CN214334041U - Response wave band selectable uncooled infrared detector - Google Patents
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Abstract
This patent discloses a response optional uncooled infrared detector of band. The device directly adopts a silicon-based CMOS reading circuit as a substrate, and can realize monolithic integration. The manganese-cobalt-nickel-oxygen thermistor film with broadband response characteristics is selected as the infrared absorption layer, a novel detector structure without a traditional microbridge is adopted, bridge deck collapse risks possibly faced by the microbridge structure do not exist, the yield is improved, the preparation cost is reduced, and full-waveband response can be realized. On the basis, by combining the cyclic switching of the band-pass filters of the three atmospheric windows and performing algorithm processing such as addition, subtraction, fusion and the like on signal data of different wave bands, the single-wave band, double-wave band, three-wave band and full-wave band detection functions are realized, richer target information can be obtained, the imaging contrast is improved, and the target identification capability is improved. The device and the preparation method thereof have mature process, are compatible with the standard silicon integrated circuit process, and are suitable for unit, line and area array infrared detectors.
Description
Technical Field
The patent relates to an infrared detector, in particular to a thermistor film type uncooled infrared detector with selectable response wave bands and single-wave band, double-wave band, three-wave band and full-wave band detection functions.
Background
The infrared detector has very wide application in the fields of civil use and national defense and military, such as infrared thermal imaging, meteorological remote sensing, fire prevention alarm, non-contact temperature measurement, medical diagnosis, missile early warning and interception and the like. Infrared detectors are generally classified into two major types, a refrigeration type and a non-refrigeration type. The photon detector represented by the traditional narrow bandgap semiconductor such as mercury cadmium telluride needs a complex refrigerating device to obtain high-performance response of the device, and the wide popularization and application of the detector are limited due to high cost. The uncooled infrared detector can work at room temperature without a complex refrigerating system, has lower detection performance than a refrigerated detector, can meet most civil and military applications, has low cost advantage in particular, and occupies most of the current infrared detector market. The uncooled infrared detector is a development trend of further large-scale popularization and application of the infrared detector in the future.
Broad spectrum, multiband or multicolor detection are the main development direction and requirements of the next generation of infrared detectors, and compared with single-waveband detection, the infrared detector can detect richer target signals, obtain more spectral information, improve the detection precision of temperature, improve the contrast of imaging, reduce the false alarm rate of a target and increase the identification capability of the target. At present, the realized multicolor detection function is mainly based on three refrigeration type detectors of mercury cadmium telluride, quantum wells, superlattice and the like, the detectors belong to photon detection type, multiband response is realized by preparing a laminated structure by adjusting material components or energy bands, the preparation process is complex, the requirements on the surface and interface properties of various functional layer materials forming the device are strict, and the detection device which can be realized at present is mainly limited to dual-band or bicolor response. The thermistor type infrared detector is an important uncooled infrared detector, and the basic principle is that the infrared thermal radiation is detected by measuring the change of a thermistor material resistance caused by the infrared thermal radiation of a target. The Temperature Coefficient of Resistance (TCR) of the thermistor material is one of the important parameters determining the detection performance. At present, Vanadium Oxide (VO)x) Amorphous silicon (a-Si), etcThermistor-type infrared detectors typified by conventional thermosensitive materials have been commercially used, but the absolute values of TCR of these materials at room temperature are relatively low, such as VO at room temperaturexAnd a-Si are both about-2%/K, limiting the improvement in detection performance. Therefore, there is a need to further develop a novel thermosensitive material having a high TCR absolute value. In addition, this kind of non-refrigeration type detector adopts a micro-bridge resonant cavity structure, and the height of the micro-bridge is usually designed to 1/4 wavelengths, resulting in a single response band, for example, for object detection at room temperature (e.g. 300K, corresponding to a radiation peak wavelength of-10 μm), the height of the micro-bridge needs to be designed to be about 2.5 μm, and the corresponding spectral response range of the detector is about 8-14 μm. The use of the microbridge structure increases the complexity of the device process, in order to form the microbridge, a sacrificial layer, a supporting layer and a passivation layer need to be additionally prepared, an additional etching process is needed, if the height is high, the difficulty is increased, the risk of collapse of the bridge deck exists, the yield is reduced, and further the preparation cost is increased. Furthermore, conventional microbridge fabrication processes are not compatible with standard silicon integrated circuit processes, such as microbridge fabrication involving high temperature process requirements, such as about 750 degrees, whereas silicon-based readout circuits have a maximum temperature tolerance of only about 450 degrees.
Relatively few documents are published on the two-color/multi-color uncooled infrared detector. Patent [ gan pioneer, poplars, wang hongchen, chen wen li, a "non-refrigeration double-color infrared detector MEMS chip and its manufacturing method", the grant bulletin number: CN 107117578B discloses a preparation structure and a preparation method of an uncooled infrared detector, which adopts a mode of combining two microbridge structures with different heights to realize detection of double wave bands, but the double microbridge structure can obviously increase the difficulty of the preparation process, reduce the yield and further promote the preparation cost.
Disclosure of Invention
Based on the problems of the prior art, the objective of the patent is to provide a thermistor film type uncooled infrared detector with selectable response bands and single-band, double-band, three-band and full-band detection functions.
The transition metal oxide of Mn-Co-Ni-O (MCN) is a new type heat-sensitive electricFor semiconductor materials, magnetron sputtering has been adopted in our laboratories [ see document 1]]The MCN film with high quality is prepared at room temperature, and experimental research shows that the TCR of the MCN film at room temperature is about-3% -4%/K, which is superior to the traditional VOxAnd a-Si, etc., -2%/K. Meanwhile, transition metals manganese, cobalt, nickel and oxides forming the MCN material have high polarizability and generate strong coupling with external electromagnetic waves, so that the MCN material has very wide spectral response (0.2-50 μm) and high infrared radiation absorption capacity [ see document 2 ]]. These experimental studies show that based on the performance advantages of the MCN material, a high-performance MCN thermosensitive infrared absorption layer thin film material can be directly deposited on a Si-based cmos readout circuit without adopting a conventional micro-bridge structure that causes the device to have a narrow single response band, so that the advantage of the MCN material that can respond in a broad spectrum is fully exerted, and non-refrigeration infrared detection in a full band is realized.
It is well known that there are 3 atmospheric transmission windows in the atmosphere, 1-2.5 μm, 3-5 μm and 8-14 μm, respectively referred to as Short Wave Infrared (SWIR), Medium Wave Infrared (MWIR) and Long Wave Infrared (LWIR). On the basis of successful development of the full-waveband uncooled infrared detector, if the full-waveband uncooled infrared detector is matched with the band-pass filters aiming at 3 atmospheric transmission windows for switching, infrared radiation signals of the same target in different wavebands can be obtained, and single-waveband, double-waveband, three-waveband and full-waveband detection functions can be realized through algorithm processing such as subsequent addition, subtraction and fusion of signal data.
Therefore, the technical scheme of the patent is as follows: directly depositing a high-performance MCN heat-sensitive infrared absorption layer film material on a Si-based COMS reading circuit to realize the preparation of a full-waveband uncooled infrared detector; furthermore, a band-pass filter circulating switching device is arranged in front of the full-waveband uncooled infrared detector, a filter circulating switching time sequence and a signal reading time sequence are controlled through a peripheral auxiliary electronic system, arithmetic processing such as addition and subtraction fusion is carried out on data, and the thermistor film type uncooled infrared detector with the selectable response waveband and having the single-waveband, double-waveband, three-waveband and full-waveband detecting functions is achieved.
The documents referred to above are as follows:
1.J.Wu,Z.Huang,L.Jiang,Y.Gao,W.Zhou,and J.Chu,Flexible thermistors MCNO films with low resistivity and high TCR deposited on flexible organic sheets by RF magnetron sputtering,Proc.SPIE 10403(2017)104030C；
2.Z.Huang,W.Zhou,C.Ouyang,J.Wu,F.Zhang,J.Huang,Y.Gao,and J.Chu,High performance of Mn-Co-Ni-O spinel nanofilms sputtered from acetate precursors.Sci.Rep.5(2015)10899；
the structural section view of the uncooled infrared detector with the selectable response waveband is shown in figure 1, and comprises an uncooled infrared detector 1 with full waveband response and an optical filter switching device 2, and is characterized in that:
the uncooled infrared detector with the selectable response waveband is provided with an optical filter switching device 2 and a full-waveband response uncooled infrared detector 1 in sequence from the infrared radiation direction;
the structural cross-sectional view of the full-waveband response uncooled infrared detector 1 is shown in fig. 2 and comprises a silicon-based CMOS reading circuit 1-1, an insulating layer 1-2, a heat insulating layer 1-3, a thermistor film 1-4 and a metal electrode 1-5;
the uncooled infrared detector 1 with full-waveband response sequentially comprises an insulating layer 1-2, a heat insulating layer 1-3, a thermistor film 1-4 and a metal electrode 1-5 from the Si-based CMOS read-out circuit 1-1;
the insulating layer 1-2 is a silicon dioxide insulating layer with the thickness of 50 nm;
the heat insulation layer 1-3 is a polyimide heat insulation layer with the thickness of 0.8-1.2 μm;
the thermistor thin films 1-4 are manganese cobalt nickel oxygen thermistor thin films, and the thickness of the thermistor thin films is 1.5-2.5 micrometers;
the metal electrodes 1-5 are chromium and gold composite electrodes with the thicknesses of 30nm and 150nm respectively;
the structural plan view of the optical filter switching device 2 is shown in fig. 3, the optical filter switching device 2 is a disc-shaped optical filter wheel, four circular windows are symmetrically formed in the center, the size of each window covers the non-refrigeration infrared detector 1 with full-wave-band response, and a first optical filter 3-1, a second optical filter 3-2 and a third optical filter 3-3 are embedded in the three windows in sequence;
the first optical filter 3-1 is a short wave infrared (1-2.5 mu m) band-pass filter;
the second optical filter 3-2 is a medium-wave infrared (3-5 mu m) band-pass filter;
the third optical filter 3-3 is a long-wave infrared (8-14 μm) band-pass filter.
The preparation method of the uncooled infrared detector with the selectable response waveband comprises the following steps:
1 preparing a silicon dioxide insulating layer with a thickness of 50nm on a silicon-based CMOS readout circuit;
the adopted preparation method is a magnetron sputtering method.
The silicon dioxide insulating layer serves to protect the readout circuitry.
2 preparing a polyimide thermal insulation layer on the silicon dioxide insulation layer, wherein the thickness of the polyimide thermal insulation layer is 0.8-1.2 mu m;
the preparation method adopted is a solution spin coating method.
The polyimide heat insulation layer is used for reducing the heat conduction of the device and improving the response rate of the device.
3 preparing a manganese-cobalt-nickel-oxygen thermistor film with a thickness of 1.5-2.5 μm on the polyimide heat insulation layer;
the preparation method adopted is a magnetron sputtering method [ see document 1 ].
4, preparing the manganese-cobalt-nickel-oxygen thermistor film into discrete manganese-cobalt-nickel-oxygen film detection elements through photoetching processes such as photoetching, corrosion, developing treatment and the like, and exposing electrodes of the silicon-based CMOS readout circuit;
5 preparing chromium and gold composite electrodes at two ends of the manganese-cobalt-nickel-oxygen thin film detection element by photoetching, corrosion, development treatment and other photoetching pattern processes by a certain method, wherein the chromium and gold composite electrodes are in contact with electrodes of a CMOS reading circuit at the bottom end, and the thicknesses of the chromium and gold composite electrodes are respectively 30nm and 150 nm;
the preparation method is a magnetron sputtering method or a dual-ion beam sputtering method.
The chromium and gold composite electrode is used for forming ohmic contact with the manganese-cobalt-nickel-oxygen thermistor film and outputting signals by being connected with a reading circuit.
6, assembling a disc-shaped filter wheel, and symmetrically forming four circular windows in the center of the filter wheel, wherein three circular windows are sequentially embedded with a short-wave infrared (1-2.5 mu m) band-pass filter, a medium-wave infrared (3-5 mu m) band-pass filter and a long-wave infrared (8-14 mu m) band-pass filter, and the fourth circular window is a blank window;
the circular window is superposed with the center of the uncooled infrared detector with full-waveband response prepared from 1 to 5, and the size of the circular window covers the uncooled infrared detector with full-waveband response.
The peripheral electronic system controls the optical filter to circularly switch the time sequence and the signal reading time sequence, and performs algorithm processing such as addition, subtraction, fusion and the like on data, so that the single-waveband, double-waveband, three-waveband and full-waveband detection functions can be realized.
The most obvious advantage of this patent is:
1. the silicon-based CMOS readout circuit is directly used as a substrate, a single-chip integrated detection device is realized, single-chip integration is beneficial to reducing noise and improving detection performance, and the silicon-based CMOS readout circuit is suitable for unit, linear and area array infrared detectors.
2. The device does not contain a traditional micro-bridge structure, is compatible with a standard silicon integrated circuit process, does not have the bridge deck collapse risk possibly faced by the traditional micro-bridge structure, increases the overall strength of the device, improves the yield and further reduces the preparation cost.
3. The device can realize single-waveband, dual-waveband, three-waveband and full-waveband detection simultaneously, has "a scene is many like" function, compares in single-waveband detection, and the detectable is abundanter target signal, obtains more spectral information, promotes the detection precision of temperature, improves the contrast of formation of image, reduces the false alarm rate of target, increases the discernment ability of target. And a band-pass filter with a specific wave band can be selected to realize the detection of the specific wave band, and the functions of the detector are further expanded.
Drawings
FIG. 1 is a cross-sectional view of an uncooled infrared detector of the present patent with an alternative response band.
Fig. 2 is a cross-sectional view of a full-band response uncooled infrared detector according to the present patent.
Fig. 3 is a top view of the filter switching device according to the present disclosure.
Reference numbers in the figures: the non-refrigeration infrared detector comprises a full-waveband response non-refrigeration infrared detector 1, a filter switching device 2, a filter 3, a silicon-based CMOS reading circuit 1-1, an insulating layer 1-2, a heat insulation layer 1-3, a thermistor film 1-4, a metal electrode 1-5, a first filter 3-1, a second filter 3-2, a third filter 3-3 and a blank window 3-4.
Detailed Description
The following detailed description of embodiments of the present patent refers to the accompanying drawings and examples:
example 1:
1. a silicon dioxide insulating layer is prepared on a silicon-based CMOS reading circuit by adopting a magnetron sputtering method, and the thickness of the silicon dioxide insulating layer is 50 nm.
2. A polyimide heat insulation layer is prepared on the silicon dioxide insulation layer by adopting a solution spin coating method, and the thickness of the polyimide heat insulation layer is 0.8 mu m.
3. The manganese-cobalt-nickel-oxygen thermistor film is prepared on the polyimide thermal insulation layer by adopting a magnetron sputtering method, and the thickness of the manganese-cobalt-nickel-oxygen thermistor film is 1.5 mu m.
4. The manganese cobalt nickel oxygen thermistor film is prepared into discrete manganese cobalt nickel oxygen film detecting elements through photoetching processes such as photoetching, corrosion, developing treatment and the like, and electrodes of a silicon-based CMOS reading circuit are exposed.
5. By photoetching, corroding, developing and other photoetching pattern processes, a magnetron sputtering method is adopted to prepare chromium and gold composite electrodes at two ends of the manganese-cobalt-nickel-oxygen film detection element, the bottom ends of the chromium and gold composite electrodes are in contact with electrodes of a CMOS reading circuit, and the thicknesses of the chromium and gold composite electrodes are respectively 30nm and 150 nm.
6. Assembling a disc-shaped filter wheel, symmetrically forming four circular windows in the center of the filter wheel, sequentially embedding a short-wave infrared (1-2.5 mu m) band-pass filter, a medium-wave infrared (3-5 mu m) band-pass filter and a long-wave infrared (8-14 mu m) band-pass filter in the three circular windows, and forming a blank window in the fourth circular window.
The center of the circular window is overlapped with the center of the full-waveband response uncooled infrared detector prepared in the step 1-5, and the size of the circular window covers the full-waveband response uncooled infrared detector. The peripheral electronic system controls the optical filter to circularly switch the time sequence and the signal reading time sequence, performs algorithm processing such as addition, subtraction, fusion and the like on data, performs permutation and combination of different wave band data, and can realize the single-wave band, double-wave band, three-wave band and full-wave band detection functions.
Example 2:
1. a silicon dioxide insulating layer is prepared on a silicon-based CMOS reading circuit by adopting a magnetron sputtering method, and the thickness of the silicon dioxide insulating layer is 50 nm.
2. A polyimide thermal insulation layer is prepared on the silicon dioxide insulation layer by adopting a solution spin coating method, and the thickness of the polyimide thermal insulation layer is 1.0 mu m.
3. The manganese-cobalt-nickel-oxygen thermistor film is prepared on the polyimide thermal insulation layer by adopting a magnetron sputtering method, and the thickness of the manganese-cobalt-nickel-oxygen thermistor film is 1.8 mu m.
4. The manganese cobalt nickel oxygen thermistor film is prepared into discrete manganese cobalt nickel oxygen film detecting elements through photoetching processes such as photoetching, corrosion, developing treatment and the like, and electrodes of a silicon-based CMOS reading circuit are exposed.
5. By photoetching, etching, developing and other photoetching pattern processes, a chromium and gold composite electrode is prepared at two ends of the manganese-cobalt-nickel-oxygen film detection element by adopting a dual-ion beam sputtering method, the bottom end of the chromium and gold composite electrode is contacted with an electrode of a CMOS reading circuit, and the thicknesses of the chromium and gold composite electrode are respectively 30nm and 150 nm.
6. Assembling a disc-shaped filter wheel, symmetrically forming four circular windows in the center of the filter wheel, sequentially embedding a short-wave infrared (1-2.5 mu m) band-pass filter, a medium-wave infrared (3-5 mu m) band-pass filter and a long-wave infrared (8-14 mu m) band-pass filter in the three circular windows, and forming a blank window in the fourth circular window.
The center of the circular window is overlapped with the center of the full-waveband response uncooled infrared detector prepared in the step 1-5, and the size of the circular window covers the full-waveband response uncooled infrared detector. The peripheral electronic system controls the optical filter to circularly switch the time sequence and the signal reading time sequence, performs algorithm processing such as addition, subtraction, fusion and the like on data, performs permutation and combination of different wave band data, and can realize the single-wave band, double-wave band, three-wave band and full-wave band detection functions.
Example 3:
1. a silicon dioxide insulating layer is prepared on a silicon-based CMOS reading circuit by adopting a magnetron sputtering method, and the thickness of the silicon dioxide insulating layer is 50 nm.
2. A polyimide thermal insulation layer is prepared on the silicon dioxide insulation layer by adopting a solution spin coating method, and the thickness of the polyimide thermal insulation layer is 1.2 mu m.
3. The Mn-Co-Ni-O thermistor film is prepared on the polyimide thermal insulation layer by adopting a magnetron sputtering method, and the thickness of the Mn-Co-Ni-O thermistor film is 2.5 mu m.
4. The manganese cobalt nickel oxygen thermistor film is prepared into discrete manganese cobalt nickel oxygen film detecting elements through photoetching processes such as photoetching, corrosion, developing treatment and the like, and electrodes of a silicon-based CMOS reading circuit are exposed.
5. By photoetching, etching, developing and other photoetching pattern processes, a chromium and gold composite electrode is prepared at two ends of the manganese-cobalt-nickel-oxygen film detection element by adopting a dual-ion beam sputtering method, the bottom end of the chromium and gold composite electrode is contacted with an electrode of a CMOS reading circuit, and the thicknesses of the chromium and gold composite electrode are respectively 30nm and 150 nm.
6. Assembling a disc-shaped filter wheel, symmetrically forming four circular windows in the center of the filter wheel, sequentially embedding a short-wave infrared (1-2.5 mu m) band-pass filter, a medium-wave infrared (3-5 mu m) band-pass filter and a long-wave infrared (8-14 mu m) band-pass filter in the three circular windows, and forming a blank window in the fourth circular window.
The center of the circular window is overlapped with the center of the full-waveband response uncooled infrared detector prepared in the step 1-5, and the size of the circular window covers the full-waveband response uncooled infrared detector. The peripheral electronic system controls the optical filter to circularly switch the time sequence and the signal reading time sequence, performs algorithm processing such as addition, subtraction, fusion and the like on data, performs permutation and combination of different wave band data, and can realize the single-wave band, double-wave band, three-wave band and full-wave band detection functions.
Claims (1)
1. A response band selectable uncooled infrared detector comprises a full-band response uncooled infrared detector (1) and an optical filter switching device (2); the method is characterized in that:
the uncooled infrared detector with the selectable response band sequentially comprises a filter switching device (2) and a full-band response uncooled infrared detector (1) from the infrared radiation direction;
the non-refrigeration infrared detector (1) with full-wave-band response comprises a silicon-based CMOS reading circuit (1-1), an insulating layer (1-2), a heat-insulating layer (1-3), a thermistor film (1-4) and a metal electrode (1-5);
the non-refrigeration infrared detector (1) with full-wave-band response sequentially comprises an insulating layer (1-2), a heat insulating layer (1-3), a thermistor film (1-4) and a metal electrode (1-5) from a silicon-based CMOS read-out circuit (1-1);
the insulating layer (1-2) is a silicon dioxide insulating layer with the thickness of 50 nm;
the heat insulation layer (1-3) is a polyimide heat insulation layer, and the thickness of the heat insulation layer is 0.8-1.2 mu m;
the thermistor film (1-4) is a manganese-cobalt-nickel-oxygen thermistor film with the thickness of 1.5-2.5 mu m;
the metal electrodes (1-5) are chromium and gold composite electrodes, and the thicknesses of the metal electrodes are respectively 30nm and 150 nm;
the optical filter switching device (2) is a disc-shaped optical filter wheel, four circular windows are symmetrically formed in the center, the size of each window covers the non-refrigeration infrared detector (1) with full-wave-band response, and a first optical filter (3-1), a second optical filter (3-2) and a third optical filter (3-3) are embedded in the three windows in sequence;
the first optical filter (3-1) is a short wave infrared 1-2.5 μm band-pass filter;
the second optical filter (3-2) is a medium-wave infrared 3-5 mu m band-pass optical filter;
the third optical filter (3-3) is a long-wave infrared 8-14 μm band-pass filter.
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