CN214101548U - Image sensor and visual detection device based on polarization - Google Patents
Image sensor and visual detection device based on polarization Download PDFInfo
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- CN214101548U CN214101548U CN202023279559.2U CN202023279559U CN214101548U CN 214101548 U CN214101548 U CN 214101548U CN 202023279559 U CN202023279559 U CN 202023279559U CN 214101548 U CN214101548 U CN 214101548U
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Abstract
The utility model relates to an image sensor and visual detection device based on polarization, the sensor comprises a photosensitive layer, a conversion layer and a processing layer which are overlapped in sequence; the photosensitive layer comprises a plurality of polarization-sensitive semiconductor units which are arranged in an array, and the polarization-sensitive semiconductor units are used for receiving polarized light and generating corresponding current information according to the polarization information of the received polarized light; the conversion layer comprises a plurality of analog-to-digital conversion units, and the current information generated by each polarization sensing semiconductor unit can be received by one analog-to-digital conversion unit so as to be converted into digital information through the analog-to-digital conversion unit; the processing layer is used for receiving the digital information generated by the analog-to-digital conversion unit and generating corresponding image information according to the digital information. The sensor can clearly distinguish different objects in an image formed by polarization information of polarized light, and when the image sensor is applied to visual detection, the sensor can more clearly distinguish different objects, so that the problem of false detection is avoided.
Description
Technical Field
The utility model belongs to machine vision check out test set field especially relates to an image sensor and visual detection device based on polarization.
Background
Most of the existing machine vision detection uses an industrial camera to directly shoot a target object so as to obtain the gray level or RGB image of the target object, and then performs image analysis to realize a corresponding detection function. Because the gray scale or RGB image only contains the light intensity information in the light reflected by the target object, when the light intensities of the light reflected by the two target objects are similar, the reflected light intensities of the two target objects are also very similar in the image shot by the industrial camera, and the false detection can easily occur when the image is used for detection. For example, in semiconductor wafer inspection, the intensities of light reflected by both fine particles and micron-sized dust on the surface of a wafer are similar, so that the intensities of the light reflected by the fine particles and the micron-sized dust are also very similar in an image captured by an industrial camera, and thus the false inspection rate of the wafer inspection is high.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the technical problem that will solve is: the utility model provides an image sensor and visual detection device based on polarization, to when the intensity of the light that reflects at two target objects is similar, because can't distinguish these two target objects in the image that current industry camera was shot, and the problem that leads to the false retrieval.
In order to solve the above technical problem, an embodiment of the present invention provides an image sensor based on polarization, which includes: the photosensitive layer, the conversion layer and the processing layer are sequentially stacked; the photosensitive layer comprises a plurality of polarization-sensitive semiconductor units which are arranged in an array; the polarization sensing semiconductor unit is used for receiving polarized light and generating corresponding current information according to the polarization information of the received polarized light; the conversion layer comprises a plurality of analog-to-digital conversion units, and current information generated by each polarization-sensitive semiconductor unit can be received by one analog-to-digital conversion unit; the analog-to-digital conversion unit comprises an analog-to-digital conversion module and a phase-locked amplification module which are integrated together; the phase-locked amplifying module is used for receiving the current information generated by the polarization induction semiconductor unit and amplifying the received current information; the analog-to-digital conversion module is used for converting the current information amplified by the phase-locked amplification module into digital information; the processing layer is used for receiving the digital information generated by the analog-to-digital conversion unit and generating corresponding image information according to the digital information.
The embodiment of the utility model provides an image sensor can form images according to the polarization information of light, and light is when the object reflection of difference, it is comparatively obvious that its polarization information changes, so the image information who utilizes the polarization information of light to acquire can more clearly distinguish different objects, the event image sensor that obtains through this embodiment shoots can distinguish two objects that the light intensity that reflect is similar (for example can distinguish the dust of the small granule on wafer surface and micron order), when this image sensor is applied to visual inspection, can distinguish different objects or the different characteristics on the same object more clearly, and then improve the precision that detects, avoid the appearance of false retrieval problem.
And simultaneously, the embodiment of the utility model provides an in the image sensor current signal that each polarization response semiconductor unit produced all can be received in order to change by an analog-to-digital conversion unit, can improve the work efficiency of sensor like this, make the sensor reaction more sensitive.
In addition, the phase-locked amplification module is arranged in the analog-to-digital conversion unit to amplify the current signal generated by the polarization induction semiconductor unit, so that the analog-to-digital conversion module can identify the current signal more accurately, and the anti-interference capability of the analog-to-digital conversion unit can be improved.
In order to solve the above technical problem, an embodiment of the present invention further provides a visual inspection apparatus, which includes a light emitting module, a polarization obtaining module, and a control module; the light-emitting module is used for projecting imaging light to a target object; the polarization acquisition module comprises an image sensor, the image sensor is used for receiving the imaging light reflected by the target object and acquiring first image information of the target object according to polarization information in the received imaging light, wherein the image sensor is as described above; the control module can detect a target object according to the first image information.
The embodiment of the utility model provides a visual detection device has adopted foretell image sensor to can distinguish different objects, improve the precision that detects more clearly, avoid the appearance of false retrieval problem.
Drawings
Fig. 1 is a schematic structural diagram of a visual inspection apparatus according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an image sensor of a vision inspection apparatus according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a polarization-sensitive semiconductor unit of a visual inspection apparatus according to an embodiment of the present invention.
The reference numerals in the specification are as follows:
1. a visual inspection device; 2. a target object; 10. a light emitting module; 101. a light emitting unit; 102. a light modulation unit; 20. a polarization acquisition module; 201. a third lens group; 202. an image sensor; 203. a photosensitive layer; 204. a translation layer; 205. a treatment layer; 206. a polarization-sensitive semiconductor unit; 207. an analog-to-digital conversion unit; 208. a control unit; 209. a storage unit; 210. an image processing unit; 211. a substrate layer; 212. a superlattice layer; 213. a buffer layer; 214. a channel layer; 215. an isolation layer; 216. a barrier layer; 217. a cap layer; 218. a two-dimensional electron gas; a 30-phase acquisition module; 301. a second lens group; 302. a wavefront sensor; 40. an amplitude acquisition module; 401. a first lens group; 402. an area-array camera; 50. a control module; 60a, a first spectroscope; 60b, a second spectroscope; 60c, a third spectroscope; 60d light splitting surface; 70. a support platform; 701. a support surface.
Detailed Description
In order to make the technical problem, technical solution and advantageous effects solved by the present invention more clearly understood, the following description is given in conjunction with the accompanying drawings and embodiments to illustrate the present invention in further detail. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, in an embodiment, the visual inspection apparatus 1 includes a lighting module 10, a polarization obtaining module 20, a phase obtaining module 30, an amplitude obtaining module 40, and a control module 50, and the lighting module 10, the polarization obtaining module 20, the phase obtaining module 30, and the amplitude obtaining module 40 may be communicatively connected to the control module 50 through corresponding data lines, so as to control the operations of the lighting module 10, the amplitude obtaining module 40, the phase obtaining module 30, and the polarization obtaining module 20 through the control module 50.
The light emitting module 10 is used for projecting imaging light to a target object, and the imaging light projected on the target object is finally reflected by the target object. The polarization obtaining module 20 may receive the imaging light reflected by the target object, and obtain the image information of the target object according to the light, wherein the polarization obtaining module 20 obtains the first image information of the target object according to the received polarization information of the imaging light. The phase obtaining module 30 may also receive the imaging light reflected by the target object, and obtain the image information of the target object according to the imaging light, wherein the phase obtaining module 30 obtains the second image information of the target object according to the received phase information of the imaging light. The amplitude obtaining module 40 may also receive the imaging light reflected by the target object, and obtain the image information of the target object according to the imaging light, wherein the amplitude obtaining module 40 obtains the third image information of the target object according to the received amplitude information (the amplitude information is the light intensity information) of the imaging light. Each acquisition module transmits the image information about the target object acquired by itself to the control module 50, and the control module 50 fuses the first image information, the second image information and the third image information according to a pre-stored algorithm to form fourth image information.
In the reality scene, when light is reflected by different objects, the comparatively obvious that its polarization information changes, so can catch abundanter object characteristic when utilizing the polarization information of light to acquire the image information of target object, thereby can distinguish different object or the characteristic in the image more clearly, the event can distinguish two similar objects of reflected light intensity (for example can distinguish the dust of the tiny granule on wafer surface and micron order) through the image information that vision detection device 1 shooting that this embodiment provided can distinguish two, and then improve the precision of detection, effectively avoid the appearance of false retrieval problem.
In this embodiment, the fourth image information integrates the advantages of the first image information, the second image information and the third image information, so that the fourth image information can better reflect the real information of the target object, and the detection result can be more accurate when the visual detection device 1 is used to perform the related detection on the target object.
In addition, the visual inspection device 1 can acquire image information of a target object by using amplitude information, phase information and polarization information of light respectively, so that the visual inspection device 1 has a wider application range. For example, in the semiconductor wafer inspection, although the characteristics of the fine particles and the micron-sized dust on the wafer surface are very similar in the third image information, the fine particles and the micron-sized dust on the wafer surface can be easily distinguished from each other in the fourth image because the fine particles and the micron-sized dust on the wafer surface are obviously different in the first image information, so that the problem of false inspection can be avoided. Of course, in the actual use process, also can work through one or two in the three acquisition module of control module group control according to actual demand to improve visual detection device 1's work efficiency.
In one embodiment, the step of the control module 50 fusing the first image information, the second image information and the third image information to form the fourth image information is substantially as follows.
In step S1, the first image information, the second image information, and the third image information are converted into two-dimensional matrices having the same scale.
Step S2, the characteristic normalization operation is carried out on the characteristic values contained in the three two-dimensional matrixes, so that the characteristic value of each matrix meets the distribution rule that the mean value is 0 and the variance is 1, and the influence caused by the difference of units and scales among different optical information characteristics can be eliminated.
And step S3, fusing the three two-dimensional matrixes to generate a three-dimensional feature matrix of n x 3, and then performing pooling operation on the three-dimensional feature along the channel axis direction so as to compress the spatial dimension of the input feature map, thereby realizing the aggregation of the spatial information of three different image information. The pooling operation is to simultaneously adopt maximum pooling and average pooling for the three-dimensional characteristic matrix along the channel axis direction, the maximum pooling extracts the most significant part of the three image information, the average pooling extracts global statistical information of the three image information, and the two pooling modes are adopted simultaneously, so that the characteristic information of a defect target in the three different image information characteristic information can be effectively reserved and fused.
And step S4, performing convolution operation on the feature information obtained by the two pooling operations by using a convolution kernel, and realizing feature fusion to obtain fourth image information. When the target object is detected correspondingly, the fused feature information (i.e., the fourth image information) needs to be input into the convolutional neural network for feature extraction, and then the extracted feature is compared with the pre-stored feature, so as to determine whether the detected feature meets the requirement.
As shown in fig. 1, in an embodiment, the visual inspection device 1 further includes a first spectroscope 60a, a second spectroscope 60b, and a third spectroscope 60 c. The first beam splitter 60a is opposite to the polarization obtaining module 20, and is configured to split the imaging light reflected from the target object to change a propagation path of a part of the imaging light reflected from the target object, and make the part of the imaging light finally enter the polarization obtaining module 20, so that the polarization obtaining module 20 can obtain the first image information of the target object. The second beam splitter 60b is opposite to the phase obtaining module 30, and is configured to split the imaging light reflected from the target object to change a propagation path of a part of the imaging light reflected from the target object, and make the part of the imaging light finally enter the phase obtaining module 30, so that the phase obtaining module 30 can obtain second image information of the target object. The third beam splitter 60c is opposite to the amplitude obtaining module 40, and is configured to split the imaging light reflected from the target object to change a propagation path of a portion of the imaging light reflected from the target object, and make the portion of the imaging light finally enter the amplitude obtaining module 40, so that the amplitude obtaining module 40 can obtain third image information of the target object. The three spectroscopes can enable the acquisition modules to be dispersedly arranged at proper positions, and the sub-acquisition modules can shoot the target object from proper visual angles.
In an actual product, the visual inspection device is also provided with a lens barrel, and the three spectroscopes are all arranged in the lens barrel. The lens cone is made of shading materials, so that external light is prevented from entering the lens cone, and meanwhile, the inner wall of the lens cone is provided with the shading materials, so that the light is prevented from being reflected on the inner wall of the lens cone. In addition, the lens cone is provided with three openings, each opening corresponds to one spectroscope, the opening is provided with a one-way light-transmitting plate, the one-way light-transmitting plate seals the opening, external light can be prevented from entering the inside of the lens cone through the one-way light-transmitting plate, light inside the lens cone can be transmitted out of the lens cone, and during detection, the light separated by each reflector can be emitted out of the lens cone from the corresponding opening to be transmitted to the corresponding acquisition module. In an embodiment, the one-way light-transmitting plate may be a glass plate provided with a corresponding coating or a resin plate provided with a corresponding coating, or the like.
As shown in fig. 1, in an embodiment, the light emitting module 10 includes a light emitting unit 101 and a light modulating unit. The light modulation unit 102 is opposite to the light emitting unit 101, and is configured to modulate the imaging light projected by the light emitting unit 101 to the target object, so that the polarization state of the imaging light is adjusted to a suitable state and then projected to the target object (for example, the polarization state of the imaging light is adjusted to be circular polarization), where the light modulation unit 102 may be a transmissive spatial light modulator. During detection, the amplitude, the phase and the polarization state of the laser beam can be adjusted initially according to the approximate material shape characteristic of the target to be detected, so that the quality of the acquired image information is improved.
In an actual product, the visual inspection apparatus 1 further includes a machine, and the light-emitting module 10, the amplitude obtaining module 40, the phase obtaining module 30, the polarization obtaining module 20, the control module 50, and the beam splitters are all mounted on the machine. In addition, the visual inspection device 1 further includes a supporting platform 70, the supporting platform 70 is also disposed on the machine platform, the supporting platform 70 has a supporting surface 81, and the supporting surface 81 is opposite to the light emitting module 10, so that the light emitting module 10 can project imaging light to a target object placed on the supporting surface 81.
In an embodiment, the polarization obtaining module 20 includes a first lens group 201 and a polarization-based image sensor 202, and the image sensor 202 is a polarization-based image sensor for obtaining corresponding image information according to polarization information of light. Imaging light reflected from a target object is transmitted to the first lens group 201, focused by the first lens group 201, and then transmitted to the image sensor 202; the image sensor 202 may acquire polarization information of the imaging light focused by the first lens group 201 to obtain first image information of the target object.
In one embodiment, the phase obtaining module 30 includes a second lens group 301 and a wavefront sensor 302; imaging light reflected from a target object is transmitted to the second lens group 301, focused by the second lens group 301 and then transmitted to the wavefront sensor 302; the wavefront sensor 302 may acquire phase information of the imaging light focused by the second lens group 301 to obtain second image information of the target object.
In one embodiment, the amplitude acquiring module 40 includes a third lens group 401 and an area-array camera 402; imaging light reflected from a target object is transmitted to the third lens group 401, focused by the third lens group 401, and then transmitted to the area-array camera 402; the area-array camera 402 may acquire amplitude information of the imaging light focused by the third lens group 401 to obtain third image information of the target object.
As shown in fig. 2, in an embodiment, the image sensor 202 includes a photosensitive layer 203, a conversion layer 204, and a processing layer 205, which are sequentially stacked. The photosensitive layer 203 is configured to generate corresponding current information according to the received imaging light, the current information is transmitted to the conversion layer 204, the conversion layer 204 converts the current information into a digital signal, the digital information is transmitted to the processing layer 205, the processing layer 205 processes the digital information to obtain digital image information of the target object, and the digital image information is the first image information. In an actual product, the imaging light may be circularly polarized light, that is, the polarization state of the imaging light emitted from the light emitting unit 101 is modulated into a circular polarization state by the light modulating unit 102.
As shown in fig. 2, in an embodiment, the photosensitive layer 203 has polarization-sensitive semiconductor units 206 arranged in an array, after receiving the circularly polarized light, the polarization-sensitive semiconductor units 206 generate corresponding current information due to polarization induced current effect, and the current information generated by each polarization-sensitive semiconductor unit 206 is transmitted to the conversion layer 204. After receiving the corresponding polarized imaging light, the polarization-sensitive semiconductor unit 206 generates corresponding current information due to the polarization induced current effect. For example, when the imaging light is circularly polarized light, the polarization-sensitive semiconductor unit 206 generates corresponding current information due to a circularly polarized light induced current effect (CPGE).
In one embodiment, the gap between two adjacent polarization-sensing semiconductor units 206 in the array of polarization-sensing semiconductor units 206 is a channel for accommodating a current signal, wherein the spacing between two adjacent polarization-sensing semiconductor units 206 (i.e., the width of the gap) is generally set between 50nm and 100nm, and preferably, the gap width is set to 80 nm.
In addition, in one embodiment, the length and width of the polarization-sensitive semiconductor unit 206 are equal, and the length of the polarization-sensitive semiconductor unit 206 should be 3um to 5 um; the length direction of the polarization-sensitive semiconductor unit 206 is parallel to the X-axis direction, the width direction of the polarization-sensitive semiconductor unit 206 is parallel to the Y-axis direction, and the stacking direction of the photosensitive layer 203, the conversion layer 204, and the processing layer 205 is parallel to the Z-axis direction, i.e. the length direction and the width direction of the polarization-sensitive semiconductor unit 206 are perpendicular to each other, and both are perpendicular to the stacking direction of the layers of the image sensor 202.
As shown in fig. 3, in one embodiment, the polarization-sensitive semiconductor unit 206 includes a substrate layer 211, a superlattice layer 212, a buffer layer 213, a channel layer 214, an isolation layer 215, a barrier layer 216, and a cap layer 217, which are stacked in this order. The substrate layer 211 is used as a carrier and an epitaxial growth base of the polarization-sensitive semiconductor unit; superlattice layer 212 is used to block defects in the substrate from extending with epitaxial growth; the buffer layer 213 is used for reducing the influence of defects in the substrate layer 211 on the channel layer 214, and meanwhile, a high-quality epitaxial growth surface can be obtained through the arrangement of the buffer layer 213; the channel layer 214 serves as a channel for movement of electrons; the spacer layer 215 serves to separate the barrier layer 216 from the channel layer 214 to reduce ionized impurity scattering and improve electron mobility of the channel layer 214, and in addition, a two-dimensional electron gas 218 is formed at a region where the spacer layer 215 and the channel layer 214 are in contact. The barrier layer 216 acts as an ionization donor to provide electrons for the formation of a two-dimensional electron gas 218; si delta-doping also reduces the scattering of ionized impurities to the two-dimensional electron gas 218; the cap layer 217 serves to protect the barrier layer 216 and to form an ohmic contact with the barrier layer 216.
In an embodiment, the substrate layer 211, the superlattice layer 212, the buffer layer 213, the channel layer 214, and the cap layer 217 are made of GaAs, so that the material types required for manufacturing the polarization-sensitive semiconductor unit 206 can be reduced, and the manufacturing of the polarization-sensitive semiconductor unit 206 is facilitated. In practice, the purity of GaAs of the channel layer 214 is greater than that of the buffer layer 213, which is more favorable for movement of electrons. Meanwhile, the purity requirement of GaAs on the buffer layer 213 can be properly reduced, and the difficulty in manufacturing the polarization-sensitive semiconductor unit 206 can be reduced to a certain extent. In addition, in one embodiment, the isolation layer 215 is made of undoped AlxGa1-xAs, the barrier layer 216 is made of Al doped with Si deltaxGa1-xAs, which also reduces the amount of material needed to fabricate the polarization-sensitive semiconductor unit 206, wherein AlxGa1-xAs may be Al0.3Ga0.7As, and the like.
In addition, in an actual product, the thickness of the substrate layer 211 ranges from 600um to 1000um, and may be preferably set to 800 um. The thickness of the superlattice layer 212 is in the range of 100nm to 300nm, and preferably may be set to 200 nm. The thickness of the buffer layer 213 is in the range of 500nm to 1500nm, and preferably, may be set to 1000 nm. The thickness of the channel layer 214 ranges from 20nm to 50nm, and may be preferably set to 30 nm. The thickness of the spacer layer 215 is in the range of 5nm to 15nm, and preferably may be set to 10 nm. The thickness of the barrier layer 216 is in the range of 30nm to 80nm, and preferably, may be set to 50 nm. The capping layer 217 has a thickness in the range of 20nm to 50nm, and preferably may be set to 30 nm.
In an embodiment, the conversion layer 204 includes a plurality of analog-to-digital conversion units 207, and each analog-to-digital conversion unit 207 is configured to receive current information generated by one polarization-sensitive semiconductor unit 206 and convert the current information into corresponding digital information, so as to improve the operating efficiency of the image sensor 202 and make the sensor response more sensitive. In an embodiment, the analog-to-digital conversion unit 207 includes an analog-to-digital conversion module and a phase-locked amplification module, and the phase-locked amplification module is configured to receive the current information generated by the polarization-sensitive semiconductor unit 206 and amplify the received current information; the analog-to-digital conversion module is used for converting the current information amplified by the phase-locked amplification module into digital information. The arrangement of the phase-locked amplification module not only can enable the analog-to-digital conversion unit 207 to identify the current signal more accurately, but also can improve the anti-interference capability of the analog-to-digital conversion unit 207.
As shown in fig. 2, in one embodiment, the processing layer 205 includes a control unit 208, a memory unit 209, and an image processing unit 210. The control unit 208 may sequentially receive the digital information generated by each analog-to-digital conversion module according to a predetermined sequence, and may sequentially store the received digital information in the storage unit 209, and after the digital signals are stored, the image processing unit 210 may perform zero offset correction, filtering, and the like on the digital signals to obtain the first image information.
In one embodiment, the resolution of the first image information is the same as the density of the array of polarization-sensitive semiconductor units 206, i.e., each polarization-sensitive semiconductor unit corresponds to a pixel in the first image information. The pixel gray scale of the first image information is related to the channel number of the analog-to-digital conversion module. For example, when the number of channels of the analog-to-digital conversion module is 12 channels, the pixel gray scale is 4096; when the number of channels of the analog-to-digital conversion module is 8, the pixel gray scale is 256.
In addition, when the polarization-sensitive semiconductor cell 206 is irradiated with circularly polarized light, a photon drawing effect is generated in addition to a circularly polarized light current effect. Since the photo-induced current effect and the photon pulling effect have similar dependence on the symmetry of the material structure, both will usually exist at the same time, thereby affecting the sensitivity of the image sensor 202.
To address this issue, in one embodiment, the polarization-sensitive semiconductor unit 206 is C2vA symmetrical semiconductor two-dimensional electron gas (2DEG), the semiconductor cell may be a GaAs/AlGaAs two-dimensional electron gas, which may be grown on a semi-insulating GaAs substrate using Molecular Beam Epitaxy (MBE). The CPGE current has strong dependence on the circular polarization degree and the incident angle of incident light and has C2vThe CPGE can only be generated by the excitation of obliquely incident circularly polarized light due to the symmetrical semiconductor two-dimensional electron gas structure. For the vertically incident circularly polarized light, since the excited spin-polarized electrons are symmetrically distributed in the K space, the polarization-sensitive semiconductor unit 206 does not generate corresponding current information.
Thus, in an actual product, by properly positioning the image sensor 202, when no target object is placed on the supporting surface 701, the imaging light emitted from the light emitting module 10 can be vertically emitted to the polarization-sensitive semiconductor unit 206 after being reflected by the supporting surface 701 and split by the first beam splitter 60 a. At this time, the polarization sensing semiconductor unit 206 only collects the macro current information generated by the photon pulling effect, the digital information converted by the analog-to-digital conversion unit 207 from the macro current information can be stored in the storage unit 209 as a reference value, and when the subsequent image sensor 202 normally operates, the difference operation can be performed between the actual measurement value and the reference value, so that the adverse effect of the photon pulling effect on the sensitivity of the image sensor 202 can be reduced.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A polarization-based image sensor, comprising: the photosensitive layer, the conversion layer and the processing layer are sequentially stacked;
the photosensitive layer comprises a plurality of polarization-sensitive semiconductor units which are arranged in an array; the polarization sensing semiconductor unit is used for receiving polarized light and generating corresponding current information according to the polarization information of the received polarized light;
the conversion layer comprises a plurality of analog-to-digital conversion units, and current information generated by each polarization-sensitive semiconductor unit can be received by one analog-to-digital conversion unit; the analog-to-digital conversion unit comprises an analog-to-digital conversion module and a phase-locked amplification module which are integrated together; the phase-locked amplifying module is used for receiving the current information generated by the polarization induction semiconductor unit and amplifying the received current information; the analog-to-digital conversion module is used for converting the current information amplified by the phase-locked amplification module into digital information;
the processing layer is used for receiving the digital information generated by the analog-to-digital conversion unit and generating corresponding image information according to the digital information.
2. The polarization-based image sensor of claim 1, wherein the processing layer comprises a control module, a storage module, and an image processing module;
the control module is used for receiving the digital information generated by each analog-to-digital conversion unit and sequentially storing the received digital information in the storage module;
the image processing module is used for processing the digital information stored in the storage module to generate image information.
3. The polarization-based image sensor of claim 1, wherein the polarizationThe sensing semiconductor unit is C2vA symmetric semiconductor two-dimensional electron gas.
4. The polarization-based image sensor of claim 1, wherein the polarization-sensitive semiconductor unit comprises a substrate layer, a superlattice layer, a buffer layer, a channel layer, an isolation layer, a barrier layer, and a cap layer, which are stacked in sequence;
the substrate layer is used as a basis for epitaxial growth;
the superlattice layer is used for preventing defects in the substrate layer from extending along with epitaxial growth;
the buffer layer is used for reducing the influence of defects in the substrate layer on the channel layer;
the channel layer is used for providing a channel for electron movement;
the isolating layer is used for separating the barrier layer from the channel layer so as to reduce ionized impurity scattering and improve the electron mobility of the channel layer; wherein, the two-dimensional electron gas is formed in the connecting area of the isolating layer and the channel layer;
the barrier layer is used for providing electrons for the formation of two-dimensional electron gas;
the cap layer is used for protecting the barrier layer.
5. The polarization based image sensor of claim 4, wherein the buffer layer is a GaAs layer and the channel layer is a GaAs layer, the purity of the GaAs in the channel layer being greater than the purity of the GaAs in the buffer layer.
6. The polarization-based image sensor of claim 5, wherein the buffer layer has a thickness of 500nm to 1500nm and the channel layer has a thickness of 20nm to 50 nm.
7. The polarization-based image sensor of claim 1, wherein a spacing between two adjacent polarization-sensing semiconductor units is between 50nm and 100 nm.
8. The polarization based image sensor of claim 1, wherein the polarization sensing semiconductor cells are equal in length and width, the polarization sensing semiconductor cells being 3um-5um in length; the length direction of the polarization induction semiconductor unit is parallel to the X-axis direction, the width direction of the polarization induction semiconductor unit is parallel to the Y-axis direction, and the lamination direction of the photosensitive layer, the conversion layer and the processing layer is parallel to the Z-axis direction.
9. A visual detection device is characterized by comprising a light-emitting module, a polarization acquisition module and a control module;
the light-emitting module is used for projecting imaging light to a target object;
the polarization acquisition module comprises an image sensor, the image sensor is used for receiving the imaging light reflected by the target object and acquiring first image information of the target object according to polarization information in the received imaging light, wherein the image sensor is as claimed in any one of claims 1 to 8;
the control module can detect a target object according to the first image information.
10. The visual inspection device of claim 9, further comprising a phase acquisition module and an amplitude acquisition module;
the phase acquisition module is used for receiving the imaging light reflected by the target object and acquiring second image information of the target object according to the received phase information of the imaging light;
the amplitude acquisition module is used for receiving the imaging light reflected by the target object and acquiring third image information of the target object according to the received amplitude information of the imaging light;
the control module can fuse the first image information, the second image information and the third image information to form fourth image information, so that the control module can detect a target object according to the fourth image information.
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