CN215067593U - Silicon-based electro-optical modulator irrelevant to polarization - Google Patents
Silicon-based electro-optical modulator irrelevant to polarization Download PDFInfo
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- CN215067593U CN215067593U CN202121096306.3U CN202121096306U CN215067593U CN 215067593 U CN215067593 U CN 215067593U CN 202121096306 U CN202121096306 U CN 202121096306U CN 215067593 U CN215067593 U CN 215067593U
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- 230000010287 polarization Effects 0.000 title claims abstract description 71
- 229910052710 silicon Inorganic materials 0.000 title claims description 26
- 239000010703 silicon Substances 0.000 title claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 25
- 230000003287 optical effect Effects 0.000 claims abstract description 62
- 230000005540 biological transmission Effects 0.000 claims abstract description 20
- 230000010363 phase shift Effects 0.000 claims abstract description 9
- 239000013307 optical fiber Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 19
- 239000000377 silicon dioxide Substances 0.000 abstract description 10
- 230000008033 biological extinction Effects 0.000 abstract description 8
- 238000004891 communication Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 238000004088 simulation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000255 optical extinction spectrum Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The utility model relates to a silica-based electro-optic modulator irrelevant with polarization belongs to the integrated technical field of the silica-based optoelectronic communication device of semiconductor. The utility model comprises a rotary polarization beam splitter, an optical transmission waveguide in MZI structure connected with the rotary polarization beam splitter, a phase shift arm for optical signal adjustment arranged in the MZI structure, and a phase shift arm connected with the optical transmission waveguide; the light at the tail end of the optical transmission waveguide is combined by the MMI beam combiner with the adjustable optical power division ratio, and the optical output channel outputs a modulated optical signal. The utility model discloses a rotatory polarization beam splitter and light merit divide than adjustable MMI structure, can the current modulator polarization sensitivity of effectual solution and the problem that extinction ratio is low.
Description
Technical Field
The utility model relates to a silica-based electro-optic modulator irrelevant with polarization belongs to the integrated technical field of the silica-based optoelectronic communication device of semiconductor.
Background
Silicon photonics devices have broad promise in optical applications due to their low cost, high performance and Complementary Metal Oxide Semiconductor (CMOS) technology with the current state of the art. The silicon optical modulator is a key component of data communication related application and has great significance. In the last decade, advances have been made in the field of silicon photonic modulators. Among all types of silicon optical modulators, modulators based on silicon carrier loss have proven to be the most popular optical modulation solution silicon due to its high performance, e.g., high speed and low power consumption. Have received a great deal of attention for optical fiber long distance communications. In a modulator, phase modulation or amplitude modulation is generally used, wherein the phase modulation changes the refractive index of a material mainly by changing the carrier concentration, and thus changes the propagation constant of light in a waveguide. Amplitude modulation mainly utilizes a physical means to change the absorption coefficient of a material and thus change the intensity of the outgoing light. At present, the most common mode is to combine the two, and on the basis of phase modulation, phase change is converted into amplitude change through a Mach-Zehnder or micro-ring structure, and the mode can be directly detected through a detector more easily.
However, in the case of a silicon-based modulator having a mach-zehnder structure, when the carrier concentration in the material changes, the absorption coefficient of the material may change. Therefore, the extinction ratio of the traditional silicon-based electro-optic modulator with the MZI structure is different from that of the modulator made of the three-five family materials. Meanwhile, most of the existing silicon photonic devices have obvious dependence on polarization, which results in that the traditional MZI modulator needs to be externally connected with a polarization controller to pre-adjust the polarization output of the device before testing, thereby improving the testing difficulty and time cost, and causing the device to generate a plurality of limitations and difficulties in practical application. Therefore, how to realize a polarization-independent modulation device is also an important subject, while a rotating polarization beam splitter is a key device which can convert a TM polarization light source into a TE polarization state while splitting light of two polarization states into different silicon waveguide channels, and an MMI structure with an adjustable optical power ratio can effectively solve the problem of different light intensities of two arms of the modulator caused by different polarization state ratios of the light sources.
Therefore, in view of the problems of the silicon photonic modulator, the present invention provides a structure of a silicon-based electro-optic modulator independent of polarization.
Disclosure of Invention
Problem and not enough to above-mentioned prior art existence, the utility model provides a silica-based electro-optic modulator irrelevant with polarization, the utility model discloses a rotatory polarization beam splitter and light merit divide than adjustable MMI structure, can effectual solution present modulator polarization sensitivity and the problem that extinction ratio is low.
The utility model adopts the technical scheme that: a silicon-based electro-optic modulator irrelevant to polarization comprises a rotary polarization beam splitter 1, an optical transmission waveguide 2 in an MZI structure is connected with the rotary polarization beam splitter 1, a phase-shifting arm 3 for optical signal adjustment is arranged in the MZI structure, and the phase-shifting arm 3 is connected with the optical transmission waveguide 2; the light at the tail end of the optical transmission waveguide 2 is combined by an MMI beam combiner 4 with adjustable optical power division ratio, and an optical output channel 5 outputs a modulation optical signal.
As a further aspect of the present invention, the MMI beam combiner 4 with the adjustable optical power splitting ratio adjusts the splitting ratio by attaching the loading electrode 6.
As a further aspect of the present invention, the MMI combiner 4 with adjustable optical power splitting ratio includes a multimode interference waveguide 7 and an attached electrode 6 on the top of the multimode interference waveguide 7.
As a further aspect of the present invention, the multimode interference waveguide 7 has a rectangular structure, and the input and output waveguides vary in width along the optical field.
As a further aspect of the present invention, the cross section of the optical transmission waveguide 2 is a bar-shaped or ridge-shaped structure, so that the optical signal can be transmitted in a single mode in the device.
As a further proposal of the utility model, the cross section of the phase shift arm 3 structure is in a positive PIN type or reverse PN type doping form.
As a further aspect of the present invention, the rotating polarization beam splitter 1 is composed of two waveguides whose width changes along with the propagation direction of the light field.
As a further aspect of the present invention, the rotating polarization beam splitter 1 is used to split the input mixed mode light field according to the polarization mode beam, and performs polarization rotation on the TM mode light therein to obtain the TE mode light.
The MMI beam combiner 4 with the adjustable optical power division ratio changes the refractive index of the device through any one of the electro-optic effect, the thermo-optic effect, the acousto-optic effect, the free carrier dispersion effect and the like of the material, so that the output optical signals of the two arms are changed from 50: 50 to 0: 100, the adjustment is performed.
The utility model discloses a pair of rotation polarization beam splitter separates mixed mode light signal and converts to on two modulation arms in the MZI structure, makes two arms when the modulation output light intensity that can be according to polarization mode modulate of MZI, makes the device need not to rely on external polarization controller to use, divides the balance that realizes the light intensity than adjustable MMI structure through the light merit simultaneously, has simplified the operation degree of difficulty when the device tests. The problem that the current MZI optical modulator is sensitive to polarization and low in extinction ratio is effectively solved.
The silicon-based electro-optic modulator irrelevant to polarization also comprises metal electrodes 15 respectively positioned at two sides of the phase-shifting arm, contact holes 16 are formed on the metal electrodes 15, meanwhile, the MMI beam combiner 4 with the adjustable light-to-power ratio comprises a multimode interference waveguide 7 and an attached electrode 6 at the top end of the multimode interference waveguide 7, and the attached electrode 6 is used for adjusting the light-splitting ratio of the device.
Preferably, the cross section of the phase shift arm 3 is positive PIN type, that is, the P-type doped region 9, the N-type doped region 10, the P + -type doped region 11, and the N + -type doped region 12 are distributed on the slab layer. The waveguide is centered on the intrinsic region 8 and is not provided with a doping. The silica cladding layer 13 and buried oxide layer 14 serve to confine the optical signal within the waveguide intrinsic region 8.
And the P + type doped region 11 and the N + type doped region 12 of the phase shift arm 3 are respectively led out with electrode short-circuit metal materials as a cathode and an anode of the device. The material of the metal electrode 15 may be Al, Cu, W, or the like.
The utility model has the advantages that: the utility model provides a silica-based electro-optic modulator irrelevant with polarization adopts the rotatory polarization beam splitter as output port, and the rotatory polarization beam splitter is connected with two silica-based transmission waveguides, and is equipped with the traveling wave electrode on every silica-based transmission waveguide and moves the phase arm and realize light modulation, and two arms are connected than adjustable MMI structure with the light merit branch, realize the light intensity balance of two arms, and the light signal of modulation will be exported through output port. When an optical signal is input into the rotating polarization beam splitter, TM polarized light and TE polarized light are respectively output into different optical channels, and the TM light is converted into a TE light source through the rotator. In the modulation process, when one modulation arm is in a modulation mode, the light intensity of the modulation arm is different from that of the other unmodulated arm, and because of the different ratios of TE light and TM light of the light source and the light intensity difference caused by modulation, in order to keep the light intensity in the two arms consistent, voltage can be applied to the MMI with the adjustable power division ratio, the light intensity of the two modulation arms can be identical by changing the light intensity output power ratio of the two arms, and the extinction ratio of the modulator is improved while the polarization independence of the device is realized.
Drawings
FIG. 1 is a schematic diagram of the basic structure of the modulator of the present invention;
fig. 2 is a top view of the MMI structure with adjustable optical power division ratio of the present invention;
FIG. 3 is a schematic cross-sectional view of a phase shifting arm of the modulator of the present invention;
FIG. 4 is a graph showing the simulation results of the optical transmission spectrum of the device simulation of the rotating polarization beam splitter at 1550;
fig. 5 is a simulation result of the optical transmission spectrum of the device simulation of the modulator at 1550 waveband.
The respective reference numerals in FIGS. 1 to 5: the optical waveguide fiber laser comprises a 1-rotating polarization beam splitter, a 2-optical transmission waveguide, a 3-phase shift arm, a 4-MMI beam combiner with an adjustable optical power division ratio, a 5-optical output channel, a 6-loading electrode, a 7-multimode interference waveguide, an 8-intrinsic region, a 9-P type doped region, a 10-N type doped region, an 11-P + type doped region, a 12-N + type doped region, a 13-silicon dioxide cladding layer, a 14-buried oxide layer, a 15-metal electrode and a 16-contact hole.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific embodiments.
Example 1: as shown in fig. 1-5, a polarization-independent silicon-based electro-optic modulator includes a rotating polarization beam splitter 1, an optical transmission waveguide 2 in an MZI structure connected to the rotating polarization beam splitter 1, a phase shift arm 3 for optical signal adjustment disposed in the MZI structure, the phase shift arm 3 connected to the optical transmission waveguide 2; the light at the tail end of the optical transmission waveguide 2 is combined by an MMI beam combiner 4 with adjustable optical power division ratio, and an optical output channel 5 outputs a modulation optical signal.
As a further aspect of the present invention, the MMI beam combiner 4 with the adjustable optical power splitting ratio adjusts the splitting ratio by attaching the loading electrode 6.
As a further aspect of the present invention, the MMI combiner 4 with adjustable optical power splitting ratio includes a multimode interference waveguide 7 and an attached electrode 6 on the top of the multimode interference waveguide 7.
As a further aspect of the present invention, the multimode interference waveguide 7 has a rectangular structure, and the input and output waveguides vary in width along the optical field.
As a further aspect of the present invention, the cross section of the optical transmission waveguide 2 is a bar-shaped or ridge-shaped structure, so that the optical signal can be transmitted in a single mode in the device.
As a further proposal of the utility model, the cross section of the phase shift arm 3 structure is in a positive PIN type or reverse PN type doping form.
As a further aspect of the present invention, the rotating polarization beam splitter 1 is composed of two waveguides whose width changes along with the propagation direction of the light field.
As a further aspect of the present invention, the rotating polarization beam splitter 1 is used to split the input mixed mode light field according to the polarization mode beam, and performs polarization rotation on the TM mode light therein to obtain the TE mode light.
The MMI beam combiner 4 with the adjustable optical power division ratio comprises a multimode interference waveguide 7 and an attached electrode 6 at the top end of the multimode interference waveguide 7. The cross section of the optical transmission waveguide 2 is a ridge waveguide in which the ridge is 130nm high and the slab layer is 90nm high. Width of ridge waveguide500nm, wherein the phase shifting arm 3 is a PIN structured ridge-type optical waveguide formed by doping. The slab region is a lightly doped region formed by a P-type doped region 9 and an N-type doped region 10, and the waveguide center is an intrinsic region 8. The part connected with the lower flat plate layer and the outer side connected with the flat plate layer is composed of a P + type doping area 11 and an N + type doping area 12, and a metal electrode 15 is deposited above the P + type doping area 11 and the N + type doping area 12 to form ohmic contact. A contact hole 16 is formed above the metal electrode 15 and connected to an external modulation signal. Wherein the implanted ions of the P-type doped region 9 and the P + type doped region 11 are boron particles with a concentration of 4e17cm-3And 1e20cm-3. The implanted ions of the N-type doped region 10 and the N + type doped region 12 are phosphorus particles with the concentration of 4e17cm-3And 1e20cm-3. The metal electrode 15 is made of Al material, and the diameter of the contact hole is 5 microns.
When an optical signal enters the rotating polarization beam splitter 1, TM polarized light and TE polarized light are output into different optical transmission waveguides 2, and the TM light is converted into a TE light source by the rotating polarization beam splitter 1. In the modulation process, when one phase shifting arm 3 is in a modulation mode, the light intensity of the phase shifting arm is different from that of the other unmodulated arm, and because of the different ratios of TE light and TM light of a light source and the light intensity difference caused by modulation, in order to keep the light intensity in the two arms consistent, a voltage can be applied to an attached electrode 6 on an MMI beam combiner 4 with an adjustable power division ratio, the light intensity of the two modulation arms can be the same by changing the light intensity output power division ratio of the two arms, the polarization independence of a device is realized, and the extinction ratio of the modulator is improved.
Fig. 5 is a light transmission spectrum of the device simulation of the rotating polarization beam splitter and the polarization-independent silicon-based electro-optic modulator under 1550 waveband of the present invention. Therefore, the light of the two arms can generate complete interference at the output end by introducing the rotary polarization beam splitter and the MMI beam combiner 4 with adjustable light power division ratio, so that the device is insensitive to polarization, the extinction ratio of the device is improved, the bit error rate of the device is reduced, and the signal transmission efficiency of the modulator is improved.
The utility model discloses a theory of operation is:
when an optical signal enters the rotating polarization beam splitter, TM polarized light and TE polarized light are output into different optical channels, and the TM light is converted into a TE light source by the rotating polarization beam splitter 1. In the modulation process, when one modulation arm is in a modulation mode, the light intensity of the modulation arm is different from that of the other unmodulated arm, and because of the different ratios of TE light and TM light of the light source and the light intensity difference caused by modulation, in order to keep the light intensity in the two arms consistent, a voltage can be applied to the MMI beam combiner 4 with the adjustable power-to-power ratio, the light intensity of the two modulation arms can be identical by changing the power-to-output power-to-power ratio of the two arms, the polarization independence of the device is realized, and the extinction ratio of the modulator is improved.
While the present invention has been particularly shown and described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.
Claims (8)
1. A polarization independent silicon-based electro-optic modulator, comprising: the phase-shifting optical fiber coupler comprises a rotary polarization beam splitter (1), an optical transmission waveguide (2) in an MZI structure is connected with the rotary polarization beam splitter (1), a phase-shifting arm (3) for optical signal adjustment is arranged in the MZI structure, and the phase-shifting arm (3) is connected with the optical transmission waveguide (2); the light at the tail end of the optical transmission waveguide (2) is combined by an MMI beam combiner (4) with adjustable optical power division ratio, and an optical output channel (5) outputs a modulation optical signal.
2. The polarization-independent silicon-based electro-optic modulator of claim 1, wherein: the MMI beam combiner (4) with the adjustable light power splitting ratio adjusts the light splitting ratio through the carried electrode (6).
3. The polarization-independent silicon-based electro-optic modulator of claim 1, wherein: the MMI beam combiner (4) with the adjustable optical power division ratio comprises a multi-mode interference waveguide (7) and an attached electrode (6) at the top end of the multi-mode interference waveguide (7).
4. A polarization-independent silicon-based electro-optic modulator as defined in claim 3, wherein: the multimode interference waveguide (7) is of a rectangular structure, and the input and output waveguides vary in width along the optical field.
5. The polarization-independent silicon-based electro-optic modulator of claim 1, wherein: the cross section of the light transmission waveguide (2) is of a strip-shaped or ridge-shaped structure.
6. The polarization-independent silicon-based electro-optic modulator of claim 1, wherein: the cross section of the phase shift arm (3) structure is in a positive PIN type or reverse PN type doping form.
7. The polarization-independent silicon-based electro-optic modulator of claim 1, wherein: the rotating polarization beam splitter (1) consists of two waveguides whose width varies with the propagation direction of the optical field.
8. The polarization-independent silicon-based electro-optic modulator of claim 1, wherein: the rotating polarization beam splitter (1) is used for splitting an input mixed mode light field according to a polarization mode, and carrying out polarization rotation on TM mode light in the mixed mode light field to obtain TE mode light.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121096306.3U CN215067593U (en) | 2021-05-21 | 2021-05-21 | Silicon-based electro-optical modulator irrelevant to polarization |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121096306.3U CN215067593U (en) | 2021-05-21 | 2021-05-21 | Silicon-based electro-optical modulator irrelevant to polarization |
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| CN215067593U true CN215067593U (en) | 2021-12-07 |
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