CN213878126U - Thin film deposition system for solar cell - Google Patents
Thin film deposition system for solar cell Download PDFInfo
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- CN213878126U CN213878126U CN202120160568.5U CN202120160568U CN213878126U CN 213878126 U CN213878126 U CN 213878126U CN 202120160568 U CN202120160568 U CN 202120160568U CN 213878126 U CN213878126 U CN 213878126U
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- 238000000427 thin-film deposition Methods 0.000 title claims description 24
- 238000000151 deposition Methods 0.000 claims abstract description 144
- 230000008021 deposition Effects 0.000 claims abstract description 124
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 62
- 239000010703 silicon Substances 0.000 claims abstract description 62
- 238000005229 chemical vapour deposition Methods 0.000 claims description 51
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 239000005543 nano-size silicon particle Substances 0.000 claims description 6
- 238000002161 passivation Methods 0.000 abstract description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 230000009647 facial growth Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 14
- 238000005086 pumping Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000007306 turnover Effects 0.000 description 3
- 241001391944 Commicarpus scandens Species 0.000 description 2
- 238000012864 cross contamination Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model provides a film deposition system for solar cell, this system includes: the hot wire deposition equipment is used for respectively depositing a first intrinsic layer and a second intrinsic layer of the solar cell on the first surface and the second surface of the silicon wafer to be deposited; the first plasma deposition equipment is used for depositing a first doping layer on the surface of one side of a silicon wafer to be deposited, wherein the first intrinsic layer is deposited on the surface; and the second plasma deposition equipment is used for depositing a second doping layer of the solar cell. The embodiment of the utility model provides a film deposition system for solar cell, through adopting hot filament deposition equipment, this hot filament deposition equipment can realize first intrinsic layer and the intrinsic layer of second preparation in the time, has avoided the interval time between first intrinsic layer and the intrinsic layer of second, and it is longer to have solved the time apart from first face growth intrinsic layer when forming crystalline silicon heterojunction solar cell among the prior art second intrinsic layer when growing, consequently leads to the passivation effect on second face intrinsic layer than poor technical problem.
Description
Technical Field
The utility model relates to a solar cell prepares technical field, concretely relates to a film deposition system for solar cell.
Background
In crystalline silicon solar cells, a class of more advanced and efficient structures is based on amorphous silicon/crystalline silicon heterojunction structures. For a crystalline silicon heterojunction solar cell, amorphous silicon-based thin films are deposited on two sides of a silicon wafer during manufacturing, generally, an intrinsic amorphous silicon (i type)/p type amorphous silicon thin film is deposited on one side, and an intrinsic amorphous silicon (i type)/n type amorphous silicon thin film is deposited on the other side. In the existing production equipment, the Deposition equipment for the two-sided amorphous silicon thin film includes two types, Plasma Enhanced Chemical Vapor Deposition (PECVD) and Hot Wire Chemical Vapor Deposition (HWCVD).
At present, the manufacturing process of the crystalline silicon heterojunction solar cell is generally an IN-IP (IN-internet protocol) or I-IN-P (IN-P) process flow, however, when the crystalline silicon heterojunction solar cell is formed by adopting the two process flows, the I layer on the first surface of the silicon wafer can be deposited within the first time, and the passivation effect is very good. However, during the deposition of the layer I on the second surface, the silicon wafer is turned over to be in one-time overall contact with the tray, or edge contact is performed, and meanwhile, the time for growing the layer I from the first surface is long through processes such as vacuum breaking, environment contact, vacuum pumping and the like, so that the passivation effect of the layer I on the second surface is poor.
SUMMERY OF THE UTILITY MODEL
In view of this, the embodiment of the present invention provides a thin film deposition system for a solar cell, so as to solve the technical problem in the prior art that the time from the first surface to the first surface is longer when the second surface I layer of a silicon wafer is grown when a crystalline silicon heterojunction solar cell is formed, and thus the passivation effect of the second surface I layer is relatively poor.
The embodiment of the utility model provides a technical scheme as follows: an embodiment of the utility model provides a film deposition system for solar cell, this system includes: the hot wire deposition equipment is used for respectively depositing a first intrinsic layer and a second intrinsic layer of the solar cell on the first surface and the second surface of the silicon wafer to be deposited; the first plasma deposition equipment is used for depositing a first doping layer on the surface of one side of a silicon wafer to be deposited, wherein the first intrinsic layer is deposited on the surface; and the second plasma deposition equipment is used for depositing a second doping layer on the surface of one side of the silicon wafer to be deposited, wherein the second doping layer is deposited on the surface of the other side of the silicon wafer to be deposited, and the second intrinsic layer is deposited on the surface of the other side of the silicon wafer to be deposited.
Optionally, the hot wire deposition device includes a hot wire chemical vapor deposition chamber, the first plasma deposition device includes a first plasma chemical vapor deposition chamber, the second plasma deposition device includes a second plasma chemical vapor deposition chamber, the hot wire chemical vapor deposition chamber and the first plasma chemical vapor deposition chamber are connected by a vacuum lock, and the first plasma chemical vapor deposition chamber and the second plasma chemical vapor deposition chamber are connected by a vacuum lock.
Optionally, the hot wire chemical vapor deposition chamber comprises: the first carrier plate is vertically arranged in the hot wire chemical vapor deposition cavity, the first hot wire structure and the second hot wire structure are respectively arranged on two sides of the first carrier plate, gas introduced into the hot wire chemical vapor deposition cavity is decomposed by heating the first hot wire structure and the second hot wire structure, and a first intrinsic layer and a second intrinsic layer are respectively deposited on a first surface and a second surface of a silicon wafer to be deposited, which are clamped on the first carrier plate.
Optionally, the first plasma chemical vapor deposition chamber and/or the second plasma chemical vapor deposition chamber includes: the second carrier plate is horizontally arranged in the cavity, and a first doping layer or a second doping layer is formed on the corresponding surface of the silicon wafer to be deposited on the second carrier plate through plasma generated in the cavity.
Optionally, the hot wire deposition apparatus further comprises: the first power supply is used for supplying power to the hot wire deposition equipment, the first plasma deposition equipment and/or the second plasma deposition equipment comprise a second power supply which is used for supplying power to the first plasma deposition equipment and/or the second plasma deposition equipment, and the second power supply is a very high frequency power supply.
Optionally, the hot wire deposition apparatus further comprises: first material loading cavity, the first cavity and the first unloading cavity of preheating, first material loading cavity with first adopt the vacuum lock to connect between the cavity of preheating, the first cavity of preheating passes through the vacuum lock to be connected the heater chemical vapor deposition cavity, the heater chemical vapor deposition cavity adopts the vacuum lock to connect first unloading cavity.
Optionally, the first plasma deposition apparatus further comprises: the second feeding cavity, the second preheating cavity and the second blanking cavity are connected in a vacuum locking mode, the second preheating cavity is connected with the second preheating cavity in a vacuum locking mode, the second preheating cavity is connected with the first plasma chemical vapor deposition cavity through the vacuum locking mode, and the first plasma chemical vapor deposition cavity is connected with the second blanking cavity in a vacuum locking mode.
Optionally, the second plasma deposition apparatus further comprises: the third feeding cavity is connected with the third preheating cavity in a vacuum lock mode, the third preheating cavity is connected with the second plasma chemical vapor deposition cavity in a vacuum lock mode, and the second plasma chemical vapor deposition cavity is connected with the third blanking cavity in a vacuum lock mode.
Optionally, the first intrinsic layer deposited by the hot wire deposition device is an intrinsic amorphous silicon thin film layer, and the second intrinsic layer deposited by the hot wire deposition device is an intrinsic amorphous silicon thin film layer.
Optionally, the first doping layer deposited by the first plasma deposition device is a doped microcrystalline \ nano silicon N-type layer, and the second doping layer deposited by the second plasma deposition device is a doped microcrystalline \ nano silicon P-type layer.
The utility model discloses technical scheme has following advantage:
the embodiment of the utility model provides a film deposition system for solar cell, through adopting hot filament deposition equipment, this hot filament deposition equipment can realize first intrinsic layer and the intrinsic layer of second preparation in the time, has avoided the interval time between first intrinsic layer and the intrinsic layer of second, and it is longer to have solved the time apart from first face growth intrinsic layer when forming crystalline silicon heterojunction solar cell among the prior art second intrinsic layer when growing, consequently leads to the passivation effect on second face intrinsic layer than poor technical problem. Meanwhile, no plasma (high-energy electrons and ions) exists in the hot wire deposition equipment, so that the silicon wafer is prevented from being bombarded and damaged by the plasma in the deposition process. In addition, if the first intrinsic layer and the second intrinsic layer are grown in the plasma deposition equipment, the silicon wafer is easy to break, and the broken silicon wafer falls into the chamber or on the gas distribution box, so that the chamber opening treatment is needed. Furthermore, the embodiment of the utility model provides a film deposition system for solar cell carries out the preparation of first doping layer and second doping layer respectively in first plasma deposition equipment and second plasma deposition equipment, compares and carries out the preparation of first doping layer and second doping layer in hot filament deposition equipment, can ensure the deposit homogeneity of first doping layer and second doping layer, can guarantee the deposition rate of first doping layer and second doping layer simultaneously.
Furthermore, a vacuum lock is arranged among the three cavities, and after the vacuum lock is closed, a vacuum-pumping system is adopted for vacuum-pumping so as to keep the vacuum state of the three cavities.
Further, the second power supply adopts a Very High Frequency (VHF) power supply, and the VHF excited plasma has lower electron temperature and higher density than the conventional radio frequency generated plasma, so that the deposition rate of the first doping layer and the second doping layer can be greatly improved by arranging the VHF power supply in the film deposition system for the solar cell.
Furthermore, when the hot wire deposition equipment, the first plasma deposition equipment and the second plasma deposition equipment are used for film deposition, different carrier plates are respectively adopted, so that the cross contamination can be effectively and completely isolated.
The embodiment of the utility model provides a solar cell's film deposition system accomplishes the deposit on two-sided intrinsic layer through setting up hot filament deposition equipment, has reduced the pollution on single face intrinsic layer, effectively improves the quality of passivation layer. Meanwhile, the hot wire deposition equipment is adopted to deposit the first intrinsic layer and the second intrinsic layer, so that the bombardment of electrons on silicon base is reduced compared with the plasma deposition equipment for depositing the intrinsic layer. In addition, the first intrinsic layer and the second intrinsic layer are deposited in the hot filament deposition equipment, and the method that heating wires are added on two sides of a single cavity is used.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the technical solutions in the prior art will be briefly described below, it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative work
Fig. 1 is a block diagram of a thin film deposition system for a solar cell according to an embodiment of the present invention;
fig. 2 is a block diagram of a thin film deposition system for a solar cell according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a silicon wafer to be deposited according to an embodiment of the present invention, in which a first intrinsic layer, a second intrinsic layer, a first doped layer and a second doped layer are deposited;
fig. 4 is a block diagram of a thin film deposition system for a solar cell according to another embodiment of the present invention.
Detailed Description
As described IN the background art, the process flow of IN-IP (i.e. first growing an intrinsic layer and a doped layer on one surface of a silicon wafer, and then growing an intrinsic layer and a doped layer on the other surface of the silicon wafer) or I-IN-P (i.e. first growing an intrinsic layer on one surface of a silicon wafer, then turning over, growing an intrinsic layer and a doped layer on the other surface of the silicon wafer, then turning over, and growing a doped layer on the surface of the intrinsic layer on the silicon wafer) is adopted, the time for growing the intrinsic layer on the first surface is longer when growing the intrinsic layer on the second surface, so that the passivation effect of the I layer on the second surface is poor.
Based on this, the utility model provides a thin film deposition system for solar cell includes: the hot wire deposition equipment is used for respectively depositing a first intrinsic layer and a second intrinsic layer of the solar cell on the first surface and the second surface of the silicon wafer to be deposited; the first plasma deposition equipment is used for depositing a first doping layer on the surface of one side of a silicon wafer to be deposited, wherein the first intrinsic layer is deposited on the surface; and the second plasma deposition equipment is used for depositing a second doping layer on the surface of one side of the silicon wafer to be deposited, wherein the second doping layer is deposited on the surface of the other side of the silicon wafer to be deposited, and the second intrinsic layer is deposited on the surface of the other side of the silicon wafer to be deposited.
The technical solution of the present invention will be described clearly and completely with reference to the accompanying drawings, and obviously, the described embodiments are some, but not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Furthermore, the technical features mentioned in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other.
An embodiment of the utility model provides a thin film deposition system for solar cell, as shown in fig. 1 and as shown in fig. 3, this equipment includes: the hot wire deposition device 10 is used for respectively depositing a first intrinsic layer 2 and a second intrinsic layer 3 of the solar cell on the first surface and the second surface of the silicon wafer to be deposited; the first plasma deposition device 20 is used for depositing a first doping layer 4 on the surface of one side of the silicon wafer to be deposited, wherein the first intrinsic layer is deposited; and the second plasma deposition equipment 30 is used for depositing a second doping layer 5 on the surface of one side of the silicon wafer to be deposited, wherein the second doping layer is deposited on the surface of one side of the silicon wafer to be deposited, and the second intrinsic layer is deposited on the surface of the silicon wafer to be deposited. The structure of the silicon wafer 1 to be deposited after the first intrinsic layer 2, the second intrinsic layer 3, the first doped layer 4 and the second doped layer 5 are deposited is shown in fig. 2. In one embodiment, the first intrinsic layer 2 and the second intrinsic layer 3 may be fabricated simultaneously in the hot filament deposition apparatus 10, and in this case, the fabrication environment required for the first intrinsic layer 2 and the second intrinsic layer 3 is the same.
The embodiment of the utility model provides a film deposition system for solar cell, through adopting hot filament deposition equipment, this hot filament deposition equipment can realize first intrinsic layer 2 and the intrinsic layer 3 preparation in the time of second, has avoided the interval time between first intrinsic layer 2 and the intrinsic layer 3 of second, and the time apart from first face growth intrinsic layer is longer when having solved the intrinsic layer growth of second face when forming crystal silicon heterojunction solar cell among the prior art, consequently leads to the passivation effect of second face intrinsic layer than poor technical problem. Meanwhile, no plasma (high-energy electrons and ions) exists in the hot wire deposition equipment, so that the silicon wafer is prevented from being bombarded and damaged by the plasma in the deposition process. In addition, if the first intrinsic layer 2 and the second intrinsic layer 3 are grown in the plasma deposition equipment, the silicon wafer is easy to break, and the broken silicon wafer falls into the chamber or on the gas distribution box, so that the chamber opening treatment is needed. In addition, the embodiment of the utility model provides a film deposition system for solar cell carries out the preparation of first doping layer 4 and second doping layer 5 respectively in first plasma deposition equipment and second plasma deposition equipment, compares and carries out the preparation of first doping layer 4 and second doping layer 5 in hot filament deposition equipment, can ensure the deposition uniformity of first doping layer 4 and second doping layer 5, can guarantee the deposition rate of first doping layer 4 and second doping layer 5 simultaneously.
In an embodiment, as shown in fig. 2, the hot wire deposition apparatus 10 includes a hot wire chemical vapor deposition chamber 101, the first plasma deposition apparatus 20 includes a first plasma chemical vapor deposition chamber 201, the second plasma deposition apparatus 30 includes a second plasma chemical vapor deposition chamber 301, the hot wire chemical vapor deposition chamber 101 and the first plasma chemical vapor deposition chamber 201 are connected by a vacuum lock 40, and the first plasma chemical vapor deposition chamber 201 and the second plasma chemical vapor deposition chamber 301 are connected by a vacuum lock 40. Specifically, when performing thin film deposition, the hot filament chemical vapor deposition chamber 101, the first plasma chemical vapor deposition chamber 201, and the second plasma chemical vapor deposition chamber 301 need to maintain the vacuum state of the chambers, and therefore, a vacuum pumping system may be further provided in the thin film deposition system for a solar cell, and the vacuum pumping system is connected to the three chambers respectively to ensure the vacuum state of the three chambers. Meanwhile, a vacuum lock 40 is arranged among the three cavities, and after the vacuum lock 40 is closed, a vacuum-pumping system is adopted for vacuum-pumping so as to keep the vacuum states of the three cavities.
In one embodiment, a hot wire chemical vapor deposition chamber comprises: the first carrier plate is vertically arranged in the hot wire chemical vapor deposition cavity, the first hot wire structure and the second hot wire structure are respectively arranged on two sides of the first carrier plate, gas introduced into the hot wire chemical vapor deposition cavity is decomposed by heating the first hot wire structure and the second hot wire structure, and a first intrinsic layer and a second intrinsic layer are respectively deposited on a first surface and a second surface of a silicon wafer to be deposited, which is clamped on the first carrier plate. As shown in fig. 4, the first carrier plate in the hot wire chemical vapor deposition chamber 101 may be a vertical carrier plate. Specifically, the vertical carrier plate 14 may fix the frame of the silicon wafer 1 to be deposited, and expose the regions to be deposited on the two surfaces, so as to avoid affecting the deposition of the thin film on the regions to be deposited on the two surfaces. In a specific embodiment, after the silicon wafer 1 to be deposited is fixed by using the vertical carrier 14, the preparation of the first intrinsic layer 2 and the second intrinsic layer 3 on the two surfaces of the silicon wafer 1 to be deposited can be realized by using hot wires arranged on the two sides of the vertical carrier 14.
In one embodiment, the first plasma chemical vapor deposition chamber and/or the second plasma chemical vapor deposition chamber comprises: and the second carrier plate is horizontally arranged in the cavity, and a first doping layer or a second doping layer is formed on the corresponding surface of the silicon wafer to be deposited on the second carrier plate through the plasma generated in the cavity. As shown in fig. 4, the second carrier plate in the first plasma chemical vapor deposition chamber 201 and/or the second plasma chemical vapor deposition chamber 301 may be a horizontal carrier plate. In one embodiment, as shown in fig. 3, the silicon wafer 1 to be deposited in the first plasma cvd chamber 201 is disposed on the first horizontal carrier plate 24, and the silicon wafer 1 to be deposited in the second plasma cvd chamber 301 is disposed on the second horizontal carrier plate 34.
In one embodiment, the thin film deposition system for a solar cell, the filament deposition apparatus further includes: the first power supply is used for supplying power to the hot wire deposition equipment, the first plasma deposition equipment and/or the second plasma deposition equipment comprises a second power supply which is used for supplying power to the first plasma deposition equipment and/or the second plasma deposition equipment, and the second power supply is a very high frequency power supply. In particular, since the plasma excited by a Very High Frequency (VHF) power supply has a lower temperature and a higher density of electrons than those of the conventional rf-generated plasma, the deposition rate of the first and second doping layers 4 and 5 can be greatly increased by providing the VHF power supply in the thin film deposition system for a solar cell.
In one embodiment, as shown in FIG. 4, the hot wire deposition apparatus 10 further comprises: first material loading cavity 11, first preheating cavity 12 and first unloading cavity 13 adopt vacuum lock 40 to connect between first material loading cavity 11 and the first preheating cavity 12, and first preheating cavity 12 passes through vacuum lock 40 and connects hot filament chemical vapor deposition cavity 101, and hot filament chemical vapor deposition cavity 101 adopts vacuum lock 40 to connect first unloading cavity 13.
In one embodiment, as shown in fig. 4, the first plasma deposition apparatus 20 further includes: the second feeding cavity 21, the second preheating cavity 22 and the second blanking cavity 23 are connected by a vacuum lock 40, the second preheating cavity 21 and the second preheating cavity 22 are connected by a vacuum lock 40, the second preheating cavity 22 is connected with the first plasma chemical vapor deposition cavity 201 by the vacuum lock 40, and the first plasma chemical vapor deposition cavity 201 is connected with the second blanking cavity 23 by the vacuum lock 40.
In an embodiment, as shown in fig. 4, the second plasma deposition apparatus further includes: the third feeding cavity 31, the third preheating cavity 32 and the third blanking cavity 33 are connected through a vacuum lock 40, the third preheating cavity 32 is connected with the second plasma chemical vapor deposition cavity 301 through the vacuum lock 40, and the second plasma chemical vapor deposition cavity 301 is connected with the third blanking cavity 33 through the vacuum lock 40.
The embodiment of the utility model provides a solar cell's film deposition system through set up material loading cavity and unloading cavity respectively in hot filament deposition equipment 10, first plasma deposition equipment 20 and second plasma deposition equipment 30, can get rid of the harmful gas in the middle of the air like ozone, oxide and sulphide etc.. Meanwhile, a heating system can be arranged in the equipment to connect with the three preheating cavities, so that preheating of the three cavities is realized. In addition, according to the requirement, an ultra-pure gas path system, a heating system or a cooling water system and the like can be externally connected to the hot wire deposition device 10, the first plasma deposition device 20 and the second plasma deposition device 30, so that each cavity can normally and stably work.
In one embodiment, as shown in fig. 4, the thin film deposition system of the solar cell may sequentially include: the device comprises a first feeding cavity 11, a first preheating cavity 12, a hot wire chemical vapor deposition cavity 101, a first blanking cavity 13, a replacement support plate 25, a second feeding cavity 21, a second preheating cavity 22, a first plasma chemical vapor deposition cavity 201, a second blanking cavity 23, a turnover and replacement support plate 35, a third feeding cavity 31, a third preheating cavity 32, a second plasma chemical vapor deposition cavity 301 and a third blanking cavity 33. Wherein the replacing carrier plate 25 can replace the silicon wafer 1 to be deposited on the vertical carrier plate 14 onto the first horizontal carrier plate 24. The turnover and replacement carrier plate 35 can turn over the silicon wafer 1 to be deposited on which the first doping layer 4 is deposited and replace the silicon wafer onto the second horizontal carrier plate 34, and the second doping layer 5 is deposited in the second plasma chemical vapor deposition chamber 301. The embodiment of the utility model provides a solar cell's film deposition system when hot filament deposition equipment 10, first plasma deposition equipment 20 and second plasma deposition equipment 30 carry out film deposition, adopts different support plates respectively, can effectively keep apart cross contamination completely.
In one embodiment, the first intrinsic layer 2 is an intrinsic amorphous silicon thin film layer, and the second intrinsic layer 3 is an intrinsic amorphous silicon thin film layer. The first doping layer 4 is a doped microcrystalline \ nano silicon N-type layer, and the second doping layer 5 is a doped microcrystalline \ nano silicon P-type layer.
The embodiment of the utility model provides a solar cell's film deposition system, when using, each cavity is by its external vacuum system keep vacuum state before treating that deposited silicon chip 1 does not get into. As shown in FIG. 4, the thin film deposition system is operated by first fixing a silicon wafer 1 to be deposited on a vertical carrier plate 14; breaking vacuum in the first feeding cavity 11, opening a feeding end of the first feeding cavity 11, feeding a vertical carrier plate 14 for placing a silicon wafer 1 to be deposited into the first feeding cavity 11 by a moving device, vacuumizing, opening a vacuum lock 40 between the first feeding cavity 11 and a first preheating cavity 12, feeding the vertical carrier plate 14 into the first preheating cavity 12, closing the vacuum lock 40, vacuumizing for preheating, wherein preheating can be completed by a cavity or an external heating system, and opening the vacuum lock 40 between the first preheating cavity 12 and a hot wire chemical vapor deposition cavity 101 after reaching a preset vacuum degree and temperature; the vertical carrier plate 14 is sent into a hot filament chemical vapor deposition chamber 101, and the vacuum lock 40 is closed; depositing the first intrinsic layer 2 and the second intrinsic layer 3 in the hot wire chemical vapor deposition cavity 101, pumping out residual reaction gas after deposition is finished, blowing the residual reaction gas after reaching the required vacuum degree, opening the vacuum lock 40 between the hot wire chemical vapor deposition cavity 101 and the first blanking cavity 13, moving the vertical carrier plate 14 to the first blanking cavity 13, then closing the vacuum lock 40, putting nitrogen into the vacuum lock 40, and opening the vacuum lock 40 after the vacuum lock is broken. The silicon wafer 1 to be deposited on the vertical carrier plate 14 is moved onto the first horizontal carrier plate 24.
Fixing the silicon wafer 1 to be deposited on the first horizontal carrier plate 24; breaking vacuum of the second feeding cavity 21, opening a feeding end of the second cavity, feeding the first horizontal carrier plate 24 into the second feeding cavity 21 by a moving device, then vacuumizing, opening a vacuum lock 40 between the second feeding cavity 21 and a second preheating cavity 22, feeding the first horizontal carrier plate 24 into the second preheating cavity 22, closing the vacuum lock 40, vacuumizing for preheating, wherein preheating can be completed by a cavity or an external heating system, and opening the vacuum lock 40 between the second preheating cavity 22 and the first plasma chemical vapor deposition cavity 201 after reaching a predetermined vacuum degree and temperature; closing the vacuum lock 40 in the first plasma chemical vapor deposition chamber 201; depositing the first doping layer 4 in the first plasma chemical vapor deposition cavity 201, pumping out residual reaction gas after deposition is finished, opening the vacuum lock 40 between the first PECVD cavity and the second blanking cavity 23 after the residual reaction gas is purged by reaching the required vacuum degree, moving the first horizontal carrier plate 24 to the second blanking cavity 23, then closing the vacuum lock 40, putting nitrogen into the vacuum lock, and opening the vacuum lock 40 after the vacuum lock is broken. And moving the silicon wafer 1 to be deposited on the first horizontal carrier plate 24 to the second horizontal carrier plate 34, and turning over.
Fixing the silicon wafer 1 to be deposited after being turned over on a second horizontal carrier plate 34; breaking vacuum of the third feeding cavity 31, opening a feeding end of the third feeding cavity 31, feeding the second horizontal carrier plate 34 into the third feeding cavity 31 by a moving device, then vacuumizing, opening a vacuum lock 40 between the third feeding cavity 31 and a third preheating cavity 32, feeding the second horizontal carrier plate 34 into the third preheating cavity 32, closing the vacuum lock 40, vacuumizing for preheating, wherein preheating can be completed by a cavity or an external heating system, and opening the vacuum lock 40 between the third preheating cavity 32 and the second plasma chemical vapor deposition cavity 301 after reaching a preset vacuum degree and temperature; closing the vacuum lock 40 in the second plasma chemical vapor deposition chamber 301; and depositing the second doping layer 5 in the second plasma chemical vapor deposition cavity 301, pumping out residual reaction gas after deposition is finished, opening the vacuum lock 40 between the second plasma chemical vapor deposition cavity 301 and the third blanking cavity 33 after the residual reaction gas is swept and the required vacuum degree is reached, moving the second horizontal carrier plate 34 to the third blanking cavity 33, then closing the vacuum lock 40, putting in nitrogen, and opening the vacuum lock 40 after the vacuum is broken. And (4) conveying the silicon wafer with the II-N-P to the subsequent process.
The embodiment of the utility model provides a solar cell's film deposition system accomplishes the deposit on two-sided intrinsic layer through setting up hot filament deposition equipment 10, has reduced the pollution on single face intrinsic layer, effectively improves the quality of passivation layer. At the same time, the use of the hot filament deposition apparatus 10 to deposit the first and second intrinsic layers 2, 3 reduces electron bombardment of the silicon substrate compared to the use of a plasma deposition apparatus to deposit the intrinsic layers. In addition, the first intrinsic layer 2 and the second intrinsic layer 3 are deposited in the hot filament deposition device 10, and a method of adding heating wires on two sides of a single chamber is used, so that compared with a method of depositing a second integral layer of the first intrinsic layer 2 by using two plasma deposition devices respectively, the method reduces the investment of early cost.
Although the present invention has been described in detail with respect to the exemplary embodiments and the advantages thereof, those skilled in the art will appreciate that various changes, substitutions and alterations can be made to the embodiments without departing from the spirit of the invention and the scope of the invention as defined by the appended claims. For other examples, one of ordinary skill in the art will readily appreciate that the order of the process steps may be varied while maintaining the scope of the present invention.
Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present invention, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present invention. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.
Claims (10)
1. A thin film deposition system for a solar cell, comprising:
the hot wire deposition equipment is used for respectively depositing a first intrinsic layer and a second intrinsic layer of the solar cell on the first surface and the second surface of the silicon wafer to be deposited;
the first plasma deposition equipment is used for depositing a first doping layer on the surface of one side of the silicon wafer to be deposited, wherein the first doping layer is deposited on the surface of one side of the first intrinsic layer;
and the second plasma deposition equipment is used for depositing a second doping layer on the surface of one side of the silicon wafer to be deposited, wherein the second doping layer is deposited on the surface of one side of the second intrinsic layer.
2. The thin film deposition system for a solar cell of claim 1, wherein the hot wire deposition apparatus comprises a hot wire chemical vapor deposition chamber, the first plasma deposition apparatus comprises a first plasma chemical vapor deposition chamber, the second plasma deposition apparatus comprises a second plasma chemical vapor deposition chamber, a vacuum lock connection is adopted between the hot wire chemical vapor deposition chamber and the first plasma chemical vapor deposition chamber, and a vacuum lock connection is adopted between the first plasma chemical vapor deposition chamber and the second plasma chemical vapor deposition chamber.
3. The thin film deposition system for a solar cell according to claim 2, wherein the hot wire chemical vapor deposition chamber comprises: the first carrier plate is vertically arranged in the hot wire chemical vapor deposition cavity, the first hot wire structure and the second hot wire structure are respectively arranged on two sides of the first carrier plate, gas introduced into the hot wire chemical vapor deposition cavity is decomposed by heating the first hot wire structure and the second hot wire structure, and a first intrinsic layer and a second intrinsic layer are respectively deposited on a first surface and a second surface of a silicon wafer to be deposited, which are clamped on the first carrier plate.
4. The thin film deposition system for a solar cell according to claim 2, wherein the first plasma chemical vapor deposition chamber and/or the second plasma chemical vapor deposition chamber comprises: the second carrier plate is horizontally arranged in the cavity, and a first doping layer or a second doping layer is formed on the corresponding surface of the silicon wafer to be deposited on the second carrier plate through plasma generated in the cavity.
5. The thin film deposition system for a solar cell according to claim 1, wherein the hot wire deposition apparatus further comprises: the first power supply is used for supplying power to the hot wire deposition equipment, the first plasma deposition equipment and/or the second plasma deposition equipment comprise a second power supply which is used for supplying power to the first plasma deposition equipment and/or the second plasma deposition equipment, and the second power supply is a very high frequency power supply.
6. The thin film deposition system for a solar cell according to claim 2, wherein the hot wire deposition apparatus further comprises: first material loading cavity, the first cavity and the first unloading cavity of preheating, first material loading cavity with first adopt the vacuum lock to connect between the cavity of preheating, the first cavity of preheating passes through the vacuum lock to be connected the heater chemical vapor deposition cavity, the heater chemical vapor deposition cavity adopts the vacuum lock to connect first unloading cavity.
7. The thin film deposition system for a solar cell according to claim 2, wherein the first plasma deposition apparatus further comprises: the second feeding cavity, the second preheating cavity and the second blanking cavity are connected in a vacuum locking mode, the second preheating cavity is connected with the second preheating cavity in a vacuum locking mode, the second preheating cavity is connected with the first plasma chemical vapor deposition cavity through the vacuum locking mode, and the first plasma chemical vapor deposition cavity is connected with the second blanking cavity in a vacuum locking mode.
8. The thin film deposition system for a solar cell according to claim 2, wherein the second plasma deposition apparatus further comprises: the third feeding cavity is connected with the third preheating cavity in a vacuum lock mode, the third preheating cavity is connected with the second plasma chemical vapor deposition cavity in a vacuum lock mode, and the second plasma chemical vapor deposition cavity is connected with the third blanking cavity in a vacuum lock mode.
9. The thin film deposition system for a solar cell according to any one of claims 1 to 8, wherein the first intrinsic layer deposited by the hot wire deposition apparatus is an intrinsic amorphous silicon thin film layer, and the second intrinsic layer deposited by the hot wire deposition apparatus is an intrinsic amorphous silicon thin film layer.
10. The thin film deposition system for a solar cell of any one of claims 1 to 8, wherein the first doped layer deposited by the first plasma deposition device is a doped microcrystalline \ nano-silicon N-type layer, and the second doped layer deposited by the second plasma deposition device is a doped microcrystalline \ nano-silicon P-type layer.
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| WO2024027294A1 (en) * | 2022-08-01 | 2024-02-08 | 隆基绿能科技股份有限公司 | Hot wire chemical vapor deposition apparatus, silicon-based thin film deposition method and solar cell |
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| WO2024027294A1 (en) * | 2022-08-01 | 2024-02-08 | 隆基绿能科技股份有限公司 | Hot wire chemical vapor deposition apparatus, silicon-based thin film deposition method and solar cell |
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