CN215010210U - 一种可控硅输出光电耦合器结构 - Google Patents
一种可控硅输出光电耦合器结构 Download PDFInfo
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- CN215010210U CN215010210U CN202120732456.2U CN202120732456U CN215010210U CN 215010210 U CN215010210 U CN 215010210U CN 202120732456 U CN202120732456 U CN 202120732456U CN 215010210 U CN215010210 U CN 215010210U
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 24
- 239000010703 silicon Substances 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 230000005693 optoelectronics Effects 0.000 claims abstract description 15
- 238000007789 sealing Methods 0.000 claims description 27
- 230000003014 reinforcing effect Effects 0.000 claims description 17
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- 239000003292 glue Substances 0.000 claims description 5
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- 230000000694 effects Effects 0.000 abstract description 19
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- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000011900 installation process Methods 0.000 description 2
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- 239000002356 single layer Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 230000008595 infiltration Effects 0.000 description 1
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- 239000012212 insulator Substances 0.000 description 1
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- 150000003376 silicon Chemical class 0.000 description 1
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Effective date of registration: 20240821 Address after: 215000 room 304, building 3, software park, No. 78, Keling Road, high tech Zone, Suzhou, Jiangsu Province Patentee after: Suzhou zhuoyuhui Photoelectric Technology Co.,Ltd. Country or region after: China Address before: 211100 room 8713, building B4, Guangyi science and Technology Park, Jiangjun Avenue, moling street, Jiangning District, Nanjing, Jiangsu Province Patentee before: Nanjing Keyun Photoelectric Technology Co.,Ltd. Country or region before: China |