the vertical graphene. But the present disclosure is not limited to the above carbon source.

Fig. 1 is a partial schematic view of a reaction chamber 1, and in some specific embodiments, the reaction chamber 1 is a closed chamber, and before graphene growth is performed, the pressure of the reaction chamber 1 is reduced, generally, the pressure does not exceed 10 Pa. However, the specific pressure value is determined according to the requirements of the graphene cold wall growth device, and the value range herein is only an illustration of the present embodiment, and the present disclosure is not limited thereto.

The graphene cold wall growth device provided by the disclosure comprises a reaction chamber, wherein a substrate is placed in the reaction chamber, and a carbon source is introduced into the reaction chamber, so that the reaction chamber provides a growth place and a material for the growth of graphene, and the growth of vertical graphene can be smoothly carried out.

Wherein a support 2 is placed in said reaction chamber 1 for supporting and fixing the relevant components in the growth device and the desired reaction materials.

The upper electrode plate 3 and the lower electrode plate 4 are used for providing an electric field for the graphene reaction device.

The power supply 7 is used to supply power to the upper electrode plate 3 and the lower electrode plate 4.

The support 2 consists of two side plates and a base, and the support 2 is placed in the reaction chamber 1. The support 2 is used for supporting an upper electrode plate 2, a lower electrode plate 4 and a reaction substrate of the graphene growth device.

The upper electrode plate 3 and the lower electrode plate 4 are both arranged on the bracket 2, the upper electrode plate 3 and the lower electrode plate 4 are respectively connected with a power supply 7, and the power supply 7 provides voltage required by forming an electric field for the upper electrode plate 3 and the lower electrode plate 4.

In some embodiments, both side plates and a base of the bracket 2 can be made of planar metal plates, and the bracket 2 is used for supporting the upper electrode plate 3 and the lower electrode plate 4, so that the shape of the bracket 2 should be an outline with a supporting function, and a rectangular or square plate structure is usually adopted. As for the specific materials adopted by the side plates and the base of the bracket 2, the materials can be metal or plastic according to the growth requirement of graphene, and the disclosure is not limited specifically.

The upper electrode plate 3 and the lower electrode plate 4 need to provide an electric field for the graphene cold wall growth device, and therefore, the upper electrode plate 3 and the lower electrode plate 4 are made of a material with a conductive property, and the selection of a specific material needs to be determined according to the growth requirement of vertical graphene, which is not specifically limited in the disclosure.

The utility model provides a graphite alkene cold wall growth device, through be provided with upper electrode plate and lower electrode plate on the support, can place the base on the support simultaneously, electrode plate and lower electrode plate on the support can effectual support, and simultaneously, upper electrode plate and lower electrode plate provide the electric field for graphite alkene grows, but rapid heating base, the increasing of heat efficiency.

The radio frequency coil is used for providing a plasma generation source for the graphene cold wall growth device.

The radio frequency coil matcher is connected with the radio frequency coil, and high-frequency electromagnetic waves generated by the radio frequency coil can be suitable for the graphene cold wall growth device to grow vertical graphene.

The radio frequency coil 5 is connected with the reaction chamber 1, and the radio frequency coil 5 is connected with the reaction chamber 1 in a winding mode. The radio frequency coil 5 is connected with the radio frequency coil matcher, and the radio frequency coil 5 generates high-frequency electromagnetic waves in the reaction chamber 1 to be used as a plasma generating source.

In some specific embodiments, the power of the rf coil 5 is adjustable, generally, the power of the rf coil 5 is 100W-500W, and the power of the rf coil 5 is in this range, so that the growth of the vertical graphene in a strict sense can be achieved.

According to the graphene cold wall growth device, the radio frequency coil is connected with the radio frequency coil matcher, a required plasma generation source can be provided for the graphene cold wall growth device, and graphene can grow in the vertical direction strictly.

In which the eddy current coil 6 is used for heat treatment of the substrate.

The eddy current coil power supply is used for being connected with the eddy current coil and providing a heat source for the eddy current coil.

The eddy current coil 6 is connected with an eddy current coil power supply which is used as power supply for a heating system of the graphene cold wall growth device.

The eddy current coil 6 is vertically placed up and down outside the reaction chamber 1, corresponding to the upper side of the upper electrode plate 3 and the lower side of the lower electrode plate 4, and the eddy current coil 6 is used for heating the growth device.

In some specific embodiments, the number of eddy current coils 6 may be one or more.

When the number of the eddy current coil 6 is one, the reaction chamber 1 passes through the inside of the eddy current coil 6, two parts of the eddy current coil 6 divided by the reaction chamber 1 respectively correspond to the upper side of the upper electrode plate 3 and the lower side of the lower electrode plate 4, and the eddy current coil 6 is vertically placed.

When the number of the eddy current coils 6 is multiple, the eddy current coils 6 are tightly attached to the outer wall of the reaction chamber 1, the eddy current coils 6 respectively correspond to the upper side of the upper electrode plate 3 and the lower side of the lower electrode plate 4, and the magnetic field generated by the eddy current coils 6 is in the vertical direction.

It is preferable in the present disclosure that the number of the eddy current coils 6 is one, but the number of the eddy current coils 6 may be selected according to specific circumstances, and the present disclosure is not limited thereto.

In some embodiments, to avoid the interference between the rf coil 5 and the eddy current coil 6 in the growth apparatus, the distance between the rf coil 5 and the eddy current coil 6 in the reaction chamber 1 is typically set to 30cm, but the distance is only one of the embodiments of the present disclosure and is not limited herein.

Further, the size of the coil of the eddy current coil 6, the coil pitch and the number of turns of the coil can be adjusted, the power of the eddy current coil 6 can be adjusted, in some specific embodiments, the power of the eddy current coil 6 is 100W to 1000W, and when the power of the eddy current coil 6 is within the above range, the thermal efficiency of the eddy current coil 6 for heating the substrate is high, but the specific power of the eddy current coil 6 may be determined according to the growth requirement of graphene, and the disclosure is not limited specifically.

This is disclosed through being connected eddy current coil and eddy current coil power for the eddy current coil power can provide electric power for the eddy current coil, through eddy current coil heating substrate, can improve the thermal efficiency that the substrate heated.

The embodiment of the disclosure provides a graphene cold wall growth device, a substrate is provided for the growth device, after the substrate is placed, a power supply 7 is switched on, an electric field in the vertical direction is formed between an upper electrode plate 3 and a lower electrode plate 4, then, a low voltage is pumped out of a reaction chamber 1, a power supply of a vortex coil is switched on, a vortex coil 6 is subjected to vortex heating, then, a plasma source is switched on by using a radio frequency coil 5, reaction gas, namely a carbon source enters the reaction chamber 1 through a gas inlet end of the reaction chamber 1, and vapor deposition reaction is carried out on the surface of the substrate to grow vertical graphene.

This is disclosed through be provided with up electrode plate and lower electrode plate in graphite alkene cold wall growth device, go up electrode plate and lower electrode plate and connect respectively on the power, can introduce vertical direction electric field like this in this growth device, make graphite alkene can grow according to the electric field direction strictly at the in-process of growing, form graphite alkene on the vertical direction, set up radio frequency coil and eddy current coil simultaneously in this growth device, radio frequency coil provides plasma source, eddy current coil heats the base, make this graphite alkene cold wall growth device make vertical graphite alkene grow with low costs, high efficiency and device simple structure.

In some embodiments, the support 2 comprises two side plates and a base, the two side plates being disposed opposite to each other, and the two side plates being disposed perpendicular to the base.

Wherein, the bracket 2 is used for supporting an upper electrode plate and a lower electrode plate, and the bracket 2 is also used for placing a substrate.

The upper electrode plate 3 is vertically arranged on two side plates of the bracket 2, and the upper electrode plate 3 is parallel to the base of the bracket 2.

The lower electrode plate 4 is placed on the base of the bracket 2, and the lower electrode plate 4 is placed in parallel with the upper electrode plate 3.

The upper electrode plate 3 and the lower electrode plate 4 are respectively connected with a lead, and the upper electrode plate 3 and the lower electrode plate 4 are respectively connected with a power supply 7. The distance between the upper electrode plate 3 and the lower electrode plate 4 can be adjusted, that is, the electric field intensity formed between the upper electrode plate 3 and the lower electrode plate 4 can be adjusted.

In some specific embodiments, the electric field strength between the upper electrode plate 3 and the lower electrode plate 4 does not exceed 150V/cm. However, with the increase of the electric field intensity, the vertical growth of the graphene under the induction of the electric field effect can be more favorably carried out, but the high electric field intensity can interfere with the vapor deposition equipment. In the electric field intensity range, the growth of a better vertical graphene array can be realized, and the operation of vapor deposition equipment can not be interfered.

Further, the upper electrode plate 3 is connected to the positive electrode of the power source 7, and the lower electrode plates 4 are connected to the negative electrodes of the power source 7, so that an electric field in the vertical direction is formed between the upper electrode plate 3 and the lower electrode plates 4. However, the connection manner of the positive electrode and the negative electrode is only limited in this embodiment, and the disclosure is not limited thereto.

In some embodiments, the substrate is located between the upper electrode plate 3 and the lower electrode plate 4, and optionally, the substrate may be directly placed on the upper surface of the lower electrode plate 4. The placement of the substrate may be determined according to particular needs and the disclosure is not further limited.

The utility model provides a graphite alkene cold wall growing device forms the electric field of vertical direction in growing device through adding upper and lower plate electrode in graphite alkene cold wall growing device, can make graphite alkene grow according to the vertical direction of electric field strictly, and the device simple structure is with low costs.

Fig. 2 to 5 are scanning electron microscope images of graphene grown by the graphene cold wall growth apparatus under different working conditions in the exemplary embodiment of the present disclosure, as shown in the drawings. Fig. 2 and 3 are scanning electron microscope images of the vertical graphene array observed from a top view angle at the upper left corner, and fig. 2 to 5 are scanning electron microscope images of the vertical graphene array grown on the substrate observed from a side surface.

Wherein, the working conditions of fig. 2 are: the power of the radio frequency coil is set to be 250W, the power of the eddy current coil is set to be 600W, the power supply is set to be 100V, the distance between the upper electrode plate and the lower electrode plate is 1.5cm, 20sccm of methanol carbon source is added, and the growth is carried out for 0.5 h.

The operating conditions of FIG. 3 are: the power of the radio frequency coil is set to 250W, the power of the eddy current coil is set to 700W, the power supply is set to 100V, the distance between the upper electrode plate and the lower electrode plate is 1.5cm, 20sccm methanol carbon source is added, and the growth is carried out for 0.5 h.

The operating conditions of FIG. 4 are: the power of the radio frequency coil is set to be 250W, the power of the eddy current coil is set to be 600W, the power supply is set to be 150V, the distance between the upper electrode plate and the lower electrode plate is 1.5cm, 20sccm of methanol carbon source is added, and the growth is carried out for 0.5 h.

The operating conditions of FIG. 5 are: the power of the radio frequency coil is set to 250W, the power of the eddy current coil is set to 600W, the power supply is set to 100V, the distance between the upper electrode plate and the lower electrode plate is 1.5cm, 20sccm methanol carbon source is added, and the growth lasts for 1 h.

The working condition variables of the graphene cold wall growth device in the embodiment shown in the disclosure are as follows: the power of the radio frequency coil, the power of the eddy current coil, the power supply voltage, the distance between the upper electrode plate and the lower electrode plate, the quantity of carbon sources and the growth time. As can be seen from the scanning electron microscope images for graphene growth in fig. 2 to 5, under the condition that any one of the variables is changed and other variables are not changed, the vertical graphene array in the strict sense can be grown on the substrate by the graphene cold wall growth device provided by the present disclosure. Under different working conditions, the quantity and quality of the grown graphene are different, but the graphene is vertical graphene which is strictly vertical to the substrate.

On the cold wall growing device of graphite alkene that this disclosure provided, through the operating mode variable that changes the cold wall growing device of graphite alkene, all can obtain the graphite alkene of the perpendicular to basement in the strictest, the device that this disclosure provided is simple convenient and high-efficient more, simultaneously, this disclosure adopts eddy current coil to replace traditional CVD tube furnace to heat the cold wall growing device of graphite alkene, can realize the cold wall growth of graphite alkene to the mode that adopts eddy current coil heating makes graphite alkene preparation process simple, and the thermal efficiency is high.

Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.

Claims

1. A graphene cold wall growth device, comprising:

the reaction chamber is provided with two through holes;

the upper electrode plate is arranged on the bracket;

the lower electrode plate is arranged on the bracket;

2. The graphene cold wall growth device according to claim 1, further comprising:

an eddy current coil power supply connected with the eddy current coil;

3. The graphene cold wall growth apparatus according to claim 1,

the reaction chamber comprises an air inlet end and an air exhaust end, reaction gas enters the reaction chamber from the air inlet end, and the two through holes of the reaction chamber are formed in the air exhaust end.

4. The graphene cold wall growth apparatus according to claim 1,

the two side plates of the bracket are arranged in parallel relatively, and the base is vertically connected with the two side plates.

5. The graphene cold wall growth apparatus according to claim 1,

the upper electrode plate is vertically arranged on two side plates of the bracket, and the upper electrode plate is parallel to the base of the bracket.

6. The graphene cold wall growth apparatus according to claim 1,

the lower electrode plate is placed on the base of the support, and the lower electrode plate and the upper electrode plate are placed in parallel.

7. The graphene cold wall growth apparatus according to claim 1,

the lower electrode plate is connected with the positive pole of the power supply, and the upper electrode plate is connected with the negative pole of the power supply.

8. The graphene cold wall growth apparatus according to claim 1,

the radio frequency coil is connected to the outer wall of the reaction chamber in a winding mode.

9. The graphene cold wall growth apparatus according to claim 1,

the number of the eddy current coil is one or more.

10. The graphene cold wall growth apparatus according to claim 1,

when the number of the eddy current coils is one, the reaction chamber penetrates through the inside of the eddy current coils, two parts of the eddy current coils, which are separated by the reaction chamber, correspond to the upper electrode plate and the lower electrode plate respectively, and the eddy current coils are placed in the vertical direction;