CN213752717U - High-power Schottky rectifier tube - Google Patents
High-power Schottky rectifier tube Download PDFInfo
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- CN213752717U CN213752717U CN202023050596.6U CN202023050596U CN213752717U CN 213752717 U CN213752717 U CN 213752717U CN 202023050596 U CN202023050596 U CN 202023050596U CN 213752717 U CN213752717 U CN 213752717U
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 77
- 239000002184 metal Substances 0.000 claims abstract description 77
- 230000004888 barrier function Effects 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 10
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 10
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 description 12
- 230000033001 locomotion Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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Abstract
The utility model provides a powerful schottky rectifier tube, including substrate layer, negative pole metal level, epitaxial layer, first positive pole metal level, SiO2The layer, first positive pole metal level lower extreme face forms first schottky barrier, first positive pole metal level both sides still are equipped with second positive pole metal level, second positive pole metal level cover the epitaxial layer upper end, second positive pole metal level lower extreme face forms the second schottky barrier, first positive pole metal level both sidesThe lower ends of the first Schottky barrier and the second Schottky barrier are respectively connected with an extending part, the extending parts are connected with the second anode metal layer, a first P-type guard ring is arranged between the first Schottky barrier and the second Schottky barrier, and a second P-type guard ring is arranged on the outer side of the second Schottky barrier. The utility model discloses a schottky rectifier tube has that transmission speed is fast, high current, powerful characteristics, is applicable to among equipment such as communication power supply, converter.
Description
Technical Field
The utility model relates to a schottky rectifier tube technical field, concretely relates to powerful schottky rectifier tube.
Background
The Schottky rectifier tube is made of noble metal (gold, silver, or a combination thereof,Aluminum, platinum, etc.) a as a positive electrode, and an N-type semiconductor B as a negative electrode, and has rectifying properties by utilizing a barrier formed on a contact surface between the positive electrode and the negative electrode. Since the N-type semiconductor contains a large number of electrons and the noble metal contains only a very small number of free electrons, electrons diffuse from a high concentration of B to a low concentration of a. Obviously, there are no holes in metal a, and there is no diffusion movement of holes from a to B. As electrons diffuse from B to A, the surface electron concentration of B gradually decreases, and the surface charge neutrality is destroyed, thus forming a potential barrier with the electric field direction of B → A. However, under the action of the electric field, the electrons in A also generate drift motion from A → B, thereby weakening the electric field formed by diffusion motion. When a space charge region with a certain width is established, electron drift motion caused by an electric field and electron diffusion motion caused by different concentrations reach relative balance, and a Schottky barrier is formed. In the conventional schottky rectifying tube, because the surface electric field exists at the edge of the anode metal, in order to reduce the influence of the surface electric field on the withstand voltage value of the tube, the anode metal is generally designed to have a size which is not too large, and the outer side surface of the anode metal is covered with SiO2For eliminating the electric field at the edge area of the anode metal. The amount of current and power available to the tube in the forward direction is severely limited due to the size of the anode metal.
SUMMERY OF THE UTILITY MODEL
To above problem, the utility model provides a powerful schottky rectifier tube has that transmission speed is fast, high current, powerful characteristics, is applicable to in equipment such as communication power supply, converter.
In order to achieve the above object, the present invention provides the following technical solutions:
a high-power Schottky rectifier tube comprises a substrate layer, a cathode metal layer connected to the lower end of the substrate layer, an epitaxial layer connected to the upper end of the substrate layer, a first anode metal layer connected to the upper end of the epitaxial layer, and SiO covered on the outer side of the first anode metal layer2A first anode metal layer with a lower end face forming a first Schottky barrier, and a second anode metal layer arranged on both sides of the first anode metal layerThe second anode metal layer covers the upper end of the epitaxial layer, a second Schottky barrier is formed on the lower end face of the second anode metal layer, the lower ends of the two sides of the first anode metal layer are connected with extension parts, the extension parts are connected with the second anode metal layer, a first P-type guard ring is arranged between the first Schottky barrier and the second Schottky barrier, and a second P-type guard ring is arranged on the outer side of the second Schottky barrier.
Specifically, the cross-sectional structure of the second anode metal layer is an isosceles trapezoid structure.
Specifically, the substrate layer, the cathode metal layer, the epitaxial layer and SiO2The outer side of the layer is also covered with an insulating protective film.
Specifically, a groove is formed in the middle of the upper end of the first anode metal layer.
Specifically, the second anode metal layer and the extension part are both positioned on the SiO2Inside the layer.
The utility model has the advantages that:
the utility model discloses a schottky rectifier tube, be equipped with first positive pole metal level and two second positive pole metal levels on the epitaxial layer, terminal surface formation first schottky barrier under the first positive pole metal level, terminal surface formation second schottky barrier under the second positive pole metal level, the extension and two second positive pole metal level of first positive pole metal level are connected, the electric conductivity when having improved schottky rectifier tube forward transport, it is fast to have transmission speed, high current, powerful characteristics, be applicable to communication power supply, in equipment such as converter.
Drawings
Fig. 1 is a schematic structural view of a high-power schottky rectifier of the present invention.
The reference signs are: substrate layer 1, cathode metal layer 2, epitaxial layer 3, first anode metal layer 4, SiO2Layer 5, second anode metal layer 6, extension 7, first P-type guard ring 8, second P-type guard ring 9, insulating protective film 10, recess 11.
Detailed Description
The present invention will be described in further detail with reference to the following examples and drawings, but the present invention is not limited thereto.
As shown in fig. 1:
a high-power Schottky rectifier tube comprises a substrate layer 1, a cathode metal layer 2 connected to the lower end of the substrate layer 1, an epitaxial layer 3 connected to the upper end of the substrate layer 1, a first anode metal layer 4 connected to the upper end of the epitaxial layer 3, and SiO covered on the outer side of the first anode metal layer 42Layer 5, substrate layer 1 is N-type semiconductor, epitaxial layer 3 is N-epitaxial layer formed by arsenic as dopant, first anode metal layer 4 is made of aluminum material, when conducting positively, because surface electric field exists at edge of first anode metal layer 4, SiO is increased2The layer 5 is used for eliminating an electric field in an edge area so as to improve the voltage resistance value of the Schottky rectifier tube, the electron drift motion caused by the electric field and the electron diffusion motion caused by different concentrations between the first anode metal layer 4 and the substrate layer 1 reach relative balance, so that a first Schottky barrier is formed, the first Schottky barrier is formed at the lower end face of the first anode metal layer 4, the second anode metal layer 6 is further arranged at two sides of the first anode metal layer 4, the second anode metal layer 6 covers the upper end of the epitaxial layer 3, the electron drift motion caused by the electric field and the electron diffusion motion caused by different concentrations between the second anode metal layer 6 and the substrate layer 1 reach relative balance, so that a second Schottky barrier is formed, the second Schottky barrier is formed at the lower end face of the second anode metal layer 6, and in order to realize the electrical connection between the first anode metal layer 4 and the second anode metal layer 6, the extension portion 7 is all connected with to first anode metal layer 4 both sides lower extreme, extension portion 7 is connected with second anode metal layer 6, be equipped with first P type guard ring 8 between first schottky barrier and the second schottky barrier, the second schottky barrier outside is equipped with second P type guard ring 9, compare traditional schottky rectifier tube structure, two second anode metal layers 6 have been increased, form three schottky barrier promptly, the conducting power when having improved schottky rectifier tube forward transport, it is fast to have a transmission speed, high current, powerful characteristics, be applicable to communication power, in equipment such as converter.
Preferably, in order to increase the contact area between the second anode metal layer 6 and the epitaxial layer 3 and further improve the forward conductivity of the schottky barrier diode, the cross-sectional structure of the second anode metal layer 6 is an isosceles trapezoid structure.
Preferably, the substrate layer 1, the cathode metal layer 2, the epitaxial layer 3, SiO2The outside of layer 5 still covers there is one deck insulating protective film 10, and insulating protective film 10's effect carries out insulation protection to the lateral surface of schottky rectifier tube, prevents the electric leakage.
Preferably, the first anode metal layer 4 has a groove 11 formed in the middle of the upper end thereof.
Preferably, the second anode metal layer 6 and the extension part 7 are both located on SiO2Layer 5 inner side, SiO2The layer 5 can act on the first anode metal layer 4 and the second anode metal layer 6 simultaneously, and simultaneously eliminate the surface electric field generated in the edge area of the first anode metal layer 4 and the second anode metal layer 6 so as to improve the voltage withstanding value of the Schottky rectifier tube.
The above examples only represent 1 embodiment of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (5)
1. A high-power Schottky rectifier tube comprises a substrate layer (1), a cathode metal layer (2) connected to the lower end of the substrate layer (1), an epitaxial layer (3) connected to the upper end of the substrate layer (1), a first anode metal layer (4) connected to the upper end of the epitaxial layer (3), and SiO covered on the outer side of the first anode metal layer (4)2Layer (5), terminal surface forms first schottky barrier under first anode metal layer (4), its characterized in that, first anode metal layer (4) both sides still are equipped with second anode metal layer (6), second anode metal layer (6) cover epitaxial layer (3) upper end, terminal surface forms the second schottky barrier under second anode metal layer (6), first anode goldThe lower ends of two sides of the layer (4) are connected with extending parts (7), the extending parts (7) are connected with the second anode metal layer (6), a first P-type protection ring (8) is arranged between the first Schottky barrier and the second Schottky barrier, and a second P-type protection ring (9) is arranged on the outer side of the second Schottky barrier.
2. A high power schottky rectifier tube according to claim 1, wherein the cross-sectional structure of the second anode metal layer (6) is an isosceles trapezoid structure.
3. A high power schottky rectifier tube according to claim 1, wherein said substrate layer (1), cathode metal layer (2), epitaxial layer (3), SiO2The outer side of the layer (5) is also covered with an insulating protective film (10).
4. A high power schottky rectifier tube according to claim 1, wherein the first anode metal layer (4) is formed with a recess (11) in the middle of its upper end.
5. A high power schottky rectifier tube according to claim 1, wherein the second anode metal layer (6), the extension (7) are all located on the SiO2Inside the layer (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023050596.6U CN213752717U (en) | 2020-12-17 | 2020-12-17 | High-power Schottky rectifier tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023050596.6U CN213752717U (en) | 2020-12-17 | 2020-12-17 | High-power Schottky rectifier tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213752717U true CN213752717U (en) | 2021-07-20 |
Family
ID=76834822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023050596.6U Active CN213752717U (en) | 2020-12-17 | 2020-12-17 | High-power Schottky rectifier tube |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213752717U (en) |
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2020
- 2020-12-17 CN CN202023050596.6U patent/CN213752717U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231109 Address after: 523430 Building 1 and 2, No. 70, Liaobu Baiye Road, Liaobu Town, Dongguan City, Guangdong Province Patentee after: Xianzhike semiconductor technology (Dongguan) Co.,Ltd. Address before: 523430 Room 102, building 1, 76 Baiye Road, Liaobu Town, Dongguan City, Guangdong Province Patentee before: Mutual Creation (Dongguan) Electronic Technology Co.,Ltd. |
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| TR01 | Transfer of patent right |