CN214694453U - 一种区熔单晶炉高频加热掺杂线圈 - Google Patents
一种区熔单晶炉高频加热掺杂线圈 Download PDFInfo
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- CN214694453U CN214694453U CN202120290488.1U CN202120290488U CN214694453U CN 214694453 U CN214694453 U CN 214694453U CN 202120290488 U CN202120290488 U CN 202120290488U CN 214694453 U CN214694453 U CN 214694453U
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- 239000013078 crystal Substances 0.000 title claims abstract description 31
- 238000004857 zone melting Methods 0.000 title claims abstract description 23
- 238000010438 heat treatment Methods 0.000 title claims abstract description 17
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- 239000000498 cooling water Substances 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 239000012141 concentrate Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 6
- 239000000155 melt Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
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CN202120290488.1U CN214694453U (zh) | 2021-02-01 | 2021-02-01 | 一种区熔单晶炉高频加热掺杂线圈 |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |