CN213905298U - 一种硅片氧化装置 - Google Patents
一种硅片氧化装置 Download PDFInfo
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- CN213905298U CN213905298U CN202022530834.7U CN202022530834U CN213905298U CN 213905298 U CN213905298 U CN 213905298U CN 202022530834 U CN202022530834 U CN 202022530834U CN 213905298 U CN213905298 U CN 213905298U
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- Prior art keywords
- silicon wafer
- unit
- silicon
- oxidation
- oxidizing
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 144
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 144
- 239000010703 silicon Substances 0.000 title claims abstract description 144
- 230000003647 oxidation Effects 0.000 title claims abstract description 51
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 51
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 238000001816 cooling Methods 0.000 claims abstract description 14
- 230000001590 oxidative effect Effects 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 33
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 9
- 238000012544 monitoring process Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 15
- 239000007789 gas Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 26
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 22
- 239000000377 silicon dioxide Substances 0.000 abstract description 11
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 10
- 238000013461 design Methods 0.000 abstract description 3
- 230000001066 destructive effect Effects 0.000 abstract description 3
- 238000003915 air pollution Methods 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 238000012360 testing method Methods 0.000 description 8
- 238000005265 energy consumption Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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CN202022530834.7U CN213905298U (zh) | 2020-11-05 | 2020-11-05 | 一种硅片氧化装置 |
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CN202022530834.7U CN213905298U (zh) | 2020-11-05 | 2020-11-05 | 一种硅片氧化装置 |
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CN213905298U true CN213905298U (zh) | 2021-08-06 |
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CN202022530834.7U Active CN213905298U (zh) | 2020-11-05 | 2020-11-05 | 一种硅片氧化装置 |
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CN (1) | CN213905298U (zh) |
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- 2020-11-05 CN CN202022530834.7U patent/CN213905298U/zh active Active
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GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 inside. Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: No.12 Haitai East Road, Huayuan Industrial Zone, Binhai New Area, Tianjin Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region before: China Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. |
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CP03 | Change of name, title or address |