WO2022138441A1 - High frequency module and communication apparatus - Google Patents

Abstract

A high frequency module of the present invention comprises: a mounting substrate having a first main surface and a second main surface opposing each other; a filter disposed on the first main surface of the mounting substrate; a resin layer disposed on the first main surface of the mounting substrate and covering at least a part of the filter; a metal layer covering a surface of the resin layer and connected to ground; and a solder bump connecting the filter and the metal layer. The filter includes a first filter surface disposed on the first main surface side of the mounting substrate, and a second filter surface opposing the first filter surface. The filter includes a plurality of first electrodes provided on the first filter surface side and connected to the mounting substrate, and a second electrode provided on the second filter surface side for ground connection. The solder bump is disposed on the second electrode and connects the second electrode and the metal layer.

Description

High frequency module and communication equipment

The present invention relates to a high frequency module and a communication device.

For example, Patent Document 1 discloses a module in which electronic components mounted on a mounting surface of a module substrate are sealed with a resin. The module described in Patent Document 1 includes a module board, an electronic component mounted on the mounting surface of the module board, and a resin layer provided on the mounting surface so as to cover the side surface of the electronic component. The upper surfaces of the electronic components and the resin layer each form the same surface.

International Publication No. 2014/013831

However, due to the miniaturization of electronic components and substrates, the module described in Patent Document 1 may not be able to sufficiently secure the ground for electronic components.

It is an object of the present invention to provide a high frequency module and a communication device that can sufficiently secure the ground of electronic components with the miniaturization of electronic components and substrates.

The high frequency module of one aspect of the present invention is
A mounting board having a first main surface and a second main surface facing each other,
A filter arranged on the first main surface of the mounting board and
A resin layer arranged on the first main surface of the mounting substrate and covering at least a part of the filter.
A metal layer that covers the surface of the resin layer and is connected to the ground,
A solder bump that connects the filter and the metal layer,
Equipped with
The filter has a first filter surface arranged on the first main surface side of the mounting board and a second filter surface facing the first filter surface.
The filter is
A plurality of first electrodes provided on the first filter surface side and connected to the mounting substrate, and
The second electrode for ground connection provided on the second filter surface side and
Have,
The solder bump is arranged on the second electrode and connects the second electrode and the metal layer.

The communication device of one aspect of the present invention is
With the high frequency module mentioned above,
A signal processing circuit connected to the high-frequency module and processing high-frequency signals,
To prepare for.

According to the present invention, it is possible to provide a high frequency module and a communication device that can sufficiently secure a ground for electronic components with the miniaturization of electronic components and substrates.

FIG. 3 is an exemplary circuit configuration diagram of a communication device including the high frequency module of the first embodiment according to the present invention. It is a schematic sectional drawing of an example of the high frequency module of Embodiment 1 which concerns on this invention. It is a schematic plan view of an example of the filter of the high frequency module of FIG. FIG. 3 is a cross-sectional view of the filter of FIG. 3 cut along the line AA. It is an exemplary flowchart of the manufacturing method of the high frequency module of Embodiment 1 which concerns on this invention. It is a schematic diagram which shows an example of the process of the manufacturing method of a high frequency module. It is a schematic diagram which shows an example of the process of the manufacturing method of a high frequency module. It is a schematic diagram which shows an example of the process of the manufacturing method of a high frequency module. It is a schematic diagram which shows an example of the process of the manufacturing method of a high frequency module. It is the schematic sectional drawing of the high frequency module of the modification 1. FIG. It is the schematic sectional drawing of the high frequency module of the modification 2. It is the schematic sectional drawing of the high frequency module of the modification 3. FIG. It is a schematic plan view of an example of the filter of the high frequency module of FIG. It is a schematic sectional drawing of an example of the high frequency module of Embodiment 2 which concerns on this invention.

(Background to the present invention)
In recent years, there has been an increasing demand for miniaturization of high-frequency modules, and therefore, for example, it is required to make electronic components such as filters smaller and to make the mounting board on which electronic components are mounted smaller.

For example, in a module for mounting a filter on a mounting board, the filter has a ground electrode on the side facing the mounting board. The ground electrode of the filter is connected to the ground pattern of the mounting board via bumps.

However, if the filter is made smaller, it becomes difficult to secure a sufficient space for arranging the ground electrode on the side facing the mounting board. Therefore, as the size of the filter becomes smaller, it becomes difficult to secure the ground of the filter.

If the mounting board is made smaller, it becomes difficult to secure a sufficient ground pattern on the mounting board. Alternatively, if the mounting board is made smaller, the position of the ground pattern of the mounting board is limited, so that it becomes difficult to arrange the ground pattern of the mounting board at a position facing the ground electrode of the filter. In this case, on the mounting board, the wiring pattern is routed from the ground pattern to the position facing the ground electrode of the filter. The ground electrode of the filter is connected to the ground pattern of the mounting board via bumps and wiring patterns.

In such a case, it may not be possible to obtain sufficient damping characteristics due to the routing of the wiring pattern. In addition, the routing of the wiring pattern hinders the miniaturization of the mounting board, and as a result, the miniaturization of the module may not be realized.

As described above, there is a problem that it becomes difficult to secure a ground for both electronic components and boards due to the miniaturization of electronic components and boards.

Therefore, the present inventors sufficiently secure the ground of electronic components by arranging a metal layer connected to the ground on the surface of the resin layer covering the filter and connecting the filter to the metal layer via solder bumps. He found a possible high-frequency module configuration and came up with the following invention.

The high-frequency module according to the first aspect of the present invention includes a mounting board having a first main surface and a second main surface facing each other, a filter arranged on the first main surface of the mounting board, and the mounting board. A resin layer arranged on the first main surface and covering at least a part of the filter, a metal layer covering the surface of the resin layer and connected to the ground, and a solder bump connecting the filter and the metal layer. The filter has a first filter surface arranged on the first main surface side of the mounting substrate, and a second filter surface facing the first filter surface. The solder has a plurality of first electrodes provided on the first filter surface side and connected to the mounting substrate, and a second electrode for ground connection provided on the second filter surface side. The bump is arranged on the second electrode and connects the second electrode and the metal layer.

In the high frequency module of the second aspect of the present invention, the solder bump may have a connecting surface exposed from the resin layer and connected to the metal layer.

In the high frequency module of the third aspect of the present invention, the plurality of first electrodes are at least one of a receiving electrode connected to a signal path for a received signal and a transmitting electrode connected to a signal path for a transmitted signal. On the other hand, the solder bump may be arranged at a position that does not overlap with the receiving electrode and the transmitting electrode in the height direction of the filter.

In the high frequency module of the fourth aspect of the present invention, the filter is an elastic wave filter having a circuit electrode, and the solder bump is arranged at a position not overlapping with the circuit electrode in the height direction of the filter. May be good.

In the high frequency module of the fifth aspect of the present invention, the filter may have a transmission filter provided in the signal path for the transmission signal.

In the high frequency module of the sixth aspect of the present invention, the filter may have a reception filter provided in the signal path for the reception signal.

The high-frequency module according to the seventh aspect of the present invention includes a plurality of the filters, a plurality of the solder bumps, and the plurality of filters include a first filter and a second filter, and the first filter is the first. The one height is different from the second height of the second filter, and the plurality of solder bumps are the first solder bump arranged on the second filter surface of the first filter and the second filter. It has a second solder bump arranged on the second filter surface, and the third height of the first solder bump may be different from the fourth height of the second solder bump.

In the high-frequency module of the eighth aspect of the present invention, the resin layer has a first resin surface in contact with the first main surface and a first resin surface facing the first resin surface on the first main surface side of the mounting substrate. It has two resin surfaces, and the metal layer may be arranged on the second resin surface.

In the high frequency module of the ninth aspect of the present invention, the metal layer may be formed of a metal film.

The high-frequency module according to the tenth aspect of the present invention may further include a circuit element arranged on the first main surface side of the mounting substrate and covered with the resin layer.

In the high frequency module of the eleventh aspect of the present invention, the height of the filter is smaller than the height of the circuit element.
The total height of the filter including the solder bumps may be larger than the height of the circuit element.

The high frequency module of the twelfth aspect of the present invention may further include an external connection terminal arranged on the second main surface of the mounting board.

In the high frequency module of the thirteenth aspect of the present invention, the second main surface of the mounting substrate may be exposed.

The high-frequency module according to the 14th aspect of the present invention may further include a circuit element arranged on the second main surface side of the mounting board.

The communication device of the fifteenth aspect of the present invention includes a high frequency module of any one of the first to fourteenth aspects and a signal processing circuit connected to the high frequency module and processing a high frequency signal.

Hereinafter, Embodiment 1 according to the present invention will be described with reference to the attached drawings. Further, in each figure, each element is exaggerated for the sake of easy explanation.

In addition, in the following, terms indicating relationships between elements such as parallel and vertical, terms indicating the shape of elements such as rectangles, and numerical ranges do not mean only strict meanings, but are substantially equivalent. It means that it includes a range, for example, a difference of about several percent.

Further, in the circuit configuration of the present disclosure, "connected" includes not only the case of being directly connected by a connection terminal and / or a wiring conductor, but also the case of being electrically connected via other circuit components. .. Also, "connected between A and B" means connected to both A and B between A and B.

In each of the following figures, the x-axis and the y-axis are axes orthogonal to each other on a plane parallel to the main surface of the substrate. Further, the z-axis is an axis perpendicular to the main surface of the substrate, the positive direction thereof indicates an upward direction, and the negative direction thereof indicates a downward direction.

Further, in the module configuration of the present disclosure, "planar view" means that an object is projected orthographically projected onto the xy plane from the positive side of the z-axis. "Parts are placed on the main surface of the board" means that in addition to the parts being placed on the main surface in contact with the main surface of the board, the parts are placed on the main surface without contacting the main surface. It includes being arranged above and having a part of the component embedded in the substrate from the main surface side.

Further, in the following, in A, B and C mounted on the substrate, "C is arranged between A and B in the plan view of the substrate (or the main surface of the substrate)" means that the substrate is used. It means that at least one of a plurality of line segments connecting an arbitrary point in A and an arbitrary point in B passes through the region C in a plan view. Further, the plan view of the substrate means that the substrate and the circuit elements mounted on the substrate are orthographically projected onto a plane parallel to the main surface of the substrate.

Further, in the following, the "transmission path" is a transmission line composed of a wiring through which a high-frequency transmission signal propagates, an electrode directly connected to the wiring, and a wiring or a terminal directly connected to the electrode. Means that. Further, the "reception path" means a transmission line composed of a wiring through which a high-frequency reception signal propagates, an electrode directly connected to the wiring, and a wiring or a terminal directly connected to the electrode. do.

(Embodiment 1)
[Communication device]
FIG. 1 is an exemplary circuit configuration diagram of a communication device 300 including the high frequency module 100 according to the first embodiment of the present invention. As shown in FIG. 1, the communication device 300 includes a high frequency module 100 and a signal processing circuit 301 connected to the high frequency module 100 and processing a high frequency signal.

The communication device 300 is, for example, a mobile phone (for example, a smartphone), but is not limited to this, and may be, for example, a wearable terminal (for example, a smart watch). The high frequency module 100 is a module capable of supporting, for example, a 4G (4th generation mobile communication) standard and a 5G (5th generation mobile communication) standard. The 4G standard is, for example, a 3GPP LTE standard (LTE: LongTermEvolution). The 5G standard is, for example, 5G NR (New Radio). The high frequency module 100 is a module capable of supporting carrier aggregation and dual connectivity.

The high frequency module 100 is configured so that, for example, a transmission signal (high frequency signal) input from the signal processing circuit 301 can be amplified and output to the antenna 310. Further, the high frequency module 100 is configured to amplify the received signal (high frequency signal) input from the antenna 310 and output it to the signal processing circuit 301. The signal processing circuit 301 is not a component of the high frequency module 100, but a component of the communication device 300 including the high frequency module 100. The high frequency module 100 is controlled by, for example, the signal processing circuit 301 included in the communication device 300. The communication device 300 includes a high frequency module 100 and a signal processing circuit 301. The communication device 300 further includes an antenna 310. The communication device 300 further includes a circuit board on which the high frequency module 100 is mounted. The circuit board is, for example, a printed wiring board. The circuit board has a ground electrode to which a ground potential is applied.

The signal processing circuit 301 includes, for example, an RF signal processing circuit 302 and a baseband signal processing circuit 303. The RF signal processing circuit 302 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on a high frequency signal. The RF signal processing circuit 302 performs signal processing such as up-conversion on the high frequency signal (transmission signal) output from the baseband signal processing circuit 303, and outputs the signal processed high frequency signal. Further, the RF signal processing circuit 302 performs signal processing such as down-conversion on the high frequency signal (received signal) output from the high frequency module 100, and uses the processed high frequency signal as a baseband signal processing circuit. Output to 303. The baseband signal processing circuit 303 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 303 generates an I-phase signal and a Q-phase signal from the baseband signal. The baseband signal is, for example, an audio signal, an image signal, or the like input from the outside. The baseband signal processing circuit 303 performs IQ modulation processing by synthesizing an I-phase signal and a Q-phase signal, and outputs a transmission signal. At this time, the transmission signal is generated as a modulation signal (IQ signal) in which a carrier signal having a predetermined frequency is amplitude-modulated with a period longer than the period of the carrier signal. The received signal processed by the baseband signal processing circuit 303 is used, for example, for displaying an image as an image signal or for a call as an audio signal. The high frequency module 100 transmits a high frequency signal (received signal, transmitted signal) between the antenna 310 and the RF signal processing circuit 302 of the signal processing circuit 301.

The high frequency module 100 includes a power amplifier 111 and a low noise amplifier 121. Further, the high frequency module 100 includes a plurality of transmission filters 112A and 112B (two in the illustrated example) and a plurality of reception filters 122A and 122B (two in the illustrated example). Further, the high frequency module 100 includes an output matching circuit 113 and an input matching circuit 123. Further, the high frequency module 100 includes a first switch 104, a second switch 105, and a third switch 106. Further, the high frequency module 100 includes a controller 115. Further, the high frequency module 100 includes a plurality of external connection terminals 80. The plurality of external connection terminals 80 include an antenna terminal 81, a signal input terminal 82, a signal output terminal 83, and a control terminal 84.

The power amplifier 111 is provided in the signal path T1 for the transmission signal. The power amplifier 111 has an input terminal and an output terminal. The power amplifier 111 amplifies the transmission signal of the first frequency band input to the input terminal and outputs it to the output terminal. The first frequency band includes, for example, a first communication band and a second communication band. The first communication band corresponds to the transmission signal passing through the transmission filter 112A, and is, for example, Band 11 of the 3GPP LTE standard. The second communication band corresponds to the transmission signal passing through the transmission filter 112B, and is, for example, Band 22 of the 3GPP LTE standard.

The input terminal of the power amplifier 111 is connected to the signal input terminal 82. The input terminal of the power amplifier 111 is connected to the signal processing circuit 301 via the signal input terminal 82. The signal input terminal 82 is a terminal for inputting a high frequency signal (transmission signal) from an external circuit (for example, a signal processing circuit 301) to the high frequency module 100. The output terminal of the power amplifier 111 is connected to the common terminal 150 of the second switch 105 via the output matching circuit 113. The power amplifier 111 is controlled by the controller 115.

The low noise amplifier 121 is provided in the signal path R1 for the received signal. The low noise amplifier 121 has an input terminal and an output terminal. The low noise amplifier 121 amplifies the received signal of the second frequency band input to the input terminal and outputs it from the output terminal. The second frequency band is, for example, the same as the first frequency band, and includes a first communication band and a second communication band.

The input terminal of the low noise amplifier 121 is connected to the common terminal 160 of the third switch 106 via the input matching circuit 123. The output terminal of the low noise amplifier 121 is connected to the signal output terminal 83. The output terminal of the low noise amplifier 121 is connected to the signal processing circuit 301 via, for example, the signal output terminal 83. The signal output terminal 83 is a terminal for outputting a high frequency signal (received signal) from the low noise amplifier 121 to an external circuit (for example, a signal processing circuit 301).

The transmission filter 112A is, for example, a filter whose pass band is the transmission band of the first communication band. The transmission filter 112B is, for example, a filter whose pass band is the transmission band of the second communication band. The transmission filters 112A and 112B are provided in the signal path T1 (T11, T12) for the transmission signal.

The reception filter 122A is, for example, a filter whose pass band is the reception band of the first communication band. The reception filter 122B is, for example, a filter having a reception band of the second communication band as a pass band. The reception filters 122A and 122B are provided in the signal path R1 (R11, R12) for the reception signal.

The first switch 104 has a common terminal 140 and a plurality of (two in the illustrated example) selection terminals 141 and 142. The common terminal 140 is connected to the antenna terminal 81. An antenna 310 is connected to the antenna terminal 81. The selection terminal 141 is connected to a connection point between the output terminal of the transmission filter 112A and the input terminal of the reception filter 122A. The selection terminal 142 is connected to a connection point between the output terminal of the transmission filter 112B and the input terminal of the reception filter 122B. The first switch 104 is, for example, a switch capable of connecting at least one of a plurality of selection terminals 141 and 142 to the common terminal 140. Here, the first switch 104 is, for example, a switch capable of one-to-one and one-to-many connections.

The first switch 104 is provided in both the signal path T1 (T11, T12) for the transmission signal and the signal path R1 (R11, R12) for the reception signal. More specifically, the first switch 104 is provided in the signal path T11 for the transmission signal provided with the power amplifier 111, the output matching circuit 113, the second switch 105, and the transmission filter 112A. Further, the first switch 104 is provided in the signal path T12 for the transmission signal provided with the power amplifier 111, the output matching circuit 113, the second switch 105, and the transmission filter 112B. Further, the first switch 104 is provided in the signal path R11 for the received signal provided with the reception filter 122A, the third switch 106, the input matching circuit 123, and the low noise amplifier 121. Further, the first switch 104 is provided in the signal path R12 for the received signal provided with the reception filter 122B, the third switch 106, the input matching circuit 123, and the low noise amplifier 121.

The first switch 104 is controlled by, for example, the signal processing circuit 301. The first switch 104 switches the connection state between the common terminal 140 and the plurality of selection terminals 141 and 142 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The first switch 104 is, for example, a switch IC (Integrated Circuit).

The second switch 105 has a common terminal 150 and a plurality of (two in the illustrated example) selection terminals 151 and 152. The common terminal 150 is connected to the output terminal of the power amplifier 111 via the output matching circuit 113. The selection terminal 151 is connected to the input terminal of the transmission filter 112A. The selection terminal 152 is connected to the input terminal of the transmission filter 112B. The second switch 105 is, for example, a switch capable of connecting at least one of a plurality of selection terminals 151 and 152 to the common terminal 150. Here, the second switch 105 is, for example, a switch capable of one-to-one and one-to-many connections. The second switch 105 is a switch having a function of switching signal paths T11 and T12 for a plurality of transmission signals having different communication bands from each other.

The second switch 105 is controlled by, for example, the signal processing circuit 301. The second switch 105 switches the connection state between the common terminal 150 and the plurality of selection terminals 151 and 152 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The second switch 105 is, for example, a switch IC.

The third switch 106 has a common terminal 160 and a plurality of (two in the illustrated example) selection terminals 161, 162. The common terminal 160 is connected to the input terminal of the low noise amplifier 121 via the input matching circuit 123. The selection terminal 161 is connected to the output terminal of the reception filter 122A. The selection terminal 162 is connected to the output terminal of the reception filter 122B. The third switch 106 is, for example, a switch capable of connecting at least one of a plurality of selection terminals 161, 162 to the common terminal 160. Here, the third switch 106 is, for example, a switch capable of one-to-one and one-to-many connections. The third switch 106 is a switch having a function of switching signal paths R11 and R12 for a plurality of received signals having different communication bands from each other.

The third switch 106 is controlled by, for example, the signal processing circuit 301. The third switch 106 switches the connection state between the common terminal 160 and the plurality of selection terminals 161, 162 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The third switch 106 is, for example, a switch IC.

The output matching circuit 113 is provided in the signal path between the output terminal of the power amplifier 111 and the common terminal 150 of the second switch 105. The output matching circuit 113 is a circuit for achieving impedance matching between the power amplifier 111 and the transmission filters 112A and 112B. The output matching circuit 113 is composed of, for example, one inductor, but is not limited to this, and may include, for example, a plurality of inductors and a plurality of capacitors.

The input matching circuit 123 is provided in the signal path between the input terminal of the low noise amplifier 121 and the common terminal 160 of the third switch 106. The input matching circuit 123 is a circuit for impedance matching between the low noise amplifier 121 and the receiving filters 122A and 122B. The input matching circuit 123 is composed of, for example, one inductor, but is not limited to this, and may include, for example, a plurality of inductors and a plurality of capacitors.

The controller 115 is connected to the power amplifier 111. Further, the controller 115 is connected to the signal processing circuit 301 via the control terminal 84. The controller 115 controls the power amplifier 111 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301.

[High frequency module]
An example of the structure of the high frequency module 100 will be described with reference to FIGS. 2 to 4. FIG. 2 is a schematic cross-sectional view of an example of the high frequency module 100 according to the first embodiment of the present invention. FIG. 3 is a schematic plan view of an example of the filter 20 of the high frequency module 100 of FIG. FIG. 4 is a cross-sectional view of the filter 20 of FIG. 3 cut along the line AA. The X, Y, and Z directions in the figure indicate the vertical direction, the horizontal direction, and the height direction of the high frequency module 100, respectively.

As shown in FIG. 2, the high frequency module 100 includes a mounting substrate 10, a plurality of filters 20, a resin layer 30, a metal layer 40, and a plurality of solder bumps 50. The plurality of filters 20 are mounted on the mounting substrate 10 and covered with the resin layer 30. Further, a plurality of circuit elements 60 are arranged on the mounting substrate 10 and are covered with a resin layer 30. A metal layer 40 is arranged on the surface of the resin layer 30, and the metal layer 40 is connected to the ground. The plurality of filters 20 are ground-connected to the metal layer 40 via the plurality of solder bumps 50.

Hereinafter, the components of the high frequency module 100 will be described in detail.

<Mounting board>
The mounting board 10 has a first main surface PS1 and a second main surface PS2 facing each other in the thickness direction D1 of the mounting board 10. The mounting substrate 10 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are laminated in the thickness direction D1 of the mounting substrate 10. The plurality of conductive layers are formed in a predetermined pattern defined for each layer. Each of the plurality of conductive layers includes one or a plurality of conductor portions in one plane orthogonal to the thickness direction D1 of the mounting substrate 10. The material of each conductive layer is, for example, copper. The mounting substrate 10 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. The mounting substrate 10 is not limited to the LTCC substrate, and may be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate.

Further, the mounting board 10 is not limited to the LTCC board, and may be, for example, a wiring structure. The wiring structure is, for example, a multi-layer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. When there are a plurality of insulating layers, the plurality of insulating layers are formed in a predetermined pattern determined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. When there are a plurality of conductive layers, the plurality of conductive layers are formed in a predetermined pattern determined for each layer. The conductive layer may include one or more rewiring portions. In the wiring structure, the first surface of the two surfaces facing each other in the thickness direction of the multilayer structure is the first main surface PS1 of the mounting board 10, and the second surface is the second main surface PS2 of the mounting board 10. Is. The wiring structure may be, for example, an interposer. The interposer may be an interposer using a silicon substrate or a substrate composed of multiple layers.

The first main surface PS1 and the second main surface PS2 of the mounting board 10 are separated in the thickness direction D1 of the mounting board 10 and intersect with the thickness direction D1 of the mounting board 10. The first main surface PS1 in the mounting board 10 is, for example, orthogonal to the thickness direction D1 of the mounting board 10, but may include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. .. Further, the second main surface PS2 of the mounting board 10 is, for example, orthogonal to the thickness direction D1 of the mounting board 10, but includes, for example, a side surface of a conductor portion as a surface not orthogonal to the thickness direction D1. You may. Further, the first main surface PS1 and the second main surface PS2 of the mounting substrate 10 may have fine irregularities, concave portions or convex portions. The mounting board 10 has a rectangular shape in a plan view from the thickness direction D1 of the mounting board 10, but the mounting board 10 is not limited to this, and may be, for example, a square shape.

A plurality of electronic components are mounted on the mounting board 10. In the present specification and the like, "mounted" means that the electronic component is arranged on the mounting board 10 (mechanically connected) and that the electronic component is mounted on the mounting board 10 (appropriate conductor portion). ) And being electrically connected, including. In the high frequency module 100, a plurality of electronic components are arranged on the first main surface PS1 and the second main surface PS2 of the mounting substrate 10.

The plurality of electronic components include, for example, a circuit element 60 constituting a circuit in addition to the plurality of filters 20. The circuit element 60 may be a power amplifier 111, a low noise amplifier 121, or the like. Further, the circuit element 60 may include an element constituting a circuit such as an output matching circuit 113 and an input matching circuit 123. In the high frequency module 100, a plurality of filters 20 (a plurality of transmission filters 112A, 112B and a plurality of reception filters 122A, 122B), a power amplifier 111, an output matching circuit 113, a controller 115, and a plurality of filters 20 (a plurality of transmission filters 112A, 112B and a plurality of reception filters 122A, 122B) are placed on the first main surface PS1 of the mounting board 10. The input matching circuit 123 is mounted. Further, the first switch 104, the second switch 105, and the third switch 106 are mounted on the first main surface PS1 of the mounting board 10. A plurality of external connection terminals 80 and a low noise amplifier 121 are mounted on the second main surface PS2 of the mounting board 10. The mounting position of the circuit element 60 on the mounting board 10 is not limited to this.

In the high frequency module 100, a plurality of electronic components can be distributed and arranged on both sides of the mounting board 10. Therefore, the area of the mounting board 10 can be reduced as compared with the case where all the electronic components are arranged on one side, and the high frequency module 100 can be downsized. Further, the first switch 104, the second switch 105, and the third switch 106 for transmitting the high frequency transmission signal and the low noise amplifier 121 for transmitting the high frequency reception signal can be arranged on different main surfaces. Therefore, magnetic field coupling, electric field coupling, or electromagnetic field coupling between the first switch 104, the second switch 105, and the third switch 106 and the low noise amplifier 121 can be suppressed, and the isolation characteristics between the transmission circuit and the reception circuit can be improved. Can be done.

The power amplifier 111 is an IC chip including, for example, a substrate having a first surface and a second surface facing each other, and a circuit unit (IC unit) having a transistor formed on the first surface side of the substrate. .. The substrate is, for example, a gallium arsenide substrate. The circuit unit has a function of amplifying a transmission signal input to the input terminal of the power amplifier 111. The transistor is, for example, an HBT (Heterojunction Bipolar Transistor). The power amplifier 111 may include, for example, a capacitor for cutting DC. The IC chip including the power amplifier 111 is a flip chip on the first main surface PS1 of the mounting board 10 so that the first surface of the first surface and the second surface of the board is on the first main surface PS1 side of the mounting board 10. It has been implemented. For example, in a plan view from the thickness direction D1 of the mounting substrate 10, the outer peripheral shape of the IC chip including the power amplifier 111 is a quadrangular shape. The substrate in the IC chip including the power amplifier 111 is not limited to the gallium arsenide substrate, but may be a silicon substrate, a silicon germanium substrate, a gallium nitride substrate, or the like. Further, the transistor is not limited to a bipolar transistor such as an HBT, and may be, for example, a FET (Field Effect Transistor). The FET may be, for example, a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor).

The inductor in the output matching circuit 113 is, for example, a chip inductor. The inductor in the output matching circuit 113 is, for example, mounted on the first main surface PS1 of the mounting board 10, but is not limited to this. For example, the outer peripheral shape of the inductor is a quadrangular shape in a plan view from the thickness direction D1 of the mounting substrate 10.

The controller 115 includes, for example, a memory for storing a program and a processing circuit corresponding to a processor such as a CPU (Central Processing Unit). For example, in the controller 115, the processor executes a program stored in the memory.

The inductor in the input matching circuit 123 is, for example, a chip inductor. The inductor in the input matching circuit 123 is, for example, mounted on the first main surface PS1 of the mounting board 10, but is not limited to this. For example, the outer peripheral shape of the inductor is a quadrangular shape in a plan view from the thickness direction D1 of the mounting substrate 10.

Each of the first switch 104, the second switch 105, and the third switch 106 is a switch IC. More specifically, each of the first switch 104, the second switch 105, and the third switch 106 is formed, for example, on a substrate having first and second surfaces facing each other and on the first surface side of the substrate. It is an IC chip including a circuit unit (IC unit) having a FET (Field Effect Transistor). The substrate is, for example, a silicon substrate. The circuit unit is a functional unit having a function of switching a connection state between a common terminal and a plurality of selection terminals. For example, in a plan view from the thickness direction D1 of the mounting board 10, the outer peripheral shape of the IC chip constituting each of the first switch 104, the second switch 105, and the third switch 106 is a quadrangular shape. Each of the first switch 104, the second switch 105, and the third switch 106 has a mounting board 10 such that the first side of the first side and the second side of the board is on the first main surface PS1 side of the mounting board 10. The flip chip is mounted on the first main surface PS1 of the above.

The low noise amplifier 121 is an IC chip including, for example, a substrate having a first surface and a second surface facing each other, and a circuit unit (IC unit) formed on the first surface side of the substrate. The substrate is, for example, a silicon substrate. The circuit unit has a function of amplifying a received signal input to the input terminal of the low noise amplifier 121. The low noise amplifier 121 is flip-chip mounted on the second main surface PS2 of the mounting board 10 so that the first surface of the first surface and the second surface of the board is on the second main surface PS2 side of the mounting board 10. .. For example, the outer peripheral shape of the low noise amplifier 121 is a quadrangular shape in a plan view from the thickness direction D1 of the mounting substrate 10.

The plurality of external connection terminals 80 are arranged on the second main surface PS2 of the mounting board 10. The material of the plurality of external connection terminals 80 is, for example, a metal (for example, copper, a copper alloy, etc.). The plurality of external connection terminals 80 include an antenna terminal 81, a signal input terminal 82, a signal output terminal 83, and a control terminal 84. The antenna terminal 81 is connected to the antenna 310. The signal input terminal 82, the signal output terminal 83, and the control terminal 84 are connected to the signal processing circuit 301.

<Multiple filters>
The plurality of filters 20 are arranged on the first main surface PS1 side of the mounting board 10. The plurality of filters 20 have a plurality of transmission filters 112A and 112B and a plurality of reception filters 122A and 122B.

The filter 20 has a first filter surface PS3 arranged on the first main surface PS1 side of the mounting board 10, and a second filter surface PS4 facing the first filter surface PS3. The filter 20 has a plurality of first electrodes 21 and a plurality of second electrodes 22. The plurality of first electrodes 21 are provided on the PS3 side of the first filter surface and are connected to the mounting substrate 10. The plurality of second electrodes 22 are provided on the PS4 side of the second filter surface.

As shown in FIGS. 2 and 3, the plurality of first electrodes 21 have a receiving electrode Rx, a transmitting electrode Tx, an antenna electrode ANT, and a plurality of dummy electrodes Dm. The receiving electrode Rx is connected to the signal path R1 (R11, R12) for the received signal. The transmission electrode Tx is connected to the signal path T1 (T11, T12) for the transmission signal. The antenna electrode ANT is connected to the antenna 310 via the antenna terminal 81. The plurality of dummy electrodes Dm are electrodes used for fixing the filter 20 on the first main surface PS1 of the mounting substrate 10. The plurality of dummy electrodes Dm are not electrically connected to the mounting substrate 10. In the first embodiment, the number of the plurality of dummy electrodes Dm is three. The number of the plurality of dummy electrodes Dm is not limited to three.

The plurality of first electrodes 21 are arranged at equal intervals. In the first embodiment, the plurality of first electrodes 21 are arranged in 2 rows and 3 columns. Specifically, on the second filter surface PS4 of the filter 20, the dummy electrode Dm, the antenna electrode ANT, and the dummy electrode Dm are arranged in this order in the first row in the lateral direction (Y direction) of the filter 20, and the filter 20 is arranged. The receiving electrode Rx, the dummy electrode Dm, and the transmitting electrode Tx are arranged in this order on the second row in the lateral direction (Y direction). The arrangement of the plurality of first electrodes 21 is not limited to this.

In the first embodiment, the plurality of transmission filters 112A and 112B electrically connect the transmission electrode Tx to the signal path T1 (T11, T12), but connect the reception electrode Rx to the signal path R1 (R11, R12). Not electrically connected. Further, the plurality of receiving filters 122A and 122B electrically connect the receiving electrode Rx to the signal path R1 (R11, R12), but electrically connect the transmitting electrode Tx to the signal path T1 (T11, T12). Not done. The plurality of transmission filters 112A and 112B may not have the reception electrode Rx. The plurality of reception filters 122A and 122B may not have the transmission electrode Tx.

The plurality of second electrodes 22 are ground electrodes for connecting the ground of the filter 20. In the first embodiment, the plurality of second electrodes 22 are arranged at positions that do not overlap with the receiving electrode Rx and the transmitting electrode Tx in the height direction (Z direction) of the filter 20. That is, in the height direction (Z direction) of the filter 20, the plurality of second electrodes 22 are arranged at positions that do not face the receiving electrode Rx and the transmitting electrode Tx. In the height direction (Z direction) of the filter 20, the plurality of second electrodes 22 may be arranged at positions overlapping with the plurality of dummy electrodes Dm. Alternatively, in the height direction (Z direction) of the filter 20, the plurality of second electrodes 22 may be arranged at positions that do not overlap the plurality of first electrodes 21.

Further, as shown in FIG. 4, in the height direction (Z direction) of the plurality of filters 20, the plurality of second electrodes 22 are arranged at positions that do not overlap with the plurality of circuit electrodes 29 of the circuit unit 26.

The plurality of first electrodes 21 and the plurality of second electrodes 22 are made of a conductive material. For example, the plurality of first electrodes 21 and the plurality of second electrodes 22 are made of a metal such as copper. For example, when viewed from the height direction (Z direction) of the filter 20, the plurality of first electrodes 21 and the plurality of second electrodes 22 have a circular shape.

A plurality of solder bumps 50 are arranged on the plurality of second electrodes 22. The plurality of second electrodes 22 are connected to the metal layer 40 via the plurality of solder bumps 50.

The filter 20 is, for example, a ladder type filter, and has a plurality of (for example, four) series arm resonators and a plurality of (for example, three) parallel arm resonators. The filter 20 is, for example, an elastic wave filter. In the elastic wave filter, each of the plurality of series arm resonators and the plurality of parallel arm resonators is composed of elastic wave resonators. The surface acoustic wave filter is, for example, a surface acoustic wave filter that utilizes a surface acoustic wave.

In the surface acoustic wave filter, each of the plurality of series arm resonators and the plurality of parallel arm resonators is, for example, a SAW (Surface Acoustic Wave) resonator.

The filter 20 is, for example, a bare chip elastic wave filter. For example, the outer peripheral shape of the filter 20 is a quadrangular shape in a plan view from the thickness direction D1 of the mounting substrate 10. The filter 20 is flip-chip mounted on the first main surface PS1 of the mounting board 10.

As shown in FIG. 4, the filter 20 constituting the surface acoustic wave filter includes a substrate 23, a spacer layer 24, a cover member 25, a circuit unit 26, a plurality of third electrodes 27, and a plurality of via conductors 28. The circuit unit 26 has a plurality of circuit electrodes 29.

The substrate 23 is a piezoelectric substrate. The piezoelectric substrate is, for example, a lithium niobate substrate. The board 23 has a mounting surface PS5 on which the circuit elements of the circuit unit 26 are mounted on the side of the mounting board 10 facing the first main surface PS1. The second filter surface PS4 of the filter 20 is formed on the side of the substrate 23 facing the mounting surface PS5.

A spacer layer 24 and a cover member 25 are arranged on the mounting surface PS5 of the substrate 23. The spacer layer 24 surrounds a plurality of circuit electrodes 29 in a plan view from the thickness direction D1 of the mounting substrate 10. For example, the spacer layer 24 has a rectangular frame shape in a plan view from the thickness direction D1 of the mounting substrate 10. The spacer layer 24 has electrical insulation. For example, the material of the spacer layer 24 is an epoxy resin, polyimide, or the like.

The cover member 25 is arranged on the spacer layer 24 so as to face the substrate 23 in the thickness direction D1 of the mounting substrate 10. The cover member 25 overlaps with the plurality of circuit electrodes 29 in the thickness direction D1 of the mounting substrate 10 and is separated from the plurality of circuit electrodes 29 in the thickness direction D1 of the mounting substrate 10. For example, the cover member 25 has a flat plate shape. The cover member 25 has electrical insulation. For example, the material of the cover member 25 is an epoxy resin, polyimide, or the like. The first filter surface PS3 of the filter 20 is formed on the side of the cover member 25 opposite to the side in contact with the spacer layer 24. A plurality of first electrodes 21 of the filter 20 are arranged on the first filter surface PS3, and the plurality of first electrodes 21 are connected to the mounting substrate 10 via, for example, bumps 70.

The filter 20 has a space SP1 surrounded by a substrate 23, a spacer layer 24, and a cover member 25. The space SP1 contains a gas such as air or an inert gas (for example, nitrogen gas).

The circuit unit 26 has a plurality of circuit electrodes 29. The plurality of circuit electrodes 29 have a plurality of IDT (Interdigital Transducer) electrodes having a one-to-one correspondence with the plurality of series arm resonators, and a plurality of IDT electrodes having a one-to-one correspondence with the plurality of parallel arm resonators. ing.

The plurality of third electrodes 27 are formed on the mounting surface PS5 of the substrate 23 and are electrically connected to the circuit unit 26. The plurality of third electrodes 27 are covered with a spacer layer 24 on the mounting surface PS5 side of the substrate 23. For example, each of the plurality of third electrodes 27 is a pad electrode.

The plurality of via conductors 28 are formed inside the substrate 23, the spacer layer 24, and the cover member 25. The via conductor 28 formed inside the substrate 23 electrically connects the second electrode 22 and the third electrode 27. The via conductor 28 formed inside the spacer layer 24 and the cover member 25 electrically connects the first electrode 21 (reception electrode Rx) and the third electrode 27.

<Resin layer>
The resin layer 30 covers at least a part of each of a plurality of electronic components arranged on the first main surface PS1 of the mounting board 10 on the first main surface PS1 side of the mounting board 10. Further, the resin layer 30 covers at least a part of each of a plurality of electronic components arranged on the second main surface PS2 of the mounting board 10 on the second main surface PS2 side of the mounting board 10. In the first embodiment, the resin layer 30 covers a plurality of circuit elements 60 in addition to the plurality of filters 20. Specifically, the resin layer 30 includes a plurality of transmission filters 112A and 112B, a plurality of reception filters 122A and 122B, a power amplifier 111, an output matching circuit 113, a controller 115 and an input on the first main surface PS1 side of the mounting board 10. It covers the matching circuit 123. The resin layer 30 covers a plurality of external connection terminals 80 and a low noise amplifier 121 on the second main surface PS2 side of the mounting substrate 10.

The resin layer 30 is arranged on the first main surface PS1 of the mounting substrate 10 and covers the first main surface PS1 and the electronic components on the first main surface PS1. The resin layer 30 has a function of ensuring reliability such as mechanical strength and moisture resistance of electronic components on the first main surface PS1.

The resin layer 30 is block-shaped. On the first main surface PS1 side of the mounting substrate 10, the resin layer 30 includes a first resin surface 31 in contact with the first main surface PS1 of the mounting substrate 10, and a second resin surface 32 facing the first resin surface 31. Has. The second resin surface 32 is a flat surface. A plurality of solder bumps 50 are exposed on the second resin surface 32. Specifically, the connection surface 51 of the plurality of solder bumps 50 is exposed on the second resin surface 32. The second resin surface 32 and the connecting surface 51 form a continuous flat surface.

On the second main surface PS2 side of the mounting substrate 10, the resin layer 30 includes a third resin surface 33 in contact with the second main surface PS2 of the mounting substrate 10, and a fourth resin surface 34 facing the third resin surface 33. Has. The fourth resin surface 34 is a flat surface. A plurality of external connection terminals 80 are exposed on the fourth resin surface 34.

The resin layer 30 contains a resin. The resin layer 30 may contain a filler in addition to the resin.

<Metal layer>
The metal layer 40 covers the surface of the resin layer 30. The metal layer 40 covers at least the second resin surface 32 of the resin layer 30. In the first embodiment, the metal layer 40 covers the surface of the resin layer 30 except for the fourth resin surface 34 of the resin layer 30. That is, the metal layer 40 covers the second resin surface 32 of the resin layer 30 and the resin side surface connecting the second resin surface 32 and the fourth resin surface 34. The metal layer 40 can be used as an electromagnetic shield inside and outside the high frequency module 100.

The metal layer 40 is connected to the ground. The metal layer 40 is connected to at least a part of the ground pattern of the mounting substrate 10. Thereby, the potential of the metal layer 40 can be made the same as the potential of the ground pattern. Alternatively, the metal layer 40 may be connected to the ground of the substrate on which the high frequency module 100 is mounted. In the first embodiment, the metal layer 40 is arranged on the side surface of the mounting board 10 and is connected to the ground pattern of the mounting board 10. In this way, the metal layer 40 is set to the ground potential.

The metal layer 40 is, for example, a metal thin film formed by a sputtering method, and is formed so as to cover the second resin surface 32 and the resin side surface of the resin layer 30, and the side surface of the mounting substrate 10. The metal layer 40 is set to the ground potential and suppresses external noise from entering the circuit components constituting the high frequency module 100.

The material of the metal layer 40 includes, for example, one or more kinds of metals. In the first embodiment, the metal layer 40 includes a first layer, a second layer, and a third layer. The first layer, the second layer and the third layer are a first SUS layer, a Cu layer and a second SUS layer, respectively. Each material of the first SUS layer and the second SUS layer is an alloy containing Fe, Ni, and Cr. The material of the Cu layer contains Cu. In the metal layer 40, the resistivity of the second layer of the first layer, the second layer, and the third layer is lower than the resistivity of each of the first layer and the third layer. The first layer is a material having better adhesion to the resin layer 30 than the second layer. The material of the third layer is a material having better oxidation resistance than the second layer. Further, in the metal layer 40, the thickness of the second layer is thicker than that of the first layer and the third layer, respectively. The first layer, the second layer and the third layer may be the first Ti layer, the Cu layer and the second Ti layer, respectively. Further, the first layer, the second layer and the third layer may be the first Ti layer, the Au layer and the second Ti layer, respectively.

<Multiple solder bumps>
The plurality of solder bumps 50 are arranged on the plurality of second electrodes 22, and connect the plurality of second electrodes 22 and the metal layer 40. In the present specification and the like, "connecting" means that a plurality of solder bumps 50 electrically connect a plurality of second electrodes 22 and a metal layer, and a plurality of solder bumps 50 are connected to a plurality of second electrodes 22. Includes physically joining with the metal layer. The plurality of second electrodes 22 are ground electrodes, and the metal layer 40 is connected to the ground. Therefore, by electrically connecting the plurality of second electrodes 22 of the filter 20 to the metal layer 40 via the plurality of solder bumps 50, the ground of the filter 20 can be easily secured.

The solder bump 50 has a substantially ball shape. Further, the solder bump 50 has a connection surface 51 connected to the metal layer 40. The connection surface 51 is a surface exposed from the resin layer 30 that covers the filter 20. In the solder bump 50, the connection surface 51 is formed on the side opposite to the side connected to the second electrode 22. In the first embodiment, the connection surface 51 has irregularities. The connecting surface 51 may not have an uneven surface and may be formed flat. The material of the solder bump 50 may be, for example, Sn-Ag-Cu.

As shown in FIGS. 3 and 4, the plurality of solder bumps 50 are arranged at positions that do not overlap with the receiving electrode Rx and the transmitting electrode Tx in the height direction (Z direction) of the filter 20. That is, the plurality of solder bumps 50 are arranged at positions that do not face the receiving electrode Rx and the transmitting electrode Tx in the height direction (Z direction) of the filter 20. As a result, it is possible to suppress the occurrence of parasitic capacitance between the plurality of solder bumps 50 and the receiving electrode Rx and the transmitting electrode Tx. The high frequency module 100 configured in this way is particularly advantageous in suppressing parasitic capacitance as compared with the case where the ground electrode is formed so as to cover the second filter surface PS4 of the filter 20. Further, the plurality of solder bumps 50 are arranged at positions that do not overlap with the plurality of circuit electrodes 29 in the height direction (Z direction) of the plurality of filters 20. As a result, it is possible to suppress the occurrence of parasitic capacitance between the plurality of solder bumps 50 and the plurality of circuit electrodes 29.

[Manufacturing method of high frequency module]
Next, an example of a method for manufacturing the high frequency module 100 will be described with reference to FIGS. 5 and 6A to 6D. FIG. 5 is an exemplary flowchart of the method for manufacturing the high frequency module 100 according to the first embodiment of the present invention. 6A to 6D are schematic views showing an example of a process of a manufacturing method of the high frequency module 100.

As shown in FIG. 5, the method for manufacturing the high frequency module 100 includes steps ST1 to ST4. In addition, steps ST1 to ST4 are carried out by a manufacturing system. The manufacturing system includes, for example, a mounting device, a resin layer forming device, a cutting device, and a metal layer forming device. The mounting device is a device for mounting electronic components on the mounting board 10. The resin layer forming apparatus is an apparatus for forming the resin layer 30 on the mounting substrate 10. The cutting device is a device that cuts the resin layer 30. The metal layer forming apparatus is an apparatus for forming a metal layer 40 on the surface of the resin layer 30. The components of the manufacturing system are examples and are not limited thereto.

As shown in FIGS. 5 and 6A, in step ST1, the mounting device arranges electronic components on the mounting board 10. Specifically, the mounting device arranges a plurality of filters 20 on the first main surface PS1 of the mounting board 10. Further, the mounting device arranges a plurality of circuit elements 60 on the first main surface PS1 and the second main surface PS2 of the mounting board 10.

Further, in step ST1, the mounting device forms a plurality of solder bumps 50 having a substantially ball shape on the plurality of second electrodes 22 provided on the second filter surface PS4 of the filter 20. Further, the mounting device has a plurality of solder bumps 50 on the plurality of second electrodes 22 so that the total height H1 of the filter 20 including the plurality of solder bumps 50 is higher than the heights of the other plurality of circuit elements 60. To form. The total height H1 of the filter 20 is the height from the first main surface PS1 of the mounting substrate 10 to the vertices of the plurality of solder bumps 50. When the heights of the plurality of solder bumps 50 vary, the distance between the lowest apex of the solder bumps 50 and the first main surface PS1 of the mounting board 10 is the total height H1 of the filter 20.

As shown in FIGS. 5 and 6B, in step ST2, the resin layer forming apparatus forms the resin layer 30 on the mounting substrate 10 on which the electronic components are arranged. Specifically, the resin layer forming apparatus forms the resin layer 30 so as to cover the electronic components on both the first main surface PS1 side and the second main surface PS2 side of the mounting substrate 10.

Further, in the resin layer forming apparatus, the mounting substrate 10 is such that the first height H2 of the resin layer 30 formed on the first main surface PS1 side of the mounting substrate 10 is higher than the overall height H1 of the filter 20. The resin layer 30 is formed on the PS1 side of the first main surface of the above. The first height H2 of the resin layer 30 is the distance from the first resin surface 31 in contact with the first main surface PS1 of the mounting substrate 10 to the second resin surface 32.

As shown in FIGS. 5 and 6C, in step ST3, the cutting device cuts the resin layer 30 and the solder bump 50. Specifically, in step ST3, the cutting apparatus cuts the second resin surface 32 of the resin layer 30 arranged on the first main surface PS1 side of the mounting substrate 10 to obtain the first height of the resin layer 30. H2 is reduced to the second height H3. The second height H3 of the resin layer 30 after cutting is the distance from the first resin surface 31 in contact with the first main surface PS1 of the mounting substrate 10 after cutting to the second resin surface 32. The second height H3 of the resin layer 30 after cutting is smaller than the overall height H1 of the filter 20 before cutting. Further, the second height H3 of the resin layer 30 after cutting is larger than the heights H4 and H5 of the plurality of circuit elements 60.

In this way, the cutting device cuts the second resin surface 32 of the resin layer 30 to reduce the height of the resin layer 30 to expose the solder bumps 50 from the resin layer 30. By cutting the solder bump 50 together with the resin layer 30, a flat connection surface 51 is formed on the upper surface of the solder bump 50. The connecting surface 51 is exposed from the resin layer 30 and forms a surface continuous with the second resin surface 32 of the resin layer 30.

As shown in FIGS. 5 and 6D, the metal layer forming apparatus forms the metal layer 40 on the surface of the resin layer 30. Specifically, the metal layer forming apparatus forms the metal layer 40 on the second resin surface 32 and the resin side surface of the resin layer 30. For example, the metal layer 40 is formed by a sputtering method, a vapor deposition method, or a printing method.

As described above, in the method for manufacturing the high frequency module 100, the high frequency module 100 can be manufactured by carrying out steps ST1 to ST4.

[effect]
According to the high frequency module 100 and the communication device 300 according to the first embodiment, the following effects can be obtained.

The high frequency module 100 includes a mounting substrate 10, a plurality of filters 20, a resin layer 30, a metal layer 40, and a plurality of solder bumps 50. The mounting board 10 has a first main surface PS1 and a second main surface PS2 facing each other. The plurality of filters 20 are arranged on the first main surface PS1 of the mounting board 10. The resin layer 30 is arranged on the first main surface PS1 of the mounting substrate 10 and covers at least a part of the plurality of filters 20. The metal layer 40 covers the surface of the resin layer 30 and is connected to the ground. The plurality of solder bumps 50 connect the plurality of filters 20 and the metal layer 40. Each of the plurality of filters 20 has a first filter surface PS3 arranged on the first main surface PS1 side of the mounting board 10, and a second filter surface PS4 facing the first filter surface PS3. Each of the plurality of filters 20 has a plurality of first electrodes 21 and a plurality of second electrodes 22. The plurality of first electrodes 21 are provided on the PS3 side of the first filter surface and are connected to the mounting substrate 10. The plurality of second electrodes 22 are electrodes for ground connection provided on the second filter surface PS4 side. The plurality of solder bumps 50 are arranged on the plurality of second electrodes 22, and connect the plurality of second electrodes 22 and the metal layer 40.

With such a configuration, it is possible to sufficiently secure the ground of a plurality of filters 20 which are electronic components. Specifically, the filter 20 has a plurality of second electrodes 22 for ground connection on the second filter surface PS4 facing the first filter surface PS3 arranged on the first main surface PS1 side of the mounting board 10. is doing. The plurality of second electrodes 22 and the metal layer 40 are electrically connected via the plurality of solder bumps 50. As described above, in the high frequency module 100, the metal layer 40 arranged above the plurality of second electrodes 22 can be electrically connected to the metal layer 40 via the plurality of solder bumps 50, so that the ground of the filter 20 can be sufficiently secured. .. It should be noted that "sufficient grounding can be secured" as long as the electronic components are grounded. For example, "sufficient ground can be secured" means that the ground electrode of the electronic component is electrically connected to the ground. In the first embodiment, the second electrode 22 of the filter 20 may be electrically connected to the metal layer 40 via the solder bump 50.

Further, since the ground of the filter 20 does not have to be connected to the ground pattern of the mounting board 10, it is not necessary to route the wiring pattern for the ground connection of the filter 20.

Further, since the space above the filter 20 can be effectively used for ground connection, the number of elements arranged on the first main surface PS1 of the mounting board 10 can be reduced. This makes it possible to reduce the size of the high frequency module 100.

Further, since the heat of the filter 20 is transferred to the metal layer 40 via the solder bump 50, the heat dissipation of the filter 20 can be improved. This makes it possible to stabilize the temperature characteristics of the filter 20.

The plurality of solder bumps 50 have a connection surface 51 exposed from the resin layer 30 and connected to the metal layer 40. With such a configuration, the contact between the plurality of solder bumps 50 and the metal layer 40 becomes easy, and it becomes easier to secure the ground of the filter 20. Further, since the contact area between the plurality of solder bumps 50 and the metal layer 40 can be increased, the heat transfer efficiency between the plurality of solder bumps 50 and the metal layer 40 can be improved. This makes it possible to further improve the heat dissipation of the filter 20. Further, when the connecting surface 51 is formed by cutting the solder bump 50, unevenness is formed on the connecting surface 51. When the metal layer 40 is a metal thin film formed by, for example, a sputtering method, the contact area between the connection surface 51 and the metal layer 40 can be increased due to the unevenness of the connection surface 51. Therefore, it is possible to increase the contact area between the connection surface 51 and the metal layer 40 and improve the heat dissipation by forming the connection surface 51 having irregularities by cutting, as compared with the case of simply forming the connection surface. ..

The plurality of first electrodes 21 are a receiving electrode Rx connected to a signal path R1 (R11, R12) for receiving signals and a transmitting electrode Tx connected to a signal path T1 (T11, T12) for transmitting signals. Includes at least one of them. In the height direction (Z direction) of the plurality of filters 20, the plurality of solder bumps 50 are arranged at positions that do not overlap with the receiving electrode Rx and the transmitting electrode Tx. With such a configuration, it is possible to suppress the occurrence of parasitic capacitance between the plurality of solder bumps 50 and the receiving electrode Rx and the transmitting electrode Tx.

The plurality of filters 20 are elastic wave filters having a plurality of circuit electrodes 29, and the plurality of solder bumps 50 are located at positions where the plurality of solder bumps 50 do not overlap with the plurality of circuit electrodes 29 in the height direction (Z direction) of the plurality of filters 20. Have been placed. With such a configuration, it is possible to suppress the occurrence of parasitic capacitance between the plurality of solder bumps 50 and the plurality of circuit electrodes 29.

The plurality of filters 20 have a plurality of transmission filters 112A and 112B provided in the signal path T1 (T11, T12) for the transmission signal. With such a configuration, it is possible to easily secure the ground of the plurality of transmission filters 112A and 112B, and it is possible to improve the heat dissipation. Generally, the transmission power tends to be larger than the reception power. Since the plurality of filters 20 generate heat when a signal flows through the resistance component, the amount of heat generated increases as the power of the signal increases. Therefore, the plurality of transmission filters 112A and 112B tend to generate heat more easily than the plurality of reception filters 122A and 122B. In the high frequency module 100, a plurality of transmission filters 112A and 112B are connected to the metal layer 40 via a plurality of solder bumps 50. As a result, the heat generated by the plurality of transmission filters 112A and 112B is transferred to the metal layer 40 via the plurality of solder bumps 50 and dissipated. As a result, it is possible to stabilize the temperature characteristics of the plurality of transmission filters 112A and 112B.

The plurality of filters 20 have a plurality of reception filters 122A and 122B provided in the signal path R1 (R11, R12) for the reception signal. With such a configuration, the ground of a plurality of reception filters 122A and 122B can be easily secured. Further, the electrical characteristics of the plurality of receiving filters 122A and 122B can be improved. In the high frequency module 100, the plurality of receiving filters 122A and 122B are electrically connected to the metal layer 40 via the plurality of solder bumps 50. As a result, the high frequency module 100 has a plurality of reception filters 122A and 122B, as compared with a conventional configuration in which a plurality of reception filters 122A and 122B are electrically connected to the ground pattern of the mounting board 10 via bumps and wiring patterns. And the electrical path to the ground can be shortened. Sufficient attenuation can be obtained by shortening the electrical path to the plurality of receive filters 122A and 122B and the ground. Further, in the conventional configuration, there is a concern that noise may be added to the routed wiring pattern and unnecessary signals may flow to the plurality of reception filters 122A and 122B instead of the ground. In the high frequency module 100, the electric paths to the plurality of reception filters 122A and 122B and the ground can be shortened as compared with the conventional configuration, so that unnecessary signals can be reduced.

The resin layer 30 has a first resin surface 31 in contact with the first main surface PS1 and a second resin surface 32 facing the first resin surface 31 on the first main surface PS1 side of the mounting substrate 10. The metal layer 40 is arranged on the second resin surface 32. With such a configuration, since the metal layer 40 is arranged above the filter 20, it becomes easier to connect the plurality of second electrodes 22 and the metal layer 40 by the plurality of solder bumps 50. As a result, the ground of the plurality of filters 20 can be secured more easily.

The metal layer 40 is formed of a metal film. With such a configuration, it is possible to reduce the size of the high frequency module 100 while increasing the surface area of the metal layer 40 formed on the surface of the resin layer 30.

The high frequency module 100 further includes a circuit element 60 arranged on the first main surface PS1 side of the mounting board 10 and covered with a resin layer 30. Even in such a configuration, the ground of the plurality of filters 20 can be easily secured.

The high frequency module 100 further includes an external connection terminal 80 arranged on the second main surface PS2 of the mounting board 10. Even in such a configuration, the ground of the plurality of filters 20 can be easily secured.

The high frequency module 100 further includes a circuit element 60 arranged on the second main surface PS2 side of the mounting board 10. With such a configuration, the grounds of the plurality of filters 20 can be easily secured even in a configuration in which the circuit element 60 is arranged on the second main surface PS2 side of the mounting board 10. When the circuit element 60 is not arranged on the second main surface PS2 side of the mounting board 10, it is easy to form a ground pattern on the second main surface PS2 side. When the circuit element 60 is arranged on the second main surface PS2 side, the space for forming the ground pattern on the second main surface PS2 side is reduced. In the high frequency module 100, the filter 20 can be ground-connected to the metal layer 40 even when the circuit element 60 is arranged on the second main surface PS2 side of the mounting substrate 10. Therefore, the ground of the plurality of filters 20 can be easily secured.

The communication device 300 includes a high-frequency module 100 and a signal processing circuit 301 that is connected to the high-frequency module 100 and processes high-frequency signals. With such a configuration, it is possible to easily secure the ground of a plurality of filters 20 which are electronic components.

Note that the first embodiment describes an example of the circuit configuration of the high frequency module 100 and the communication device 300, and is not limited to the above-mentioned example. The high-frequency module 100 may have, for example, a high-frequency front-end circuit compatible with MIMO (Multi Input Multi Output) as a circuit configuration.

In the first embodiment, an example in which the filter 20 is a ladder type filter has been described, but the present invention is not limited to this. For example, the filter 20 may be a longitudinally coupled resonator type surface acoustic wave filter.

In the first embodiment, an example in which the filter 20 is a surface acoustic wave filter using a surface acoustic wave has been described, but the present invention is not limited to this. For example, the filter 20 may be an elastic wave filter that utilizes bulk elastic waves, elastic boundary waves, plate waves, and the like. Alternatively, the filter 20 may be a laminated LC filter or a multilayer LC filter.

In the first embodiment, an example in which the high frequency module 100 includes a plurality of filters 20 has been described, but the present invention is not limited to this. The high frequency module 100 may include one or more filters 20. For example, the high frequency module 100 may include one or more transmit filters and may not include receive filters. Alternatively, the high frequency module 100 may include one or more receive filters and may not include transmit filters.

In the first embodiment, an example in which the filter 20 has a plurality of second electrodes 22 has been described, but the present invention is not limited to this. The filter 20 may have one or more second electrodes 22.

In the first embodiment, an example in which the plurality of first electrodes 21 have a receiving electrode Rx, a transmitting electrode Tx, an antenna electrode ANT, and a plurality of dummy electrodes Dm has been described, but the present invention is not limited thereto. For example, when the filter 20 is a transmission filter, the plurality of first electrodes 21 may have a transmission electrode Tx and an antenna electrode ANT. When the filter 20 is a reception filter, the plurality of first electrodes 21 may have a reception electrode Rx and an antenna electrode ANT. Further, the plurality of first electrodes 21 do not have to have the dummy electrode Dm.

In the first embodiment, an example in which the filter 20 has a plurality of solder bumps 50 has been described, but the present invention is not limited to this. The filter 20 may have one or more solder bumps 50.

In the first embodiment, an example will be described in which a plurality of second electrodes 22 and a plurality of solder bumps 50 are arranged at positions that do not overlap with the receiving electrode Rx and the transmitting electrode Tx in the height direction (Z direction) of the filter 20. However, it is not limited to this. Further, the example in which the plurality of second electrodes 22 and the plurality of solder bumps 50 are arranged at positions that do not overlap with the plurality of circuit electrodes 29 in the height direction (Z direction) of the plurality of filters 20 has been described. Not limited to this. The plurality of second electrodes 22 and the plurality of solder bumps 50 may be arranged on the second filter surface PS4 of the filter 20.

In the first embodiment, an example in which the solder bump 50 has a substantially ball shape has been described, but the present invention is not limited to this. For example, the solder bump 50 may have a substantially elliptical shape when viewed from the height direction (Z direction) of the filter 20.

In the first embodiment, an example in which the metal layer 40 is arranged on the second resin surface 32 and the resin side surface of the resin layer 30 has been described, but the present invention is not limited to this. The metal layer 40 may be arranged on the second resin surface of the resin layer 30. The metal layer 40 may not be arranged on the resin side surface of the resin layer 30.

In the first embodiment, an example in which the circuit element 60 is arranged on the second main surface PS2 side of the mounting board 10 has been described, but the present invention is not limited to this. For example, the circuit element 60 may not be arranged on the second main surface PS2 side of the mounting board 10.

In the first embodiment, an example in which the resin layer 30 is arranged on the second main surface PS2 side of the mounting substrate 10 has been described, but the present invention is not limited to this. For example, the resin layer 30 may not be arranged on the second main surface PS2 side of the mounting substrate 10.

In the first embodiment, an example in which the manufacturing method of the high frequency module 100 includes steps ST1 to ST4 has been described, but the present invention is not limited to this. For example, the method of manufacturing the high frequency module 100 may include additional steps. Alternatively, these steps may be integrated and / or split.

[Modification 1]
FIG. 7 is a schematic cross-sectional view of the high frequency module 100A of Modification 1. As shown in FIG. 7, the high frequency module 100A includes one filter 20. In the high frequency module 100A, the filter 20 is a transmission filter 112A. Even in such a configuration, the ground of the plurality of filters 20 can be easily secured.

In the first modification, the example in which the filter 20 of the high frequency module 100A is the transmission filter 112A has been described, but the present invention is not limited to this. For example, the filter 20 of the high frequency module 100A may be the reception filter 122A.

[Modification 2]
FIG. 8 is a schematic cross-sectional view of the high frequency module 100B of Modification 2. As shown in FIG. 8, in the high frequency module 100B, the second main surface PS2 of the mounting substrate 10 is exposed. Specifically, the resin layer 30 is not arranged on the second main surface PS2 side of the mounting board 10, but the external connection terminal 80 is arranged. Further, the circuit element 60 such as the low noise amplifier 121 is not arranged on the second main surface PS2 side of the mounting board 10. Even in such a configuration, the ground of the plurality of filters 20 can be easily secured.

[Modification 3]
FIG. 9 is a schematic cross-sectional view of the high frequency module 100C of Modification 3. FIG. 10 is a schematic plan view of an example of the filter 20A of the high frequency module 100C of FIG. As shown in FIGS. 9 and 10, in the filter 20A of the high frequency module 100C, the second electrode 22A and the solder bump 50A have a longitudinal direction (Y direction) when viewed from the height direction (Z direction) of the filter 20A. The second electrode 22A and the solder bump 50A are arranged at positions that do not overlap with the plurality of first electrodes 21 in the height direction (Z direction) of the filter 20A. Specifically, the second electrode 22A and the solder bump 50A are arranged in the center when viewed from the height direction (Z direction) of the filter 20A.

The solder bump 50A has a connection surface 51A having a longitudinal direction (Y direction). The connection surface 51A can take a larger area than the connection surface 51 of the first embodiment. With such a configuration, the contact area between the solder bump 50 and the metal layer 40 can be increased, so that the stability of the connection between the solder bump 50 and the metal layer 40 can be improved. Moreover, the heat dissipation can be further improved.

(Embodiment 2)
The high frequency module of the second embodiment which concerns on this invention will be described.

The second embodiment mainly describes the differences from the first embodiment. In the second embodiment, the same or equivalent configurations as those in the first embodiment will be described with the same reference numerals. Further, in the second embodiment, the description overlapping with the first embodiment is omitted.

In the second embodiment, a plurality of filters include a first filter and a second filter having different heights, and the height of the first solder bump of the first filter and the height of the second solder bump of the second filter are different. In that respect, it differs from the first embodiment.

FIG. 11 is a schematic cross-sectional view of an example of the high frequency module 100D according to the second embodiment of the present invention. As shown in FIG. 11, in the high frequency module 100D, the plurality of filters 20 have a first filter 20B and a second filter 20C. The first height H11 of the first filter 20B is different from the second height H12 of the second filter 20C. Specifically, the second height H12 of the second filter 20C is larger than the first height H11 of the first filter 20B.

The plurality of solder bumps 50 include a plurality of first solder bumps 50B arranged on the second filter surface PS4 of the first filter 20B and a plurality of second solder bumps arranged on the second filter surface PS4 of the second filter 20C. It has 50C and. The third height H13 of the plurality of first solder bumps 50B is different from the fourth height H14 of the plurality of second solder bumps 50C. Specifically, the third height H13 of the plurality of first solder bumps 50B is smaller than the fourth height H14 of the plurality of second solder bumps 50C.

In the second embodiment, the heights H15 and H16 of the plurality of circuit elements 60 arranged on the first main surface PS1 side of the mounting board 10 are the first heights H11 of the first filter 20B and the second filter 20C. 2 Height is larger than H12. That is, the first height H11 of the first filter 20B and the second height H12 of the second filter 20C are smaller than the heights H15 and H16 of the plurality of circuit elements 60. Further, the overall height "H11 + H13" of the first filter 20B including the first solder bump 50B is larger than the heights H15 and H16 of the plurality of circuit elements 60. The overall height "H12 + H14" of the second filter 20C including the second solder bump 50C is larger than the heights H15 and H16 of the plurality of circuit elements 60. The total height "H11 + H13" of the first filter 20B including the first solder bump 50B is the total of the first height H11 of the first filter 20B and the third height H13 of the first solder bump 50B. It means the distance from the first main surface PS1 of the mounting board 10 to the vertices of the plurality of first solder bumps 50B. The overall height "H12 + H14" of the second filter 20C including the second solder bump 50C is the total of the second height H12 of the second filter 20C and the fourth height H14 of the second solder bump 50C. It means the distance from the first main surface PS1 of the mounting board 10 to the vertices of the plurality of second solder bumps 50C.

In the present specification, the first height H11, the second height H12, the third height H13, and the fourth height H14 are the height H11, the height H12, the height H13, and the height H14, respectively. It may be called.

[effect]
According to the high frequency module 100D according to the second embodiment, the following effects can be obtained.

In the high frequency module 100D, the plurality of filters 20 include a first filter 20B and a second filter 20C. The first height H11 of the first filter 20B is different from the second height H12 of the second filter 20C. The plurality of solder bumps 50 include a plurality of first solder bumps 50B arranged on the second filter surface PS4 of the first filter 20B and a plurality of second solder bumps arranged on the second filter surface PS4 of the second filter 20C. It has 50C and. The third height H13 of the plurality of first solder bumps 50B is different from the fourth height H14 of the plurality of second solder bumps 50C.

With such a configuration, even in the high frequency module 100C having a plurality of filters 20B and 20C having different heights, the ground of the plurality of filters 20B and 20C can be easily secured.

The heights H11 and H12 of the plurality of filters 20 (20B and 20C) are smaller than the heights H15 and H16 of the plurality of circuit elements 60 arranged on the first main surface PS1 side of the mounting board 10, and a plurality of solder bumps. The overall height "H13 + H14" of the plurality of filters 20 (20B, 20C) including 50 is larger than the heights H15 and H16 of the plurality of circuit elements 60. With such a configuration, even if the heights H11 and H12 of the plurality of filters 20 are smaller than the heights H15 and H16 of the other plurality of circuit elements 60, the plurality of solder bumps 50 (50B and 50C) Can be easily secured for the grounds of the plurality of filters 20.

In the second embodiment, an example in which the plurality of solder bumps 50 have a plurality of first solder bumps 50B and a plurality of second solder bumps 50C has been described, but the present invention is not limited thereto. The plurality of solder bumps 50 may have one or more first solder bumps 50B and one or more second solder bumps 50C.

In the second embodiment, the heights H15 and H16 of the plurality of circuit elements 60 arranged on the first main surface PS1 side of the mounting board 10 are the first heights H11 of the first filter 20B and the second filter 20C. 2 An example having a height larger than H12 has been described, but the present invention is not limited to this. For example, the first height H11 of the first filter 20B and the second height H12 of the second filter 20C may be larger than the heights H15 and H16 of the plurality of circuit elements 60.

Although the present invention has been fully described in connection with preferred embodiments with reference to the accompanying drawings, various modifications and modifications are obvious to those skilled in the art. It should be understood that such modifications and modifications are included within the scope of the invention as long as it does not deviate from the scope of the invention according to the appended claims.

The high frequency module of the present invention can be applied to communication devices and the like.

10 Mounting board 20, 20A, 20B, 20C Filter 21 1st electrode 22 2nd electrode 23 Board 24 Spacer layer 25 Cover member 26 Circuit part 27 3rd electrode 28 Via conductor 29 Circuit electrode 30 Resin layer 31 1st resin surface 32 No. 2 Resin surface 33 3rd resin surface 34 4th resin surface 40 Metal layer 50, 50A, 50B, 50C Solder bump 51, 51A Connection surface 60 Circuit element 70 Bump 80 External connection terminal 81 Antenna terminal 82 Signal input terminal 83 Signal output terminal 84 Control terminal 100, 100A, 100B, 100C, 100D High frequency module 104 1st switch 140 Common terminal 141,142 Selection terminal 105 2nd switch 150 Common terminal 151,152 Selection terminal 106 3rd switch 160 Common terminal 161, 162 Selection terminal 111 Power Amplifier 112A, 112B Transmission Filter 113 Output Matching Circuit 115 Controller 121 Low Noise Amplifier 122A, 122B Receive Filter 123 Input Matching Circuit 300 Communication Device 301 Signal Processing Circuit 302 RF Signal Processing Circuit 303 Baseband Signal Processing Circuit 310 Antennas H1, H2 H3, H4, H5, H11, H12, H13, H14, H15, H16 Height PS1 1st main surface PS2 2nd main surface PS3 1st filter surface PS4 2nd filter surface PS5 mounting surface

Claims (15)

1. A mounting board having a first main surface and a second main surface facing each other,
   A filter arranged on the first main surface of the mounting board and
   A resin layer arranged on the first main surface of the mounting substrate and covering at least a part of the filter.
   A metal layer that covers the surface of the resin layer and is connected to the ground,
   A solder bump that connects the filter and the metal layer,
   Equipped with
   The filter has a first filter surface arranged on the first main surface side of the mounting board and a second filter surface facing the first filter surface.
   The filter is
   A plurality of first electrodes provided on the first filter surface side and connected to the mounting substrate, and
   The second electrode for ground connection provided on the second filter surface side and
   Have,
   The solder bump is arranged on the second electrode and connects the second electrode and the metal layer.
   High frequency module.
2. The solder bump has a connecting surface that is exposed from the resin layer and is connected to the metal layer.
   The high frequency module according to claim 1.
3. The plurality of first electrodes include at least one of a receiving electrode connected to a signal path for a received signal and a transmitting electrode connected to a signal path for a transmitted signal.
   In the height direction of the filter, the solder bumps are arranged at positions that do not overlap with the receiving electrode and the transmitting electrode.
   The high frequency module according to claim 1 or 2.
4. The filter is an elastic wave filter having circuit electrodes.
   The solder bumps are arranged at positions that do not overlap with the circuit electrodes in the height direction of the filter.
   The high frequency module according to any one of claims 1 to 3.
5. The filter has a transmission filter provided in the signal path for the transmission signal.
   The high frequency module according to any one of claims 1 to 4.
6. The filter has a receive filter provided in the signal path for the receive signal.
   The high frequency module according to any one of claims 1 to 5.
7. With multiple of the above filters
   With multiple solder bumps
   The plurality of filters include a first filter and a second filter.
   The first height of the first filter is different from the second height of the second filter.
   The plurality of solder bumps include a first solder bump arranged on the second filter surface of the first filter and a second solder bump arranged on the second filter surface of the second filter. ,
   The third height of the first solder bump is different from the fourth height of the second solder bump.
   The high frequency module according to any one of claims 1 to 6.
8. The resin layer has a first resin surface in contact with the first main surface and a second resin surface facing the first resin surface on the first main surface side of the mounting substrate.
   The metal layer is arranged on the second resin surface.
   The high frequency module according to any one of claims 1 to 7.
9. The metal layer is formed of a metal film,
   The high frequency module according to any one of claims 1 to 8.
10. Further comprising a circuit element arranged on the first main surface side of the mounting substrate and covered with the resin layer.
    The high frequency module according to any one of claims 1 to 9.
11. The height of the filter is smaller than the height of the circuit element,
    The total height of the filter including the solder bumps is larger than the height of the circuit element.
    The high frequency module according to claim 10.
12. Further comprising an external connection terminal arranged on the second main surface of the mounting board.
    The high frequency module according to any one of claims 1 to 11.
13. The second main surface of the mounting board is exposed.
    The high frequency module according to any one of claims 1 to 12.
14. Further, a circuit element arranged on the second main surface side of the mounting board is provided.
    The high frequency module according to any one of claims 1 to 12.
15. The high frequency module according to any one of claims 1 to 14,
    A signal processing circuit connected to the high-frequency module and processing high-frequency signals,
    To prepare
    Communication device.

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