CN213816198U

CN213816198U - Flexible OLED device structure

Info

Publication number: CN213816198U
Application number: CN202022516062.1U
Authority: CN
Inventors: 温质康; 林佳龙; 乔小平
Original assignee: Fujian Huajiacai Co Ltd
Current assignee: Fujian Huajiacai Co Ltd
Priority date: 2020-11-04
Filing date: 2020-11-04
Publication date: 2021-07-27
Anticipated expiration: 2030-11-04

Abstract

The utility model relates to a OLED device technical field, in particular to flexible OLED device structure, including glass substrate and cutting insulated column, it is equipped with the polyimide thin layer to stack gradually on a side of glass substrate, the isolation layer, TFT device layer, OLED device layer and TFE encapsulated layer, the TFE encapsulated layer is passed in proper order to the one end of cutting insulated column, OLED device layer and TFT device layer and isolation layer contact, the other end relative with the one end of cutting insulated column extends TFE encapsulated layer outside, can solve the laser cutting in-process like this, the cracked-up phenomenon of the inorganic layer that arouses during laser cutting TFT device layer and TFE encapsulated layer, avoid leading to the problem of luminescent material (extremely sensitive to light) inefficacy in the OLED device, improve the efficiency and the yield that laser peeled off, and the life-span of OLED device stability and extension device has been improved.

Description

Flexible OLED device structure

Technical Field

The utility model relates to a OLED device technical field, in particular to flexible OLED device structure.

Background

The Organic Light Emitting Diode (abbreviated as OLED) display has the characteristics of low power consumption, wide viewing angle, high definition and contrast, high response speed, wide use temperature range, ultra-Light weight, thinness, good shock resistance and the like, is increasingly applied to a high-performance display area as an autonomous Light Emitting device, can realize various advantages such as flexible display and large-area full color display, and is considered as a display device with the most development potential by the industry;

at present, the laser cutting of the flexible OLED device is to use a focusing mirror to focus UV or CO₂The laser beam is focused on the cutting position on the surface of the glass substrate to melt the glass substrate, and meanwhile, the melted panel material is sucked away by using compressed gas coaxial with the laser beam, and the laser beam and the panel move relatively along a certain track, so that a cutting seam with a certain shape is formed;

the TFT device layer is prepared by preparing devices on the whole surface of the glass substrate, the inorganic layer on the glass substrate is cut while the substrate is cut by laser, cracks (cracks) are easily generated on the inorganic layer, the cracks are transmitted to the effective display area in the bending process of the flexible OLED device, the risk of failure of the OLED device exists, and the service life of the OLED device and the yield of products are influenced.

SUMMERY OF THE UTILITY MODEL

The utility model discloses the technical problem that will solve is: a flexible OLED device structure is provided.

In order to solve the technical problem, the utility model discloses a technical scheme be:

the utility model provides a flexible OLED device structure, includes glass substrate and cutting insulated column, it is equipped with polyimide thin layer, isolation layer, TFT device layer, OLED device layer and TFE encapsulation layer to stack gradually on one side of glass substrate, the one end of cutting insulated column passes TFE encapsulation layer, OLED device layer and TFT device layer and isolation layer contact in proper order, with the other end that the one end of cutting insulated column is relative extends to TFE encapsulation layer outside.

The beneficial effects of the utility model reside in that:

through range upon range of in proper order on a side at glass substrate and set up the polyimide thin film layer, the isolation layer, the TFT device layer, OLED device layer and TFE encapsulated layer, the TFE encapsulated layer is passed in proper order to the one end of cutting insulated column, OLED device layer and TFT device layer contact with the isolation layer, the other end relative with the one end of cutting insulated column extends to TFE encapsulated layer outside, can solve the laser cutting in-process like this, the cracked phenomenon of the inorganic layer that arouses during laser cutting TFT device layer and TFE encapsulated layer, avoid leading to the problem that luminescent material (extremely sensitive to light) became invalid in the OLED device, the efficiency and the yield that improve laser and peel off, and the life-span of OLED device stability and extension device has been improved.

Drawings

Fig. 1 is a schematic structural view of a flexible OLED device structure according to the present invention;

description of reference numerals:

1. a glass substrate; 2. cutting the isolation column; 3. a polyimide film layer; 4. an isolation layer; 5. a TFT device layer; 6. an OLED device layer; 7. a TFE encapsulating layer.

Detailed Description

In order to explain the technical content, the objects and the effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.

Referring to fig. 1, the present invention provides a technical solution:

From the above description, the beneficial effects of the present invention are:

Further, the thickness of the cutting isolation column ranges from 6 μm to 10 μm, and the width of the cutting isolation column ranges from 0.02 μm to 0.04 μm.

As can be seen from the above description, setting the thickness of the cut spacer in the range of 6 μm to 10 μm and the width of the cut spacer in the range of 0.02 μm to 0.04 μm can further improve the efficiency and yield of laser lift-off.

Further, the thickness of the isolation layer ranges from 0.01 μm to 0.02 μm.

As can be seen from the above description, setting the thickness of the spacer layer in the range of 0.01 μm to 0.02 μm can further improve the efficiency and yield of laser lift-off.

Furthermore, the isolation layer is made of a metal simple substance or a metal oxide.

Further, the thickness of the polyimide film layer is 2-4 μm.

Referring to fig. 1, a first embodiment of the present invention is:

the utility model provides a flexible OLED device structure, includes glass substrate 1 and cutting insulated column 2, it is equipped with polyimide thin layer 3, isolation layer 4, TFT device layer 5, OLED device layer 6 and TFE encapsulation layer 7 to stack gradually on glass substrate 1's a side, the one end of cutting insulated column 2 passes TFE encapsulation layer 7, OLED device layer 6 and TFT device layer 5 and isolation layer 4 contact in proper order, with the other end that the one end of cutting insulated column 2 is relative extends to TFE encapsulation layer 7 outside.

The thickness of the cut spacer 2 ranges from 6 μm to 10 μm, preferably 8 μm, and the width of the cut spacer 2 ranges from 0.02 μm to 0.04 μm, preferably 0.03 μm.

The thickness of the spacer layer 4 is in the range of 0.01 μm to 0.02 μm, preferably 0.015 μm.

The isolation layer 4 is made of a metal simple substance or a metal oxide.

The TFT device layer 5 is selected from an etching barrier type metal oxide thin film transistor, and the OLED device layer 6 comprises an anode, a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, an electron injection layer and a cathode; the light emitting mechanism of the OLED device layer 6 is that two carriers, namely electrons and holes, are injected into the organic light emitting layer and are recombined in the organic light emitting layer to emit light; the TFE encapsulation layer 7 includes an organic layer and an inorganic layer, and plays a role in isolating water and oxygen and protecting the OLED device layer and the TFT device layer.

Coating a polyimide film layer 3 on the glass substrate 1 through a Coater (developing) machine, and forming a flexible substrate through curing;

the isolation layer 4 separates the flexible substrate from the upper cut isolation column 2, and prevents damage to the lower flexible substrate when the cut isolation column 2 is peeled off, and the material of the isolation layer 4 is not limited to metal Ag, Al, metal oxide ITO, AZO, IGZO, and the like.

The thickness of the polyimide film layer 3 is 2 μm to 4 μm, preferably 3 μm.

To sum up, the utility model provides a pair of flexible OLED device structure, through range upon range of in proper order on a side of glass substrate and set up the polyimide thin layer, the isolation layer, TFT device layer, OLED device layer and TFE encapsulated layer, the TFE encapsulated layer is passed in proper order to the one end of cutting insulated column, OLED device layer and TFT device layer and isolation layer contact, the other end relative with the one end of cutting insulated column extends TFE encapsulated layer outside, can solve the laser cutting in-process like this, the cracked phenomenon of the inorganic layer that arouses during laser cutting TFT device layer and TFE encapsulated layer, avoid leading to the problem of luminescent material (extremely sensitive to light) inefficacy in the OLED device, improve the efficiency and the yield that laser was peeled off, and the life-span of OLED device stability and extension device has been improved.

The above mentioned is only the embodiment of the present invention, and not the limitation of the patent scope of the present invention, all the equivalent transformations made by the contents of the specification and the drawings, or the direct or indirect application in the related technical field, are included in the patent protection scope of the present invention.

Claims

1. The utility model provides a flexible OLED device structure, its characterized in that includes glass substrate and cutting insulated column, it is equipped with polyimide thin layer, isolation layer, TFT device layer, OLED device layer and TFE encapsulation layer to stack gradually on one side of glass substrate, the one end of cutting insulated column passes TFE encapsulation layer, OLED device layer and TFT device layer and isolation layer contact in proper order, with the other end that the one end of cutting insulated column is relative extends to TFE encapsulation layer outside.

2. The flexible OLED device structure of claim 1, wherein the thickness of the cut spacer pillar ranges from 6 μ ι η to 10 μ ι η and the width of the cut spacer pillar ranges from 0.02 μ ι η to 0.04 μ ι η.

3. The flexible OLED device structure of claim 1, wherein the isolation layer has a thickness in a range of 0.01-0.02 μ ι η.

4. The flexible OLED device structure of claim 1, wherein the isolation layer is made of a simple metal or a metal oxide.

5. The flexible OLED device structure of claim 1, wherein the thickness of the polyimide thin film layer is 2-4 μ ι η.