CN214252434U - Pin equivalent resistance detection circuit and chip - Google Patents
Pin equivalent resistance detection circuit and chip Download PDFInfo
- Publication number
- CN214252434U CN214252434U CN202023223671.4U CN202023223671U CN214252434U CN 214252434 U CN214252434 U CN 214252434U CN 202023223671 U CN202023223671 U CN 202023223671U CN 214252434 U CN214252434 U CN 214252434U
- Authority
- CN
- China
- Prior art keywords
- voltage
- circuit
- detection
- pin
- reference voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention provides a pin equivalent resistance detection circuit for chip testing and a chip, wherein the detection voltage input into a pin to be tested is divided into two paths, one path of the detection voltage outputs reference voltage through a reference voltage circuit, the other path of the detection voltage is used as a power supply end of an amplifier in a voltage detection circuit, and the two paths of voltages are compared, so that whether the contact resistance of the chip pin and a test socket changes or not can be determined, and the test result of the chip testing is not influenced.
Description
Technical Field
The invention relates to chip detection, in particular to a pin equivalent resistance detection circuit, a pin equivalent resistance detection method and a chip.
Background
With the development of electronic technology, the integration degree of electronic products is higher and higher, the structures are finer and finer, the processes are more and more, and the manufacturing process is more and more complex, so that the defects generated in the manufacturing process can be enlarged. For a qualified electronic product, not only higher performance indexes but also higher stability are required, and the stability of the electronic product depends on factors such as the reasonability of design, the performance of components, the whole machine manufacturing process and the like.
A chip, i.e. an integrated circuit, usually needs to go through a series of functional tests when it is shipped from a factory, where FT (Final Test) includes a DC (Direct Current) Test, which is a steady-state Test for determining electrical parameters of a device based on ohm's law. The DC test comprises a plurality of tests, one of which is a leakage current test, specifically, a pin to be tested inputs a test voltage, so that a current flows between the pin to be tested and a grounding pin or a power supply pin, and the voltage difference between the pins is determined by testing the magnitude of the current, so as to determine whether the pin to be tested is qualified in the leakage current test.
A large number of chips of the same type are usually tested on the same test board, and a test socket on the test board is inevitably welded or plugged for many times in the test process of the large number of chips, so that the contact resistance of the test socket and pins is changed, the change can generate adverse effects on test results and other test flows, a measured value which is not consistent with an actual value is tested, the quality of the chips is judged wrongly, and product evaluation is influenced.
The total resistance of the chip interior and the contact resistance can be obtained by measuring the pin current and combining the test voltage, however, the equivalent resistance of the chip interior is different between different pins, the chip interior circuit is complex, the equivalent resistance calculation is complex, and the equivalent resistance calculation is nearly impossible for a highly integrated complex circuit, so that the method of measuring the pin current is not practical.
Disclosure of Invention
In view of the above, the present invention provides a pin equivalent resistance detection circuit and detection method for chip testing, and a chip, by which whether contact resistance between a chip pin and a test socket changes can be determined, so that a test result of the chip testing is not affected.
In a first aspect, the present invention provides a pin equivalent resistance detection circuit, where the detection circuit includes:
the input end of the reference voltage circuit is connected with at least one chip pin and used for outputting reference voltage according to detection voltage input by a pin to be detected; and
the voltage detection circuit comprises a first input end and a second input end, the first input end is connected with the output end of the reference voltage circuit, and the second input end is connected with at least one chip pin and used for comparing according to the reference voltage and the detection voltage.
Specifically, the reference voltage is smaller than the detection voltage.
Specifically, the voltage detection circuit includes an amplifier, an input terminal of the amplifier is used as the first input terminal, and a power supply terminal is used as the second input terminal, and is configured to read a voltage value of the reference voltage according to the detection voltage.
Specifically, the voltage detection circuit includes:
the voltage dividing circuit comprises a first voltage dividing resistor and a second voltage dividing resistor which are connected in series, wherein the input end of the voltage dividing circuit is used as the second input end, and the output end of the voltage dividing circuit is positioned between the first voltage dividing resistor and the second voltage dividing resistor and is used for dividing the detection voltage;
and the comparator is connected with the output end of the voltage division circuit at the inverting input end, is connected with the output end of the reference voltage circuit at the non-inverting input end serving as the first input end, and is used for comparing the output of the voltage division circuit with the reference voltage.
Specifically, the reference voltage circuit includes a first resistor, a second resistor, a first current source, and a second current source,
the input end of the first current source is connected with at least one chip pin, and the output end of the first current source is connected with the input end of the first resistor;
the output end of the first resistor is connected with the input end of the second current source;
the input end of the second resistor is connected with at least one chip pin, and the output end of the second resistor is connected with the input end of the second current source;
the output end of the reference voltage circuit is arranged at the input end of the first resistor.
Specifically, the reference voltage circuit is a bandgap reference circuit.
In a second aspect, the present invention provides a detection method for the detection circuit, including:
inputting a detection voltage through a pin to be detected;
generating a reference voltage by a reference voltage circuit according to the detection voltage;
and comparing the detection voltage with the reference voltage through a voltage detection circuit.
Specifically, the comparing by the voltage detection circuit according to the detection voltage and the reference voltage specifically includes:
and reading the voltage value of the reference voltage under the detection voltage through an amplifier, calculating the voltage of the power supply terminal of the amplifier corresponding to the voltage value, and comparing the voltage with the detection voltage.
Specifically, the detection method further comprises: and measuring the detection current of the pin to be detected, and determining the equivalent resistance of the pin according to the detection voltage, the detection current and the voltage value.
Specifically, the comparing by the voltage detection circuit according to the detection voltage and the reference voltage specifically includes:
and dividing the detection voltage by a voltage dividing circuit, and comparing the divided detection voltage with the reference voltage by a comparator.
In a third aspect, the invention provides a chip applying the detection circuit and the detection method.
The invention provides a pin equivalent resistance detection circuit, a detection method and a chip.A predicted detection voltage input into a pin to be detected is divided into two paths, one path of the detection voltage outputs a reference voltage through a reference voltage circuit, the other path of the detection voltage is used as a power supply end of an amplifier in a voltage detection circuit, a voltage value is read through the amplifier, the voltage value is compared with the detection voltage according to the voltage value, if the read voltage value is approximate to the detection voltage, the contact resistance between the pin to be detected and a test socket can be judged to be approximate to zero, and the chip test work is not influenced; if the difference between the read voltage value and the detection voltage is larger, the existence and larger contact resistance can be judged, and the adverse effect on the chip test can be generated.
Drawings
FIG. 1 is a schematic diagram of an equivalent resistance circuit of a chip pin and a pin of a test socket.
Fig. 2 is a schematic circuit configuration diagram of the pin equivalent resistance detection circuit for chip testing according to the present invention.
Fig. 3 is a schematic diagram of a detection voltage shunt of a pin to be detected of an input chip.
Fig. 4 is a schematic diagram of a detection circuit including a specific circuit configuration of a voltage detection circuit according to the present invention.
Fig. 5 is a schematic diagram of another detection circuit including a specific circuit configuration of the voltage detection circuit according to the present invention.
FIG. 6 is a schematic diagram of a detection circuit including a specific circuit configuration of a reference voltage circuit according to the present invention.
FIG. 7 is a schematic diagram of another detection circuit including a specific circuit configuration of a reference voltage circuit according to the present invention.
FIG. 8 is a diagram of the steps of the detection method provided by the present invention.
Detailed Description
The technical solutions in the present invention will be described clearly and completely with reference to the accompanying drawings, and it is to be understood that the described embodiments are only a part of the present invention, and not all of it. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step, are within the scope of the present invention.
Referring to fig. 1, which shows an example of a pin equivalent resistance circuit of a chip pin and a test socket, when a leakage current test as described in the background art is performed, a detection voltage VDD is input to a pin IO to be tested, a contact resistance between a ground pin GND and the test socket is shown as an equivalent resistance Req in the figure, under an ideal test environment, the equivalent resistance Req is equal to 0, a voltage input from the outside to the inside of the chip is equal to the detection voltage VDD, and when the equivalent resistance Req changes, the voltage input from the outside to the inside of the chip is less than the detection voltage VDD, and a chip measurement result will be affected.
Therefore, the present invention is based on the above problems, and provides a pin equivalent resistance detection circuit for chip testing, the detection circuit comprising:
the input end of the reference voltage circuit is connected with at least one chip pin and used for outputting reference voltage according to detection voltage input by a pin to be detected; and
the voltage detection circuit comprises a first input end and a second input end, the first input end is connected with the output end of the reference voltage circuit, and the second input end is connected with at least one chip pin and used for comparing according to the reference voltage and the detection voltage.
Referring to FIG. 2, the chip includes a plurality of pins IO1、IO2、IO3、IO4、IO5、IO6、IO7、IO8GND, wherein IO1、IO2、IO3、IO4、IO5、IO6、IO7、IO8For the pin to be tested, GND is a grounding pin, the output end of a reference voltage circuit is connected with the first input end of a voltage detection circuit, and a plurality of pins to be tested IO are connected1、IO2、IO3、IO4、IO5、IO6、IO7、IO8Respectively connected with the input end of the reference voltage circuit and the second input end of the voltage detection circuit.
As an example, taking one of the pins under test as an example, referring to fig. 3, the detection voltage VDD is detected from the pin under test IO1The input of the voltage detection circuit is divided into a first path of detection voltage VBAT and a second path of detection voltage VDDIO, wherein the first path of detection voltage VBAT is input into a reference voltage circuit, the output of the reference voltage circuit is used as the first input end of the voltage detection circuit, and the second path of detection voltage VDDIO is input into the voltage detection circuitA second input terminal of the way.
As an example, the voltage detection circuit includes an amplifier having an input terminal as a first input terminal and a power supply terminal as a second input terminal for performing voltage value reading of the reference voltage based on the detection voltage.
Specifically, as shown in fig. 4, REF shown in the figure is the reference voltage circuit, VREF output by the reference voltage circuit is a reference voltage, the amplifier shown in the figure is the voltage detection circuit, the first path of detection voltage VBAT is used as a bias voltage of the reference voltage circuit, the second path of detection voltage VDDIO is used as a power supply terminal bias voltage of the amplifier, the reference voltage circuit outputs the reference voltage VREF to an input end of the amplifier, and voltage value reading is performed through the amplifier according to the reference voltage VREF and the second path of detection voltage VDDIO.
The reference voltage VREF is a steady-state voltage which does not change along with the input of the first path of detection voltage VBAT, the voltage with a fixed amplitude is output according to the circuit design of a reference voltage circuit without being influenced by the voltage amplitude of the first path of detection voltage VBAT, and the reference voltage VREF is smaller than the detection voltage VDD. For example, when the first path of detection voltage VBAT is 5V, the reference voltage circuit outputs a reference voltage VREF of 1.25V through circuit design; when the first path detection voltage VBAT is reduced to 4.5V, the reference voltage circuit outputs the reference voltage which is also 1.25V, and there is no corresponding relationship between the voltage input and the voltage output of the reference voltage circuit.
The invention aims to detect the existence of the equivalent resistor Req shown in fig. 1, wherein the equivalent resistor Req influences the voltage of the detection voltage VDD input chip, so that the existence of the equivalent resistor Req can be obtained by detecting the sizes of the first path of detection voltage or the second path of detection voltage and comparing the detection voltage VDD.
According to the above aspect of the present invention, the first detection voltage VBAT is (VREF/K) × M, where VREF is a reference voltage, K is a binary bit number of the amplifier, and M is a value read by the output terminal of the amplifier.
Since the reference voltage is obtained by circuit design of the reference voltage circuit, the voltage value of the reference voltage is a known condition in the present invention, and also the detection voltage VDD and the circuit parameters of the amplifier are known conditions.
As an example of the amplifier, the amplifier provided by the invention is a 10-bit amplifier, which divides the voltage of the power supply into 2^10 parts, namely 1024 parts, the amplifier reading is 0-1023, the value 0 represents that the input voltage of the input end is 0V, and the value 1023 represents that the input voltage of the input end is equal to the voltage of the power supply. Taking the reference voltage as 1.25V and the detection voltage VDD as 5V as an example, if the value read through the output end of the amplifier is 388, it can be estimated that the second detection voltage VDDIO is (1023/388) × 1.25V, which is about 3.3V, and the first detection voltage VBAT is the second detection voltage VDDIO < the detection voltage VDD, so that it can be known that the equivalent resistance Req exists; if the value read by the output terminal of the amplifier is 1020, it can be estimated that the second path detection voltage VDDIO is (1023/1020) × 1.25V, which is about 5V, and the first path detection voltage VBAT is the second path detection voltage VDDIO is the detection voltage VDD, so that it can be known that the equivalent resistance Req is approximately absent.
In the above example, the amplifier reads the voltage value of the reference voltage VREF under the second path of detection voltage VDDIO, calculates the voltage of the second path of detection voltage VDDIO, and then determines whether the equivalent resistance Req exists.
As an example, referring to fig. 5, REF is shown as the reference voltage circuit, and VREF output by the reference voltage circuit is a reference voltage, the voltage detection circuit includes a voltage division circuit shown by a dotted frame and a comparator, and the voltage division circuit includes a first voltage division resistor R connected in series with each otherD1And a second voltage dividing resistor RD2The input end of the voltage divider circuit is used as the second input end of the voltage detection circuit, and the output end of the voltage divider circuit is arranged at the first voltage dividing resistor RD1And a second voltage dividing resistor RD2The second path of detection voltage VDDIO is used for dividing the second path of detection voltage VDDIO; the inverting input end of the comparator is connected with the output end of the voltage division circuit, the non-inverting input end of the comparator is used as the first input end of the voltage detection circuit, is connected with the output end of the reference voltage circuit and is used for comparing the output of the voltage division circuit with the reference voltage.
When the voltage dividing circuit is designed, the specification of the element is selected to pass through the first voltage dividing resistor RD1And a second voltage dividing resistor RD2When the second path of detection voltage VDDIO is divided, and the output is approximately absent in the equivalent resistance Req, the voltage VDDIO' output by the voltage dividing circuit is equal to the reference voltage VREF.
Continuing to refer to fig. 5, the comparator compares the output VDDIO 'of the voltage divider circuit with the reference voltage VREF, and when the equivalent resistance Req does not exist approximately, the comparator outputs a low level because the voltage VDDIO' output by the voltage divider circuit is equal to the reference voltage VREF; when the equivalent resistor Req exists, the second path of detection voltage VDDIO is smaller than the detection voltage VDD, the voltage VDDIO' output by the voltage division circuit is smaller than the reference voltage VREF, and the comparator outputs a high level. Taking the reference voltage as 1.25V and the detection voltage VDD as 5V as an example, the circuit design of the voltage divider circuit makes the voltage divider circuit output 1.25V when the second detection voltage VDDIO is 5V, and when the equivalent resistance Req does not exist approximately, VDDIO' is 1.25V VREF, and the comparator outputs a low level; when the equivalent resistance Req exists, the second path detection voltage VDDIO is less than 5V, VDDIO' < VREF is 1.25V, and the comparator outputs high level.
In the above example, the voltage divider circuit divides the second path of detection voltage VDDIO to output the same voltage VDDIO 'as the reference voltage VREF when the equivalent resistance Req does not exist approximately, and the comparator compares the voltage VDDIO' with the reference voltage VREF to determine whether the equivalent resistance Req exists or not.
As an exemplary circuit of the reference voltage circuit of the present invention, referring to FIG. 6, the left side is shown in a dotted line, the right side is shown in a dotted line, and the reference voltage circuit shown in a dotted line includes a first resistor R1A second resistor R2A first current source I1And a second current source I2Wherein, in the step (A),
the first current source I1The input end is connected with at least one chip pin, and the output end is connected with the first resistor R1The input ends are connected;
the first resistor R1An output terminal and a second current source I2Input deviceEnd connection;
the second resistor R2The input end is connected with at least one chip pin, and the output end is connected with a second current source I2The input ends are connected;
the output end of the reference voltage circuit is arranged at the first resistor R1An input terminal.
The reference voltage circuit of the above example is configured by the first current source I as a constant current source1And a first resistor R1Outputting a reference voltage VREF with a stable and fixed amplitude, wherein the specific amplitude of the reference voltage VREF can be controlled by a first current source I1And a first resistor R1The device specification of (1) is selected and implemented, and the invention is not limited herein.
As another exemplary circuit of the above-described reference voltage circuit of the present invention, referring to fig. 7, a left side dotted frame shows the voltage detection circuit, a right side frame shows the voltage detection circuit, and a reference voltage circuit shown by a dotted frame shows a bandgap reference circuit. The bandgap reference circuit is a typical technology of a reference voltage source, and outputs a reference voltage independent of a power supply and temperature, and has a circuit for determining a temperature characteristic and a reference voltage, and the output reference voltage is about 1.25V. FIG. 6 shows a conventional bandgap reference circuit, which is composed of a plurality of field effect transistors M1、M2、M3、M4、M5And a plurality of transistors Q1、Q2、Q3Forming a band gap core circuit through a resistor R4And converting the current into a reference voltage VREF for output.
The reference voltage circuit shown in fig. 6 and the bandgap reference circuit shown in fig. 7 are only illustrated as examples, wherein, there are various specific implementation circuits of the bandgap reference circuit, and those skilled in the art can arbitrarily select a desired circuit structure in the prior art without being limited by the above circuits.
It should be noted that, for the sake of brief description, in the above description, the detection of the pin is the detection between the pin to be detected and the ground pin, and for the detection of replacing the ground pin with another pin, another voltage VDD 'having a voltage difference with the detection voltage may be input at the other pin, the first path of detection voltage VBAT is the second path of detection voltage VDDIO is (VREF/K) M-VDD', and it should be noted that the selected voltage VDD 'needs to be smaller than the difference between the detection voltage VDD and the reference voltage VREF, that is, VREF < VDD-VDD'.
In addition, the equivalent resistance Req is shown in fig. 1 and 2 at the ground pin, but it should be understood that the equivalent resistance Req may also be at the pin to be tested, which does not hinder implementation of the embodiment of the present invention, and the detection flow is similar to the principle.
In addition, the present invention provides a detection method for the detection circuit, as shown in fig. 7, the detection method includes the steps of:
s101, inputting detection voltage through a pin to be detected;
s102, generating a reference voltage through a reference voltage circuit according to the detection voltage;
and S103, comparing the detection voltage with the reference voltage through a voltage detection circuit.
As an example, the comparison performed by the voltage detection circuit according to the detection voltage and the reference voltage is specifically as follows: the voltage value of the reference voltage is read by the amplifier under the detection voltage, the corresponding power supply terminal voltage of the amplifier under the voltage value is calculated, and the voltage is compared with the detection voltage. For details, reference is made to the above examples, which are not repeated herein.
Further, the detection method comprises the following steps: and measuring the detection current of the pin to be detected, and determining the equivalent resistance of the pin according to the detection voltage, the detection current and the voltage value. As mentioned above, the first detection voltage VBAT is (VREF/K) × M, and the equivalent resistance Req is (VDD-VBAT)/I can be obtained by measuring the current of the pin to be measuredTEST，ITESTFor the pin current to be measured, continuing with the above example as an example, the detection voltage is 5V, the reference voltage is 1.25V, the amplifier reading is 388, and the pin current to be measured ITESTAt 10mA, the equivalent resistance Req ═ (5-3.3) V/10mA ═ 170 Ω.
As another example, the comparison performed by the voltage detection circuit according to the detection voltage and the reference voltage specifically includes: the detection voltage is divided by a voltage dividing circuit, and the divided detection voltage is compared with the reference voltage by a comparator. For details, reference is made to the above examples, which are not repeated herein.
Finally, the invention also provides a chip applying the detection circuit and the detection method. The chip divides the predicted detection voltage input into the pin to be detected into two paths, one path of the detection voltage outputs the reference voltage through the reference voltage circuit, the other path of the detection voltage is used as the power supply end of an amplifier in the voltage detection circuit, the voltage value is read through the amplifier, and whether the contact resistance of the pin of the chip and the test socket changes or not is judged according to the comparison between the voltage value and the detection voltage, so that the accuracy of chip test is improved.
While there have been shown and described and pointed out fundamental novel features of the invention as applied to a preferred embodiment thereof, it will be understood that various omissions and substitutions and changes in the form and details of the devices and methods described may be made by those skilled in the art without departing from the spirit of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A pin equivalent resistance detection circuit, the detection circuit comprising:
the input end of the reference voltage circuit is connected with at least one chip pin and used for outputting reference voltage according to detection voltage input by a pin to be detected; and
the voltage detection circuit comprises a first input end and a second input end, the first input end is connected with the output end of the reference voltage circuit, and the second input end is connected with at least one chip pin and used for comparing according to the reference voltage and the detection voltage.
2. The pin equivalent resistance detection circuit according to claim 1, wherein the reference voltage is less than the detection voltage.
3. The pin equivalent resistance detection circuit according to claim 1, wherein said voltage detection circuit comprises an amplifier having an input terminal as said first input terminal and a power supply terminal as said second input terminal for performing voltage value reading of said reference voltage based on said detection voltage.
4. The pin equivalent resistance detection circuit according to claim 1, wherein the voltage detection circuit comprises:
the voltage dividing circuit comprises a first voltage dividing resistor and a second voltage dividing resistor which are connected in series, wherein the input end of the voltage dividing circuit is used as the second input end, and the output end of the voltage dividing circuit is positioned between the first voltage dividing resistor and the second voltage dividing resistor and is used for dividing the detection voltage;
and the comparator is connected with the output end of the voltage division circuit at the inverting input end, is connected with the output end of the reference voltage circuit at the non-inverting input end serving as the first input end, and is used for comparing the output of the voltage division circuit with the reference voltage.
5. The pin equivalent resistance detection circuit according to claim 1, wherein said reference voltage circuit comprises a first resistor, a second resistor, a first current source and a second current source, wherein,
the input end of the first current source is connected with at least one chip pin, and the output end of the first current source is connected with the input end of the first resistor;
the output end of the first resistor is connected with the input end of the second current source;
the input end of the second resistor is connected with at least one chip pin, and the output end of the second resistor is connected with the input end of the second current source;
the output end of the reference voltage circuit is arranged at the input end of the first resistor.
6. The pin equivalence resistance detection circuit of claim 1, wherein said reference voltage circuit is a bandgap reference circuit.
7. A chip using the pin equivalent resistance detection circuit of any one of claims 1-6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023223671.4U CN214252434U (en) | 2020-12-28 | 2020-12-28 | Pin equivalent resistance detection circuit and chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023223671.4U CN214252434U (en) | 2020-12-28 | 2020-12-28 | Pin equivalent resistance detection circuit and chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214252434U true CN214252434U (en) | 2021-09-21 |
Family
ID=77743535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023223671.4U Active CN214252434U (en) | 2020-12-28 | 2020-12-28 | Pin equivalent resistance detection circuit and chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214252434U (en) |
-
2020
- 2020-12-28 CN CN202023223671.4U patent/CN214252434U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100843227B1 (en) | Method for testing semiconductor memory device using probe and the semiconductor memory device using the method | |
| US6441633B1 (en) | High resolution (quiescent) supply current system (IDD monitor) | |
| KR100859242B1 (en) | Semiconductor integrated circuit device | |
| JP2001099894A (en) | Tester | |
| CN105223411A (en) | Overcurrent detection circuit and power supply system | |
| CN108415500A (en) | Low voltage locking circuit and device for integrating reference voltage generating circuit | |
| JP2010175339A (en) | Insulation inspection apparatus | |
| CN214252434U (en) | Pin equivalent resistance detection circuit and chip | |
| CN112945418B (en) | Temperature measuring device and temperature measuring method of integrated chip | |
| CN112798868A (en) | Pin equivalent resistance detection circuit, detection method and chip | |
| US7003424B2 (en) | Temperature detection cell, and method to determine the detection threshold of such a cell | |
| RU2612872C1 (en) | Device for measuring electrical parameters of operational amplifiers and voltage comparators | |
| KR100915931B1 (en) | Semiconductor device and semiconductor measuring device | |
| CN108267663A (en) | Detection device | |
| US20170363682A1 (en) | Testing system, method for testing an integrated circuit and a circuit board including the same | |
| JP2014142303A (en) | Semiconductor device and semiconductor testing system | |
| JP2017175073A (en) | Semiconductor integrated circuit | |
| US11687109B2 (en) | Self-test for low dropout regulator measurement | |
| JP2008140113A (en) | Voltage regulator | |
| US9804630B2 (en) | Adjustable reference current generator, semiconductor device and adjustable reference current generating method | |
| EP1642142A1 (en) | Method and circuit arrangement for the self-testing of a reference voltage in electronic components | |
| KR100476740B1 (en) | Method for testing rlc parallel circuit on the printed circuit board | |
| Siskos et al. | A current conveyor based BIC sensor for current monitoring in mixed-signal circuits | |
| JPS61110064A (en) | Measuring apparatus for circuit constant | |
| CN112462243B (en) | Automatic programming method of open-short circuit test system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |