CN214193512U - 重锤装置和用于晶棒生长的提拉机构 - Google Patents
重锤装置和用于晶棒生长的提拉机构 Download PDFInfo
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- CN214193512U CN214193512U CN202120079282.4U CN202120079282U CN214193512U CN 214193512 U CN214193512 U CN 214193512U CN 202120079282 U CN202120079282 U CN 202120079282U CN 214193512 U CN214193512 U CN 214193512U
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- 239000013078 crystal Substances 0.000 title claims abstract description 63
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 47
- 239000011733 molybdenum Substances 0.000 claims abstract description 47
- 230000002093 peripheral effect Effects 0.000 claims abstract description 13
- 230000000903 blocking effect Effects 0.000 claims abstract description 9
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN202120079282.4U CN214193512U (zh) | 2021-01-12 | 2021-01-12 | 重锤装置和用于晶棒生长的提拉机构 |
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CN202120079282.4U CN214193512U (zh) | 2021-01-12 | 2021-01-12 | 重锤装置和用于晶棒生长的提拉机构 |
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CN214193512U true CN214193512U (zh) | 2021-09-14 |
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CN202120079282.4U Active CN214193512U (zh) | 2021-01-12 | 2021-01-12 | 重锤装置和用于晶棒生长的提拉机构 |
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CN (1) | CN214193512U (zh) |
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2021
- 2021-01-12 CN CN202120079282.4U patent/CN214193512U/zh active Active
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Effective date of registration: 20220628 Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee after: Xi'an yisiwei Material Technology Co.,Ltd. Patentee after: Xi'an yisiwei Equipment Technology Co.,Ltd. Address before: E2-002, science and Technology Park, Xi'an University of technology, No.26, gazelle Road, Zhangba Street office, high tech Zone, Xi'an City, Shaanxi Province, 710000 Patentee before: Xi'an yisiwei Equipment Technology Co.,Ltd. Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: Xi'an Xinhui Equipment Technology Co.,Ltd. Address before: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: Xi'an yisiwei Equipment Technology Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder |