CN213752741U

CN213752741U - Light emitting element, and package structure and optoelectronic system including the same

Info

Publication number: CN213752741U
Application number: CN202022462171.XU
Authority: CN
Inventors: 林俊宇; 李俊毅; 邱毅扬; 陈怡名; 李世昌; 王种皓; 张峻玮
Original assignee: Epistar Corp
Current assignee: Epistar Corp
Priority date: 2019-03-21
Filing date: 2020-03-19
Publication date: 2021-07-20
Anticipated expiration: 2030-03-19
Also published as: CN211980634U; TW202341525A; TWI809953B; TW202240934A; TWI771664B; TW202036932A

Abstract

The utility model discloses a light emitting component reaches packaging structure and optoelectronic system who contains light emitting component, wherein light emitting component contains base plate, luminous stromatolite, upper electrode, contact structure and contact layer. The light-emitting lamination is positioned on the substrate and is provided with a light-emitting surface. The light emitting stack comprises a plurality of semiconductor layers. The upper electrode is positioned on the light-emitting surface and comprises an electrode part, a first extension part and a plurality of second extension parts. The electrode portion has a first electrode portion and a second electrode portion with a first width. The first electrode portion and the second electrode portion do not overlap in the horizontal direction. The first extension portion is electrically connected with the electrode portion and has a second width. Each second extension part is connected with the first extension part or connected with the first electrode part and the second electrode part and has a third width. The second width is between the first width and the third width. The contact structure is located between the light-emitting laminated layer and the substrate and does not overlap with the upper electrode in a direction perpendicular to the light-emitting laminated layer. The contact layer is located between the upper electrode and the light emitting laminated layer.

Description

Light emitting element, and package structure and optoelectronic system including the same

The application is a divisional application of Chinese utility model patent application (application number: 202020350358.8, application date: 2020, 03 and 19, and utility model name: light-emitting element, packaging structure containing the light-emitting element and photoelectric system).

Technical Field

The present invention relates to a light emitting device, and more particularly, to a light emitting device with good current spreading effect.

Background

Optoelectronic components, such as Light-Emitting diodes (LEDs), are widely used in optical displays, traffic lights, data storage devices, communication devices, lighting devices, and medical devices. Currently, the light emitting diode still has the problem of uneven current distribution, which causes low light emitting efficiency.

SUMMERY OF THE UTILITY MODEL

An object of the present invention is to provide a light emitting device to solve the above problems.

To achieve the above object, the present invention provides a light emitting device, comprising: a substrate; a light emitting stack on the substrate, the light emitting stack having a light emitting surface and including a plurality of semiconductor layers; an upper electrode on the light emitting surface, the upper electrode comprising: an electrode portion including a first electrode portion and a second electrode portion having a first width, the first electrode portion and the second electrode portion not overlapping in a horizontal direction; a first extension part electrically connected with the electrode part and having a second width; one of the second extending parts is connected with the first extending part, the first electrode part or the second electrode part and has a third width, and the second width is between the first width and the third width; a contact structure located between the light emitting lamination and the substrate and not overlapped with the upper electrode in a direction perpendicular to the light emitting lamination; and a contact layer between the upper electrode and the light emitting stack.

According to an embodiment, the light emitting device further includes a first window layer located between the light emitting stack layer and the contact layer, and a surface of the first window layer is a roughened surface.

According to an embodiment, the width of the first extension portion is gradually changed, and the second width is the maximum width of the first extension portion.

According to an embodiment, a current channel region is defined at a position on the light-emitting surface corresponding to the contact structure, and the current channel region is located between any two adjacent second extension portions and the first extension portion; wherein the first extension portion has a shortest distance D1 from the current channel region, the current channel region has a shortest distance s2 from the contact layer, and the distance D1 is greater than the distance s 2.

According to an embodiment, a current channel region is defined at a position on the light emitting surface corresponding to the contact structure, and the current channel region is located between any two adjacent second extension portions and the first extension portion; wherein the contact layer has an end portion, a shortest distance s1 is provided between the end portion and the current path region, a shortest distance s2 is provided between the current path region and the contact layer, and a range of s1/s2 is greater than 0 and less than 5.

According to an embodiment, the contact structure comprises a group III-V semiconductor material.

According to an embodiment, a current channel region is defined at a position on the light emitting surface corresponding to the contact structure, and the current channel region is located between any two adjacent second extension portions and the first extension portion; wherein, in the direction perpendicular to the light emitting laminated layer, a distance H1 exists between the contact layer and the contact structure, a shortest distance s2 exists between the current channel region and the contact layer, and the distance s2 is greater than the distance H1.

According to an embodiment, the contact layer does not overlap with the first extension portion and the electrode portion in a direction perpendicular to the light emitting laminated layer.

According to an embodiment, the width of the second extension is gradual.

According to an embodiment, the first extension portion is substantially perpendicular to the plurality of second extension portions.

According to an embodiment, the second width is larger than the third width.

According to an embodiment, the light emitting device further includes a reflective layer between the substrate and the light emitting stack.

According to an embodiment, the light emitting device further includes an insulating layer on the reflective layer and including a plurality of holes.

According to an embodiment, the thickness of the contact structure is greater than the thickness of the insulating layer.

According to an embodiment, the light emitting device further includes a second window layer located between the light emitting stack and the contact structure, and a thickness of the first window layer is greater than a thickness of the second window layer.

According to an embodiment, the light emitting device further includes a passivation layer covering the roughened surface.

According to one embodiment, another of the plurality of second extension portions is connected to both the first electrode portion and the second electrode portion.

According to an embodiment, the contact layer has a first portion and a second portion, and the first portion is disposed under the second extending portion.

According to an embodiment, the second portion vertically overlaps a portion of the first extension.

According to an embodiment, the contact layer is spaced apart from the first extension.

According to an embodiment, the contact layer has a side surface and an upper surface, and the plurality of second extending portions cover the side surface and the upper surface.

According to an embodiment, in the top view, the current channel region comprises a plurality of regions in a point-like array.

According to an embodiment, the light emitting element has a first side, a second side, a third side and a fourth side surrounding the light emitting surface, the first electrode portion is closest to the first side, the second electrode portion is closest to the second side, and each of the second extending portions is substantially parallel to the third side or the fourth side.

The utility model also provides a packaging structure, this packaging structure contains: a carrier; the light-emitting element is positioned on the carrier; and a packaging material layer covering the light-emitting element.

The utility model also provides a photoelectric system, this photoelectric system contains: a base plate; the light-emitting element is positioned on the bottom plate; and a control module.

The utility model has the advantages of, through above-mentioned light emitting component's design, be favorable to the improvement of the luminous homogeneity of component, and improve luminous efficiency. For example, by the design of the light emitting device, the current density introduced from the electrode portion is relatively high, the first extending portion with a relatively large width can efficiently spread the current to the third side and the fourth side, and then the current is spread to the first side and the second side by the plurality of second extending portions, so that the current can be uniformly spread on the light emitting surface, which is beneficial to improving the light emitting uniformity of the device and improving the light emitting efficiency. The utility model discloses a light-emitting component or packaging structure can be applied to the product in fields such as illumination, medical treatment, demonstration, communication, sensing, electrical power generating system, for example lamps and lanterns, monitor, cell-phone, panel computer, automobile-used instrument board, TV, computer, wearing equipment (like wrist-watch, bracelet, necklace etc.), traffic sign, outdoor display, medical equipment etc..

In addition, the present invention further provides a light emitting device including a substrate, a light emitting stack, an upper electrode, a contact structure and a contact layer. The light-emitting lamination is positioned on the substrate and is provided with a light-emitting surface. The light emitting stack comprises a plurality of semiconductor layers. The upper electrode is positioned on the light-emitting surface and comprises an electrode part, a first extension part and a plurality of second extension parts. The electrode portion has a first electrode portion and a second electrode portion with a first width. The first electrode portion and the second electrode portion do not overlap in the horizontal direction. The first extension portion is electrically connected with the electrode portion and has a second width. The plurality of second extending parts are connected with the first extending parts and have a third width. The second width is between the first width and the third width. The contact structure is located between the light-emitting laminated layer and the substrate and does not overlap with the upper electrode in a direction perpendicular to the light-emitting laminated layer. The contact layer is located between the upper electrode and the light emitting laminated layer.

According to an embodiment, the first width is larger than the third width.

According to an embodiment, the light emitting device further includes a window layer between the light emitting stack and the contact layer. One surface of the window layer is a roughened surface.

According to an embodiment, the light emitting device further includes a current channel region between any two adjacent second extension portions and the first extension portion.

According to an embodiment, the first extension portion has a shortest distance D1 from the current channel region, the current channel region has a shortest distance s2 from the contact layer, and the distance D1 is greater than the distance s 2.

According to one embodiment, the contact layer has an end portion, the end portion has a shortest distance s1 from the current path region, the current path region has a shortest distance s2 from the contact layer, and the range of s1/s2 is greater than 0 and less than 5.

According to an embodiment, in a direction perpendicular to the light emitting stack, there is a distance H1 between the contact layer and the contact structure, there is a shortest distance s2 between the current channel region and the contact layer, and the distance s2 is greater than the distance H1.

According to an embodiment, the contact layer does not overlap the first extension portion and the electrode portion in a direction perpendicular to the light emitting laminated layer.

The utility model also provides a packaging structure contains: a carrier; the light-emitting element is positioned on the carrier; and a packaging material layer covering the light-emitting element.

The utility model also provides a photoelectric system contains: a base plate; the light-emitting element is positioned on the bottom plate; and a control module.

Drawings

FIG. 1A is a top view of a light emitting device according to an embodiment;

FIG. 1B is an enlarged view of the light emitting device of FIG. 1A;

FIGS. 1C-1H are top views of current paths;

FIG. 2 is a cross-sectional view of the light emitting device of FIG. 1B taken along line A-A';

FIG. 3 is a schematic diagram illustrating internal current distribution of a light emitting device;

FIG. 4 is a top view of a light emitting device according to one embodiment;

FIG. 5A is a top view of a light emitting device according to another embodiment;

FIG. 5B is an enlarged view of the light emitting device of FIG. 5A;

FIG. 6A is a top view of a light emitting device according to an embodiment;

FIG. 6B is a partial enlarged view of the light emitting device shown in FIG. 5A;

FIG. 7 is a top view of a light emitting device according to one embodiment;

FIG. 8 is a top view of a light emitting device according to one embodiment;

FIG. 9A is a top view of a light emitting device according to one embodiment;

FIG. 9B is a partial enlarged view of the light emitting device in FIG. 9A;

FIG. 9C is a cross-sectional view of one embodiment of the light emitting device taken along line B-B' of FIG. 9B;

FIG. 9D is a cross-sectional view of one embodiment of the light emitting device taken along line C-C' of FIG. 9B;

FIG. 9E is a partial enlarged view of a light emitting device according to another embodiment;

FIG. 9F is a partial enlarged view of a light emitting device according to another embodiment;

FIG. 9G is a top view of a light emitting device according to another embodiment;

FIG. 10 is a schematic view of a package structure of a semiconductor device;

FIG. 11 is a schematic view of an optoelectronic system.

Description of the symbols

Detailed Description

Embodiments of the invention will be described in detail, and illustrated in the accompanying drawings, wherein like or similar elements are numbered alike in the various figures and description.

Fig. 1A is a top view of a light emitting device 100 according to an embodiment, fig. 1B is an enlarged view of a region I in fig. 1A, and fig. 2 is a cross-sectional view of the light emitting device 100 along a line a-a' in fig. 1B. In fig. 1A, the area 140 c' represents the corresponding position of the current channel 140c, and the following paragraphs may be referred to for the related description.

As shown in fig. 1A, the light emitting element 100 includes a light emitting surface 1S and a plurality of sidewalls, wherein the plurality of sidewalls include a first side 1031, a second side 1032 opposite to the first side 1031, a third side 1033 between the first side 1031 and the second side 1032, and a fourth side 1034 opposite to the third side 1033 between the first side 1031 and the second side 1032. The first side 1031, the second side 1032, the third side 1033, and the fourth side 1034 surround the light emitting surface 1S, and the first side 1031, the second side 1032, the third side 1033, and the fourth side 1034 have a side length L respectively₁Length of side L₂Length of side L₃And an edgeLong L₄. In the present embodiment, the light emitting device 100 includes an upper electrode on the light emitting surface 1S. The upper electrode includes two electrode portions 171 and an extension electrode 13. The material of the electrode portion 171 and the extension electrode 13 may include a single layer or multiple layers (not shown) of metal or alloy. Metals such as aluminum (Al), chromium (Cr), copper (Cu), tin (Sn), gold (Au), nickel (Ni), titanium (Ti), platinum (Pt), lead (Pb), zinc (Zn), cadmium (Cd), antimony (Sb), cobalt (Co), germanium (Ge), palladium (Pd). The alloy is an alloy containing the above-mentioned metals. The electrode portion 171 is for introducing an external current, and the plurality of extension electrodes 13 are connected to the electrode portion 171 for distributing the current to an area other than the electrode portion 171. The two electrode portions 171 are close to the first side 1031, and the extension electrode 13 includes a first extension portion 131 and a plurality of second extension portions 132. The first extension 131 is closer to the first side 1031 and substantially parallel to the first side 1031 than to the second side 1032. In addition, the first extending portion 131 has a first region connecting the two electrode portions 171 and two second regions extending from the two electrode portions 171 to the third side 1033 and the fourth side 1034, respectively. The second extending portions 132 are connected to the two electrode portions 171 and the first extending portions 131 and extend toward the first side 1031 and the second side 1032.

As shown in fig. 1B, in the present embodiment, the first extending portion 131 and the second extending portion 132 are substantially vertically disposed, and the first extending portion 131 has a width W₁The second extension portion has a width W₂Width W₁Is a width W₂1.5-3 times of the total weight of the powder. The electrode portion 171 has a large width W due to a large current density introduced at the beginning₁The first extending portions 131 can effectively spread the current toward the third and

fourth sides

1033 and 1034, and then the second extending portions 132 can spread the current toward the first and

second sides

1031 and 1032, so that the current can be uniformly spread on the light emitting surface 1S.

Next, referring to the cross-sectional view of the light emitting device 100 shown in fig. 2, the light emitting device 100 includes a substrate 103, a back electrode 172 located below the substrate 103, a conductive adhesive layer 160 located on the substrate 103, a reflective layer 150 located on the conductive adhesive layer 160, a current spreading layer 170 located on the reflective layer 150, an insulating layer 145 located on the reflective layer 150, a first contact layer 140 located between the insulating layer 145 and the current spreading layer 170, a first window layer 111 located on the insulating layer 145, a light emitting stack layer 120 located on the first window layer 111, a second window layer 112 located on the light emitting stack layer 120, a protective layer 180 located on the second window layer 112, a second contact layer 190 located on the second window layer 112, and a second extension portion 132 located on the second contact layer 190.

In the present embodiment, the light emitting stack 120 includes a first semiconductor layer 121, an active layer 122 on the first semiconductor layer 121, a second semiconductor layer 123 on the active layer 122, and the first semiconductor layer 121 and the second semiconductor layer 123 include dopants to increase conductivity and have different conductivity types for respectively providing recombination (recombination) of electrons and holes in the active layer 122 to emit light. When the first semiconductor layer 121 includes a p-type group III-V semiconductor material, the second semiconductor layer 123 includes an n-type group III-V semiconductor material; when the second semiconductor layer 123 includes a p-type group III-V semiconductor material, the first semiconductor layer 121 includes an n-type group III-V semiconductor material. The first semiconductor layer 121 or the second semiconductor layer 123 has a dopant of zinc (Zn), carbon (C), or magnesium (Mg) to form a p-type group III-V semiconductor material. The first semiconductor layer 121 or the second semiconductor layer 123 has a dopant of silicon (Si) or tellurium (Te) to form an n-type group III-V semiconductor material. The doping concentration of the dopant is between 5 x 10¹⁶cm^-3To 5X 10¹⁹cm^-3In the meantime. The active layer 122 includes a plurality of well layers (wells) and barrier layers (barriers) alternately stacked with each other, the well layers and the barrier layers including III-V semiconductor materials. Depending on the material composition of the well layer, the active layer 122 may emit infrared light with a peak wavelength (peak wavelength) between 700nm and 1700nm, red light with a peak wavelength between 610nm and 700nm, yellow light with a peak wavelength between 530nm and 570nm, green light with a peak wavelength between 490nm and 550nm, blue light or deep blue light with a peak wavelength between 400nm and 490nm, or ultraviolet light with a peak wavelength between 250nm and 400 nm.

The material of the first window layer 111 includes at least one element selected from the group consisting of aluminum (Al), gallium (Ga), indium (In), arsenic (As), phosphorus (P) and nitrogen (N), such As a semiconductor compound of GaN, AlGaInP, AlInP, AlGaAs, GaP, etc. The first window layer 111 and the first semiconductor layer 121 include dopants and have the same conductivity type, e.g., p-type conductivity type. The doping concentration of the first window layer 111 is greater than that of the first semiconductor layer 121, and thus the first window layer 111 has a higher conductivity. The thickness of the first window layer 111 is 0.5 μm to 10 μm to provide a lateral current spreading function, prevent the current from being localized in a local area of the light emitting device 100, and assist light to be emitted from the sidewalls of the light emitting device 100.

The material of the second window layer 112 includes at least one element selected from the group consisting of aluminum (Al), gallium (Ga), indium (In), arsenic (As), phosphorus (P) and nitrogen (N), such As a semiconductor compound of GaN, AlGaInP, AlInP, AlGaAs, GaP, etc. The second window layer 112 includes at least one material different from the second semiconductor layer 123. Preferably, the second window layer 112 includes a dopant and has the same conductivity type as the second semiconductor layer 123, such as an n-type conductivity type. The light emitting surface 1S of the light emitting device 100 is a surface of the second window layer 112 and may be a roughened surface to reduce total reflection, thereby improving the light emitting efficiency of the light emitting device 100. The passivation layer 180 conformally covers the roughened surface of the second window layer 112. In some embodiments, the material of the protective layer 180 comprises a nitride or oxide of silicon (Si), such as SiO₂、 SiN_x. In the embodiment, the thickness of the second window layer 112 is greater than the thickness of the first window layer 111, and the thickness of the second window layer 112 is between 1 μm and 20 μm, so as to provide a function of lateral current diffusion and improve the light-emitting efficiency of the light-emitting device 100.

Referring to fig. 1A to 1H and fig. 2, the second contact layer 190 is located between the second window layer 112 and the extension electrode 13, and the contact resistance between the second contact layer 190 and the extension electrode 13 is less than 10^-2 W-cm²Preferably less than 10^-4W-cm²For conducting current from the extension electrode 13 to the second window layer 112. In the present embodiment, the second contact layer 190 is only under the extension electrode 13 and is not formed under the electrode portion 171. The second contact layer 190 and the extension electrode 13 have the same structure from the top viewThe pattern of (2). The material of the second contact layer 190 comprises a group III-V semiconductor material, such as GaAs, AlGaAs, or InGaP. The second contact layer 190 includes a dopant and has the same conductivity type as the second window layer 112, such as an n-type conductivity type. The second contact layer 190 has a doping concentration greater than 10¹⁸/cm³Preferably between 10¹⁹/cm³～5×10²⁰/cm³In the meantime.

The substrate 103 includes a metal, such as molybdenum, or a semiconductor material, such as germanium and silicon. The back electrode 172 is connected to the substrate 103 and is used to introduce current into the light emitting device 100. The back electrode 172 comprises a single layer or multiple layers (not shown) of metal or alloy. Metals such as aluminum (Al), chromium (Cr), copper (Cu), tin (Sn), gold (Au), nickel (Ni), titanium (Ti), platinum (Pt), lead (Pb), zinc (Zn), cadmium (Cd), antimony (Sb), cobalt (Co), germanium (Ge), palladium (Pd). The alloy is an alloy containing the above-mentioned metals. The conductive adhesive layer 160 is used to adhere the reflective layer 150 and the substrate 103 and provide a good conductive path, and the material of the conductive adhesive layer 160 includes gold, tin, lead, indium or an alloy thereof.

The material of the reflective layer 150 includes a metal element having a reflectivity of more than 90% with respect to light having a peak wavelength (Wp) between 600 nm and 2000nm, such as silver or gold, for reflecting light emitted from the light emitting stack 120. The current spreading layer 170 is electrically connected to the reflective layer 150. The current spreading layer 170 includes a metal oxide, such as Indium Tin Oxide (ITO), indium oxide (InO), tin oxide (SnO), Cadmium Tin Oxide (CTO), Antimony Tin Oxide (ATO), Aluminum Zinc Oxide (AZO), Zinc Tin Oxide (ZTO), Gallium Zinc Oxide (GZO), zinc oxide (ZnO), Indium Zinc Oxide (IZO), or indium tungsten oxide (IWO). In this embodiment, the current spreading layer 170 is Indium Zinc Oxide (IZO). The material of the insulating layer 145 includes an insulating material such as silicon nitride (SiNx), aluminum oxide (AlOx), silicon oxide (SiOx), or magnesium fluoride (MgFx). The insulating layer 145 has a refractive index at least 1 or more less than that of the first window layer 111, thereby increasing the percentage of light reflection emitted from the light emitting stack 120.

As shown in fig. 2, the insulating layer 145 includes a first window layer 111 with a plurality of holes 140e exposed, and the first contact layer 140 covers the other side of the insulating layer 145 opposite to the first window layer 111 in a conformal manner, fills the plurality of holes 140e and is electrically connected to the portion of the first window layer 111 exposed in the holes 140e to form a plurality of current channels 140c for passing current. The material of the first contact layer 140 is selected from metal oxide materials, such as Indium Tin Oxide (ITO), indium oxide (InO), tin oxide (SnO), Cadmium Tin Oxide (CTO), Antimony Tin Oxide (ATO), Aluminum Zinc Oxide (AZO), Zinc Tin Oxide (ZTO), Gallium Zinc Oxide (GZO), zinc oxide (ZnO), Indium Zinc Oxide (IZO), or indium tungsten oxide (IWO). In the present embodiment, the material of the first contact layer 140 is selected from Indium Tin Oxide (ITO) capable of forming a low contact resistance with the first window layer 111.

In the present embodiment, the thickness of the insulating layer 145 is between

Preferably between

To (c) to (d); the first contact layer 140 has a thickness between

To (c) to (d); the thickness of the current spreading layer 170 is between

Preferably between

In the meantime. The insulating layer 145, the first contact layer 140, the current spreading layer 170, and the reflective layer 150 form an omni-directional reflector (ODR), which can improve the reflectivity of light emitted to the ODR to over 95%.

A portion of the first contact layer 140 directly contacting the first window layer 111 forms a current path 140 c. The current path 140c has a width W₃Is between 1 μm and 100 μm, preferably between 5 μm and 30 μm. In the cross-sectional view of FIG. 2, the current path 140c is in a direction (X) perpendicular to the light emitting stack 120 and extends the electrode13 and the electrode portion 171 do not overlap. In addition, the relative position of the current channel 140c corresponding to the light emitting surface 1S is defined as a region 140c ', and thus, the regions 140 c' are shown in fig. 1A and are staggered with each other (i.e. not overlapped in the X direction). Further, the region 140c 'is also offset from the extension electrode 13 and the electrode portion 171, that is, the region 140 c' does not overlap with the extension electrode 13 and the electrode portion 171 in the X direction (see fig. 2). The plurality of regions 140 c' may be in a dot-like array in the top view. In the present embodiment, the top view of each current channel 140c is a circle, and therefore, the area 140 c' is also a circle. In other embodiments, as shown in fig. 1C-1F, the top view of the current path 140C (or the area 140C') includes, but is not limited to, a rectangle, a triangle, a diamond, or a combination thereof.

As shown in fig. 1A, a current channel region 140b is disposed between any two adjacent second extension portions 132 and first extension portions 131, the current channel region 140b is defined by a common tangent of a plurality of regions 140c 'nearest to the extension electrode 13, and the region 140 c' is not disposed between the current channel region 140b and the extension electrode 13. In other words, between two adjacent second extension portions 132 and first extension portions 131, the current channel region 140b is a polygon surrounding all the regions 140c ', and each side of the current channel region 140b is tangent to at least two regions 140 c'. In FIG. 1A, the current channel region 140b is a quadrilateral (e.g., a rectangle) and only one is shown as an example, the light emitting device may include a plurality of current channel regions.

As shown in fig. 1C to fig. 1G, when the region 140C 'has other shapes, the current channel region 140b is defined by a plurality of vertexes (as shown in fig. 1D or fig. 1F), sides (as shown in fig. 1C or fig. 1E) or at least two of the vertexes (as shown in fig. 1G) of the region 140C' closest to the extended electrode 13. In FIG. 1C or FIG. 1E, the region 140C' is square, and the current channel region 140b is a quadrilateral; in fig. 1D or fig. 1F, the area 140 c' is a triangle and a diamond, respectively, and the current channel area 140b is a quadrilateral; in fig. 1G, the region 140 c' includes at least two different shapes, and the current channel region 140b is a quadrilateral. As shown in fig. 1B and 1H, the current path regions 140B have the same shape, and are all hexagonal. In fig. 1B, in addition to the region 140c ' defining the current channel region 140B, other regions 140c ' are surrounded therein, i.e., some regions 140c ' are not used to define the current channel region 140B. In fig. 1H, the current channel region 140b is defined by all of the regions 140 c'.

As shown in FIG. 1B, there is a shortest distance D between the current channel region 140B and the first extension 131₁And a shortest distance D from the second extension 132₂Distance D₁Greater than the distance D₂. Due to the width W of the first extension 131₁Is the width W of the second extension portion 132₂1.5-3 times, the first extension portion 131 is directly connected to the electrode portion 171, and the second extension portion 132 is further directly connected to the first extension portion 131, so that when the light emitting device 100 is under normal operation, the current flowing through the first extension portion 131 is greater than the current flowing through the second extension portion 132, as shown in fig. 3. Fig. 3 is a schematic diagram of the internal current distribution of the light emitting device 100. The direction of the current 9 is only illustrated in the figure, and the direction of the current 9 can be reversed according to the electrical design of the light emitting stack 120. The current 9 flows through the first window layer 111, the light emitting stack 120 and the second window layer 112 between the current channel 140c and the first extension 131 and the second extension 132. Since the current flowing through the first extension portion 131 is greater than the current flowing through the second extension portion 132, when the current 9 flows through the current channel 140C and the region between the first extension portion 131 and the second extension portion 132, more part of the current 9 flows through the region C between the current channel 140C and the first extension portion 131₂A smaller portion of the current 9 flows through the region C between the current channel 140C and the second extension 132₁To the second extension 132. In addition, the distance between the current path region 140b and the first extension 131 is designed to be larger than the distance (D) between the current path region and the second extension 132₁>D₂) Thus in region C₂The current in the region C is relatively dispersed₁The current in (1) is more concentrated; due to the presence of the region C₂More but more dispersed current in region C₁Is less but more concentrated so that it passes through region C₁The current density of the active layer 122 in (a) approaches the passing region C₂Active ofThe current density of layer 122 achieves the purpose of uniformly dispersing the current.

In this embodiment, the width W of the first extension 131₁3 μm to 50 μm, preferably 10 μm to 20 μm, and the width W2 of the second extension 132 is 2 μm to 33 μm, preferably 5 μm to 10 μm; distance D₁And width W₁Having a ratio R1(═ D)₁/W₁) Distance D₂And width W₂Having a ratio R2(═ D)₂/W₂) R1 and R2 are in the ranges of 2. ltoreq.R 1. ltoreq.3.5 and 2. ltoreq.R 2. ltoreq.3.5, respectively, so that the distance D₁Preferably in the range of 20 to 70 μm, and a distance D₂The preferable range is 10 μm to 35 μm. When the width of the first extension 131 is gradually changed, the maximum width is defined as W₁And the above-mentioned ratio R1 is calculated.

Fig. 4 is a top view of a light emitting device 200 according to another embodiment, wherein the light emitting device 200 is similar to the light emitting device 100, and reference is made to the above description for the same or similar structure, which will not be repeated herein. The difference between the light emitting device 200 and the light emitting device 100 is that the distribution of the region 140 c' in the current channel region 140b is different, i.e. the distribution of the current channels 140c of the light emitting device 200 is different from that of the current channels 140c of the light emitting device 100. In the light emitting element 200, the density of the current path region 140b increases from the first side 1031 to the second side 1032. In detail, the current path region 140b of the light emitting device 200 includes a first region b1 and a second region b2, the first region b1 is closer to the electrode portion 171 than the second region b2, and the number of regions 140c 'per unit area in the first region b1 is smaller than the number of regions 140 c' per unit area in the second region b 2. In other words, the density (number/area) of the region 140c 'in the first region b1 is less than the density of the region 140 c' in the second region b2, i.e. the density of the current path 140c in the first region b1 is less than the density of the current path 140c in the second region b2, so that the total contact area of the first contact layer 140 in the first region b1 and the first window layer 111 is less than the total contact area of the first contact layer 140 in the second region b2 and the first window layer 111, so that the total contact resistance of the current passing through the first contact layer 140 in the second region b2 and the first window layer 111 is less than the total contact resistance of the current passing through the first contact layer 140 in the first region b1 and the first window layer 111, i.e. the current is easier to pass through the first contact layer 140 in the second region b2 and the first window layer 111, thereby driving the current to flow through the current path 140c in the second region b2 in the first region b1, so that the current spreading in the light emitting element 200 is more uniform.

Fig. 5A is a top view of a light emitting device 300 according to another embodiment, and fig. 5B is an enlarged view of a region II in fig. 5A. The light emitting device 300 is similar to the light emitting device 100, and the same or similar structure can be referred to the above description, which will not be repeated herein. The difference between the light emitting device 300 and the light emitting device 100 is that the shortest distance between the current channel region 140b and the first extension 131 is different, i.e. the shortest distance between the current channel 140c and the first extension 131 in the light emitting device 300 is different from the shortest distance between the current channel 140c and the first extension 131 in the light emitting device 100. Details are as follows. As shown in fig. 5B, the light emitting device 300 includes a plurality of current channel regions 140B1, 140B2, 140B 3. The shortest distances between the current path region 140b1, the current path region 140b2, and the current path region 140b3 and the

line segment

1311, 1312, and 1313 of the first extension portion 131 are respectively a distance D₃A distance D₄And a distance D₅Distance D₃Greater than the distance D₄Distance D₄Greater than the distance D₅. In the present embodiment, the line segment 1311 is closest to the electrode portion 171, the line segment 1312 times, and the line segment 1313 is farthest from the electrode portion 171. In the first extension 131, the current density becomes higher as the distance from the electrode portion 171 becomes higher, and the current density becomes lower as the distance from the electrode portion 171 becomes higher, so that the current density of the line segment 1311 becomes highest, and the line segment 1313 becomes lowest after the line segment 1312. Similar to FIG. 3, by distance D₃Greater than the distance D₄Distance D₄Greater than the distance D₅The design of (3) can make the current density between the line segment 1311 and the current channel region 140b1, between the line segment 1312 and the current channel region 140b2, and between the line segment 1313 and the current channel 140b3 close, so as to achieve the purpose of uniformly dispersing the current. Distance D₃The preferred range is between80-130 μm, distance D₄The preferable range is between 50 μm and 100 μm, and the distance D₅The preferable range is 20 μm to 70 μm.

Fig. 6A is a top view of a light emitting device 400 according to another embodiment, and fig. 6B is an enlarged view of a region III in fig. 6A. The light emitting device 400 is similar to the light emitting device 200, and the same or similar structure can be referred to the above description, which will not be repeated herein. The difference between the light emitting device 400 and the light emitting device 200 is that the distribution of the region 140 c' in the current channel region 140b is different, i.e. the distribution of the current channels 140c of the light emitting device 400 is different from that of the current channels 140c of the light emitting device 200. In addition, the current channel region 140b is non-rectangular and is hexagonal. In detail, the current path region 140b of the light emitting device 400 includes a second region b2 and a third region b3, the second region b2 can refer to the description of the previous paragraphs, and the third region b3 is described as follows.

As shown in fig. 6B, the third region B3 is in the shape of an isosceles trapezoid having an upper bottom B61, a lower bottom B62, and two waists B6' and B6 ″ having the same length connecting the upper bottom B61 and the lower bottom B62. The end point P of the isosceles trapezoid nearest to the first extension 131₁₁、P₁₂A distance D is formed between the adjacent second extension portion 132₆(ii) a End point P of isosceles trapezoid farthest from the first extension 131₂₁、P₂₂A distance D is formed between the adjacent second extension portions 132₇Distance D₆Greater than the distance D₇. The distance between the region 140 c' and the nearest second extension 132 is gradually decreased from the lower bottom b62 to the upper bottom b 61. In detail, the distance between the waist portion b 6' or the waist portion b6 ″ and the second extension portion 132 is from the distance D from the position adjacent to the lower bottom b62 to the position adjacent to the upper bottom b61₆Decrease gradually to a distance D₇. Distance D₇The preferable range is between 10 mu m and 35 mu m, and the distance D₆The preferable range is 35 μm to 100 μm. The current density of the portion of the second extension portion 132 closer to the first extension portion 131 is higher, that is, the current density of the second extension portion 132 near the bottom b62 is higher than that near the top b 61. Similar to FIG. 3, by distance D₆Decrease gradually to a distance D₇May be such thatFrom end point P in region b3₁₁To endpoint P₂₁Current density near to, or from, the end point P of the adjacent (closest) second extension 132₁₂To endpoint P₂₂The current density between the adjacent second extension portions 132 is close to that between the adjacent second extension portions, so as to achieve the purpose of uniformly dispersing the current.

Fig. 7 shows a top view of a light emitting device 500 according to another embodiment. The light emitting device 500 is similar to the light emitting device 200, and the same or similar structure can be referred to the above description, which will not be repeated herein. The light emitting device 500 is different from the light emitting device 200 in that the width of the second extension portion 132 is gradually changed. In detail, the second extending portion 132 has a first end 132' near the first side 1031 and a second end 132 ″ near the second side 1032. The first end 132 'is closer to the first extension 131 than the second end 132 ", and the width of the second extension 132 decreases from the first end 132' to the second end 132". The second end 132 ″ is the end of the second extension portion 132, and the current gradually decreases as the current spreads from the first end 132 'to the second end 132 ″, so the current near the second end 132 ″ does not need to flow through the same width electrode as the current near the first end 132', and the same current density can be maintained without current concentration, and in addition, as mentioned above, since the density of the second region b2 is greater than that of the first region b1, the current is driven to flow to the second region b2, and the current is further uniformly dispersed.

In another embodiment, the width of the second extension portion 132 of the light emitting device 500 is gradually increased from the first end 132 'to the second end 132 "(not shown), so that the current on the second extension portion 132 is more easily diffused from the first end 132' to the second end 132", thereby achieving the purpose of uniformly dispersing the current.

Fig. 8 shows a top view of a light emitting device 600 according to another embodiment. The light emitting device 600 is similar to the light emitting device 200, and the same or similar structure can be referred to the above description, which will not be repeated herein. The light emitting device 600 includes a first region b1 and a fourth region b 4. The first region b1 can refer to the description of the previous paragraph. The first region b1 differs from the fourth region b4 in the area of the region 140c '(140 c "), and the area of each region 140c ″ in the fourth region b4 is larger than that of each region 140 c' in the first region b1 to increase the uniformity of current spreading. In detail, under the same condition that the area of the region 140c "is larger than the area 140c ' (i.e. the distance between the regions 140c ' is larger than the distance between the regions 140 c") under the same area and the same number of the regions (140c ', 140c ") in the first region b1 and the fourth region b4, the total area of the contact between the first contact layer 140 and the first window layer 111 in the fourth region b4 is larger than the total area of the contact between the first contact layer 140 and the first window layer 111 in the lower portion of the first region b1, so that the total contact resistance of the corresponding lower current passing through the interface between the first contact layer 140 and the first window layer 111 in the fourth region b4 is smaller than the total contact resistance passing through the interface between the first contact layer 140 and the first window layer 111 in the first region b1 in the fourth region b4 and the first region b1, thereby driving the current originally passing through the current path 140c in the first region b1 to flow into the fourth region 4, to make the current spreading in the light emitting element 600 more uniform.

In another embodiment, the difference between the light emitting device (not shown) and the

light emitting devices

100, 200, 300, 400, 500, and 600 is the width W of the first extension 131 connecting the two electrode portions 171₁(refer to fig. 1B) is gradation. In detail, the width W of the first extension portion 131₁The distance from the electrode portion 171 decreases toward the third side 1033 or the fourth side 1034. In another embodiment, the width W of the first extension 131₁Increasing in a direction from the electrode portion 171 toward the third 1033 or fourth 1034 side.

Fig. 9A is a top view of a light emitting device 700 according to another embodiment, and fig. 9B is a partially enlarged view of a region IV of the light emitting device 700 in fig. 9A. The light emitting device 700 is similar to the light emitting device 100 and the same or similar structure thereof can be referred to the above description, and will not be described again.

In the present embodiment, the upper electrode includes an electrode portion 171 and an extension electrode 13. The electrode portion 171 includes a first electrode portion 171a and a second electrode portion 171 b. Of the sidewalls of the light emitting element 700, the first electrode portion 171a is closest to the first side 1031, and the second electrode portion 171b is closest to the second side 1032. The extension electrode 13 may include two

first extension portions

131a and 131b and a plurality of second extension portions 132. In the present embodiment, the first extension portion 131a extends along the first side 1031 and is connected to the electrode portion 171a, and the first extension portion 131b extends along the second side 1032 and is connected to the electrode portion 171 b. Each of the second extending portions 132 may be connected to the first extending portion 131a and the first extending portion 131b, or connected to the first electrode portion 171a and the second electrode portion 171 b. Each second extension 132 may be substantially parallel to the third side 1033 or the fourth side 1034.

As shown in fig. 9A and 9B, the first electrode portion 171a and the second electrode portion 171B have a width W₀The first extending portion 131a and the first extending portion 131b have a width W₁The second extension portion 132 has a width W₂. In the present embodiment, the width W₁Between width W₀And width W₂And width W of₁Is greater than width W₂。

As shown in fig. 9A to 9C, the second contact layer 190 preferably does not overlap the current channel region 140b in the direction (X) perpendicular to the light emitting stack 120. As shown in the top view of fig. 9B, the second contact layer 190 may have an end portion 190 e. In the present embodiment, the end portion 190e is a junction of the second contact layer 190 and the first extension portion 131. The end portion 190e has a shortest distance s1 from the current path region 140b, and the current path region 140b has a shortest distance s2 from the second contact layer 190. In one embodiment, s1/s2 may range from greater than 0 to less than 5, preferably greater than 1 to less than 3. The first extending portion 131 and the current path region 140b have a shortest distance D1, preferably the distance D1 is greater than the distance s 2. In the present embodiment, the second contact layer 190 may have a width W₄And preferably a width W₄Is smaller than the width W of the second extension part 132₂。

Fig. 9C is a sectional view taken along line B-B 'of fig. 9B, and fig. 9D is a sectional view taken along line C-C' of fig. 9B. As shown in fig. 9C, the second extension portion 132 may cover the side surface 190a and the upper surface 190s of the second contact layer 190, so that the second contact layer 190 is covered by the second extension portion 132 and is not exposed.

As shown in fig. 9C and 9D, the light emitting device 700 does not have the first window layer 111. In the present embodiment, the insulating layer 145 is adjacent to the first semiconductor layer 121, and further includes a contact structure 130 under the first semiconductor layer 121. As shown in fig. 9C, the contact structure 130 may be adjacent to the first semiconductor layer 121 and located in the plurality of holes 140e of the insulating layer 145. The material of the contact structure 130 comprises a III-V semiconductor material. In one embodiment, the III-V semiconductor material may be a binary III-V semiconductor material, such as GaAs or GaP. The contact structure 130 includes a dopant, such as zinc (Zn), carbon (C), or magnesium (Mg), and may have the same conductivity type as the first semiconductor layer 121, such as p-type. In one embodiment, the thickness of the contact structure 130 is greater than the thickness of the insulating layer 145. As shown in fig. 9C, the first contact layer 140 covers the sidewall of the insulating layer 145 and the contact structure 130 exposed from the hole 140 e. In the present embodiment, a plurality of current paths 140c are formed to pass current by providing the contact structure 130. As shown in fig. 9C, the second contact layer 190 has a distance H1 between it and the contact structure 130 in the vertical direction (X direction). In one embodiment, distance s2 is greater than distance H1, and preferably distance s2 is greater than 2 times distance H1 (s2>2H 1).

In the present embodiment, the second contact layer 190 is only located under the second extension portion 132. As shown in fig. 9B and 9D, the second contact layer 190 does not overlap the electrode portion 171 and the first extension portion 131 in the vertical direction (X direction). Since the second contact layer 190 is only located under the second extension portion 132, the chance that light generated by the active layer 122 is absorbed by the first extension portion 131 can be reduced, and the light emitting efficiency can be improved.

Fig. 9E and 9F are enlarged views of light-emitting devices according to other embodiments. In one embodiment, the second contact layer 190 may be located only under a portion of the second extension 132 without being connected to the first extension 131. As shown in fig. 9E, the end 190E of the second contact layer 190 and the first extension 131 have a distance s3 therebetween. The distance s3 may be in the range of 10 μm to 50 μm, for example about 20 μm, 25 μm, 30 μm, 35 μm or 40 μm. In some embodiments, by spacing the second contact layer 190 and the first extension portion 131 by a distance, the chance that light generated by the active layer 122 is absorbed by the first extension portion 131 can be further reduced, so as to improve the light emitting efficiency of the light emitting device.

In another embodiment, the second contact layer 190 may be extended and disposed under a portion of the first extension 131. As shown in fig. 9F, the second contact layer 190 may have a first portion 190a and a second portion 190b, the first portion 190a is disposed under the second extension portion 132, and the second portion 190b is disposed under the edge of the first extension portion 131 near the current channel region 140 b. The second portion 190b may be connected with the first portion 190 a. In the vertical direction (X direction), the second portion 190b substantially overlaps the first extension 131. In detail, a side of the second portion 190b and a side of the first extension 131 close to the current channel region 140b in the vertical direction (X direction) may substantially overlap. In the top view, the area of the second portion 190b is preferably less than 1/2 of the area of the first extension 131, and more preferably less than 1/3. The second portion 190b preferably does not overlap with the electrode portion 171 in the vertical direction (X direction). By extending the second contact layer 190 under a portion of the first extension portion 131, the contact resistance between the first extension portion 131 and the second window layer 112 (see fig. 9D) below is improved, and the forward voltage of the light emitting device can be further reduced.

Fig. 9G shows a top view of the light emitting device 800 according to another embodiment. The main difference between the light emitting device 800 and the light emitting device 700 is the arrangement of the electrode portion 171, and other similar or identical structures can be referred to above, and will not be described again. As shown in fig. 9G, in the present embodiment, the first electrode portion 171a and the second electrode portion 171b of the electrode portion 171 do not overlap in the horizontal direction (Y direction). In addition, in the present embodiment, the first electrode portion 171a and the second electrode portion 171b are respectively connected to different second extending portions 132, but the present invention is not limited thereto. In another embodiment, the first electrode portion 171a and the second electrode portion 171b may be connected to the same second extending portion 132 without overlapping in the horizontal direction (Y direction). In some embodiments, by not overlapping the first electrode portion 171a and the second electrode portion 171b in the horizontal direction (Y direction), the current distribution can be more uniform, which is beneficial to improving the uniformity of the light emission of the device.

Fig. 10 is a schematic view of a package structure of a semiconductor device according to an embodiment of the present invention. The package structure includes a semiconductor element 60, a package substrate 61, a carrier 63, bonding wires 65, contact structures 66, and a layer of encapsulation material 68. The package substrate 61 may include a ceramic or glass material. The package substrate 61 has a plurality of through holes 62 therein. The vias 62 may be filled with a conductive material, such as a metal, to facilitate electrical conduction and/or heat dissipation. The carrier 63 is located on a surface of one side of the package substrate 61, and also includes a conductive material, such as a metal. A contact structure 66 is located on the surface of the other side of the package substrate 61. In the present embodiment, the contact structure 66 includes a first contact pad 66a and a second contact pad 66b, and the first contact pad 66a and the second contact pad 66b can be electrically connected to the carrier 63 through the through hole 62. In one embodiment, the contact structure 66 may further include a thermal pad (not shown), for example, between the first contact pad 66a and the second contact pad 66 b. The semiconductor element 60 is disposed on the carrier 63, and may be a light emitting element according to any embodiment of the present invention. In this embodiment, the carrier 63 includes a first portion 63a and a second portion 63b, and the semiconductor element 60 is electrically connected to the second portion 63b of the carrier 63 by a bonding wire 65. The material of the bonding wire 65 may include a metal, such as gold, silver, copper, aluminum, or an alloy containing at least any of the above elements. The encapsulating material layer 68 covers the semiconductor element 60, and has an effect of protecting the semiconductor element 60. Specifically, the encapsulating material layer 68 may include a resin material such as epoxy resin (epoxy), silicone resin (silicone), or the like. The encapsulating material layer 68 may further include a plurality of wavelength conversion particles (not shown) for converting the first light emitted from the semiconductor element 60 into a second light. The second light has a wavelength greater than the wavelength of the first light.

The utility model discloses a light-emitting component or packaging structure can be applied to the product in fields such as illumination, medical treatment, demonstration, communication, sensing, electrical power generating system, for example lamps and lanterns, monitor, cell-phone, panel computer, automobile-used instrument board, TV, computer, wearing equipment (like wrist-watch, bracelet, necklace etc.), traffic sign, outdoor display, medical equipment etc..

FIG. 11 is a schematic diagram of an optoelectronic system 4 b. The electro-optical system 4b comprises a substrate 49, a plurality of pixels 40 ', and a control module 49'. A plurality of pixels 40' are located on the backplane 49 and are electrically connected to the backplane 49. A control module 49 'is electrically connected to the backplane 49 for controlling the plurality of pixels 40'. One of the pixels 40 'includes one or more light emitting elements 40b, the light emitting elements 40b include the

light emitting elements

100, 200, 300, 400, 500, 600, 700, 800 disclosed in any of the embodiments, and each light emitting element 40b can be independently controlled by the control module 49'. In one embodiment, each pixel 40' includes a light emitting unit for emitting red light, a light emitting unit for emitting blue light, and a light emitting unit for emitting green light, and at least one of the light emitting units includes a light emitting device 40 b. In one embodiment, the plurality of light emitting elements 40b on the base plate 49 may be arranged in a matrix having rows/columns, or have an asymmetrical polygonal peripheral outline. In one embodiment, the distance d between two adjacent pixels 40 'is preferably between 100 μm and 5mm, or the distance d' between two adjacent light emitting elements 40b is preferably between 100 μm and 500 μm.

It should be noted that the various embodiments presented above are intended to illustrate the invention, but not to limit the scope of the invention. Elements that are similar or identical in each embodiment or have the same reference numeral in different embodiments may have the same chemical or physical properties. In addition, elements shown in different embodiments may be combined with or replaced by each other as appropriate, and the connection relationship of the elements in one embodiment may be applied to another embodiment. The above-described embodiments may be modified in many ways without departing from the spirit and principles of the present invention, and are covered by the present invention and protected by the appended claims.

Claims

1. A light-emitting device, comprising:

a substrate;

a light emitting stack on the substrate, the light emitting stack having a light emitting surface and including a plurality of semiconductor layers;

an upper electrode on the light emitting surface, the upper electrode comprising:

an electrode portion including a first electrode portion and a second electrode portion having a first width, the first electrode portion and the second electrode portion not overlapping in a horizontal direction;

a first extension part electrically connected with the electrode part and having a second width; and

a plurality of second extending portions, one of which is connected with the first extending portion, the first electrode portion or the second electrode portion and has a third width, the second width being between the first width and the third width;

a contact structure located between the light emitting lamination and the substrate and not overlapped with the upper electrode in a direction perpendicular to the light emitting lamination; and

and the contact layer is positioned between the upper electrode and the light-emitting laminated layer.

2. The light-emitting device according to claim 1, further comprising a first window layer disposed between the light-emitting stack layer and the contact layer, wherein a surface of the first window layer is roughened.

3. The light-emitting device according to claim 1, wherein the width of the first extension portion is gradually varied, and the second width is a maximum width of the first extension portion.

4. The light-emitting device according to claim 1, wherein a current channel region is defined at a position on the light-emitting surface corresponding to the contact structure, the current channel region being located between any two adjacent second extension portions and the first extension portion; wherein the first extension portion has a shortest distance D1 from the current channel region, the current channel region has a shortest distance s2 from the contact layer, and the distance D1 is greater than the distance s 2.

5. The light-emitting device according to claim 1, wherein a current channel region is defined at a position on the light-emitting surface corresponding to the contact structure, the current channel region being located between any two adjacent second extension portions and the first extension portion; wherein the contact layer has an end portion, a shortest distance s1 is provided between the end portion and the current path region, a shortest distance s2 is provided between the current path region and the contact layer, and a range of s1/s2 is greater than 0 and less than 5.

6. The light-emitting element according to claim 1, wherein the contact structure comprises a group III-V semiconductor material.

7. The light-emitting device according to claim 1, wherein a current channel region is defined at a position on the light-emitting surface corresponding to the contact structure, the current channel region being located between any two adjacent second extension portions and the first extension portion; wherein, in the direction perpendicular to the light emitting laminated layer, a distance H1 exists between the contact layer and the contact structure, a shortest distance s2 exists between the current channel region and the contact layer, and the distance s2 is greater than the distance H1.

8. The light-emitting element according to claim 1, wherein the contact layer does not overlap with the first extension portion and the electrode portion in a direction perpendicular to the light-emitting stack.

9. The light-emitting device according to claim 1, wherein the width of the second extension portion is gradually varied.

10. The light-emitting device according to claim 1, wherein the first extension portion is substantially perpendicular to the plurality of second extension portions.

11. The light-emitting device according to claim 1, wherein the second width is larger than the third width.

12. The light-emitting device according to claim 1, further comprising a reflective layer between the substrate and the light-emitting stack.

13. The light-emitting device according to claim 12, further comprising an insulating layer on the reflective layer and comprising a plurality of holes.

14. The light-emitting element according to claim 13, wherein a thickness of the contact structure is larger than a thickness of the insulating layer.

15. The light-emitting device according to claim 2, further comprising a second window layer between the light-emitting stack and the contact structure, wherein the first window layer has a thickness greater than that of the second window layer.

16. The light-emitting device according to claim 2, further comprising a passivation layer covering the roughened surface.

17. The light-emitting element according to claim 1, wherein another one of the plurality of second extending portions is connected to both the first electrode portion and the second electrode portion.

18. The light-emitting device according to claim 1, wherein the contact layer has a first portion and a second portion, and the first portion is disposed under the second extending portion.

19. The light-emitting element according to claim 18, wherein the second portion vertically overlaps with a portion of the first extension portion.

20. The light-emitting device according to claim 1, wherein the contact layer is spaced apart from the first extension.

21. The light-emitting device according to claim 1, wherein the contact layer has a side surface and an upper surface, and the plurality of second extending portions cover the side surface and the upper surface.

22. The light-emitting device according to claim 1, wherein a current channel region is defined at a position on the light-emitting surface corresponding to the contact structure, the current channel region is located between any two adjacent second extending portions and the first extending portion, and in a top view, the current channel region includes a plurality of regions in a dot-shaped array.

23. The light-emitting device according to claim 1, wherein the light-emitting device has a first side, a second side, a third side and a fourth side surrounding the light-emitting surface, the first electrode portion is closest to the first side and the second electrode portion is closest to the second side, and each of the second extending portions is substantially parallel to the third side or the fourth side.

24. A package structure, comprising:

a carrier;

the light-emitting element according to any one of claims 1 to 23, which is provided on the carrier; and

and the packaging material layer covers the light-emitting element.

25. An optoelectronic assembly, comprising:

a base plate;

the light-emitting element according to any one of claims 1 to 23, located on the base plate; and

and a control module.