CN214375822U

CN214375822U - Error measuring device for DMD exposure machine

Info

Publication number: CN214375822U
Application number: CN202120553887.2U
Authority: CN
Inventors: 刘大有; 简志桦; 赖建华; 陈世勋
Original assignee: Individual
Current assignee: Individual
Priority date: 2021-03-17
Filing date: 2021-03-17
Publication date: 2021-10-08
Anticipated expiration: 2031-03-17

Abstract

An error measuring device for DMD exposure machine comprises a working platform with a track on which a carrier for moving wafer is arranged. A measuring module is disposed above the track for measuring the offset of the die on the wafer. A DMD exposure machine is disposed above the track for exposing the wafer. The measuring module and the DMD exposure machine are electrically connected with an operation module for receiving the information measured by the measuring module and controlling the DMD exposure machine to adjust the exposure parameters, thereby improving the wafer exposure precision.

Description

Error measuring device for DMD exposure machine

Technical Field

The present invention relates to photolithography, and more particularly to an error measurement device for a DMD exposure machine.

Background

In the manufacturing process of integrated circuit, the chip has plural contacts, and the wafer substrate has connection holes corresponding to the number of contacts, after the chip is "bonded" on the substrate, exposure is performed, so as to form circuits at each contact. However, after the chip is bonded to the substrate, the deviation from the standard position, such as the translational deviation shown in fig. 3A and the rotational deviation shown in fig. 3B, or the high-low tilt or warp shown in fig. 3C, may occur due to operation errors, which may cause the circuit formed by exposure to be incorrectly connected to the chip, or the focal point of light may not be precisely focused on the chip, so that the line width of the formed circuit is enlarged, and the severity affecting the product quality is more shown on the smaller chip.

The traditional off-line measuring equipment feeds information back to the exposure machine after measurement is completed, and the problem of chip offset cannot be solved due to different warping shapes of chips.

Therefore, how to improve the above problems is the primary subject to be solved by the present invention.

SUMMERY OF THE UTILITY MODEL

In order to overcome the deficiencies of the prior art, the utility model discloses main aim at provides a DMD exposure machine error measuring device, and it is integrated the operation and the exposure operation of measuring the error on same platform, has the efficiency that improves exposure machine control accuracy.

In order to achieve the above object, the utility model provides a DMD exposure machine error measuring device, it is including:

the working platform is provided with a track, and the track is provided with a carrying platform for moving the wafer;

a measuring module set on the track to measure the offset of the crystal grain on the wafer;

a DMD exposure machine arranged above the track for exposing the wafer;

and the operation module is electrically connected with the measuring module and the DMD exposure machine and used for receiving the information measured by the measuring module and controlling the DMD exposure machine to adjust the exposure parameters.

Preferably, the measurement module measures the shift offset of the die in the height direction.

Preferably, the measurement module measures the shift amount of the die in the horizontal direction.

Preferably, the measurement module measures the rotation offset of the die in the horizontal direction.

The beneficial effects of the utility model reside in that:

the utility model provides a DMD exposure machine error measuring device, it is integrated the operation of measurationing the error and the operation of exposing on same platform. The measuring module and the DMD exposure machine are electrically connected with an operation module for receiving the information measured by the measuring module and controlling the DMD exposure machine to adjust the exposure parameters so that the focal length of the light is changed in real time along with the deviated wafer, the light is always focused on the wafer, and the exposure precision is further improved.

Drawings

Fig. 1 is a perspective view of the present invention;

FIG. 2 is a schematic view of the usage state of the present invention;

fig. 3A, 3B, and 3C are schematic diagrams illustrating a defective chip deviating from a standard position on a substrate.

Reference numerals

1: a working platform; 2: a stage; 3: a measuring module; 4: a DMD exposure machine; 11: a track.

Detailed Description

The above objects and advantages of the present invention will be readily understood by the following detailed description of the selected embodiments and the accompanying drawings.

Referring to fig. 1 and 2, an error measuring device for a DMD exposure machine according to the present invention includes a working platform 1 having a linear rail 11, and a slidable carrier 2 disposed on the rail 11 for carrying a wafer and carrying the wafer.

On the support, a measuring module 3 is disposed above one end of the track 11, and when the carrying platform 2 carries a wafer below the measuring module 3, the measuring module 3 can measure the die offset of the wafer. The information measured by the measuring module 3 includes the translation offset of the die in the horizontal direction, the rotation offset of the die in the horizontal direction, and the translation offset of the die in the height direction. The measuring module 3 uses an image capturing device to capture the image of the wafer, and the translation offset and the rotation offset of the die in the horizontal direction can be obtained after the comparison and analysis with the standard file. The measuring module 3 scans the wafer by laser, receives the reflected light and analyzes the reflection angle to obtain the translation offset of the die in the height direction.

A DMD exposure Device 4(Digital Micromirror Device) for exposing the wafer is disposed above the other end of the track 11, and has a plurality of micromirrors constituting an array, and an exposure pattern is formed by adjusting the angles of the micromirrors.

Furthermore, the utility model discloses a module 3 and this DMD exposure machine 4 should be surveyed to an operation module electric connection, and this operation module receives the information that this module 3 of measurationing recorded, and then controls this DMD exposure machine 4 adjustment exposure parameter by this to make light focus on the wafer always.

Through the structure, the wafer is arranged on the carrying platform 2 and is made to move along the track 11, when the wafer passes below the measuring module 3, the translational offset of the crystal grain of the wafer in the horizontal direction, the rotational offset in the horizontal direction and the translational offset in the height direction are automatically measured by the measuring module 3, and then when the wafer continues to pass below the DMD exposure machine 4, the operation module controls the DMD exposure machine 4 to adjust the exposure parameters according to the measuring information, so that the focal length of the light can be changed in real time along with the offset wafer, the light is always focused on the wafer, and the exposure precision is further improved.

The above embodiments are merely illustrative, and not intended to limit the scope of the present invention, and the replacement of equivalent components should be regarded as the scope of the present invention.

In view of the above, it will be apparent to those skilled in the art that the present invention can achieve the above objects and meet the requirements of the patent laws.

Claims

1. The utility model provides a DMD exposure machine error measuring device which characterized in that, including:

a DMD exposure machine arranged above the track for exposing the wafer;

2. The apparatus of claim 1, wherein the measurement module includes a shift amount of the die in a height direction.

3. The apparatus of claim 1, wherein the measurement module includes a horizontal shift of the die.

4. The apparatus of claim 1, wherein the measurement module measures the rotational offset of the die in the horizontal direction.