CN214378852U - Tile type active phased array subarray based on plastic-packaged silicon-based TR chip - Google Patents
Tile type active phased array subarray based on plastic-packaged silicon-based TR chip Download PDFInfo
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- CN214378852U CN214378852U CN202120899040.XU CN202120899040U CN214378852U CN 214378852 U CN214378852 U CN 214378852U CN 202120899040 U CN202120899040 U CN 202120899040U CN 214378852 U CN214378852 U CN 214378852U
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Abstract
The utility model provides an active phased array subarray of tile formula based on silica-based TR chip of plastic envelope. The active phased array subarray comprises an antenna subarray, a transceiving circuit board and a metal radiating shell; the antenna subarray consists of M multiplied by N double-layer broadband microstrip patch radiating units; the receiving and transmitting circuit board and all the double-layer broadband microstrip patch radiating units are arranged in a stacked mode, and a multi-layer mixed pressing plate structure is adopted to integrate corresponding M multiplied by N receiving and transmitting channels, control power distribution and power distribution into a network, wherein the multiple receiving and transmitting channels located in the same partition position are integrated in one plastic package silicon-based TR chip on the receiving and transmitting circuit board to form a tile type structure; and a heat conduction metal path is arranged between the plastic package silicon-based TR chip and the metal heat dissipation shell. The utility model discloses system reliability is high, forms the standardized active phased array subarray that can freely splice, provides convenience for framework random scale phased array.
Description
Technical Field
The utility model belongs to the technical field of the phased array radar, a tile formula active phased array subarray is related to.
Background
The existing common two-dimensional phased array is respectively a brick type and a tile type, and the difference between the two types is the relation between the arrangement direction of the TR components and the array surface. The tiled TR elements are perpendicular to the array plane, and the vertical dimension allows for increased device layout, although the TR element spacing is limited. The arrangement of the tile type TR components is parallel to the array surface, that is, the maximum area of the arrangement of the components is limited by the distance between the radiation units of the antenna, which puts a strict requirement on the size of the TR components. Compared with the prior art, the brick type array has the advantages of small realization difficulty, large size (particularly in the vertical direction), large volume and heavy mass, and most of the two-dimensional arrays adopt the mode at present.
The traditional brick type and tile type TR components are composed of a plurality of radio frequency chips (such as power amplifiers, low noise amplifiers, phase shifters, attenuators, microwave switches and the like) and digital chips, have large size and high cost, and are difficult to adapt to the requirements of two-dimensional phased array antennas. The key of the chip type radio frequency front end, which becomes the development trend of the current phased array antenna, is the development of the chip type TR, namely, the chip type TR comprises all functions required by a complete single-channel or multi-channel TR component.
Along with the large-scale use of the silicon-based semiconductor technology in the microwave field, a silicon-based microwave TR chip with high integration level appears, a single chip of the chip can realize multi-channel TR, and the chip has multiple functions of low-noise amplification, power amplifier, switch, phase-shift attenuation, driving and the like, has high integration level, theoretically has advantages in cost and technical indexes compared with the traditional scheme, and a chip-type phased array also becomes the mainstream trend of the development of the current phased array antenna.
SUMMERY OF THE UTILITY MODEL
The utility model aims at the weak point that prior art exists, provide one kind and have low cost, high integration, modularization, the radiating capacity is strong, the high tile formula active phased array subarray based on the silica-based TR chip of plastic envelope that the reliability is high.
In order to achieve the above object, the utility model provides a following scheme:
tile type active phased array subarray based on plastic package silicon based TR chip includes: the antenna comprises an antenna subarray, a transceiving circuit board and a metal radiating shell;
the antenna subarray consists of M multiplied by N double-layer broadband microstrip patch radiating units;
the receiving and transmitting circuit board and all the double-layer broadband microstrip patch radiating units are arranged in a stacked mode, and a multi-layer mixed pressing plate structure is adopted to integrate corresponding M multiplied by N receiving and transmitting channels, control power distribution and power distribution into a network, wherein the multiple receiving and transmitting channels located in the same partition position are integrated in one plastic package silicon-based TR chip on the receiving and transmitting circuit board to form a tile type structure;
and a heat conduction metal path is arranged between the plastic package silicon-based TR chip and the metal heat dissipation shell.
Furthermore, the M multiplied by N double-layer broadband microstrip patch radiating units are vertically interconnected with the transceiving circuit board through M multiplied by N insulators to form a whole.
Furthermore, a plurality of through holes filled with copper paste are formed in the receiving and transmitting circuit board printed board below the plastic package silicon-based TR chip and used for conducting heat generated by the operation of the plastic package silicon-based TR chip to the metal heat dissipation shell.
Furthermore, the integrated functional module of the plastic-packaged silicon-based TR chip comprises a radio frequency switch, a balanced power amplifier, a limiting low-noise amplifier, a 6-bit digital phase shifter, a 6-bit digital attenuator and a driving amplifier; and an SPI debugging interface, a wave control interface and a power supply modulation interface are integrated.
Furthermore, the transceiver circuit board includes a power division and synthesis network and a digital control circuit, in addition to the plurality of plastic-sealed silicon-based TR chips.
Furthermore, the number of the double-layer broadband microstrip patch radiating units is 16, and a 4 × 4 antenna subarray is formed; correspondingly, the plastic package silicon-based TR chips on the transceiving circuit board are 4, each silicon-based TR chip is provided with four transceiving channels, the amplification and the phase amplitude adjustment of received signals can be completed, and the phase-shifting amplification and the output of transmitted signals can be realized.
Further, the plastic-packaged silicon-based TR chip is a single-chip integrated four-channel TR chip working at an X wave band.
Further, the tile type active phased array sub-array external interface based on the plastic-package silicon-based TR chip comprises a radio frequency interface of an SMP connector and a power control interface of a J30J connector.
Further, the tile type active phased array subarray based on the plastic-packaged silicon-based TR chip has the working frequency of an X wave band, the bandwidth of 1GHz, and the beam scanning range: orientation: ± 45 ° pitch: 45 degrees.
Compared with the prior art, the utility model discloses following beneficial effect has:
1. the utility model has the characteristics of modularization, easy reconsitution, low cost. The utility model discloses a sub-array module is found to microstrip antenna radiation array face and chip formula TR subassembly, adopts the phased array system of any scale of different quantity sub-array restructural, and silicon-based chip is with low costs in batches, effectively reduces the complete machine cost.
2. The utility model has the characteristics of the integrated level is high, the section is low. The utility model discloses a silica-based TR chip of high integration level, a chip can realize 4 passageways TR, has a plurality of functions such as low noise is put, power amplifier, switch, phase shift decay, drive, and can direct table post on the printing board surface after the plastic envelope, easily with the antenna is integrated, the size also satisfies the demand of tile formula two-dimensional phased array antenna completely.
3. The utility model has the characteristics of the reliability is high. The utility model discloses a silica-based chip realizes the high integrated level two-dimensional phased array system of X wave band, and 4 passageway TR are realized to this type of chip a slice, can reduce the chip and use figure, simplify chip peripheral circuit and interconnection process, reduce chip circuit area, improve TR subassembly integrated level and comprehensive properties, make the single channel circuit of TR subassembly possess the space and reduce, realize tile formula TR subassembly high density integration, low-cost design, solve the limited problem in the horizontal space of tile formula phased array antenna.
4. The utility model discloses every subarray module mutual independence can debug alone. If a fault occurs, any subarray can be conveniently detached for maintenance or replacement, and therefore the maintainability of the equipment is improved.
5. The utility model has the characteristics of the heat-sinking capability is strong. The utility model discloses a have the metallized via hole that a plurality of stopper copper were handled on the receiving and dispatching circuit board, this via hole is located the silica-based TR chip of plastic envelope below, passes to the metal heat dissipation casing with the heat high efficiency that the silica-based TR chip of plastic envelope during operation produced.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
Fig. 1 is a three-dimensional schematic view of a tile-type active subarray based on a plastic-packaged silicon-based TR chip of the present invention;
FIG. 2 is a schematic diagram of the interior of a silicon-based TR chip;
FIG. 3 is a bottom view of FIG. 1;
FIG. 4 is a side view of FIG. 1;
wherein the reference numerals have the meaning:
1-a metal heat dissipation housing; 2-plastic packaging a silicon-based TR chip; 3-a transceiver circuit board; 4-an antenna radiating element; 5-a multi-core connector; 6-via holes filled with copper paste; 7-an insulator.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
Referring to fig. 1, 3 and 4, the present invention is described in detail below: a tile type active phased array subarray based on plastic package silicon-based TR chips comprises: the antenna comprises an antenna subarray, a transceiving circuit board 3 and a metal radiating shell 1, wherein the antenna subarray consists of 16 antenna radiating units 4 (double-layer broadband microstrip patch radiating units) which are arranged according to 4 multiplied by 4; the transceiving circuit board 3 integrates 16 transceiving channels, control power distribution and power distribution into a network through a multilayer mixed compression plate structure, every 4 transceiving channels are integrated in one plastic package silicon-based TR chip, received signal amplification and phase amplitude adjustment can be completed, a transmitting signal can be amplified and output in a phase-shifting manner, meanwhile, a plurality of through holes 6 filled with copper paste on the transceiving circuit board 3 are positioned below the plastic package silicon-based TR chip 2 and used for rapidly conducting heat generated by the plastic package silicon-based TR chip during working to the metal heat dissipation shell 1; the antenna radiation unit 4 and the receiving and transmitting circuit board 3 are designed in a laminated mode, and the antenna and the circuit board are vertically connected with each other through the insulator 7 to form a whole.
The silicon-based TR chip can be directly attached to the surface of a printed board after being subjected to single-chip plastic packaging, is easy to integrate with an antenna, meets the requirements of a tile-type phased array antenna on the transverse dimension, and is low in batch production cost. The chip is utilized to build an active phased array standardized subarray module, so that the integrated level is higher, the volume is smaller, the batch cost is lower, and the active phased array system of any scale can be conveniently built.
The specific embodiment is an active phased array subarray based on a 4-channel plastic-packaged silicon-based chip and adopting a tile-type structure mode, the working frequency is an X wave band, the bandwidth is 1GHz, and the wave beam scanning range is as follows: orientation: ± 45 ° pitch: +/-45 degrees, 16 receiving and transmitting channels and 16 antenna radiation units are integrated in the tile type active phased array subarray based on the plastic package silicon-based TR chip.
Referring to fig. 2: the plastic-packaged silicon-based TR chip is a single-chip integrated four-channel TR chip working in an X wave band, integrates functional modules such as a radio frequency switch, a balanced power amplifier, a limiting low-noise amplifier, a 6-bit digital phase shifter, a 6-bit digital attenuator, a driving amplifier and the like, and has excellent performance. And functional modules such as an SPI (serial peripheral interface) debugging interface, a wave control interface, power supply modulation and the like are integrated, so that great convenience is provided for system application. The silicon-based chips have low batch cost, and the cost of the whole machine can be effectively reduced. The problem that the transverse space of the tile-type active phased array is limited is effectively solved by using the silicon-based TR chip, and an effective scheme is provided for solving the problem of heat dissipation by the unique heat dissipation design of the metal shell.
In this embodiment, the power division and synthesis network is printed on the PCB, and the power division and synthesis network is composed of three wilkinson power dividers.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.
Claims (9)
1. Tile type active phased array subarray based on plastic package silicon based TR chip, which is characterized in that it includes: the antenna comprises an antenna subarray, a transceiving circuit board (3) and a metal radiating shell (1);
the antenna subarray consists of M multiplied by N double-layer broadband microstrip patch radiating units (4);
the receiving and transmitting circuit board (3) and all double-layer broadband microstrip patch radiating units (4) are arranged in a stacked mode, a multi-layer mixed compression plate structure is adopted to integrate corresponding MXN receiving and transmitting channels, control power distribution and power distribution into a network, wherein the multiple receiving and transmitting channels located in the same partition position are integrated in one plastic-sealed silicon-based TR chip (2) on the receiving and transmitting circuit board (3) to form a tile type structure;
and a heat conduction metal path is arranged between the plastic package silicon-based TR chip (2) and the metal heat dissipation shell (1).
2. The tile-type active phased array subarray based on the plastic-packaged silicon-based TR chip as claimed in claim 1, wherein: the M multiplied by N double-layer broadband microstrip patch radiating units (4) are vertically interconnected with the transceiving circuit board (3) through M multiplied by N insulators (7) to form a whole.
3. The tile-type active phased array subarray based on the plastic-packaged silicon-based TR chip as claimed in claim 1, wherein: the receiving and dispatching circuit board (3) printed board below the plastic package silicon-based TR chip (2) is provided with a plurality of through holes (6) filled with copper paste, and the through holes are used for conducting heat generated by the operation of the plastic package silicon-based TR chip (2) to the metal heat dissipation shell (1).
4. The tile-type active phased array subarray based on the plastic-packaged silicon-based TR chip as claimed in claim 1, wherein: the integrated functional module of the plastic-packaged silicon-based TR chip comprises a radio frequency switch, a balanced power amplifier, an amplitude limiting low-noise amplifier, a 6-bit digital phase shifter, a 6-bit digital attenuator and a driving amplifier; and an SPI debugging interface, a wave control interface and a power supply modulation interface are integrated.
5. The tile-type active phased array subarray based on the plastic-packaged silicon-based TR chip as claimed in claim 1, wherein: the transceiving circuit board (3) comprises a power division synthesis network and a digital control circuit besides a plurality of plastic-sealed silicon-based TR chips (2).
6. The tile-type active phased array subarray based on the plastic-packaged silicon-based TR chip as claimed in claim 1, wherein: the number of the double-layer broadband microstrip patch radiating units (4) is 16, and a 4 x 4 antenna subarray is formed; correspondingly, the plastic package silicon-based TR chips on the transceiving circuit board are 4, each silicon-based TR chip is provided with four transceiving channels, the amplification and the phase amplitude adjustment of received signals can be completed, and the phase-shifting amplification and the output of transmitted signals can be realized.
7. The tile-type active phased array subarray based on the plastic-packaged silicon-based TR chip as claimed in claim 6, wherein: the plastic package silicon-based TR chip is a single-chip integrated four-channel TR chip working at an X wave band.
8. The tile-type active phased array subarray based on the plastic-packaged silicon-based TR chip as claimed in claim 1, wherein: the tile type active phased array sub-array external interface based on the plastic package silicon-based TR chip comprises a radio frequency interface of an SMP connector and a power supply control interface of a J30J connector.
9. The tile-type active phased array subarray based on the plastic-packaged silicon-based TR chip as claimed in claim 1, wherein: the tile type active phased array subarray based on the plastic-packaged silicon-based TR chip has the working frequency of an X wave band, the bandwidth of 1GHz and the wave beam scanning range: orientation: ± 45 ° pitch: 45 degrees.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120899040.XU CN214378852U (en) | 2021-04-28 | 2021-04-28 | Tile type active phased array subarray based on plastic-packaged silicon-based TR chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120899040.XU CN214378852U (en) | 2021-04-28 | 2021-04-28 | Tile type active phased array subarray based on plastic-packaged silicon-based TR chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114300865A (en) * | 2021-12-17 | 2022-04-08 | 西安空间无线电技术研究所 | Ultra-wideband wide-angle scanning active phased array antenna system and implementation method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114300865A (en) * | 2021-12-17 | 2022-04-08 | 西安空间无线电技术研究所 | Ultra-wideband wide-angle scanning active phased array antenna system and implementation method |
| CN114300865B (en) * | 2021-12-17 | 2024-06-11 | 西安空间无线电技术研究所 | Ultra-wide bandwidth angle scanning active phased array antenna system and implementation method |
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