CN213986713U - Simulation test device for high-temperature aging failure of crimping type semiconductor - Google Patents
Simulation test device for high-temperature aging failure of crimping type semiconductor Download PDFInfo
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- CN213986713U CN213986713U CN202022525289.2U CN202022525289U CN213986713U CN 213986713 U CN213986713 U CN 213986713U CN 202022525289 U CN202022525289 U CN 202022525289U CN 213986713 U CN213986713 U CN 213986713U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 238000012360 testing method Methods 0.000 title claims abstract description 87
- 238000002788 crimping Methods 0.000 title claims abstract description 48
- 238000004088 simulation Methods 0.000 title claims abstract description 23
- 230000032683 aging Effects 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 22
- 239000010949 copper Substances 0.000 claims description 22
- 238000003825 pressing Methods 0.000 claims description 7
- 230000006835 compression Effects 0.000 claims description 4
- 238000007906 compression Methods 0.000 claims description 4
- 230000007774 longterm Effects 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229920000742 Cotton Polymers 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 239000000779 smoke Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The utility model provides a simulation test device for high-temperature aging failure of a crimping type semiconductor, which comprises a heater, a crimping component and a tested semiconductor chip; the semiconductor chip to be tested is arranged in the crimping component, the crimping component is placed in the heater, the heater is provided with a test leading-out hole, and the semiconductor chip to be tested is used for being connected with external test equipment through the test leading-out hole. The utility model discloses a simulation test device that is used for crimping formula semiconductor's high temperature ageing inefficacy solves current crimping formula semiconductor device and is airtight tube shell structure, if becomes inefficacy device, then is difficult to survey and the problem of analysis at long-term through-flow in-process inside each item physical parameter.
Description
Technical Field
The utility model relates to a power semiconductor device tests the field, concretely relates to a testing arrangement that is used for crimping formula semiconductor high temperature ageing inefficacy.
Background
With the rapid development of renewable energy sources and direct-current power grids, a power conversion technology and a current breaking technology based on a high-power crimping type semiconductor are deeply researched and applied, a plurality of modules are cascaded in a modular multilevel power conversion technology in the existing flexible direct-current power transmission system, once a certain module fails, in order to maintain the continuous and stable operation of the power grid, a reliable bypass of the failed module needs to be ensured, the long-term short-circuit characteristic of a failed device needs to be ensured, in addition, in the application of a cascading type solid-state circuit breaker, once the certain module fails, certain requirements are also made on the long-term short-circuit characteristic of the device, but the short-circuit development characteristic of the existing failed device is not effectively researched and analyzed.
Different from the operation condition of a good device under a normal condition, the failed device may generate current concentration under long-term current flowing, so that the temperature rise is very high, and metal and organic matters in the whole failed device may generate relatively violent high-temperature physical and chemical reactions, so that the packaging state and the short-circuit characteristic of the failed device are unstable.
However, the conventional crimping type semiconductor device has a sealed shell structure, and if the conventional crimping type semiconductor device becomes a failure device, various internal physical parameters are difficult to detect and analyze in a long-term through-current process.
SUMMERY OF THE UTILITY MODEL
In order to overcome prior art's defect, the utility model provides a simulation test device that is used for crimping formula semiconductor's high temperature ageing inefficacy solves current crimping formula semiconductor device and is airtight tube shell structure, if become inefficacy device, then is difficult to survey and the problem of analysis at long-term through-flow in-process inside each item physical parameter.
The utility model discloses a following technical scheme realizes:
the utility model discloses a simulation test device for high-temperature aging failure of a crimping type semiconductor, which comprises a heater, a crimping component and a tested semiconductor chip;
the semiconductor chip to be tested is arranged in the crimping component, the crimping component is placed in the heater, the heater is provided with a test leading-out hole, and the semiconductor chip to be tested is used for being connected with external test equipment through the test leading-out hole.
Further, the crimping assembly comprises a support assembly, a pressure applying assembly, a top electrode, a bottom electrode and a lead-out piece;
the tested semiconductor chip is arranged in the supporting component;
the top electrode is arranged in the supporting component, arranged on the upper end face of the tested semiconductor chip and contacted with the upper end face of the tested semiconductor chip;
the bottom electrode is arranged in the supporting component, arranged on the lower end face of the semiconductor chip to be tested and contacted with the lower end face of the semiconductor chip to be tested;
the top of the supporting component is provided with a through hole, and the pressure applying component passes through the through hole and is arranged in the upper area inside the supporting component and used for applying pressure to the semiconductor chip to be tested;
one end of the leading-out piece is connected with the top electrode and the bottom electrode, and the other end of the leading-out piece is connected with external test equipment through the test leading-out hole.
Further, the crimping assembly further comprises a contact electrode;
the contact electrodes include a first contact electrode and a second contact electrode;
one end of the first contact electrode is connected with the top electrode, and the other end of the first contact electrode is connected with the leading-out piece;
one end of the second contact electrode is connected with the bottom electrode, and the other end of the second contact electrode is connected with the leading-out piece.
Further, the leading-out piece comprises a first leading-out copper bar and a second leading-out copper bar;
one end of the first lead-out copper bar is connected with the first contact electrode, and the other end of the first lead-out copper bar is connected with external test equipment through the test lead-out hole;
the second leading-out copper bar is connected with the second contact electrode, and the other end of the second leading-out copper bar is used for being connected with external test equipment through the test leading-out hole.
Further, the support assembly comprises a top plate, a bottom plate and side plates;
the top plate is provided with the through hole;
the upper end of the side plate is fixedly connected with the top plate;
the lower end of the side plate is fixedly connected with the bottom plate.
Further, the pressing assembly comprises a connecting sleeve and an adjusting bolt;
the connecting sleeve is arranged at the position of the through hole, and the outer wall of the connecting sleeve is inserted into the through hole;
an internal thread is formed inside the connecting sleeve;
the external thread of the adjusting bolt can be in threaded matching connection with the internal thread;
the adjusting bolt can be screwed in the connecting sleeve downwards through threads under external force, and the bottom of the adjusting bolt can apply pressure to the semiconductor chip to be tested in the downward moving process.
Furthermore, the outer wall of the bottom end of the connecting sleeve is provided with an annular bulge;
a disc spring is sleeved on the outer wall of the connecting sleeve between the lower end face of the top plate and the upper end face of the annular bulge;
one end of the disc spring is connected with the lower end face of the top plate, and the other end of the disc spring is connected with the upper end face of the annular bulge.
Further, the crimping assembly further comprises an insulating sheet, wherein the insulating sheet comprises a first insulating sheet and a second insulating sheet;
the first insulating sheet is arranged at the top end of the first contact electrode;
the second insulating sheet is arranged at the bottom end of the second contact electrode.
Further, the device also comprises a pressure equalizer and a pressure welding plate;
the voltage equalizer is arranged at the bottom end of the second contact electrode;
the crimping plate is disposed at an upper end of the first insulating sheet.
Furthermore, the simulation test device also comprises a connecting conduit, one end of the connecting conduit extends into the heater, and the other end of the connecting conduit extends out of the test leading-out hole to be connected with an external collector.
Compared with the closest prior art, the technical scheme of the utility model possess following beneficial effect:
the utility model provides a simulation test device that is used for crimping formula semiconductor's high temperature aging to become invalid, set up the crimping subassembly in the heater, set up in the crimping subassembly and be surveyed semiconductor chip, set up the test on the heater and draw forth the hole, it is used for and external test equipment is connected to draw forth the hole through the test by being surveyed semiconductor chip, whole simulation test device can simulate the high temperature environment that ordinary outside electric heater is difficult to reach, testing arrangement installs conveniently, easily adjust and even to being surveyed semiconductor chip's the applied pressure, be applicable to simulation crimping formula's IGBT semiconductor chip or IGCT semiconductor chip at 300 ℃ to 1000 ℃ high temperature aging to follow-up resistance and the temperature monitoring of inefficacy through-flow in-process.
The utility model provides a simulation test device that is used for crimping formula semiconductor's high temperature ageing inefficacy is connected with gas, smoke and dust collector through leading out connecting tube in following the heater, is convenient for survey the analysis to the physical and chemical reaction's of being surveyed semiconductor chip reaction product.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
FIG. 1 is a sectional view of a simulation test apparatus for high temperature aging failure of a compression-bonded semiconductor according to the present embodiment;
FIG. 2 is a front view of the compression assembly of FIG. 1 with a semiconductor chip under test placed thereon;
FIG. 3 is a side view of the crimp assembly of FIG. 1 with a semiconductor chip under test placed thereon;
FIG. 4 is a top view of the compression assembly of FIG. 1 with a semiconductor die placed thereon;
fig. 5 is a schematic diagram illustrating connection between the simulation test apparatus for high-temperature aging failure of the pressure-bonded semiconductor and an external test device according to the present embodiment.
Wherein, 1-semiconductor chip to be tested, 2-1-furnace wall, 2-2-furnace door, 2-3-furnace chamber, 3-1-first test lead-out hole, 3-2-second test lead-out hole, 4-1-top plate, 4-2-bottom plate, 4-3-side plate, 5-through hole, 6-fastening bolt, 7-1-top electrode, 7-2-bottom electrode, 8-connecting sleeve, 9-adjusting bolt, 10-annular bulge, 11-disc spring, 12-1-first contact electrode, 12-2-second contact electrode, 13-1-first lead-out copper bar, 13-2 second lead-out copper bar, 14-1-first insulating sheet, 14-2-a second insulating sheet, 15-a crimping plate, 16-a pressure equalizer and 17-a connecting conduit.
Detailed Description
The technical solution of the present invention will be described clearly and completely below with reference to the embodiments of the present invention, and it should be understood that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
Fig. 1 is a sectional view of a simulation test apparatus for high-temperature burn-in failure of a pressure bonded semiconductor according to the present embodiment, the simulation test apparatus including a heater, a pressure bonding module, and a semiconductor chip 1 to be tested.
The heater adopts a high-temperature muffle furnace, the high-temperature muffle furnace comprises a furnace wall 2-1, a furnace door 2-2 and a furnace chamber 2-3, a test leading-out hole is formed in the furnace wall 2-1, the tested semiconductor chip 1 is used for being connected with external test equipment through the test leading-out hole, the test leading-out hole comprises a first test leading-out hole 3-1 and a second test leading-out hole 3-2 as can be seen from figure 1, a crimping component is placed in the furnace chamber 2-3, the tested semiconductor chip 1 is placed in the crimping component, and the tested semiconductor chip 1 comprises but is not limited to an IGBT semiconductor chip or an IGCT semiconductor chip.
Because the inside of the simulation test device is in a high-temperature environment, the crimping component is made of a high-temperature-resistant metal structure or an insulating structure, and as shown in fig. 2, the crimping component comprises a supporting component, a pressing component, a contact electrode and a leading-out piece;
the semiconductor chip 1 to be tested is placed in the supporting component, the supporting component comprises a top plate 4-1, a bottom plate 4-2 and side plates 4-3, a through hole 5 is formed in the top plate 4-1, the side plates 4-3 comprise a first side plate, a second side plate, a third side plate and a fourth side plate, the first side plate, the second side plate, the third side plate and the fourth side plate are sequentially connected into side walls of the supporting component, the top end of the side wall of the supporting component is connected with the top plate 4-1, the bottom end of the side wall of the supporting component is connected with the bottom plate 4-2, specifically, the upper end of the first side plate is fixedly connected with the side wall of the top plate 4-1 through a fastening bolt 6, the lower end of the first side plate is fixedly connected with the side wall of the bottom plate 4-1 through a fastening bolt 6 (as shown in figure 3 or 4), the upper end of the third side plate is fixedly connected with the side wall of the top plate 4-1 through a fastening bolt 6, the lower end of the third side plate is fixedly connected with the side wall of the bottom plate 4-2 through a fastening bolt 6.
The contact electrodes include a top electrode 7-1 and a bottom electrode 7-2;
the top electrode 7-1 is arranged in the supporting component, and the top electrode 7-1 is arranged on the upper end face of the tested semiconductor chip 1 and is in contact with the upper end face of the tested semiconductor chip 1;
the bottom electrode 7-2 is disposed in the support member, and the bottom electrode 7-2 is disposed on the lower end surface of the semiconductor chip 1 under test and is in contact with the lower end surface of the semiconductor chip 1 under test.
The pressure applying assembly comprises a connecting sleeve 8 and an adjusting bolt 9, the connecting sleeve 8 is arranged at the position of a through hole 5 of the top plate 4-1, particularly, the connecting sleeve 8 is arranged in the through hole 5, the outer wall of the connecting sleeve 8 is inserted into the through hole 5, an internal thread is arranged in the connecting sleeve 8, an external thread of the adjusting bolt 9 can be in threaded matching connection with the internal thread of the connecting sleeve 8, in the process that the bottom of the adjusting bolt 9 is connected with the internal thread of the connecting sleeve 8 through the through hole 5 of the top plate 4-1, the bottom of the adjusting bolt 9 passes through the through hole 5 of the top plate 4-1 and moves to the upper area in the supporting assembly until the top electrode 7-1 is pressed, so that pressure is indirectly applied to the semiconductor chip 1 to be tested, the bottom shape of the adjusting bolt 9 is not specially designed, preferably, the bottom shape of the adjusting bolt 9 is arc, sphere or cone, and a hexagonal bolt hole can be formed in the top of the adjusting bolt 9, so that the adjusting bolt 9 can be conveniently rotated, and further, the pressure is indirectly applied to the tested semiconductor chip 1.
The outer wall of the bottom end of the connecting sleeve 8 is provided with an annular protrusion 10, the outer wall of the connecting sleeve 8 is sleeved with a disc spring 11 between the lower end face of the top plate 4-1 and the upper end face of the annular protrusion 10, one end of the disc spring 11 is connected with the lower end face of the top plate 4-1, the other end of the disc spring 11 is connected with the upper end face of the annular protrusion 10, the connection relation between the annular protrusion 10 and the outer wall of the bottom end of the connecting sleeve 8, the connection relation between the disc spring 11 and the top plate 4-1 and the connection relation between the disc spring 11 and the annular protrusion 10 are not particularly limited, and the technical personnel in the field can set and preferably select, the annular protrusion 10 can be integrally formed with the outer wall of the bottom end of the connecting sleeve 8 or welded with the outer wall of the bottom end of the connecting sleeve 8, the disc spring 11 is welded with the top plate 4-1, and the disc spring 11 is welded with the annular protrusion 10;
the disc spring 11 is sleeved on the outer wall of the connecting sleeve 8 between the lower end face of the top plate 4-1 and the upper end face of the annular protrusion 10, the elastic deformation of the disc spring can enable the pressure to be adjustable, the indirect pressure applied to the tested semiconductor chip 1 by the adjusting bolt 9 can be enabled to be balanced with the deformation force generated by the deformation of the disc spring 11, and therefore the stable crimping of the adjusting bolt 9 on the tested semiconductor chip 1 is achieved.
The crimping assembly further comprises a contact electrode which is used as an electric contact part to connect the tested semiconductor chip 1 and the leading-out part, wherein the contact electrode comprises a first contact electrode 12-1 and a second contact electrode 12-2;
the first contact electrode 12-1 is arranged above the top electrode 7-1, and the lower end face of the first contact electrode 12-1 is in contact with the upper end face of the top electrode 7-1;
the second contact electrode 12-2 is disposed below the bottom electrode 7-2, and the upper end face of the second contact electrode 12-2 is in contact with the lower end face of the bottom electrode 7-2.
One end of the leading-out piece is connected with the top electrode 7-1 and the bottom electrode 7-2, and the other end of the leading-out piece is connected with external test equipment through a test leading-out hole, and the method is as follows:
the leading-out piece comprises a first leading-out copper bar 13-1 and a second leading-out copper bar 13-2;
one end of a first leading-out copper bar 13-1 is connected with a first contact electrode 12-1 so as to realize connection with a top electrode 7-1, and the other end of the first leading-out copper bar 13-1 is connected with external test equipment through a first test leading-out hole 3-1;
one end of a second lead-out copper bar 13-2 is connected with a second contact electrode 12-2 so as to realize connection with the bottom electrode 7-2, and the other end of the second lead-out copper bar 13-2 is connected with external test equipment through a second test lead-out hole 3-2;
fig. 5 is a schematic diagram illustrating a connection between the simulation test apparatus for high-temperature aging failure of the pressure-bonded semiconductor and an external test device according to the present embodiment, where the external test device is a semiconductor resistance test device, but it should be noted that the external test device includes, but is not limited to, the semiconductor resistance test device illustrated in the figure.
In order to perform an insulation process of the pressing assembly and the semiconductor chip under test as the main body of the electrical test, the above-mentioned crimping assembly further comprises insulation sheets including a first insulation sheet 14-1 and a second insulation sheet 14-2, the first insulation sheet 14-1 being disposed at the top end of the first contact electrode 12-1, the second insulation sheet 14-2 being disposed at the bottom end of the second contact electrode 12-2;
since the inside of the simulation test device is in a high-temperature environment, the material of the crimping assembly is a high-temperature resistant metal structure or an insulation structure, so that the insulation sheet cannot adopt a common insulation organic matter, the first insulation sheet 14-1 and the second insulation sheet 14-2 need to adopt a high-temperature insulation sheet, preferably, the first insulation sheet 14-1 and the second insulation sheet 14-2 adopt mica sheets, but the first insulation sheet 14-1 and the second insulation sheet 14-2 are not limited to adopt mica sheets.
In the case of providing an insulation sheet for the crimping assembly, since the upper end surface of the top electrode 7-1 contacts the first contact electrode 12-1, and the top end of the first contact electrode 12-1 is provided with the first insulation sheet 14-1, the adjusting bolt 9 will indirectly apply pressure to the tested semiconductor chip 1 through the first insulation sheet 14-1, in order to prevent the first insulation sheet 14-1 from being damaged during the process of indirectly applying pressure to the tested semiconductor chip 1 through the first insulation sheet 14-1 by the bottom of the adjusting bolt 9, the upper end of the first insulation sheet 14-1 is provided with the crimping plate 15, the crimping plate 15 can match the structural arrangement of the bottom of the adjusting bolt 9, the bottom of the adjusting bolt 9 applies pressure to the first insulation sheet 14-1 through the crimping plate 15, thereby realizing the process of indirectly applying pressure to the tested semiconductor chip 1 by the bottom of the adjusting bolt 9, no damage is caused to the first insulating sheet 14-1.
The crimping assembly further comprises a voltage equalizer 16, the voltage equalizer 16 is disposed at the bottom end of the second contact electrode 12-2, the pressure applied to the semiconductor chip 1 to be tested by the adjusting bolt 9 can be uniformly adjusted, the structure of the voltage equalizer 16 is not particularly limited, and those skilled in the art can use the existing voltage equalizer.
In order to facilitate the determination and analysis of the physical and chemical reactions of the semiconductor chip 1 to be tested in the supporting assembly under the high temperature environment, the simulation testing device further comprises a connecting conduit 17, one end of the connecting conduit 17 extends into the heater, and the other end of the connecting conduit 17 extends out of the test leading-out hole and is connected with an external collector, so that the reaction product of the physical and chemical reactions of the semiconductor chip 1 to be tested in the supporting assembly under the high temperature environment can be sent to the external collector through the connecting conduit 17, and then the external collector is sent to the determination equipment for determination and analysis, wherein fig. 5 shows that the external collector is a gas and smoke collector;
it should be noted that connecting conduit 17 may extend from first test lead-out aperture 3-1, and may also extend from second test lead-out aperture 3-2.
In the embodiment, the first test lead-out hole 3-1 and the second test lead-out hole 3-2 are filled with the high temperature resistant cotton in the remaining gap part extending out of the first lead-out copper bar 13-1, the second lead-out copper bar 13-2 and the connecting conduit 17, the high temperature resistant cotton is filled to increase the thermal resistance, improve the heating efficiency and the temperature stability of the heater, and avoid the loss of excessive heat from the gap.
The above embodiments are only used to illustrate the technical solution of the present invention and not to limit the same, although the present invention is described in detail with reference to the above embodiments, those skilled in the art can still modify or equally replace the specific embodiments of the present invention, and any modification or equivalent replacement that does not depart from the spirit and scope of the present invention is within the protection scope of the claims of the present invention.
Claims (10)
1. A simulation test device for high-temperature aging failure of a compression joint type semiconductor is characterized by comprising a heater, a compression joint component and a tested semiconductor chip;
the semiconductor chip to be tested is arranged in the crimping component, the crimping component is placed in the heater, the heater is provided with a test leading-out hole, and the semiconductor chip to be tested is used for being connected with external test equipment through the test leading-out hole.
2. The simulated testing device for high temperature aging failure of crimped semiconductors according to claim 1, wherein the crimping assembly comprises a support assembly, a pressure applying assembly, a top electrode, a bottom electrode, and a lead-out;
the tested semiconductor chip is arranged in the supporting component;
the top electrode is arranged in the supporting component, arranged on the upper end face of the tested semiconductor chip and contacted with the upper end face of the tested semiconductor chip;
the bottom electrode is arranged in the supporting component, arranged on the lower end face of the semiconductor chip to be tested and contacted with the lower end face of the semiconductor chip to be tested;
the top of the supporting component is provided with a through hole, and the pressure applying component passes through the through hole and is arranged in the upper area inside the supporting component and used for applying pressure to the semiconductor chip to be tested;
one end of the leading-out piece is connected with the top electrode and the bottom electrode, and the other end of the leading-out piece is connected with external test equipment through the test leading-out hole.
3. The simulation test device for high temperature aging failure of crimped semiconductor according to claim 2,
the crimping assembly further comprises a contact electrode;
the contact electrodes include a first contact electrode and a second contact electrode;
one end of the first contact electrode is connected with the top electrode, and the other end of the first contact electrode is connected with the leading-out piece;
one end of the second contact electrode is connected with the bottom electrode, and the other end of the second contact electrode is connected with the leading-out piece.
4. The device for simulation test of high temperature aging failure of crimped semiconductor according to claim 3,
the leading-out piece comprises a first leading-out copper bar and a second leading-out copper bar;
one end of the first lead-out copper bar is connected with the first contact electrode, and the other end of the first lead-out copper bar is connected with external test equipment through the test lead-out hole;
the second leading-out copper bar is connected with the second contact electrode, and the other end of the second leading-out copper bar is used for being connected with external test equipment through the test leading-out hole.
5. The simulated testing apparatus for high temperature aging failure of crimped semiconductors according to claim 2, wherein the support assembly comprises a top plate, a bottom plate, and side plates;
the top plate is provided with the through hole;
the upper end of the side plate is fixedly connected with the top plate;
the lower end of the side plate is fixedly connected with the bottom plate.
6. The simulated test device for high temperature aging failure of crimped semiconductors according to claim 5, wherein the pressure applying assembly comprises a connecting sleeve and an adjusting bolt;
the connecting sleeve is arranged at the position of the through hole, and the outer wall of the connecting sleeve is inserted into the through hole;
an internal thread is formed inside the connecting sleeve;
the external thread of the adjusting bolt can be in threaded matching connection with the internal thread;
the adjusting bolt can be screwed in the connecting sleeve downwards through threads under external force, and the bottom of the adjusting bolt can apply pressure to the semiconductor chip to be tested in the downward moving process.
7. The simulation test device for the high-temperature aging failure of the compression-type semiconductor as claimed in claim 6, wherein the outer wall of the bottom end of the connecting sleeve is provided with an annular bulge;
a disc spring is sleeved on the outer wall of the connecting sleeve between the lower end face of the top plate and the upper end face of the annular bulge;
one end of the disc spring is connected with the lower end face of the top plate, and the other end of the disc spring is connected with the upper end face of the annular bulge.
8. The simulated test apparatus for high temperature burn-in failure of crimped semiconductors according to claim 3, wherein the crimping assembly further comprises an insulating sheet comprising a first insulating sheet and a second insulating sheet;
the first insulating sheet is arranged at the top end of the first contact electrode;
the second insulating sheet is arranged at the bottom end of the second contact electrode.
9. The device for the simulated test of the high temperature aging failure of the crimped semiconductor according to claim 8, further comprising a voltage equalizer and a crimping plate;
the voltage equalizer is arranged at the bottom end of the second contact electrode;
the crimping plate is disposed at an upper end of the first insulating sheet.
10. The device for simulating high temperature aging failure of a compression-type semiconductor according to claim 1, further comprising a connecting conduit, wherein one end of the connecting conduit extends into the heater, and the other end of the connecting conduit extends out of the test lead-out hole to be connected with an external collector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022525289.2U CN213986713U (en) | 2020-11-05 | 2020-11-05 | Simulation test device for high-temperature aging failure of crimping type semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022525289.2U CN213986713U (en) | 2020-11-05 | 2020-11-05 | Simulation test device for high-temperature aging failure of crimping type semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213986713U true CN213986713U (en) | 2021-08-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022525289.2U Active CN213986713U (en) | 2020-11-05 | 2020-11-05 | Simulation test device for high-temperature aging failure of crimping type semiconductor |
Country Status (1)
| Country | Link |
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| CN (1) | CN213986713U (en) |
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