CN215010049U

CN215010049U - Solar energy prevents flowing backward control circuit

Info

Publication number: CN215010049U
Application number: CN202121001614.3U
Authority: CN
Inventors: 林涌鑫; 周源; 江鸿浩; 冯家伟; 陈凯婕; 马炜仪; 郝云峰; 杨熙泉; 卢吉辰; 陈燕婷
Original assignee: Individual
Current assignee: Individual
Priority date: 2021-05-12
Filing date: 2021-05-12
Publication date: 2021-12-03
Anticipated expiration: 2031-05-12

Abstract

The utility model discloses a solar energy prevents flowing backward control circuit, including N channel field effect transistor, voltage comparison module, boost circuit. The invention adopts a reliable high-voltage power supply to provide working voltage for a system, drives the N-channel field effect transistor with low cost and high performance, realizes the function of dual power supply heat switching, occupies a small area, is convenient for the layout of a PCB, and has the advantages of simple driving, good stability, high efficiency and high economy compared with the prior high-side P-channel ideal diode and high-side N-channel charge pump driving ideal diode.

Description

Solar energy prevents flowing backward control circuit

Technical Field

The utility model relates to a diode circuit technical field especially relates to a solar energy prevents flowing backward control circuit.

Background

The mature integrated ideal diode controller in the market at present mainly comprises Linte LT4320 and an LM5050 of Texas instruments, wherein the LM5050 of Texas instruments adopts a high-side N-channel field effect transistor driven by a built-in charge pump, and the Linte LT4320 adopts a direct-drive high-side p-channel field effect transistor. The advantages and disadvantages of the high-side P channel, simple driving, good stability, disadvantages, low efficiency and low economy are all provided. The high-side N channel has the advantages of high efficiency and high economy, but the charge pump has poor stability, and the ideal diode designed by the inventor has the advantages of the high-side N channel and the charge pump, and has the advantages of simplicity in driving, good stability, high efficiency and high economy.

The invention provides an anti-reverse-flow current MOS tube driving circuit which comprises an N-channel field effect tube, a voltage comparison module (a high-precision operational amplifier) and a boost circuit. The invention has the beneficial effects that: the reliable high-voltage power supply is adopted to provide working voltage for the system, the N-channel field effect transistor with low cost and high performance is driven, the function of dual-power hot switching is realized, the occupied area is small, and the layout of a PCB is convenient.

SUMMERY OF THE UTILITY MODEL

The utility model aims to design a simple drive, good stability, high efficiency and high economy; be applicable to solar energy unmanned aerial vehicle power and prevent the circuit of irritating system of flowing backward.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

a solar anti-reverse-filling control circuit comprises a boost module, a voltage comparison module and a high-side N-channel field effect transistor;

the boost module comprises a diode D1, resistors R1, R3 and R6, capacitors C1, C3 and C4, and a boost chip, wherein the source of the diode D1 is connected with a signal output end, a live wire L1 passes through the middle of the signal output end, a connector between the resistors R1, R3 and the resistor R6 is connected with the ground in parallel, the resistor R6 and the capacitor C1 are connected in series and then grounded, the resistors R1, R3 and the capacitor C1 are connected in series and then grounded, and the boost chip and each unit form a boost end and then grounded;

the boost module is electrically connected with the voltage comparison module, the voltage comparison module comprises a capacitor C2, resistors R5 and R2 and a voltage level chip, the capacitor C2 is connected with the boost module in series and then grounded, the boost module overvoltage level chip is connected with the ground after being connected with the boost module in series, the voltage level chip is connected with a gate loop, and the positive and negative ends of the voltage level chip are respectively connected with the resistor R5 and the resistor R2 in series;

the voltage comparison module is connected with the high-side N-channel field effect transistor in parallel through a resistor R5 and a resistor R2, the high-side N-channel field effect transistor comprises an NMOS transistor, 1 to 8 ports are arranged on the NMOS transistor, 1 to 3 ports are S poles, 4 ports are G poles, 5 to 8 ports are D poles, the S poles and the G over resistor R4 are connected with the input end, and the D poles are connected with the output end.

Compared with the prior art, the utility model discloses possess following advantage:

compared with the traditional high-side P-channel ideal diode and the high-side N-channel charge pump driving ideal diode, the ideal diode designed by the scheme has the advantages of simplicity in driving, good stability, high efficiency and high economy, and the boost circuit which is stable and reliable in use is used for generating voltage for driving the high-side N-channel field effect transistor, so that the defect that the charge pump is unstable is avoided.

Drawings

Fig. 1 is a schematic structural diagram of a solar reverse-irrigation prevention control circuit provided by the present invention;

fig. 2 is a schematic structural diagram of the middle circuit board of the present invention.

In the figure: the device comprises a 1boost module, a 2 voltage comparison module and a 3 high-side N-channel field effect transistor.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.

Referring to fig. 1 and 2, the solar reverse-flow prevention control circuit comprises a boost module 1, a voltage comparison module 2 and a high-side N-channel field effect transistor 3;

the high-side N-channel field effect transistor boost module 1 comprises a diode D1, resistors R1, R3 and R6, capacitors C1, C3 and C4 and a boost chip;

the source of the diode D1 is connected with a signal output end middle live wire L1, a parallel connection port between the resistors R1 and R3 and the resistor R6 is grounded, the resistor R6 and the capacitor C1 are connected in series and then grounded, the resistors R1 and R3 and the capacitor C1 are connected in series and then grounded, and the boosting chip and each unit form a boosting end and then are grounded;

the high-side N-channel field effect transistor boost module 1 is electrically connected with the high-side N-channel field effect transistor voltage comparison module 2, the high-side N-channel field effect transistor voltage comparison module 2 comprises a capacitor C2, resistors R5 and R2 and a voltage level chip, and the capacitor C2 is connected with the high-side N-channel field effect transistor boost module 1 in series and then grounded;

the high-side N-channel field effect transistor boost module 1 is grounded after being connected with an overvoltage chip, the voltage chip is connected with a gate loop, and the positive and negative ends of the voltage chip are respectively connected with a resistor R5 and a resistor R2 in series;

the high-side N-channel field effect transistor voltage comparison module 2 is connected with the high-side N-channel field effect transistor 3 in parallel through a resistor R5 and a resistor R2, the high-side N-channel field effect transistor 3 comprises an NMOS (N-channel metal oxide semiconductor) transistor, 1-8 ports are arranged on the NMOS transistor, the ports 1-3 are S poles, the port 4 is G pole, the ports 5-8 are D poles, the S pole and the G over resistor R4 are connected with an input end, and the D pole is connected with an output end;

the resistances of the resistors R1, R2, R3, R4, R5 and R6 are 270k omega, 1m omega, 10k omega, 1m omega and 2.2k omega respectively;

the capacities of the capacitors C1, C2, C3 and C4 are 10uf, 0.1uf, 10uf and 330nf respectively;

the principle of the circuit is as follows:

and the high-precision operational amplifier judges whether the current is in a forward conduction state or a reverse conduction state by comparing the voltages at two ends of the field effect tube. If the high-side N-channel field effect transistor is in a forward conduction state, a high level is output to drive the high-side field effect transistor to be normally conducted, and if the high-side N-channel field effect transistor is in a reverse state, a low level is output to drive the long-line transistor to be turned off and output, so that the purposes of unidirectional conduction and current backflow prevention are achieved.

The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.

Claims

1. The utility model provides a solar energy prevents flowing backward control circuit, includes boost module (1), voltage comparison module (2) and high side N channel field effect transistor (3), its characterized in that:

the boost module (1) comprises a diode D1, resistors R1, R3 and R6, capacitors C1, C3 and C4, and a boost chip, wherein the source of the diode D1 is connected with a signal output end and a middle live wire L1, a connector between the resistors R1 and R3 and the resistor R6 is grounded in parallel, the resistor R6 and the capacitor C1 are grounded after being connected in series, the resistors R1 and R3 and the capacitor C1 are grounded after being connected in series, and the boost chip and each unit form a boost end and then are grounded;

the boost module (1) is electrically connected with the voltage comparison module (2), the voltage comparison module (2) comprises a capacitor C2, resistors R5 and R2 and a voltage level chip, the capacitor C2 is connected with the boost module (1) in series and then grounded, the boost module (1) is connected with the overvoltage level chip in series and then grounded, the voltage level chip is connected with a gate loop, and the positive and negative ends of the voltage level chip are respectively connected with the resistor R5 and the resistor R2 in series;

the voltage comparison module (2) is connected with the high-side N-channel field effect transistor (3) in parallel through a resistor R5 and a resistor R2, the high-side N-channel field effect transistor (3) comprises an NMOS (N-channel metal oxide semiconductor) tube, the NMOS tube is provided with 1 to 8 ports, the 1 to 3 ports are S poles, the 4 port is G poles, the 5 to 8 ports are D poles, the S poles and the G are connected with the input end through the resistor R4, and the D poles are connected with the output end.