CN214099641U - Solar cell silicon wafer phosphorus source concentration improvement diffusion device - Google Patents

Solar cell silicon wafer phosphorus source concentration improvement diffusion device Download PDF

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Publication number
CN214099641U
CN214099641U CN202120028792.9U CN202120028792U CN214099641U CN 214099641 U CN214099641 U CN 214099641U CN 202120028792 U CN202120028792 U CN 202120028792U CN 214099641 U CN214099641 U CN 214099641U
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diffusion
mechanisms
arc
solar cell
silicon wafer
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王泉龙
李琪
孙珠珠
周国栋
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Xuzhou Zhonghui Photovoltaic Technology Co ltd
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Xuzhou Zhonghui Photovoltaic Technology Co ltd
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Abstract

The utility model discloses a solar cell silicon wafer phosphorus source concentration improvement diffusion device, which belongs to the technical field of solar cell wafer production equipment and comprises a diffusion furnace tube, wherein the upper side in the diffusion furnace tube is provided with a diffusion spray tube arranged along the length direction of the diffusion furnace tube, the bottom end of the diffusion spray tube is provided with a plurality of spray holes arranged along the length direction, the spray holes are arranged at equal intervals, the lower side in the diffusion furnace tube is provided with a plurality of first diffusion mechanisms and second diffusion mechanisms arranged along the length direction, the first diffusion mechanisms and the second diffusion mechanisms are arranged in a staggered manner, and the first diffusion mechanisms and the second diffusion mechanisms are arranged in a joint manner, so that the diffusion of airflow can be accelerated by using the diffusion structures with special shapes, the uniform distribution of the airflow can be ensured, and the diffusion uniformity of the solar cell silicon wafer can be ensured, the diffusion effect and efficiency of the solar cell silicon wafer are greatly improved.

Description

Solar cell silicon wafer phosphorus source concentration improvement diffusion device
Technical Field
The utility model relates to a solar wafer production facility technical field, more specifically say, relate to solar cell silicon chip phosphorus source concentration improves diffusion equipment.
Background
The solar cell is a device for directly converting solar energy into electric energy, and mainly converts the solar energy into the electric energy by using a photovoltaic effect of a PN junction. Solar power generation has become an important power generation form because solar cells have the characteristics of cleanness, no pollution, abundant resources and the like. With the progress of the process technology, the working efficiency of the solar cell is continuously improved. With the gradual depletion of conventional energy and the increasing demand for energy, mankind is faced with an increasingly serious energy crisis, and the development of solar cells is one of the approaches to solve the above problems. In the production process of the crystalline silicon solar cell, the diffusion equipment is important equipment for preparing the PN junction in the diffusion process, and the diffusion equipment is mainly used as a reaction cavity in the silicon wafer diffusion process.
In the manufacturing process of the crystalline silicon solar cell, the silicon wafer diffusion process is to place the silicon wafer into a high-temperature diffusion furnace, introduce nitrogen, oxygen, phosphorus oxychloride and other gases, perform chemical reaction at high temperature, diffuse, and form a PN junction on the surface of the silicon wafer. Specifically, a silicon wafer is inserted into a quartz boat, then the quartz boat is placed into a high-temperature diffusion furnace (generally, a diffusion quartz tube), gas containing a diffusion source is introduced, the diffusion source reacts with the silicon wafer under a high-temperature condition, and a diffusion process is realized, so that a PN junction is formed.
The existing diffusion furnace reaction cavity comprises a cylindrical diffusion furnace tube, an air inlet pipe for introducing nitrogen, oxygen and phosphorus sources into the diffusion furnace tube is arranged on the circular end face at the bottom of the diffusion furnace tube, a thermocouple tube for monitoring the temperature in the diffusion furnace tube and an exhaust pipe for discharging waste gas in the diffusion furnace tube, the air inlet pipe is positioned at the central position of the circular end face, the thermocouple tube and the exhaust pipe are both positioned at the bottom end position of the circular end face, the existing diffusion furnace tube cannot realize uniform distribution of airflow during diffusion, the uniformity of diffusion is influenced, meanwhile, airflow automatically diffuses under high temperature during diffusion, no external factor promotes diffusion, and the diffusion efficiency is poor.
SUMMERY OF THE UTILITY MODEL
1. Technical problem to be solved
To the problem that exists among the prior art, the utility model aims to provide a solar cell silicon chip phosphorus source concentration improves diffusion equipment, can realize utilizing the diffusion structure of special shape diffusion of air current with higher speed, can guarantee the evenly distributed of air current simultaneously, has guaranteed the diffusion homogeneity of solar cell silicon chip, great promotion the diffusion effect and the efficiency of solar cell silicon chip.
2. Technical scheme
In order to solve the above problems, the utility model adopts the following technical proposal.
The solar cell silicon wafer phosphorus source concentration improvement diffusion device comprises a diffusion furnace tube, wherein the upper side in the diffusion furnace tube is provided with a diffusion spray pipe arranged along the length direction of the diffusion furnace tube, the bottom end of the diffusion spray pipe is provided with a plurality of spray holes arranged along the length direction of the diffusion spray pipe, the spray holes are arranged at equal intervals, the inner part of the diffusion furnace tube, which is positioned at the lower side of the diffusion spray pipe, is provided with a plurality of first diffusion mechanisms and second diffusion mechanisms arranged along the length direction of the diffusion spray pipe, the first diffusion mechanisms and the second diffusion mechanisms are arranged in a staggered manner and are arranged in a joint manner, the first diffusion mechanisms and the second diffusion mechanisms are identical in structure, the first diffusion mechanisms and the second diffusion mechanisms respectively comprise two arc-shaped diffusion plates and two transverse plates connected with the arc-shaped diffusion plates, and the transverse plates are arranged in a joint manner with the diffusion spray pipe, the center department of diaphragm has seted up the diffusion hole, and the diffusion hole sets up with the hole one-to-one that sprays, the top bore in diffusion hole is the same with the hole that sprays, the both ends bore in diffusion hole is the same and the intermediate position bore is half of tip, two be fixed with the dead lever between the arc diffuser plate, and the center department of dead lever is fixed with the electro-magnet, still be connected with extension spring, a plurality of between arc diffuser plate and the diffusion shower the electro-magnet series connection in the first diffusion mechanism, the electro-magnet series connection in the second diffusion mechanism, the outer wall top of diffusion boiler tube still is fixed with the arc permanent magnet, the magnetic field that forms when the electro-magnet circular telegram repels mutually with the magnetic field of arc permanent magnet. When the device works, gas containing a phosphorus source, oxygen and nitrogen are mixed and introduced into the diffusion spray pipe and are sprayed out from the spray holes to diffuse the solar cell silicon wafer on the quartz boat, because the diffusion holes are correspondingly arranged at the lower sides of the spray holes, when the gas flow enters the diffusion holes and passes through the middle section, the aperture of the middle section of the diffusion holes is reduced, the gas flow is accelerated, so that the diffusion efficiency is effectively improved, the lower half section of the diffusion holes is horn-shaped, meanwhile, the two arc-shaped diffusion plates form an arc-shaped structure, the gas flow is diffused in an umbrella-shaped manner when sprayed out from the diffusion holes, so that the gas flow is distributed more uniformly, the diffusion uniformity is ensured, the diffusion efficiency is further improved, when in diffusion, the electromagnets on the first diffusion mechanism and the second diffusion mechanism are controlled to be alternately electrified, a magnetic field generated behind the electromagnets is repelled with the arc-shaped permanent magnets, so that the first diffusion mechanism and the second diffusion mechanism can alternately move up and down, when first diffusion mechanism or second diffusion mechanism moved down, can exert decurrent power to the air current, further acceleration diffusion efficiency, under the same phosphorus source concentration, the diffusion effect of this device is better, efficiency is higher. The diffusion of the airflow can be accelerated by using the diffusion structure with a special shape, the uniform distribution of the airflow can be ensured, the diffusion uniformity of the solar cell silicon wafer is ensured, and the diffusion effect and efficiency of the solar cell silicon wafer are greatly improved.
Further, arc diffuser plate and diaphragm integrated into one piece set up, guarantee the structural strength of the diffuser plate that arc diffuser plate and diaphragm formed, promote stability.
Furthermore, all cover on the outer wall of arc diffuser plate and diaphragm and have corrosion-resistant cladding material, effectively avoid arc diffuser plate and diaphragm to receive the corruption, increase of service life.
Furthermore, the end wall of the arc-shaped diffusion plate is pasted with a corrosion-resistant sealing rubber pad, so that the sealing performance of the first diffusion mechanism and the second diffusion mechanism when the first diffusion mechanism and the second diffusion mechanism are attached to each other is guaranteed, and the diffusion effect is guaranteed.
Furthermore, the end part of the arc diffusion plate adopts arc transition, so that the scraping phenomenon generated when the first diffusion mechanism and the second diffusion mechanism move up and down is avoided.
3. Advantageous effects
Compared with the prior art, the utility model has the advantages of:
(1) the diffusion of the airflow can be accelerated by using the diffusion structure with a special shape, the uniform distribution of the airflow can be ensured, the diffusion uniformity of the solar cell silicon wafer is ensured, and the diffusion effect and efficiency of the solar cell silicon wafer are greatly improved.
(2) Arc diffuser plate and diaphragm integrated into one piece set up, guarantee the structural strength of the diffuser plate that arc diffuser plate and diaphragm formed, promote stability.
(3) All cover on the outer wall of arc diffuser plate and diaphragm and have corrosion-resistant cladding material, effectively avoid arc diffuser plate and diaphragm to receive the corruption, increase of service life.
(4) The end wall of the arc-shaped diffusion plate is pasted with a corrosion-resistant sealing rubber pad, so that the sealing performance of the first diffusion mechanism and the second diffusion mechanism when the first diffusion mechanism and the second diffusion mechanism are attached to each other is guaranteed, and the diffusion effect is guaranteed.
(5) The tip of arc diffuser plate adopts the circular arc transition, produces the scraping phenomenon when avoiding first diffusion mechanism and second diffusion mechanism to reciprocate.
Drawings
Fig. 1 is a cross-sectional view of the present invention;
FIG. 2 is a schematic structural view of a first diffusion mechanism of the present invention;
FIG. 3 is a schematic structural view of a diffusion hole of the present invention;
FIG. 4 is a schematic view of the present invention when the airflow is diffused;
fig. 5 is a state diagram of the first diffusion mechanism of the present invention during operation.
The reference numbers in the figures illustrate:
1 diffusion furnace tube, 2 diffusion shower, 3 shower holes, 4 first diffusion mechanisms, 5 second diffusion mechanisms, 6 quartz boats, 7 arc-shaped diffusion plates, 8 transverse plates, 9 diffusion holes, 10 fixing rods, 11 electromagnets, 12 arc-shaped permanent magnets and 13 extension springs.
Detailed Description
The drawings in the embodiments of the present invention will be combined; the technical scheme in the embodiment of the utility model is clearly and completely described; obviously; the described embodiments are only some of the embodiments of the present invention; but not all embodiments, are based on the embodiments of the invention; all other embodiments obtained by a person skilled in the art without making any inventive step; all belong to the protection scope of the utility model.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "top/bottom", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted", "provided", "sleeved/connected", "connected", and the like are to be understood in a broad sense, such as "connected", which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1:
referring to fig. 1-5, the diffusion device for increasing the phosphorus source concentration of a solar cell silicon wafer comprises a diffusion furnace tube 1, a diffusion shower tube 2 disposed along the length direction of the diffusion furnace tube 1 is disposed on the upper side inside the diffusion furnace tube 1, a plurality of shower holes 3 disposed along the length direction are disposed at the bottom end of the diffusion shower tube 2, the shower holes 3 are disposed at equal intervals, a plurality of first diffusion mechanisms 4 and second diffusion mechanisms 5 disposed along the length direction are disposed on the lower side of the diffusion shower tube 2 inside the diffusion furnace tube 1, the first diffusion mechanisms 4 and the second diffusion mechanisms 5 are staggered, the first diffusion mechanisms 4 and the second diffusion mechanisms 5 are attached to each other, the first diffusion mechanisms 4 and the second diffusion mechanisms 5 have the same structure, the first diffusion mechanisms 4 and the second diffusion mechanisms 5 both comprise two arc-shaped diffusion plates 7 and transverse plates 8 connected with the arc-shaped diffusion plates 7, and the transverse plate 8 is attached to the diffusion spray pipes 2, diffusion holes 9 are formed in the center of the transverse plate 8, the diffusion holes 9 and the spray holes 3 are arranged in a one-to-one correspondence mode, the top end apertures of the diffusion holes 9 are the same as those of the spray holes 3, the apertures of the two ends of each diffusion hole 9 are the same, the aperture of the middle position of each diffusion hole 9 is half of that of the end portion, a fixing rod 10 is fixed between the two arc-shaped diffusion plates 7, electromagnets 11 are fixed at the center of the fixing rod 10, extension springs 13 are connected between the arc-shaped diffusion plates 7 and the diffusion spray pipes 2, the electromagnets 11 on the first diffusion mechanisms 4 are connected in series, the electromagnets 11 on the second diffusion mechanisms 5 are connected in series, arc-shaped permanent magnets 12 are fixed at the top ends of the outer walls of the diffusion furnace tubes 1, and a magnetic field formed when the electromagnets 11 are electrified is repulsive to the magnetic fields of the arc-shaped permanent magnets 12.
When the device works, gas containing a phosphorus source, oxygen and nitrogen are mixed and introduced into the diffusion spraying pipe 2, and are sprayed out from the spraying holes 3 to diffuse the solar cell silicon wafer on the quartz boat 6, because the diffusion holes 9 are correspondingly arranged at the lower sides of the spraying holes 3, when the gas flow enters the diffusion holes 9 and passes through the middle section, the aperture of the middle section of each diffusion hole 9 is reduced, the gas flow is accelerated, so that the diffusion efficiency is effectively improved, the lower half section of each diffusion hole 9 is horn-shaped, meanwhile, the two arc-shaped diffusion plates 7 form an arc-shaped structure, and the gas flow is diffused in an umbrella shape when sprayed out from the diffusion holes 9, so that the gas flow is distributed more uniformly, the diffusion uniformity is ensured, and the diffusion efficiency is further improved;
referring to fig. 5, while diffusing, the electromagnets 11 on the first diffusion mechanism 4 and the second diffusion mechanism 5 are controlled to be alternately energized, and a magnetic field generated behind the electromagnets 11 repels the arc-shaped permanent magnet 12, so that the first diffusion mechanism 4 and the second diffusion mechanism 5 alternately move up and down, and when the first diffusion mechanism 4 or the second diffusion mechanism 5 moves down, a downward force is applied to the airflow, thereby further accelerating the diffusion efficiency. The diffusion of the airflow can be accelerated by using the diffusion structure with a special shape, the uniform distribution of the airflow can be ensured, the diffusion uniformity of the solar cell silicon wafer is ensured, and the diffusion effect and efficiency of the solar cell silicon wafer are greatly improved.
Referring to fig. 2, the arc-shaped diffusion plate 7 and the horizontal plate 8 are integrally formed, so that the structural strength of the diffusion plate formed by the arc-shaped diffusion plate 7 and the horizontal plate 8 is ensured, and the stability is improved.
Referring to fig. 2, the outer walls of the arc diffusion plate 7 and the horizontal plate 8 are covered with corrosion-resistant coatings, so that the arc diffusion plate 7 and the horizontal plate 8 are effectively prevented from being corroded, and the service life is prolonged.
Referring to fig. 1-2, a corrosion-resistant sealing rubber gasket is adhered to the end wall of the arc-shaped diffusion plate 7 to ensure the sealing performance and diffusion effect when the first diffusion mechanism 4 and the second diffusion mechanism 5 are adhered to each other.
Referring to fig. 2, the end of the arc diffuser 7 is in arc transition to avoid scraping when the first diffuser 4 and the second diffuser 5 move up and down.
The above; is only a preferred embodiment of the present invention; however, the scope of protection of the present invention is not limited thereto; any person skilled in the art is within the technical scope of the present disclosure; according to the technical scheme of the utility model and the improvement conception, equivalent substitution or change is carried out; are all covered by the protection scope of the utility model.

Claims (5)

1. Solar cell silicon chip phosphorus source concentration improves diffusion equipment, including diffusion boiler tube (1), the inside upside of diffusion boiler tube (1) is equipped with along diffusion boiler tube (1) length direction setting diffusion shower (2), its characterized in that: the bottom end of the diffusion spray pipe (2) is provided with a plurality of spray holes (3) arranged along the length direction of the diffusion spray pipe, the spray holes (3) are arranged at equal intervals, the diffusion furnace pipe (1) is internally provided with a plurality of first diffusion mechanisms (4) and second diffusion mechanisms (5) arranged along the length direction of the diffusion spray pipe (2) and positioned at the lower side of the diffusion spray pipe, the first diffusion mechanisms (4) and the second diffusion mechanisms (5) are arranged in a staggered manner, the first diffusion mechanisms (4) and the second diffusion mechanisms (5) are arranged in a laminating manner, the first diffusion mechanisms (4) and the second diffusion mechanisms (5) have the same structure, the first diffusion mechanisms (4) and the second diffusion mechanisms (5) respectively comprise two arc-shaped diffusion plates (7) and transverse plates (8) connected with the two arc-shaped diffusion plates (7), and the transverse plates (8) are arranged in a laminating manner with the diffusion spray pipe (2), diffusion holes (9) are arranged at the center of the transverse plate (8), the diffusion holes (9) are arranged in one-to-one correspondence with the spraying holes (3), the top end caliber of the diffusion hole (9) is the same as that of the spraying hole (3), the calibers of the two ends of the diffusion hole (9) are the same, the caliber of the middle position is half of that of the end part, a fixed rod (10) is fixed between the two arc diffusion plates (7), an electromagnet (11) is fixed at the center of the fixed rod (10), an extension spring (13) is connected between the arc diffusion plate (7) and the diffusion spray pipe (2), the electromagnets (11) on the first diffusion mechanisms (4) are connected in series, electromagnets (11) on the second diffusion mechanism (5) are connected in series, an arc permanent magnet (12) is fixed at the top end of the outer wall of the diffusion furnace tube (1), the magnetic field formed when the electromagnet (11) is electrified is mutually repelled with the magnetic field of the arc-shaped permanent magnet (12).
2. The device for increasing the phosphorus source concentration and diffusing of the solar cell silicon wafer according to claim 1, wherein: arc diffuser plate (7) and diaphragm (8) integrated into one piece set up.
3. The device for increasing the phosphorus source concentration and diffusing of the solar cell silicon wafer according to claim 1, wherein: and the outer walls of the arc diffusion plate (7) and the transverse plate (8) are covered with corrosion-resistant coatings.
4. The device for increasing the phosphorus source concentration and diffusing of the solar cell silicon wafer according to claim 1, wherein: and a corrosion-resistant sealing rubber pad is adhered to the end wall of the arc-shaped diffusion plate (7).
5. The device for increasing the phosphorus source concentration and diffusing of the solar cell silicon wafer according to claim 1, wherein: the end part of the arc diffusion plate (7) adopts arc transition.
CN202120028792.9U 2021-01-07 2021-01-07 Solar cell silicon wafer phosphorus source concentration improvement diffusion device Active CN214099641U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202120028792.9U CN214099641U (en) 2021-01-07 2021-01-07 Solar cell silicon wafer phosphorus source concentration improvement diffusion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202120028792.9U CN214099641U (en) 2021-01-07 2021-01-07 Solar cell silicon wafer phosphorus source concentration improvement diffusion device

Publications (1)

Publication Number Publication Date
CN214099641U true CN214099641U (en) 2021-08-31

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CN202120028792.9U Active CN214099641U (en) 2021-01-07 2021-01-07 Solar cell silicon wafer phosphorus source concentration improvement diffusion device

Country Status (1)

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