CN214088736U - Supplementary doping device and czochralski crystal growing furnace - Google Patents
Supplementary doping device and czochralski crystal growing furnace Download PDFInfo
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- CN214088736U CN214088736U CN202022392105.XU CN202022392105U CN214088736U CN 214088736 U CN214088736 U CN 214088736U CN 202022392105 U CN202022392105 U CN 202022392105U CN 214088736 U CN214088736 U CN 214088736U
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Abstract
The utility model relates to a monocrystalline silicon produces technical field, discloses a supplementary doping device and straight single crystal growing furnace, and supplementary doping device is used for straight single crystal growing furnace, including storage portion, connecting rod and outer switching portion, wherein, the one end of outer switching portion be used for with straight single crystal growing furnace connects, the other end of outer switching portion with connecting rod one end can be dismantled and be connected, the connecting rod other end with storage portion one end is connected, the storage portion other end is equipped with the discharge gate. The device can be placed into a single crystal furnace in the process of pulling single crystals, the supplementary dopant is placed in the material storage part, the doping range of the supplementary dopant in silicon melt can be expanded through the extension of the connecting rod, the speed and the uniformity of the dopant entering the silicon melt can be further improved through rotation, the uniformity of each part of the dopant of the pulled single crystal silicon rod is ensured, the resistivity uniformity of the prepared current single crystal silicon rod is improved, and the quality of the current single crystal silicon rod is further improved.
Description
Technical Field
The utility model relates to a monocrystalline silicon is given birth to and is produced technical field, especially relates to a supplementary doping device and vertical pulling single crystal growing furnace.
Background
In the production and crystal pulling process of monocrystalline silicon in the photovoltaic industry, doping agents with different types and quantities are generally required to meet the model and resistivity of the monocrystalline silicon. The existing common doping method of the dopant comprises a direct doping method, namely, a certain amount of the dopant and the primary polysilicon material are simultaneously put into a crucible to be melted according to the requirement of target resistivity, the dopant and the primary polysilicon material are simultaneously melted at high temperature and are uniformly distributed in a melt along with the flowing of a silicon melt, but the method is suitable for the dopant with higher melting point and evaporation temperature, such as boron, arsenic and other elements, when the melting point and the evaporation temperature of the dopant are lower, such as gallium, phosphorus and other elements, along with the processes of heating and pulling, the amount of the dopant in the silicon melt is far lower than the expected value, so if pulling is continued, the resistivity of the produced crystal bar deviates from the target value, which causes the unstable quality of the crystal bar and reduces the yield of the crystal bar. In order to solve the problem, the dopant needs to be supplemented in the crystal pulling process, but the conventional supplementary doping device generally directly introduces the supplementary dopant into the silicon melt and melts the supplementary dopant into the silicon melt through thermal power, so that the doping range of the dopant is limited by the adding mode, the dopant cannot be rapidly and uniformly dissolved into the silicon melt, the uniformity of supplementary doping is influenced, and the uniformity of resistivity of the pulled monocrystalline silicon rod is further influenced.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned defects or shortcomings in the prior art, it is desirable to provide a supplemental doping apparatus and a czochralski crystal growing furnace, which solve or partially solve the problem that the uniformity of resistivity of the prepared single crystal silicon rod is difficult to meet the standard.
In a first aspect, the utility model provides a supplementary doping device, which is used in a czochralski crystal growing furnace and comprises a material storage part, a connecting rod and an outer adapting part, wherein one end of the outer adapting part is used for being connected with the czochralski crystal growing furnace, the other end of the outer adapting part is detachably connected with one end of the connecting rod, the other end of the connecting rod is connected with one end of the material storage part, and the other end of the material storage part is provided with a discharge hole; the material storage part comprises a material storage cavity, and the material outlet is smaller than the vertical distance of the axis of the material storage cavity, namely the inner wall of the material storage cavity is smaller than the minimum vertical distance of the axis of the material storage cavity.
In one embodiment, the connecting rod comprises a connecting section and a doping section, one end of the connecting section is detachably connected with the outer junction part, the other end of the connecting section is connected with one end of the doping section, one end of the storage part is connected with the other end of the doping section, the connecting section extends along the pulling direction of the single crystal, and an included angle between the doping section and the connecting section is larger than 0 degree and smaller than 180 degrees.
In one embodiment, the included angle between the doped segment and the connecting segment is 90 degrees.
In one embodiment, the storage cavity extends from the connection position of the storage part and the connecting rod to the discharge hole, and the storage part and the doping section are arranged in a direction having an included angle of minus 10 degrees to 10 degrees.
In one embodiment, the direction of arrangement of the stock portion is perpendicular to the pulling direction of the single crystal.
In one embodiment, the cross-sectional area of the material storage chamber in the direction perpendicular to the axial center increases and then decreases from the connection position of the material storage part and the connecting rod to the material outlet.
In one embodiment, the apparatus further includes a fastener, wherein one end of the outer swivel part has a first connecting structure, one end of the connecting rod has a second connecting structure, the first connecting structure and the second connecting structure are connected by the fastener, and the fastener is one of a bolt, a hoop, or a pin.
In one embodiment, the outer swivel is made of a carbon-carbon composite material, and the connecting rod and the storing portion are made of high-purity quartz.
In one embodiment, the supplementary dopant placed in the storage cavity is high-purity gallium.
In a second aspect, the present invention provides a czochralski crystal growing furnace, comprising an external driving part and the supplemental doping device described in the first aspect, wherein the external driving part is used for driving the supplemental doping device to rotate.
According to the technical scheme provided by the embodiment of the application, the scheme provides a supplementary doping device and a Czochralski crystal growing furnace, wherein the supplementary doping device is used for the Czochralski crystal growing furnace and comprises a material storage part, a connecting rod and an outer rotating part, one end of the outer rotating part is used for being connected with the Czochralski crystal growing furnace, the other end of the outer rotating part is detachably connected with one end of the connecting rod, the other end of the connecting rod is connected with one end of the material storage part, and the other end of the material storage part is provided with a material outlet; the material storage part comprises a material storage cavity, and the material outlet is smaller than the vertical distance of the axis of the material storage cavity, namely the inner wall of the material storage cavity is smaller than the minimum vertical distance of the axis of the material storage cavity. The device can be placed into a single crystal furnace in the process of pulling single crystals, so that the addition of the dopant and the pulling of the single crystal silicon rod are carried out synchronously, the supplementary dopant is placed in the storage part and can be supplemented into silicon melt, the doping range of the supplementary dopant in the silicon melt can be expanded through the extension of the connecting rod, and the speed and the uniformity of the dopant entering the silicon melt can be further improved through rotation, so that the uniformity of each part of the dopant of the pulled single crystal silicon rod is ensured, the resistivity uniformity of the prepared current single crystal silicon rod is improved, and the quality of the current single crystal silicon rod is further improved.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
fig. 1 is a perspective view of a complementary doping apparatus provided in an embodiment of the present application;
fig. 2 shows a cross-sectional view of a supplemental doping apparatus provided by an embodiment of the present application.
In the figure: 1-connecting rod, 11-connecting section, 12-doping section, 2-material storage part, 21-material storage cavity, 3-external rotating part and 4-fastening piece.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and are not limiting of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
As mentioned in the background art, in the current preparation process of the single crystal silicon rod, the concentration of the dopant in the silicon melt is greatly different in the pulling process of the single crystal silicon rod due to the segregation characteristics of the dopant and the volatilization loss in the process, so that the resistivity uniformity of the prepared single crystal silicon rod is difficult to meet the standard, and the quality of the single crystal silicon rod is affected. Therefore, how to solve the problem that the resistivity uniformity of the single crystal silicon rod is difficult to meet the set target value due to the concentration difference of the dopant is an improvement direction of the present application. In view of the above, the present disclosure provides a supplemental doping apparatus and a czochralski crystal growing furnace.
Referring to fig. 1 and 2, fig. 1 and 2 show a complementary doping apparatus provided in the present embodiment.
The device comprises a material storage part 2, a connecting rod 1 and an outer rotating part 3, wherein one end of the outer rotating part 3 is used for being connected with the czochralski crystal growing furnace, the other end of the outer rotating part 3 is detachably connected with one end of the connecting rod 1, the other end of the connecting rod 1 is connected with one end of the material storage part 2, and the other end of the material storage part 2 is provided with a discharge hole; the material storage part 2 comprises a material storage cavity, and the material outlet is smaller than the vertical distance of the axis of the material storage cavity, namely the inner wall of the material storage cavity is smaller than the minimum vertical distance of the axis of the material storage cavity.
The connecting rod 1 comprises a connecting section 11 and a doping section 12, one end of the connecting section 11 is detachably connected with the outer rotating portion 3, the other end of the connecting section 11 is connected with one end of the doping section 12, one end of the storage portion 2 is connected with the other end of the doping section 12, the connecting section 11 extends along the drawing direction, and an included angle which is larger than 0 degree and smaller than 180 degrees is formed between the doping section 12 and the connecting section 11. Preferably, the included angle between the doping section and the connecting section is 90 degrees.
When the resistivity of the silicon single crystal rod is detected to be high, the device is inserted into a single crystal furnace in the process of pulling the single crystal until the storage cavity 21 of the storage part 2 is immersed by the molten liquid, then the outer rotating part 3, the connecting rod 1 and the storage part 2 are driven to rotate by an external device, and the doping agent is uniformly supplemented into the silicon molten liquid through centrifugation. The supplement and addition of the dopant are synchronously carried out with the pulling of the single crystal silicon rod, so that the uniformity of the dopant of each part of the pulled single crystal silicon rod is ensured.
The single crystal furnace is provided with a rotary joint, the shape of the outer rotating part 3 is matched with the shape and size of the rotary joint, and the outer rotating part 3 can be directly connected to the rotary joint of the single crystal furnace.
The sectional area of the material storage cavity 21 in the direction perpendicular to the axis is from the connection part of the material storage part 2 and the connecting rod 1 to the material outlet, and the sectional area is increased and then reduced.
The inner diameter of the discharge hole is 15-20 mm.
High-purity gallium is placed in the material storage cavity 21, and the high-purity gallium can be high-purity gallium particles. The purity of the high-purity gallium particles is 99.99-99.9999%, and the high-purity gallium particles can be replaced by high-purity gallium particles or high-purity gallium blocks.
The outer rotating part 3 is made of a carbon-carbon composite material, and the connecting rod 1 and the material storage part 2 are made of high-purity quartz. Because the composition of the melt is silicon meltLiquid, therefore the connecting rod 1 adopts the composition of SiO2The high-purity quartz comprises the following components: SiO 22Not less than 99.9-99.99%, and is not easy to cause pollution to the silicon liquid. The outer junction is made of a carbon-carbon composite material which is high in strength, good in toughness and strong in high temperature resistance. It is emphasized that the connecting rod 1 adopts a solid structure, and the solid structure can improve the strength of the connecting rod and can keep the shape unchanged for a long time under a high-temperature environment.
Preferably, the connecting rod 1 is an L-shaped connecting rod. Wherein the sum of the lengths of the connecting section 11 and the outer swivel joint is 205-220mm, and the length of the doped section 12 is 75-100 mm.
In addition, the device also comprises a fastening piece 4, one end of the outer rotating part 3 is provided with a first connecting structure, one end of the connecting rod 1 is provided with a second connecting structure, and the first connecting structure and the second connecting structure are connected through the fastening piece 4.
The fasteners 4 may be bolts, pins or rivets. Taking the fastening piece 4 as an example, the first connecting structure is a connecting hole arranged on the outer turning part 3, the second connecting structure is another connecting hole arranged on the connecting rod 1, and the bolt passes through the two connecting holes and is fastened through a nut. Fix outer switching portion 3 and connecting rod 1 through bolt and nut to realize outer switching portion 3 with connecting rod 1 can dismantle and be connected.
For the understanding of the present application, the following will further describe the use of the complementary doping apparatus provided by the present invention in conjunction with the steps of complementary doping, taking the process of pulling single crystal silicon as an example.
The quantitative supplementary doping process for producing monocrystalline silicon by the Czochralski method specifically comprises the following steps:
1) connecting an outer rotating part 3 with an outer driving part, connecting a connecting rod 1 with a material storage part 2 with the outer rotating part 3 through a fastener 4, and assembling a supplementary doping device;
2) when the resistivity is detected to be abnormal, a certain amount of high-purity gallium particles are filled in the material storage part 2, and the supplementary doping device is placed in the auxiliary chamber of the single crystal furnace for purging and purification;
3) lowering the material storage part 2 to the middle part of the heat shield for preheating for 10 min;
4) cooling to the lower edge of the heat shield and preheating for 10 min;
5) after preheating is finished, slowly descending until the material storage part 2 is completely immersed by molten liquid, driving the supplementary doping device to rotate for 20min through an external driving part, and then lifting out the whole device to finish doping agent addition;
6) and lifting the material storage part 2 of the supplementary doping device to the lower edge of the heat shield for cooling for 10min, lifting the material storage part to the middle of the heat shield for cooling for 10min, lifting the material storage part to a secondary chamber of the single crystal furnace for isolated cooling for 10min, and taking out the material storage part.
When the material storage part 2 is immersed by the molten liquid, high-purity gallium particles are fused with the molten liquid, and the doping range is adjusted by adjusting the depth of the material storage part immersed in the silicon solution. Further, the supplementing and doping device is driven to rotate by the external driving part, high-purity gallium in the storage part 2 is supplemented into the silicon solution through centrifugal action, and the speed and uniformity of the dopant entering the silicon solution can be further improved.
In addition, the embodiment also provides a czochralski crystal growing furnace, which comprises an external driving part and the supplementary doping device described above, wherein the external driving part is used for driving the supplementary doping device to rotate.
The above description is only a preferred embodiment of the application and is illustrative of the principles of the technology employed. It will be understood by those skilled in the art that the scope of the present invention is not limited to the specific combination of the above-mentioned features, but also covers other embodiments formed by any combination of the above-mentioned features or their equivalents without departing from the spirit of the present invention. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.
Claims (10)
1. A supplementary doping device is used in a Czochralski single crystal growing furnace and is characterized by comprising a material storage part, a connecting rod and an outer rotating part, wherein one end of the outer rotating part is used for being connected with the Czochralski single crystal growing furnace, the other end of the outer rotating part is detachably connected with one end of the connecting rod, the other end of the connecting rod is connected with one end of the material storage part, and the other end of the material storage part is provided with a discharge hole; the material storage part comprises a material storage cavity, and the material outlet is smaller than the vertical distance of the axis of the material storage cavity, namely the inner wall of the material storage cavity is smaller than the minimum vertical distance of the axis of the material storage cavity.
2. The supplemental doping apparatus of claim 1, wherein the connecting rod comprises a connecting segment and a doping segment, one end of the connecting segment is detachably connected to the outer turning portion, the other end of the connecting segment is connected to one end of the doping segment, one end of the storing portion is connected to the other end of the doping segment, the connecting segment extends along a pulling direction of the single crystal, and an included angle between the doping segment and the connecting segment is greater than 0 degree and smaller than 180 degrees.
3. The supplemental doping apparatus of claim 2, wherein the included angle between the doping segment and the connecting segment is 90 degrees.
4. The supplementary doping device of claim 2 or 3, wherein the storage cavity extends from the connection position of the storage part and the connecting rod to the discharge hole, and the storage part and the doping section are arranged in a direction having an included angle of minus 10 degrees to 10 degrees.
5. The supplemental doping apparatus of claim 1, wherein the direction of placement of the stock portion is perpendicular to the direction of pulling of the single crystal.
6. The supplemental doping device of claim 1, wherein the cross-sectional area of the storage chamber in the direction perpendicular to the axis increases from the junction of the storage portion and the connecting rod to the discharge port and then decreases.
7. The supplemental doping apparatus of claim 1 further comprising a fastener, wherein the outer swivel has a first connecting structure at one end, wherein the connecting rod has a second connecting structure at one end, wherein the first connecting structure and the second connecting structure are connected by the fastener, and wherein the fastener is one of a bolt, a hoop, or a pin.
8. The supplemental doping apparatus of claim 1, wherein the outer transition portion is made of a carbon-carbon composite material, and the connecting rod and the stock portion are made of high-purity quartz.
9. The supplemental doping apparatus of claim 1, wherein the supplemental dopant placed in the storage chamber is high-purity gallium.
10. A czochralski crystal growing furnace comprising an external driving part and the supplemental doping apparatus as claimed in any one of claims 1 to 9, wherein the external driving part is used for driving the supplemental doping apparatus to rotate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022392105.XU CN214088736U (en) | 2020-10-23 | 2020-10-23 | Supplementary doping device and czochralski crystal growing furnace |
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| CN202022392105.XU CN214088736U (en) | 2020-10-23 | 2020-10-23 | Supplementary doping device and czochralski crystal growing furnace |
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