CN214544256U

CN214544256U - Wafer-level packaging acoustic surface device integrated with IPD (inter-digital-diode)

Info

Publication number: CN214544256U
Application number: CN202120466458.1U
Authority: CN
Inventors: 陈云姣; 王为标; 陆增天
Original assignee: Wuxi Haoda Electronic Co Ltd
Current assignee: Wuxi Haoda Electronic Co Ltd
Priority date: 2021-03-03
Filing date: 2021-03-03
Publication date: 2021-10-29
Anticipated expiration: 2031-03-03

Abstract

The utility model discloses an integrated IPD's wafer level encapsulation sound table device relates to sound table device field, includes sound table chip, substrate structure and IPD chip from bottom to top in proper order, and the substrate structure includes substrate and the oxide layer that is located the substrate second surface, is equipped with the through-hole that runs through in the substrate, is equipped with the intercommunication structure in the through-hole, and the both ends of intercommunication structure are respectively through the first surface of substrate and the top layer of oxide layer for connect sound table chip and IPD chip; the outer surface of the acoustic surface chip is provided with a tin ball serving as a signal end of the wafer level packaging acoustic surface device to be connected with an external device, and/or a metal bonding pad of the IPD chip serving as a signal end of the wafer level packaging acoustic surface device to be connected with the external device. The acoustic surface device realizes miniaturization, and integrates the IPD chip on the substrate through the vertical conduction characteristic of the communication structure on the premise of not changing the size of the chip, so that the signal derivation layout design is more random, and the acoustic surface device has stronger market demand applicability.

Description

Wafer-level packaging acoustic surface device integrated with IPD (inter-digital-diode)

Technical Field

The utility model belongs to the technical field of the sound table device and specifically relates to a wafer level encapsulation sound table device of integrated IPD.

Background

The mobile communication technology is developed to 2G, 3G, 4G or even 5G, the frequency is continuously increased, and the frequency range is continuously increased, so that the related radio frequency devices face new challenges in the face of the application requirements. Filters, duplexers, and resonators are major components of radio frequency devices, and since it is often necessary to use several dozen filters and duplexers in wireless devices, the radio frequency devices are required to be miniaturized, integrated, and highly reliable, and the design of the radio frequency devices such as filters and duplexers is becoming very important.

The acoustic surface device has the advantages of stable performance, convenient use, good selectivity, wide frequency band and the like, meets the requirements of modern communication system equipment and mobile communication on lightness, thinness, shortness, high frequency, digitalization, high performance, high reliability and the like, and is widely applied to the communication market. In the past, the acoustic meter devices are designed by depending on a substrate, other parts of the acoustic meter devices need additional circuit matching, the substrate generally comprises a matching circuit, or a matching capacitor inductor is added on a test fixture to realize the best performance, and the system cost is additionally increased, so that the cost is further reduced, and the miniaturization becomes a main overcoming problem of the acoustic meter devices.

Generally, 5G communication has a plurality of high-frequency bands such as n79, n78, and the like, and most of sound meter devices are only suitable for the frequency bands within 3GHz, and the market urgently needs components such as filters, duplexers and the like suitable for the frequency bands above 3 GHz. How to integrate a plurality of radio frequency devices into a whole to further realize the requirements of miniaturization and low cost of the current communication radio frequency devices is a difficult point of the development of the mobile communication technology.

SUMMERY OF THE UTILITY MODEL

The present invention provides an IPD-integrated wafer-level packaged acoustic surface device, which addresses the above-mentioned problems and needs. Through the vertical conduction characteristic of the through hole and the communication structure arranged in the substrate, the interconnection of the IPD chip and the acoustic surface chip is realized, so that the signal derivation layout design is more random, the design requirement is reduced, and the higher interconnection density is obtained.

The technical scheme of the utility model as follows:

an IPD integrated wafer-level packaging acoustic surface device sequentially comprises an acoustic surface chip, a substrate structure and an IPD chip from bottom to top, wherein the substrate structure comprises a substrate and an oxide layer located on the second surface of the substrate, a through hole is formed in the substrate, a communicating structure is arranged in the through hole, and two ends of the communicating structure respectively reach the first surface of the substrate and the surface layer of the oxide layer and are used for connecting the acoustic surface chip and the IPD chip;

the outer surface of the acoustic surface chip is provided with a tin ball serving as a signal end of the wafer level packaging acoustic surface device to be connected with an external device, and/or a metal bonding pad of the IPD chip serving as a signal end of the wafer level packaging acoustic surface device to be connected with the external device.

Its further technical scheme does, the first surface of acoustic meter chip flip-chip setting at the substrate, including the interdigital transducer, first conductive electrode, wall membrane and dura mater, the first surface of substrate is arranged in to interdigital transducer and first conductive electrode, and first conductive electrode sets up around the interdigital transducer, the first end of intercommunication structure is connected to first conductive electrode electricity, the wall membrane sets up around the interdigital transducer, and cover first conductive electrode, the thickness of wall membrane is greater than the thickness of interdigital transducer, the dura mater is arranged in the wall membrane and is regarded as the surface of acoustic meter chip, the interdigital transducer is located the cavity that wall membrane and dura mater enclose, the wall membrane plays the supporting role, the dura mater plays isolation.

The sound meter chip also comprises a tin ball and a first metal column when the sound meter chip is connected with an external device, the tin ball is arranged on the hard film, the first metal column penetrates through the hard film, one end of the first metal column extends into the wall film to be electrically connected with the first conductive electrode, and the other end of the first metal column is electrically connected with the tin ball.

The IPD chip comprises an IPD wiring layer and a protective layer, wherein the IPD wiring layer is arranged on the oxide layer, the IPD wiring layer is electrically connected with the second end of the communicating structure, and the protective layer is arranged on the oxide layer and covers the IPD wiring layer.

The IPD chip further comprises a metal pad and a second conductive electrode when the IPD chip is connected with an external device, the second conductive electrode is arranged on the oxide layer and electrically connected with a second end of the communicating structure, the metal pad is arranged on the second conductive electrode and the IPD wiring layer, the protective layer is arranged on the oxide layer, covers the IPD wiring layer and the second conductive electrode, wraps the periphery of the metal pad, and the surface of the metal pad is exposed.

The communication structure comprises an insulating layer and a second metal column, the insulating layer is pasted in the through hole, the second metal column is arranged in the insulating layer, the first end of the second metal column directly reaches the first surface of the substrate, and the second end of the second metal column directly reaches the surface layer of the oxide layer.

The further technical scheme is that the substrate is made of piezoelectric materials including tantalum and niobium, or semiconductor substrate materials including silicon wafers and glass.

The further technical scheme is that the interdigital transducer is made of copper or aluminum, the first metal column is made of copper, aluminum and tungsten, and the tin ball is made of tin.

The utility model has the beneficial technical effects that:

according to the method, the acoustic surface chip and the IPD chip are respectively integrated on the upper surface and the lower surface of a substrate, the interdigital transducer is wrapped by a cavity enclosed by a wall film and a hard film, so that the surface of the interdigital transducer is free from dirt, chip-level circuit matching is realized through the IPD chip, the cost is greatly reduced, the IPD chip is widely applied, passive devices such as a balun, a duplexer and a filter can be manufactured, the application frequency is high, and the application blank that the acoustic surface device is only used for the frequency below 3GHz is filled; through the vertical conduction characteristic of the through hole and the communication structure arranged in the substrate, the interconnection of the IPD chip and the acoustic surface chip is realized, the signal leading-out layout design is more random, signals can be led in and led out through a metal bonding pad of the IPD chip, signals can be led in and led out through a tin ball of the acoustic surface chip, or signals can be led in and led out through the metal bonding pad of the IPD chip and the tin ball of the acoustic surface chip, the design requirements are reduced, the higher interconnection density is obtained, the size is smaller, and the weight is lighter.

Drawings

Fig. 1 is a schematic diagram of an IPD integrated wafer level package acoustic surface device according to an embodiment of the present invention.

Fig. 2 is a schematic diagram of an IPD integrated wafer level package acoustic surface device according to a second embodiment of the present invention.

Fig. 3 is a schematic diagram of an IPD integrated wafer level package acoustic surface device according to a third embodiment of the present invention.

Detailed Description

The following describes the embodiments of the present invention with reference to the accompanying drawings.

The first embodiment is as follows:

as shown in fig. 1, an IPD-integrated wafer-level package acoustic surface device sequentially includes an acoustic surface chip 100, a substrate structure 200, and an IPD chip 300 from bottom to top. The substrate structure 200 comprises a substrate 201 and an oxide layer 202 located on the second surface of the substrate 201, a through hole is formed in the substrate 201, a communication structure is arranged in the through hole, and two ends of the communication structure respectively reach the first surface of the substrate 201 and the surface layer of the oxide layer 202 and are used for connecting the acoustic surface chip 100 and the IPD chip 300. The communication structure comprises an insulating layer 203 and a second metal column 204, wherein the insulating layer 203 is pasted in the through hole, the second metal column 204 is arranged in the insulating layer 203, the first end of the second metal column 204 is directly connected to the first surface of the substrate 201, and the second end of the second metal column 204 is directly connected to the surface layer of the oxide layer 202.

Optionally, the substrate 201 is made of a piezoelectric material, including tantalum, niobium, or the like, or made of a semiconductor substrate 201 material, including a silicon wafer, glass, or the like.

Optionally, the insulating layer 203 is made of insulating material such as polyimide, parylene, benzocyclobutene, silicon dioxide, or silicon nitride, and the second metal pillar 204 is made of copper, aluminum, or tungsten.

The surface acoustic chip 100 is flip-chip mounted on a first surface of a substrate 201, and includes an interdigital transducer 101, a first conductive electrode 102, a wall film 103, a hard film 104, a solder ball 105, and a first metal pillar 106. The interdigital transducer 101 and the first conductive electrode 102 are arranged on the first surface of the substrate 201, the first conductive electrode 102 is arranged around the interdigital transducer 101, the first conductive electrode 102 is electrically connected with the first end of the communicating structure, namely, the first end of the second metal column 204, the wall film 103 is arranged around the interdigital transducer 101 and covers the first conductive electrode 102, the thickness of the wall film 103 is larger than that of the interdigital transducer 101, the hard film 104 is arranged on the wall film 103 and serves as the outer surface of the acoustic surface chip 100, the interdigital transducer 101 is arranged in a cavity formed by the wall film 103 and the hard film 104, the wall film 103 plays a supporting role, the hard film 104 plays an isolating role, and the requirements that the surface of the interdigital transducer 101 is not dirty and cannot be contacted with other media are met. The first metal pillar 106 penetrates through the hard film 104, one end of the first metal pillar extends into the wall film 103 to be electrically connected with the first conductive electrode 102, the other end of the first metal pillar is electrically connected with the solder ball 105, and the solder ball 105 is arranged on the outer surface of the acoustic watch chip 100 and serves as a signal end of the wafer-level packaging acoustic watch device to be connected with an external device.

Optionally, the material of the interdigital transducer 101 is copper or aluminum, the material of the first metal pillar 106 is copper, aluminum, tungsten, and the material of the solder ball 105 is tin.

The IPD chip 300 comprises an IPD wiring layer 301, a protective layer 302, a metal pad 303 and a second conductive electrode 304, the IPD wiring layer 301 and the second conductive electrode 304 are disposed on the oxide layer 202, the second conductive electrode 304 is disposed around the IPD wiring layer 301, the second conductive electrode 304 is electrically connected to the second end of the connection structure, that is, to the second end of the second metal pillar 204, the metal pad 303 is disposed on the second conductive electrode 304 and the IPD wiring layer 301, the protective layer 302 is disposed on the oxide layer 202, covers the IPD wiring layer 301 and the second conductive electrode 304, and wraps around the metal pad 303, the surface of the metal pad 303 is exposed, and the metal pad 303 of the IPD chip 300 is used as a signal terminal of the wafer-level package acoustic surface device to be connected to an external device.

The wafer level packaging acoustic surface device of the embodiment conducts signals with an external device through the solder balls 105 and the metal bonding pads 303, namely, two sides of the acoustic surface device can be welded, welding randomness is increased, and the weldability of the chip is greatly improved.

Example two:

as shown in fig. 2, an IPD-integrated wafer-level packaged acoustic surface device sequentially includes an acoustic surface chip 100, a substrate structure 200, and an IPD chip 300 from bottom to top. The structures of the acoustic surface chip 100 and the substrate structure 200 are the same as those of the first embodiment, and are not described herein again.

The IPD chip 300 includes an IPD wiring layer 301 and a protection layer 302, wherein the IPD wiring layer 301 is electrically connected to a second end of the connection structure, that is, to a second end of the second metal pillar 204, and the protection layer 302 is disposed on the oxide layer 202 and covers the IPD wiring layer 301.

The wafer-level package acoustic surface device of the embodiment conducts signals with an external device through the solder balls 105, the IPD chip 300 is designed as a matching circuit required by the acoustic surface chip 100, and when the IPD chip 300 does not need signal external connection, a welding structure (i.e., the metal pad 303 and the second conductive electrode 304) of the IPD chip 300 is omitted according to design requirements, so as to reduce cost.

Example three:

as shown in fig. 3, an IPD-integrated wafer-level package acoustic surface device sequentially includes an acoustic surface chip 100, a substrate structure 200, and an IPD chip 300 from bottom to top. The substrate structure 200 and the IPD chip 300 are the same as those in the first embodiment, and thus, the description thereof is omitted.

The acoustic surface chip 100 is arranged on a first surface of a substrate 201 in a flip-chip mode and comprises an interdigital transducer 101, a first conductive electrode 102, a wall film 103 and a hard film 104, the interdigital transducer 101 and the first conductive electrode 102 are arranged on the first surface of the substrate 201, the first conductive electrode 102 is arranged around the interdigital transducer 101, the first conductive electrode 102 is electrically connected with a first end of a communicating structure, namely, is electrically connected with a first end of a second metal column 204, the wall film 103 is arranged around the interdigital transducer 101 and covers the first conductive electrode 102, the thickness of the wall film 103 is larger than that of the interdigital transducer 101, the hard film 104 is arranged on the wall film 103 and serves as the outer surface of the acoustic surface chip 100, the interdigital transducer 101 is located in a cavity defined by the wall film 103 and the hard film 104, the wall film 103 plays a supporting role, and the hard film 104 plays an isolation role.

The acoustic surface chip 100 is designed to be a certain resonance structure required by the IPD chip 300, or one or even a plurality of integrated radio frequency chips, and similarly, when the acoustic surface chip 100 does not need signal external connection, the soldering structure (i.e., the solder ball 105 and the first metal column 106) of the acoustic surface chip 100 is omitted according to the design requirement, so that the cost is controllable.

What has been described above is only a preferred embodiment of the present application, and the present invention is not limited to the above embodiments. It is to be understood that other modifications and variations directly derivable or suggested by those skilled in the art without departing from the spirit and scope of the present invention are to be considered as included within the scope of the present invention.

Claims

1. The wafer-level packaging acoustic surface device integrated with the IPD is characterized by sequentially comprising an acoustic surface chip, a substrate structure and the IPD chip from bottom to top, wherein the substrate structure comprises a substrate and an oxide layer positioned on the second surface of the substrate, a through hole is formed in the substrate in a penetrating mode, a communicating structure is arranged in the through hole, two ends of the communicating structure respectively reach the first surface of the substrate and the surface layer of the oxide layer directly, and the communicating structure is used for connecting the acoustic surface chip and the IPD chip;

and a solder ball is arranged on the outer surface of the acoustic surface chip and is used as a signal end of the wafer level packaging acoustic surface device to be connected with an external device, and/or a metal bonding pad of the IPD chip is used as a signal end of the wafer level packaging acoustic surface device to be connected with the external device.

2. The integrated IPD wafer level package (CSP) SAW device of claim 1, the acoustic surface chip is arranged on the first surface of the substrate in an inverted mode and comprises an interdigital transducer, a first conductive electrode, a wall film and a hard film, the interdigital transducer and the first conductive electrode are arranged on the first surface of the substrate, and the first conductive electrode is arranged around the interdigital transducer, the first conductive electrode is electrically connected with the first end of the communicating structure, the wall membrane is arranged around the interdigital transducer, and covers the first conductive electrode, the thickness of the wall film is greater than the thickness of the interdigital transducer, the dura mater is arranged in conduct on the wall membrane the surface of sound table chip, the interdigital transducer is located in the cavity that wall membrane and dura mater enclose, the wall membrane plays supporting role, the dura mater plays isolation.

3. The integrated IPD wafer-level packaged acoustic surface device of claim 2, wherein when the acoustic surface chip is connected to the external device, the acoustic surface chip further comprises the solder ball and a first metal pillar, the solder ball is disposed on the hard film, the first metal pillar penetrates through the hard film, one end of the first metal pillar extends into the wall film to be electrically connected to the first conductive electrode, and the other end of the first metal pillar is electrically connected to the solder ball.

4. The integrated IPD wafer level package acoustic surface device of claim 1, wherein the IPD chip comprises an IPD wiring layer and a protective layer, the IPD wiring layer is disposed on the oxide layer, the IPD wiring layer is electrically connected to the second end of the via structure, and the protective layer is disposed on the oxide layer and covers the IPD wiring layer.

5. The integrated IPD wafer level package acoustic surface device of claim 4, wherein when the IPD chip is connected to the external device, the IPD chip further comprises the metal pad and a second conductive electrode, the second conductive electrode is disposed on the oxide layer and electrically connected to the second end of the via structure, the metal pad is disposed on the second conductive electrode and the IPD wiring layer, the protection layer is disposed on the oxide layer, covers the IPD wiring layer and the second conductive electrode, and wraps around the metal pad, and a surface of the metal pad is exposed.

6. The integrated IPD wafer level package acoustic surface device of any of claims 1 to 5, wherein the communication structure comprises an insulating layer and a second metal pillar, the insulating layer is applied in the via hole, the second metal pillar is disposed in the insulating layer, a first end of the second metal pillar is directly connected to the first surface of the substrate, and a second end of the second metal pillar is directly connected to the surface layer of the oxide layer.

7. The integrated IPD wafer-level packaged acoustic surface device according to claim 1 or 2, characterized in that the substrate material is a piezoelectric material, including tantalum and niobium, or a semiconductor substrate material, including silicon wafer and glass.

8. The integrated IPD wafer-level packaged acoustic surface device of claim 3, wherein the material of the interdigital transducer is copper or aluminum, the material of the first metal pillar is copper, aluminum, tungsten, and the material of the solder ball is tin.