CN214959450U - Differential Colpitts FBAR oscillator circuit based on improved body bias technology - Google Patents
Differential Colpitts FBAR oscillator circuit based on improved body bias technology Download PDFInfo
- Publication number
- CN214959450U CN214959450U CN202121139913.3U CN202121139913U CN214959450U CN 214959450 U CN214959450 U CN 214959450U CN 202121139913 U CN202121139913 U CN 202121139913U CN 214959450 U CN214959450 U CN 214959450U
- Authority
- CN
- China
- Prior art keywords
- improved body
- body bias
- fbar
- power supply
- supply voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
The utility model relates to a differential Colpitts FBAR oscillator circuit based on improved body bias technology, which comprises a power supply voltage port, a core oscillation circuit unit with improved body bias and a differential output port which are connected in sequence; the power supply voltage port is used for providing power supply voltage; the core oscillation circuit unit with the improved body bias provides negative resistance for compensating energy loss maintaining oscillation of the resonant circuit, and the differential output port is used for outputting a sinusoidal signal. The utility model discloses the realization also can realize great amplitude of oscillation under lower mains voltage, has satisfied also can start stably under the low-power consumption, and the integrated level of whole circuit is high, in addition, has increased loop gain through difference Colpitts structure, has reduced the requirement of shaking of traditional Colpitts structure.
Description
Technical Field
The utility model relates to an oscillator design field, concretely relates to difference Colpitts FBAR oscillator circuit based on improve body biasing technique.
Background
With the development of the internet of things, many emerging industries, such as the consumer industry, are driven, and the requirements of portable devices on power consumption are extremely high. Unfortunately, conventional Colpitts oscillators are rarely used in integrated circuits because of their single-ended nature and high start-up current requirements, which require significant power consumption to meet stability.
Disclosure of Invention
In view of this, the utility model aims at providing a difference Colpitts FBAR oscillator circuit based on improve body biasing technique realizes also can realizing great amplitude of oscillation under lower mains voltage, has satisfied also can start stably under the low-power consumption, and whole circuit integrated level is high, in addition, has increased loop gain through difference Colpitts structure, has reduced the requirement of shaking of traditional Colpitts structure.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
a differential Colpitts FBAR oscillator circuit based on an improved body bias technology comprises a power supply voltage port, a core oscillation circuit unit with an improved body bias and a differential output port which are connected in sequence; the power supply voltage port is used for providing power supply voltage; the core oscillation circuit unit with the improved body bias provides negative resistance for compensating energy loss maintaining oscillation of the resonant circuit, and the differential output port is used for outputting a sinusoidal signal.
Further, the outputting the sinusoidal signals comprises outputting two sinusoidal signals with a frequency of 1.93GHz and a phase difference of 180 °.
Furthermore, the core oscillation circuit unit with the improved body bias adopts an improved C-type oscillator topological structure, an additional RC filter network is introduced, and a direct current bias voltage is provided for the grid electrode of the NMOS pair through a bias voltage port.
Further, the core oscillation circuit unit with the improved body bias specifically comprises an MOS (metal oxide semiconductor) transistorNM 1、NM 2、NM 3、NM 4Feedback capacitanceC 1、C 2、C 3、C 4FBAR resonator and resistorR 1、R 2、R 3、R 4(ii) a The resistorR 3Positive terminal, resistanceR 4The positive end of the tube,NM 1The drain electrode of,NM 2Are all connected with a supply voltage VDDNM 1、NM 4 Grid and feedback capacitorC 1The positive end of the tube,R 4The negative terminals of the FBAR resonators are connected with one end of the FBAR resonator; the above-mentionedNM 2、NM 3Grid and feedback capacitorC 2Positive terminal ofR 4The negative terminals of the FBAR resonators are connected with the other ends of the FBAR resonators; the feedback capacitorC 1Negative terminal and feedback capacitanceC 3Is connected with the positive terminal; the feedback capacitorC 2Negative terminal and feedback capacitanceC 4Is connected with the positive terminal; the feedback capacitorC 3Negative terminal of, feedback capacitanceC 4 The negative terminal of,NM 3The source electrode of,NM 4The sources of the first and second transistors are all connected to GND; the above-mentionedNM 1、NM 2Respectively with the source electrode ofNM 3、NM 4Is connected with the drain electrode of the transistor; the above-mentionedNM 1、NM 3Respectively with the substrate end ofR 1Are connected at both ends, andR 1the positive terminal of also andNM 1the drain end of the first transistor is connected; the above-mentionedNM 2、NM 4At the substrate end respectivelyR 2Are connected at both ends, andR 2the positive terminal of also andNM 2the drain terminal of (1) is connected.
Further, the power supply voltage port comprises a power supply port and a bias voltage port, and is used for providing a power supply voltage of 0.5V, and the frequency of the oscillator is 1.93 GHz.
Compared with the prior art, the utility model following beneficial effect has:
the utility model discloses an improve body biasing technique, even also can realize great swing under lower mains voltage, satisfied also can start stably under the low-power consumption, and whole circuit integratable degree is high, in addition, increased loop gain through difference Colpitts structure, reduced the requirement of shaking of traditional Colpitts structure.
Drawings
Fig. 1 is a schematic diagram of a circuit module of the present invention;
fig. 2 is a diagram of an improved body-biasing technique and a conventional body-biasing implementation in an embodiment of the present invention;
fig. 3 is a schematic diagram of a circuit connection according to an embodiment of the present invention;
fig. 4 is a model of NMOS versus small signal based on the improved body-bias technique of the present invention.
Detailed Description
The present invention will be further explained with reference to the drawings and the embodiments.
Referring to fig. 1, the present invention provides a differential Colpitts FBAR oscillator circuit based on an improved body bias technique, which includes a power supply voltage port, a core oscillation circuit unit with an improved body bias, and a differential output port, which are connected in sequence; the power supply voltage port is used for providing power supply voltage; the core oscillation circuit unit with the improved body bias provides negative resistance for compensating energy loss maintaining oscillation of the resonant circuit, and the differential output port is used for outputting a sinusoidal signal.
Preferably, in this embodiment, outputting the sinusoidal signal includes outputting two sinusoidal signals having a frequency of 1.93GHz and a phase difference of 180 °.
Preferably, in the present embodiment, the core oscillator circuit unit with improved body bias adopts an improved C-type oscillator topology, and introduces an additional oscillatorRCAnd the filter network provides a direct current bias voltage for the grid electrode of the NMOS pair through the bias voltage port.
Referring to fig. 3, the core oscillation circuit unit with improved body bias specifically comprises a MOS transistorNM 1、NM 2、NM 3、NM 4Feedback capacitanceC 1、C 2、C 3、C 4FBAR resonator and resistorR 1、R 2、R 3、R 4(ii) a The resistorR 3Positive terminal, resistanceR 4The positive end of the tube,NM 1The drain electrode of,NM 2Are all connected with a supply voltage VDDNM 1、NM 4 Grid and feedback capacitorC 1The positive end of the tube,R 4The negative terminals of the FBAR resonators are connected with one end of the FBAR resonator; the above-mentionedNM 2、NM 3Grid and feedback capacitorC 2Positive terminal ofR 4The negative terminals of the FBAR resonators are connected with the other ends of the FBAR resonators; the feedback capacitorC 1Negative terminal and feedback capacitanceC 3Is connected with the positive terminal; the feedback capacitorC 2Negative terminal and feedback capacitanceC 4Is connected with the positive terminal; the feedback capacitorC 3Negative terminal of, feedback capacitanceC 4 The negative terminal of,NM 3The source electrode of,NM 4The sources of the first and second transistors are all connected to GND; the above-mentionedNM 1、NM 2Respectively with the source electrode ofNM 3、NM 4Is connected with the drain electrode of the transistor; the above-mentionedNM 1、NM 3Respectively with the substrate end ofR 1Are connected at both ends, andR 1the positive terminal of also andNM 1the drain end of the first transistor is connected; the above-mentionedNM 2、NM 4At the substrate end respectivelyR 2Are connected at both ends, andR 2the positive terminal of also andNM 2the drain terminal of (1) is connected.
Preferably, the power supply voltage port comprises a power supply port and a bias voltage port, and is used for providing a power supply voltage of 0.5V, and the frequency of the oscillator is 1.93 GHz.
In this embodiment, as shown in fig. 4, in order to provide the body-source terminal PN junction voltages of the two transistors, a resistor connection is used between their body terminals to form a forward bias voltage division loop, and a PN junction voltage drop operating in the cut-off region is generated by appropriately selecting the resistance value of R2, thereby implementing an ultra-low power self-bias loop.
The PN junction forms a voltage dividing diode in a loop, the voltage at two ends of the PN junction is smaller than the starting voltage, so that the PN junction only works in a cut-off region, and the characteristic equation of the PN junction IV is shown as the following formula:
in the above formula, eta is an ideal coefficient,V Tin order to realize the thermal voltage, the device is provided with a heating device,I Sin order to reverse the bias leakage current,V PNis the PN junction voltage;
in the cut-off region (0)<V PN<V cut-in) In time, because the current passing through the PN junction is very small, a self-bias loop with ultra-low power consumption is formed
Starting from the voltage equation of the self-bias loop, we obtain:
in the above formula, eta is an ideal coefficient,
in order to realize the thermal voltage, the device is provided with a heating device,V BS4is composed ofNM 4The voltage at the source end of the tube,I 2for the current to flow through the ultra low power self-bias loop,I S4showing the reverse bias leakage current of the PN junction of the NM4 transistor source.
In the above formulaV DB2Is composed ofNM 2The voltage at the drain end of the tube,V BS4is composed ofNM 4The source voltage of the tube.
The above is only the preferred embodiment of the present invention, and all the equivalent changes and modifications made according to the claims of the present invention should be covered by the present invention.
Claims (5)
1. A differential Colpitts FBAR oscillator circuit based on an improved body bias technology is characterized by comprising a power supply voltage port, a core oscillation circuit unit with an improved body bias and a differential output port which are connected in sequence; the power supply voltage port is used for providing power supply voltage; the core oscillation circuit unit with the improved body bias provides negative resistance for compensating energy loss maintaining oscillation of the resonant circuit, and the differential output port is used for outputting a sinusoidal signal.
2. The differential Colpitts FBAR oscillator circuit based on the improved body bias technique of claim 1, wherein said outputting the sinusoidal signal comprises outputting two sinusoidal signals having a frequency of 1.93GHz and a phase difference of 180 °.
3. The differential Colpitts FBAR oscillator circuit based on the improved body bias technology of claim 1, wherein the core oscillator circuit unit with the improved body bias adopts an improved C-type oscillator topology, and introduces an additional RC filter network to provide a direct current bias voltage for the grid electrode of the NMOS pair through a bias voltage port.
4. The differential Colpitts FBAR oscillator circuit based on the improved body bias technology of claim 1, wherein the core oscillation circuit unit of the improved body bias specifically comprises MOS (metal oxide semiconductor) tubesNM 1、NM 2、NM 3、NM 4Feedback capacitanceC 1、C 2、C 3、C 4FBAR resonator and resistorR 1、R 2、R 3、R 4(ii) a The resistorR 3Positive terminal, resistanceR 4The positive end of the tube,NM 1The drain electrode of,NM 2OfAll electrodes are connected with a power supply voltage VDDNM 1、NM 4 Grid and feedback capacitorC 1Positive terminal of (1), R4The negative terminals of the FBAR resonators are connected with one end of the FBAR resonator; the above-mentionedNM 2、NM 3Grid and feedback capacitorC 2Positive terminal and R4The negative terminals of the FBAR resonators are connected with the other ends of the FBAR resonators; the feedback capacitorC 1Negative terminal and feedback capacitanceC 3Is connected with the positive terminal; the feedback capacitorC 2Negative terminal and feedback capacitanceC 4Is connected with the positive terminal; the feedback capacitorC 3Negative terminal of, feedback capacitanceC 4 The negative terminal of,NM 3The source electrode of,NM 4The sources of the first and second transistors are all connected to GND; the above-mentionedNM 1、NM 2Respectively with the source electrode ofNM 3、NM 4Is connected with the drain electrode of the transistor; the above-mentionedNM 1、NM 3Respectively with the substrate end ofR 1Are connected at both ends, andR 1the positive terminal of also andNM 1the drain end of the first transistor is connected; the above-mentionedNM 2、NM 4At the substrate end respectivelyR 2Are connected at both ends, andR 2the positive terminal of also andNM 2the drain terminal of (1) is connected.
5. The differential Colpitts FBAR oscillator circuit based on the improved body bias technique of claim 1, wherein the power supply voltage ports comprise a power supply port and a bias voltage port for providing a power supply voltage of 0.5V, and the oscillator frequency is 1.93 GHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121139913.3U CN214959450U (en) | 2021-05-26 | 2021-05-26 | Differential Colpitts FBAR oscillator circuit based on improved body bias technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121139913.3U CN214959450U (en) | 2021-05-26 | 2021-05-26 | Differential Colpitts FBAR oscillator circuit based on improved body bias technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214959450U true CN214959450U (en) | 2021-11-30 |
Family
ID=79058458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121139913.3U Active CN214959450U (en) | 2021-05-26 | 2021-05-26 | Differential Colpitts FBAR oscillator circuit based on improved body bias technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214959450U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115118224A (en) * | 2022-07-18 | 2022-09-27 | 天津大学 | Low-power consumption FBAR oscillation circuit with enhanced negative resistance |
-
2021
- 2021-05-26 CN CN202121139913.3U patent/CN214959450U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115118224A (en) * | 2022-07-18 | 2022-09-27 | 天津大学 | Low-power consumption FBAR oscillation circuit with enhanced negative resistance |
| CN115118224B (en) * | 2022-07-18 | 2024-07-12 | 天津大学 | Negative resistance enhanced low-power-consumption FBAR oscillation circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Perumana et al. | A low-power fully monolithic subthreshold CMOS receiver with integrated LO generation for 2.4 GHz wireless PAN applications | |
| CN103066942A (en) | Quick-start crystal oscillator circuit with ultra-low power consumption | |
| KR19990025790A (en) | Multiple Feedback Loop Ring Oscillator and its Delay Cells | |
| CN107248847B (en) | Differential reference voltage-controlled oscillator | |
| CN108199687B (en) | Transconductance linearization broadband LC type voltage-controlled oscillator and adjustable capacitor array circuit | |
| CN103956986B (en) | Differential active inductor with tunable high Q value | |
| KR20100123381A (en) | Differential colpitts voltage controlled oscillstor for improving negative resistance | |
| CN103095217A (en) | Low phase noise voltage-controlled oscillator | |
| CN105932976A (en) | Temperature compensation circuit for crystal oscillator | |
| CN201039084Y (en) | Low-amplitude error and low-phase noise RF voltage controlled surge based on capacitance compensation | |
| CN214959450U (en) | Differential Colpitts FBAR oscillator circuit based on improved body bias technology | |
| CN113114168B (en) | Differential colpitts FBAR oscillator circuit and method based on improved body bias technology | |
| CN202077010U (en) | Low power, rapid starting, and high frequency crystal oscillation driving circuit | |
| CN101127506A (en) | A novel CMOS oscillator circuit | |
| TWI713300B (en) | Voltage controlled oscillator | |
| CN112953464A (en) | Low-power-consumption large-bandwidth high-resolution low-phase noise digital controlled oscillator | |
| CN112468136A (en) | Ultra-low power consumption drive circuit | |
| CN1953319A (en) | High frequency colpitts oscillation circuit | |
| CN111277222A (en) | Current multiplexing voltage-controlled oscillator based on grid-source transformer feedback | |
| JP7537672B2 (en) | Oscillator circuit and electronic device | |
| CN110460307A (en) | A kind of temperature self-adaptation FBAR oscillating circuit | |
| CN113395042B (en) | High-frequency low-power-consumption low-jitter voltage-controlled oscillator | |
| CN113114167A (en) | Stack-based low-power-consumption FBAR oscillator circuit and working method thereof | |
| Ghorbel et al. | Ultra low power RF cross-coupled VCO design in the subthreshold regime with high immunity to PVT variations in 130nm CMOS technology | |
| CN214959478U (en) | Low-power consumption FBAR oscillator circuit based on heap |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |