CN213988913U - Ultraviolet AlInGaN light-emitting diode with flip chip structure - Google Patents
Ultraviolet AlInGaN light-emitting diode with flip chip structure Download PDFInfo
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Abstract
The utility model discloses an ultraviolet AlInGaN emitting diode with flip chip structure. Along with the improvement of AlInGaN emitting diode Al component, the wavelength also can reduce gradually, and the light-emitting mode that TE mould light-emitting account for leading simultaneously is transformed into TM mould light-emitting account for leading, for the luminous efficiency who improves the TM mould, the utility model discloses at N type electrode region and edge electrode region, set up the passivation layer, form the reflection metal district of falling the trapezium structure in the passivation layer region, the region of falling the trapezium structure is provided with the metal that has strong reflection efficiency to the ultraviolet ray, and the TM light that produces in the quantum well can be through the reflection of strong reflection metal level come, has greatly promoted TM mould luminous efficiency to whole ultraviolet AlInGaN emitting diode's luminous intensity has been improved.
Description
Technical Field
The utility model relates to a light emitting diode, concretely relates to ultraviolet AlInGaN light emitting diode with flip chip structure.
Background
The ultraviolet light in the nature has strong use value, such as the ultraviolet curing function of UVA wave band, the ultraviolet medical function of UVB wave band and the ultraviolet sterilization function of UVC wave band. However, natural ultraviolet light is difficult to collect and utilize, and the UVC band on the earth hardly exists because of the absorption of the atmosphere. Therefore, in order to make better use of the value of ultraviolet light, the development and production of ultraviolet light emitting diodes has recently become popular in the semiconductor field.
The ultraviolet light-emitting diode is a light-emitting diode with the wavelength of 100nm to 365nm, and has great application value in the fields of solidification, sterilization and disinfection, medical treatment, biochemical detection, secret communication and the like. Compared with the ultraviolet light source of the mercury lamp, the deep ultraviolet light emitting diode based on the aluminum gallium nitride (AlInGaN) material has the advantages of firmness, energy conservation, long service life, no mercury, environmental protection and the like, and gradually permeates the traditional application field of the mercury lamp. Meanwhile, the unique advantages of the deep ultraviolet light emitting diode also stimulate many new consumer electronic product applications, such as disinfection modules of white appliances, portable water purification systems, mobile phone disinfectors and the like, thereby showing wide market prospects and becoming a global research hotspot.
Currently, the ultraviolet light emitting diode mainly adopts AlInGaN as a main growth material, and a CVD epitaxial growth method is utilized to grow a required light emitting structure. The most basic structure comprises an AlInGaN buffer layer, an AlInGaN undoped layer, an n-type AlInGaN layer, an AlInGaN quantum well layer, an AlInGaN electron blocking layer, and a P-type AlInGaN layer. The higher the Al composition of the AlInGaN quantum well layer as the wavelength becomes shorter. However, as the Al composition of the AlInGaN quantum well layer gradually becomes higher, the light extraction mode dominated by the TE mode becomes dominated by the TM mode. And TM mode ultraviolet light can form strong absorption in the material and is not extracted, so that the light extraction efficiency of the ultraviolet light is reduced sharply.
At present, the AlInGaN light-emitting diode has low luminous efficiency, the luminance of a 20-mil chip is about 10mW under 100mA driving current, the sterilization efficiency is low due to low luminous efficiency, and the use scene of ultraviolet light is greatly limited.
Based on above reason, the utility model provides an ultraviolet AlInGaN emitting diode with flip chip structure improves ultraviolet AlInGaN emitting diode TM mode light-emitting efficiency, and the purpose makes the light of TM direction can obtain abundant reflection to draw out well, promote AlInGaN emitting diode's performance.
SUMMERY OF THE UTILITY MODEL
The utility model discloses an overcome the poor problem of ultraviolet ray TM mould light-emitting efficiency who sends in traditional AlInGaN quantum well, adopt the ultraviolet ray that sends in the trapezoidal ultraviolet ray high reflectivity metal level to AlInGaN quantum well to reflect and draw, greatly improve TM mould light-emitting efficiency.
The utility model discloses a following mode realizes:
an ultraviolet AlInGaN light-emitting diode with a flip chip structure comprises the following structures:
a sapphire patterned substrate;
the sapphire patterned substrate is provided with an undoped AlInGaN layer;
the first N-type AlInGaN layer is arranged on the undoped AlInGaN layer: a second N-type AlInGaN layer is also arranged on the first N-type AlInGaN layer;
an AlInGaN multi-quantum well layer is arranged on the second N type AlInGaN layer;
an AlInGaN electronic barrier layer is arranged on the AlInGaN multi-quantum well layer;
a P-type AlInGaN contact layer is arranged on the electron blocking layer;
one side of the laminated structure formed by the second N-type AlInGaN layer-P-type AlInGaN contact layer is provided with a central N electrode area, and the other side of the laminated structure is provided with an edge N electrode area;
the central N electrode region is provided with a first SiO2A passivation layer, wherein the edge N electrode region is provided with a second SiO2A passivation layer;
the first SiO2Passivation layer and first SiO2The passivation layers are provided with inverted trapezoidal grooves;
a Ti/Au layer is arranged at the bottom of the inverted trapezoid of the central N electrode area and the bottom of the inverted trapezoid of the edge N electrode area, and the Ti/Au layer is an N electrode metal layer;
an Al metal is arranged on the N electrode metal layer and is used as an inverted trapezoidal ultraviolet reflection layer of a central N electrode area and an inverted trapezoidal ultraviolet reflection layer of an edge N electrode area, and the thicknesses of the layers are 300 nm;
a Ni/Au alloy is arranged on the P-type AlInGaN contact layer to serve as a P-type electrode layer, the thickness of the P-type AlInGaN contact layer is 1nm/10nm, and an Al metal reflecting layer is arranged on the P-type electrode layer;
the N electrode metal layer is connected with the alloy point through the inverted trapezoidal ultraviolet reflection layer in the central N electrode area and further connected with the base, and the P type electrode layer is electrically connected with the base through the alloy point to form a flip chip structure.
Preferably, the thickness of the undoped AlInGaN layer is 3 μm; the thickness of the first N-type AlInGaN layer is 2 μm.
Preferably, the AlInGaN multi-quantum well layer has a structure of Al0.25In0.01Ga0.74N/Al0.5In0.01Ga0.49N, wherein Al0.25In0.01Ga0.74N is a quantum well layer, the well width is 2nm, Al0.5In0.01Ga0.49N is a quantum barrier layer, the barrier width is 12nm, the period thickness is 14nm, and the period number is 6.
Preferably, the central N electrode region is 3 long strips, the width of each long strip is 50 μm, the length of each long strip is 300 μm, the height of each long strip is 500nm, and the width of each edge N electrode region is 20 μm, and the height of each edge N electrode region is 500 nm.
Preferably, the long side of the top of the inverted trapezoid of the central N electrode region is 46 μm, the width of the passivation layer of the sidewall region is 2 μm, the short side of the bottom is 40 μm, and the width of the passivation layer of the sidewall region is 5 μm; the long side of the top of the inverted trapezoid of the edge N electrode area is 16 micrometers, the width of the passivation layer of the side wall area is 2 micrometers, the short side of the bottom of the inverted trapezoid of the edge N electrode area is 10 micrometers, and the width of the passivation layer of the side wall area is 5 micrometers.
Preferably, the thickness of the AlInGaN electronic barrier layer is 40nm, the thickness of the P-type AlInGaN contact layer is 150nm, the thicknesses of the Ti/Au layers are 100nm/100nm respectively, and the thickness of the Al metal reflecting layer on the P-type electrode layer is 500 nm.
Preferably, the flip chip size is 500 μm by 500 μm.
The utility model has the following outstanding advantages:
(1) the traditional mode of simply improving the internal quantum efficiency is broken through to improve the ultraviolet light extraction efficiency, and the method is more effective and simpler;
(2) the inverted trapezoidal reflective metal layer is made of ultraviolet high-reflectivity metals such as Al, Pt, Mg, Rh and the like and compounds thereof, and the thickness of the reflective metal layer exceeds that of the AlInGaN quantum well layer region, so that all ultraviolet light generated in the AlInGaN quantum well layer can be reflected to the substrate surface through the inverted trapezoidal metal reflective layer to emit light; the inverted trapezoidal reflection structure can effectively improve the extraction efficiency of ultraviolet light, and the ultraviolet light cannot continuously propagate in the TM direction in the material body after being reflected out, so that the ultraviolet light cannot be absorbed by the material;
(3) simple conditions and easy industrial production.
Drawings
To further illustrate the present invention, the following detailed description of the present invention is made with reference to the drawings and examples, and the drawings are now briefly described.
FIG. 1 schematic plan view of center/edge N-electrode
FIG. 2 is a schematic view of a flip chip
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the following will explain in detail each embodiment of the present invention with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that in various embodiments of the invention, numerous technical details are set forth in order to provide a better understanding of the present application. However, the technical solution claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments. The following embodiments are divided for convenience of description, and should not constitute any limitation to the specific implementation manner of the present invention, and the embodiments may be mutually incorporated and referred to without contradiction.
The first embodiment is as follows:
an ultraviolet AlInGaN light emitting diode with a flip chip structure, referring to FIG. 2, comprises the following structure:
a sapphire patterned substrate 201;
an undoped AlInGaN layer 202 is arranged on the sapphire pattern substrate 201, and the thickness of the undoped AlInGaN layer is controlled to be 3 micrometers;
an N-type Al0.6Ga0.4N layer 203 is arranged on the undoped AlInGaN layer 202: the thickness of the N-type Al0.6Ga0.4N layer 203 is 2 mu m; the function of the N-type AlGaN layer 203 is to form good N-type ohmic contact; an N-type AlInGaN layer 204 is further arranged on the N-type Al0.6Ga0.4N layer 203;
an AlInGaN multi-quantum well layer 205 is arranged on the N-type AlInGaN layer 204, the structure of the multi-quantum well layer 205 is Al0.25In0.01Ga0.74N/Al0.5In0.01Ga0.49N, the period thickness is 14nm (wherein Al0.25In0.01Ga0.74N is a quantum well layer, the well width is 2nm, Al0.5In0.01Ga0.49N is a quantum barrier layer, the barrier width is 12nm), the period number is 6, the more the period number is, the more the light-emitting layer is, the higher the brightness is, the more the period number is, the injection sum of holes is limited, the resistivity of the whole structure is improved, and the quality of materials is reduced;
the AlInGaN multi-quantum well layer 205 is provided with an Al0.60In0.01Ga0.39N electronic barrier layer 206 with the thickness of 40 nm;
the electron blocking layer 206 is provided with a P-type Al0.40In0.01Ga0.59N contact layer 207 with the thickness of 150 nm;
referring to fig. 1 and 2, one side of the stacked structure formed by the N-type AlInGaN layer 204 to the P-type contact layer 207 has a central N electrode region 102, the central N electrode region 102 is 3 strips, the width of each strip is 50 μm, the length of each strip is 300 μm, the height of each strip is 500nm, the other side of each strip is an edge N electrode region 101, and the width of each edge N electrode region 101 is 20 μm, and the height of each edge N electrode region is 500 nm;
the central N electrode region is provided with SiO2A passivation layer 208, the edge N electrode region being provided with SiO2A passivation layer 209;
the SiO2The passivation layers 208 and 209 are provided with inverted trapezoid grooves, the long side of the top of the inverted trapezoid of the central N electrode area is 46 μm, the width of the passivation layer of the side wall area is 2 μm, the short side of the bottom is 40 μm, and the width of the passivation layer of the side wall area is 5 μm; the long side of the top of the inverted trapezoid of the edge N electrode area is 16 micrometers, the width of the passivation layer of the side wall area is 2 micrometers, the short side of the bottom of the inverted trapezoid of the edge N electrode area is 10 micrometers, and the width of the passivation layer of the side wall area is 5 micrometers; the passivation layer with a certain width is arranged to prevent the electrode and the reflectionLayer metal conduction, resulting in leakage;
a Ti/Au layer 212 is arranged at the bottom of the inverted trapezoid of the central N electrode area and the bottom of the inverted trapezoid of the edge N electrode area, the Ti/Au layer 212 is an N electrode metal layer, and the thicknesses of the Ti/Au layer and the N electrode metal layer are respectively 100nm/100 nm;
an Al metal is arranged on the Ti/Au layer 212 to serve as an inverted trapezoidal ultraviolet reflecting layer 210 in a central N electrode area and an inverted trapezoidal ultraviolet reflecting layer 211 in an edge N electrode area, the thickness of the inverted trapezoidal ultraviolet reflecting layer is 300nm, and ultraviolet light emitted by a quantum well can be completely reflected; the thickness of the reflecting layer exceeds that of the AlInGaN quantum well layer region, so that all ultraviolet light generated by the AlInGaN quantum well layer can be reflected to the substrate surface through the inverted trapezoidal metal reflecting layer to emit light; the inverted trapezoidal reflection structure can effectively improve the extraction efficiency of ultraviolet light, and the ultraviolet light cannot continuously propagate in the TM direction in the material body after being reflected out, so that the ultraviolet light cannot be absorbed by the material;
a Ni/Au alloy is arranged on the P-type contact layer 207 and used as a P-type electrode layer 213, the thickness of the Ni/Au alloy is 1nm/10nm respectively, good P-type ohmic contact is formed, an Al metal reflecting layer (not shown in the figure) is arranged on the P-type electrode layer 213, the thickness of the Al metal reflecting layer on the P-type electrode layer 213 is 500nm, and good P-type area ultraviolet light reflection is formed;
the N electrode Ti/Au layer 212 is connected with the alloy point 214 through the inverted trapezoidal ultraviolet reflecting layer 210 in the central N electrode area and further connected with the base 215, the P type electrode layer 213 is electrically connected with the base 215 through the alloy point 214 to form a flip chip structure, and good light emission is formed by TM mode ultraviolet light through the surface of the substrate;
the size of the flip chip is 500 micrometers multiplied by 500 micrometers, and after 100mA current is introduced, ultraviolet light with the wavelength of 275nm is emitted, and the brightness is 30 mW.
It will be understood by those skilled in the art that the foregoing embodiments are specific examples of the invention, and that various changes in form and details may be made therein without departing from the spirit and scope of the invention in its practical application.
Claims (7)
1. An ultraviolet AlInGaN light-emitting diode with a flip chip structure is characterized by comprising the following structures:
a sapphire patterned substrate;
the sapphire patterned substrate is provided with an undoped AlInGaN layer;
the first N-type AlInGaN layer is arranged on the undoped AlInGaN layer: a second N-type AlInGaN layer is also arranged on the first N-type AlInGaN layer;
an AlInGaN multi-quantum well layer is arranged on the second N type AlInGaN layer;
an AlInGaN electronic barrier layer is arranged on the AlInGaN multi-quantum well layer;
a P-type AlInGaN contact layer is arranged on the electron blocking layer;
one side of the laminated structure formed by the second N-type AlInGaN layer-P-type AlInGaN contact layer is provided with a central N electrode area, and the other side of the laminated structure is provided with an edge N electrode area;
the central N electrode region is provided with a first SiO2A passivation layer, wherein the edge N electrode region is provided with a second SiO2A passivation layer;
the first SiO2Passivation layer and first SiO2The passivation layers are provided with inverted trapezoidal grooves;
a Ti/Au layer is arranged at the bottom of the inverted trapezoid of the central N electrode area and the bottom of the inverted trapezoid of the edge N electrode area, and the Ti/Au layer is an N electrode metal layer;
an Al metal is arranged on the N electrode metal layer and is used as an inverted trapezoidal ultraviolet reflection layer of a central N electrode area and an inverted trapezoidal ultraviolet reflection layer of an edge N electrode area, and the thicknesses of the layers are 300 nm;
a Ni/Au alloy is arranged on the P-type AlInGaN contact layer to serve as a P-type electrode layer, the thickness of the P-type AlInGaN contact layer is 1nm/10nm, and an Al metal reflecting layer is arranged on the P-type electrode layer;
the N electrode metal layer is connected with the alloy point through the inverted trapezoidal ultraviolet reflection layer in the central N electrode area and further connected with the base, and the P type electrode layer is electrically connected with the base through the alloy point to form a flip chip structure.
2. The ultraviolet AlInGaN light-emitting diode with the flip chip structure as claimed in claim 1, wherein: the thickness of the undoped AlInGaN layer is 3 mu m; the thickness of the first N-type AlInGaN layer is 2 μm.
3. The ultraviolet AlInGaN light-emitting diode with the flip chip structure as claimed in claim 1, wherein: the AlInGaN multi-quantum well layer has the structure of Al0.25In0.01Ga0.74N/Al0.5In0.01Ga0.49N, wherein Al0.25In0.01Ga0.74N is a quantum well layer, the well width is 2nm, Al0.5In0.01Ga0.49N is a quantum barrier layer, the barrier width is 12nm, the period thickness is 14nm, and the period number is 6.
4. The ultraviolet AlInGaN light-emitting diode with the flip chip structure as claimed in claim 1, wherein: the central N electrode area is 3 long strips, the width of each long strip is 50 micrometers, the length of each long strip is 300 micrometers, the height of each long strip is 500nm, and the width of each edge N electrode area is 20 micrometers and the height of each edge N electrode area is 500 nm.
5. The ultraviolet AlInGaN light-emitting diode with the flip chip structure as claimed in claim 1, wherein: the long side of the top of the inverted trapezoid of the central N electrode area is 46 micrometers, the width of a passivation layer of the side wall area is 2 micrometers, the short side of the bottom of the inverted trapezoid of the central N electrode area is 40 micrometers, and the width of the passivation layer of the side wall area is 5 micrometers; the long side of the top of the inverted trapezoid of the edge N electrode area is 16 micrometers, the width of the passivation layer of the side wall area is 2 micrometers, the short side of the bottom of the inverted trapezoid of the edge N electrode area is 10 micrometers, and the width of the passivation layer of the side wall area is 5 micrometers.
6. The ultraviolet AlInGaN light-emitting diode with the flip chip structure as claimed in claim 1, wherein: the thickness of the AlInGaN electronic barrier layer is 40nm, the thickness of the P-type AlInGaN contact layer is 150nm, the thicknesses of the Ti/Au layers are 100nm/100nm respectively, and the thickness of the Al metal reflecting layer on the P-type electrode layer is 500 nm.
7. The ultraviolet AlInGaN light-emitting diode with the flip chip structure as claimed in claim 1, wherein: the size of the flip chip is 500 μm × 500 μm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022135344A1 (en) * | 2020-12-25 | 2022-06-30 | 至芯半导体(杭州)有限公司 | Method for improving tm mode light extraction efficiency of ultraviolet alingan light emitting diode |
| CN115579442A (en) * | 2022-12-12 | 2023-01-06 | 至芯半导体(杭州)有限公司 | Preparation method of deep ultraviolet LED chip structure |
-
2020
- 2020-12-25 CN CN202023173727.XU patent/CN213988913U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022135344A1 (en) * | 2020-12-25 | 2022-06-30 | 至芯半导体(杭州)有限公司 | Method for improving tm mode light extraction efficiency of ultraviolet alingan light emitting diode |
| CN115579442A (en) * | 2022-12-12 | 2023-01-06 | 至芯半导体(杭州)有限公司 | Preparation method of deep ultraviolet LED chip structure |
| CN115579442B (en) * | 2022-12-12 | 2024-01-26 | 至芯半导体(杭州)有限公司 | Preparation method of deep ultraviolet LED chip structure |
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