CN213879790U - Oring-FET turn-off circuit and redundant parallel operation power supply system - Google Patents
Oring-FET turn-off circuit and redundant parallel operation power supply system Download PDFInfo
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- CN213879790U CN213879790U CN202022538978.7U CN202022538978U CN213879790U CN 213879790 U CN213879790 U CN 213879790U CN 202022538978 U CN202022538978 U CN 202022538978U CN 213879790 U CN213879790 U CN 213879790U
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Abstract
The utility model relates to an Oring-FET turns off circuit and redundant parallel operation electrical power generating system, this circuit connection is between single power module and output bus, and this circuit includes: the circuit comprises a field effect transistor, an auxiliary turn-off circuit and a driving circuit; the input end of the field effect transistor is connected with the output end of the power supply module, the output end of the field effect transistor is connected with the output bus, and the driving circuit is connected with the driving end of the field effect transistor through the auxiliary turn-off circuit; when the power supply module works normally, the driving circuit drives the field effect transistor to be conducted; when the power module is short-circuited and fails, the driving circuit promotes the driving capability through the auxiliary turn-off circuit and rapidly controls the turn-off of the field effect transistor. The utility model discloses can be in power module short circuit failure, the field effect transistor that the quick control corresponds is turn-offed, avoids influencing the normal output of other parallel operation power supplies, leads to system output bus voltage unusual, has improved the power supply reliability and the stability of system.
Description
Technical Field
The utility model relates to a redundant parallel operation power technology field especially relates to an Oring-FET turns off circuit and redundant parallel operation electrical power generating system.
Background
Switching power supplies have been widely used in systems of various industries as high-efficiency dc power supplies. The reliability of the switching power supply directly influences the reliability of the whole system, in order to continuously improve the reliability of the whole system, the scene of using a plurality of power supplies in parallel is widely adopted by the application end of the system, so that the risk brought to the system by the failure of a single power supply is reduced
Firstly, a plurality of power supplies are simply connected in parallel through diodes, the mode is simple to apply, when one power supply fails, the diodes are naturally isolated, the output of other power supplies is not influenced, and an additional control device is hardly needed. However, as the output power of the power supply is increased by the system, the problems of loss and heat generation of the forward voltage drop band of the diode are directly highlighted, and the efficiency and the power density of the whole power supply are directly influenced and limited.
Subsequently, MOSFET (Metal Oxide Semiconductor Field Effect-Metal Oxide Semiconductor Field Effect Transistor) is used to realize parallel operation isolation (referred to as "Oring-FET" in the industry), and the forward on-resistance RDSON of the MOSFET itself can be made very small, so that in the aspect of outputting large current and large power, the loss is significantly reduced compared with the scheme of an isolation diode. However, the parallel use of multiple oring-fets in a high-power high-current output power supply increases the input equivalent capacitance, which in turn causes the MOSFET turn-off speed to be slow. Therefore, when a power supply connected in parallel fails due to short circuit, the MOSFET cannot be turned off quickly in time, which affects the normal output of other parallel power supplies, resulting in abnormal system bus voltage.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model lies in that, to prior art's defect, provide an Oring-FET turn-off circuit and redundant parallel operation electrical power generating system.
The utility model provides a technical scheme that its technical problem adopted is: constructing an Oring-FET turn-off circuit, the circuit connected between a single power supply module and an output bus, the circuit comprising: the circuit comprises a field effect transistor, an auxiliary turn-off circuit and a driving circuit;
the input end of the field effect transistor is connected with the output end of the power supply module, the output end of the field effect transistor is connected with an output bus, and the driving circuit is connected with the driving end of the field effect transistor through the auxiliary turn-off circuit;
when the power supply module works normally, the driving circuit drives the field effect transistor to be conducted; when the power module is short-circuited and fails, the driving circuit promotes the driving capability through the auxiliary turn-off circuit, and the field effect transistor is rapidly controlled to be turned off.
Preferably, the field effect transistor is an NMOS field effect transistor, a source of the NMOS field effect transistor is connected to the output of the power module, a drain of the NMOS field effect transistor is connected to the output bus, and a gate of the NMOS field effect transistor is connected to the auxiliary turn-off circuit.
Preferably, the auxiliary turn-off circuit includes: a PNP triode Q208, a diode D214 and a resistor R247;
the first end of the resistor R247 is connected with the gate of the NMOS field effect transistor, the second end of the resistor R247 is connected with the cathode of the diode D214, the anode of the diode D214 is connected with the driving circuit, the collector of the PNP triode Q208 is connected with the source of the NMOS field effect transistor, and the emitter of the PNP triode Q208 is connected with the cathode connection point of the second end of the resistor R247 and the diode D214.
Preferably, the driving circuit includes: the resistor R206, the resistor R207, the diode D211 and the triode Q209; the triode Q209 comprises a first pin, a second pin, a third pin, a fourth pin, a fifth pin and a sixth pin;
a first pin of the triode Q209 is connected with the source of the NMOS field effect transistor, the second pin and the fifth pin of the triode Q209 are connected, the third pin of the triode Q209 is connected with the drain electrode of the NMOS field effect transistor, the fourth pin and the fifth pin of the triode Q209 are shorted, the fourth pin of the triode Q209 is connected with the second end of the resistor R206, a first end of the resistor R206 is connected with an auxiliary power supply for supplying power, a sixth pin of the triode Q209 is connected with an anode of the diode D214, the first end of the resistor R207 is connected with an auxiliary power supply for supplying power, the second end of the resistor R207 is connected with the base electrode of the PNP triode Q208 and then connected with the connection point of the sixth pin of the triode Q209 and the anode of the diode D214, the anode of the diode D211 is connected to the sixth pin of the transistor Q209, and the cathode of the diode D211 is connected to the first end of the resistor R207.
Preferably, the voltage stabilizing diode ZD201 is also included;
the anode of the zener diode ZD201 is connected to a connection point between the collector of the PNP triode Q208 and the source of the NMOS field effect transistor, and the cathode of the zener diode ZD201 is connected to a connection point between the first end of the resistor R247 and the gate of the NMOS field effect transistor.
Preferably, the NMOS field effect transistor is of the type SiRA20 DP.
Preferably, the model of the triode Q209 is PBSS416 DS.
The utility model also provides a redundant parallel operation electrical power generating system, redundant parallel operation electrical power generating system includes: a plurality of power supply modules, the output of each power supply module being connected to the output bus via an Oring-FET turn-off circuit as described in any of the above.
Preferably, the power supply module includes: the power supply comprises an AC-DC power supply module and a DC-DC power supply module.
Implement the technical scheme of the utility model, following beneficial effect has: the utility model discloses an auxiliary turn-off circuit promotes the driving force of drive circuit when power module short circuit became invalid to reach the purpose that field effect transistor that the quick control corresponds when certain power module short circuit became invalid turn-offs, avoid influencing the normal output of other parallel operation power, lead to system bus voltage unusual, improved the power supply reliability and the stability of system.
Drawings
The invention will be further explained with reference to the drawings and examples, wherein:
FIG. 1 is a schematic diagram of the structure of an Oring-FET turn-off circuit of the present invention;
FIG. 2 is a circuit schematic of the Oring-FET turn-off circuit of the present invention;
fig. 3 is a schematic structural diagram of the redundant parallel operation power supply system of the present invention.
Detailed Description
In order to clearly understand the technical features, objects, and effects of the present invention, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
As shown in fig. 1, it is a schematic structural diagram of the present invention's Oring-FET turn-off circuit.
Referring to fig. 1, the Oring-FET turn-off circuit is connected between a single power supply module and an output bus, the Oring-FET turn-off circuit including: a field effect transistor 10, an auxiliary turn-off circuit 20, a drive circuit 30;
the input end of the field effect transistor 10 is connected with the output end of the power supply module, the output end of the field effect transistor 10 is connected with the output bus, and the driving circuit 30 is connected with the driving end of the field effect transistor 10 through the auxiliary turn-off circuit 20;
when the power module works normally, the driving circuit 30 drives the field effect transistor 10 to be conducted; when the power module fails in a short circuit, the driving circuit 30 can improve the driving capability through the auxiliary turn-off circuit 20, and rapidly control the turn-off of the field effect transistor 10.
The embodiment of the utility model provides an in, when certain power module short circuit became invalid, through supplementary driving force that cuts off circuit promotion drive circuit to the field effect transistor that the quick control corresponds cuts off, avoids influencing the normal output of other parallel operation power, leads to system bus voltage unusual.
As shown in fig. 2, a schematic circuit diagram of the present invention's Oring-FET turn-off circuit is shown.
Referring to fig. 2, in particular, the field effect transistor 10 is an NMOS field effect transistor, a source of the NMOS field effect transistor is connected to an output (power supply output) of the power supply module, a drain of the NMOS field effect transistor is connected to an output bus (bus output voltage), and a gate of the NMOS field effect transistor is connected to the auxiliary turn-off circuit 20.
Alternatively, the NMOS field effect transistor model may be SiRA20DP, but is not limited to this model. The SiRA20DP field effect transistors have 8 pins, wherein pins 1-3 are used as a group of sources, pin 4 is used as a gate, and pins 5-8 are used as a group of drains. Thus, the heat productivity can be reduced, and the heat dissipation, the uniform flow and the stability are facilitated.
In some optional embodiments, the auxiliary turn-off circuit 20 includes: a PNP triode Q208, a diode D214 and a resistor R247;
the first end of the resistor R247 is connected with the gate of the NMOS field effect transistor, the second end of the resistor R247 is connected with the cathode of the diode D214, the anode of the diode D214 is connected with the driving circuit 30, the collector of the PNP triode Q208 is connected with the source of the NMOS field effect transistor, and the emitter of the PNP triode Q208 is connected with the connection point of the second end of the resistor R247 and the cathode of the diode D214.
In some alternative embodiments, the driving circuit 30 includes: the resistor R206, the resistor R207, the diode D211 and the triode Q209; the triode Q209 comprises a first pin, a second pin, a third pin, a fourth pin, a fifth pin and a sixth pin;
the first pin of the triode Q209 is connected with the source electrode of the NMOS field effect transistor, the second pin and the fifth pin of the triode Q209 are connected, the third pin of the triode Q209 is connected with the drain electrode of the NMOS field effect transistor, the fourth pin and the fifth pin of the triode Q209 are in short circuit, the fourth pin of the triode Q209 is connected with the second end of the resistor R206, the first end of the resistor R206 is connected with the auxiliary power supply for power supply, the sixth pin of the triode Q209 is connected with the anode of the diode D214, the first end of the resistor R207 is connected with the auxiliary power supply for power supply, the second end of the resistor R207 is connected with the base electrode of the PNP triode Q208 and then is connected with the connection point of the sixth pin of the triode Q209 and the anode of the diode D214, the anode of the diode D211 is connected with the sixth pin of the triode Q209, and the cathode of the diode D211 is connected with the first end of the resistor R207.
Alternatively, transistor Q209 may be, but is not limited to, model PBSS416 DS. The PBSS416DS transistor used in this embodiment is formed by integrating two transistors to form a transistor. Therefore, the transistor Q209 of the present embodiment can also be implemented by two independent transistors. For example: the device is realized by a first NPN triode and a second NPN triode. Specifically, an emitter of the first NPN transistor serves as a first pin of the transistor Q209, a collector of the first NPN transistor serves as a sixth pin of the transistor Q209, a base of the first NPN transistor serves as a second pin of the transistor Q209, an emitter of the second NPN transistor serves as a fourth pin of the transistor Q209, a collector of the second NPN transistor serves as a third pin of the transistor Q209, and a base of the second NPN transistor serves as a fifth pin of the transistor Q209.
Furthermore, the Oring-FET turn-off circuit of the utility model also comprises a voltage stabilizing diode ZD 201;
the anode of the zener diode ZD201 is connected to a connection point between the collector of the PNP triode Q208 and the source of the NMOS field effect transistor, and the first end of the cathode of the zener diode ZD201, which is connected to the resistor R247, is connected to a connection point between the gate of the NMOS field effect transistor. The zener diode ZD201 can keep the voltage at two ends of the zener diode ZD201 constant when the power voltage fluctuates or the voltage at each point in the circuit fluctuates due to other reasons.
The working principle of the present invention's Oring-FET turn-off circuit is explained in detail below with reference to the schematic circuit diagram of FIG. 2:
the third pin of the transistor Q209 is connected to the drain of the NMOS transistor Q206 (i.e., the output bus), and the first pin of the transistor Q209 is connected to the source of the NMOS transistor Q206 (i.e., the power supply output) because the voltage of the power supply output is higher than the voltage of the output bus, i.e., the source voltage of the NMOS transistor Q206 is higher than the drain voltage, so that when the NMOS transistor is turned on in the forward direction, it is first turned on through the body diode of the NMOS transistor Q206, which causes the Vsd voltage drop of the NMOS transistor Q206.
For convenience of description, the transistor Q209 is embodied as the first NPN transistor and the second NPN transistor.
When the power supply normally works, the voltage (+12V) of the output bus is not changed, then the voltage of the collector (third pin) of the second NPN triode is +12V, because the second NPN triode has conduction voltage drop (e.g., 0.7V), the voltage of the base (fifth pin) of the second NPN triode is 12.7V, and because the base and the emitter (the fifth pin and the fourth pin) of the second NPN triode are shorted, the second NPN triode is cut off. Further, the base of the first NPN transistor is connected to the base (the second pin and the fifth pin) of the second NPN transistor, so that the voltage of the base of the first NPN transistor is also maintained at 12.7V. Firstly, the body diode of the NMOS transistor Q206 is turned on to cause Vsd voltage drop of the NMOS transistor Q206, when the NMOS transistor Q206 is linearly turned on, the output current of the NMOS transistor Q206 increases, and then the Vsd voltage drop of the NMOS transistor Q206 increases to cause the voltage of the emitter (first pin) of the first NPN transistor to increase, and when the output current increases to a certain value, the first NPN transistor is turned off, and then the auxiliary power supply (30VCC) can be output to the gate of the NMOS transistor Q206 through the resistor R207 and the diode D214, so that the NMOS transistor Q206 is normally turned on.
When the power module is short-circuited and failed, the voltage of the output bus is increased, that is, the voltage of the collector (third pin) of the second NPN transistor is increased, and the voltage of the base (second pin and fifth pin) of the corresponding first NPN transistor and the base (second pin and fifth pin) of the second NPN transistor is also increased, and at this time, the voltage of the base (second pin) of the first NPN transistor is greater than the voltage of the emitter (first pin), and the first NPN transistor is turned on, so that the voltage of the anode of the diode D214 is pulled down, and the diode D214 is turned off, so that the auxiliary power supply (30VCC) is applied to the base of the PNP transistor Q208 through the resistor R207, and therefore the Ibe current of the Q208 is amplified to Ice, and the driving voltage of the gate of the NMOS transistor Q206 is quickly pulled down to be equal to the voltage of the source thereof through the collector and the emitter of the PNP transistor Q208, and the NMOS transistor Q206 is quickly turned off.
To sum up, the utility model discloses an auxiliary turn-off circuit promotes drive circuit's driving force when certain power module short circuit became invalid to field effect transistor that the quick control corresponds turns off, avoids influencing the normal output of other parallel operation power, leads to system bus voltage unusual.
Correspond and the utility model discloses the above-mentioned embodiment provides the Oring-FET turn-off circuit, the utility model also provides a redundant parallel operation electrical power generating system.
As shown in fig. 3, the redundant parallel power supply system includes: the output end of each power supply module 100 is connected with the output bus through an Oring-FET turn-off circuit 200 respectively.
The Oring-FET turn-off circuit 200 herein may be any of the Oring-FET turn-off circuits of the previous embodiments.
Alternatively, the power module 100 includes, but is not limited to: the power supply comprises an AC-DC power supply module and a DC-DC power supply module.
The output terminal of each power module 100 is connected to the input terminal of its respective Oring-FET turn-off circuit 200, and the output terminal of the Oring-FET turn-off circuit 200 is connected to an output bus, which can be connected to a system terminal and supply power.
When the redundant parallel power system works normally, all the power modules 100 can work normally, and each power module 100 provides a voltage slightly higher than the output bus for the input end of the respective Oring-FET turn-off circuit 200. At this time, the field effect transistor in the Oring-FET turn-off circuit 200 is turned on, and the power supply module 100 charges the output bus.
When a power module 100 fails due to short-circuit, the field effect transistor in the Oring-FET turn-off circuit 200 corresponding to the failed power module 100 is rapidly turned off. Therefore, the influence on the normal output of other parallel operation power supplies can be avoided, the system bus voltage is abnormal, and the power supply reliability and stability of the system are improved.
It is to be understood that the foregoing examples merely represent preferred embodiments of the present invention, and that the description thereof is more specific and detailed, but not intended to limit the scope of the invention; it should be noted that, for those skilled in the art, the above technical features can be freely combined, and several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention; therefore, all changes and modifications that come within the meaning and range of equivalency of the claims are to be embraced within their scope.
Claims (9)
1. An Oring-FET turn-off circuit connected between a single power supply module and an output bus, the circuit comprising: a field effect transistor (10), an auxiliary turn-off circuit (20), and a drive circuit (30);
the input end of the field effect transistor (10) is connected with the output end of the power supply module, the output end of the field effect transistor (10) is connected with an output bus, and the driving circuit (30) is connected with the driving end of the field effect transistor (10) through the auxiliary turn-off circuit (20);
when the power supply module works normally, the driving circuit (30) drives the field effect transistor (10) to be conducted; when the power module is short-circuited and fails, the driving circuit (30) promotes the driving capability through the auxiliary turn-off circuit (20) and rapidly controls the field effect transistor (10) to be turned off.
2. The Oring-FET turn-off circuit according to claim 1, characterized in that the field effect transistor (10) is an NMOS field effect transistor, the source of which is connected to the output of the power supply module, the drain of which is connected to the output bus, and the gate of which is connected to the auxiliary turn-off circuit (20).
3. The Oring-FET turn-off circuit according to claim 2, characterized in that the auxiliary turn-off circuit (20) comprises: a PNP triode Q208, a diode D214 and a resistor R247;
the first end of the resistor R247 is connected with the grid electrode of the NMOS field effect transistor, the second end of the resistor R247 is connected with the cathode of the diode D214, the anode of the diode D214 is connected with the driving circuit (30), the collector electrode of the PNP triode Q208 is connected with the source electrode of the NMOS field effect transistor, and the emitter electrode of the PNP triode Q208 is connected with the connection point of the second end of the resistor R247 and the cathode of the diode D214.
4. The Oring-FET turn-off circuit according to claim 3, characterized in that the drive circuit (30) comprises: the resistor R206, the resistor R207, the diode D211 and the triode Q209; the triode Q209 comprises a first pin, a second pin, a third pin, a fourth pin, a fifth pin and a sixth pin;
a first pin of the triode Q209 is connected with the source of the NMOS field effect transistor, the second pin and the fifth pin of the triode Q209 are connected, the third pin of the triode Q209 is connected with the drain electrode of the NMOS field effect transistor, the fourth pin and the fifth pin of the triode Q209 are shorted, the fourth pin of the triode Q209 is connected with the second end of the resistor R206, a first end of the resistor R206 is connected with an auxiliary power supply for supplying power, a sixth pin of the triode Q209 is connected with an anode of the diode D214, the first end of the resistor R207 is connected with an auxiliary power supply for supplying power, the second end of the resistor R207 is connected with the base electrode of the PNP triode Q208 and then connected with the connection point of the sixth pin of the triode Q209 and the anode of the diode D214, the anode of the diode D211 is connected to the sixth pin of the transistor Q209, and the cathode of the diode D211 is connected to the first end of the resistor R207.
5. The Oring-FET turn-off circuit as claimed in claim 3, further comprising a zener diode ZD 201;
the anode of the zener diode ZD201 is connected to a connection point between the collector of the PNP triode Q208 and the source of the NMOS field effect transistor, and the cathode of the zener diode ZD201 is connected to a connection point between the first end of the resistor R247 and the gate of the NMOS field effect transistor.
6. The Oring-FET turn-off circuit of claim 2, wherein the NMOS field effect transistor model is SiRA20 DP.
7. The Oring-FET turn-off circuit as claimed in claim 4, wherein said transistor Q209 is model PBSS416 DS.
8. A redundant parallel power supply system, comprising: a plurality of power supply modules, the output of each power supply module being connected to the output bus via an Oring-FET turn-off circuit as claimed in any one of claims 1 to 7.
9. The redundant parallel power supply system of claim 8, wherein the power module comprises: an AC-DC power module and/or a DC-DC power module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022538978.7U CN213879790U (en) | 2020-11-04 | 2020-11-04 | Oring-FET turn-off circuit and redundant parallel operation power supply system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022538978.7U CN213879790U (en) | 2020-11-04 | 2020-11-04 | Oring-FET turn-off circuit and redundant parallel operation power supply system |
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| Publication Number | Publication Date |
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| CN213879790U true CN213879790U (en) | 2021-08-03 |
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| CN202022538978.7U Active CN213879790U (en) | 2020-11-04 | 2020-11-04 | Oring-FET turn-off circuit and redundant parallel operation power supply system |
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| CN (1) | CN213879790U (en) |
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