CN213752650U - Silicon chip reaction transfer device for vertical growth of two-dimensional material - Google Patents
Silicon chip reaction transfer device for vertical growth of two-dimensional material Download PDFInfo
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- CN213752650U CN213752650U CN202022807355.5U CN202022807355U CN213752650U CN 213752650 U CN213752650 U CN 213752650U CN 202022807355 U CN202022807355 U CN 202022807355U CN 213752650 U CN213752650 U CN 213752650U
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- silicon wafer
- placing cavity
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Abstract
The utility model relates to a silicon wafer reaction transfer device for vertical growth of two-dimensional materials, which comprises a silicon wafer seat and a gland; a clamping groove is formed in the side face of the silicon wafer seat, and a polygonal silicon wafer placing cavity is formed in the upper end face of the silicon wafer seat; the silicon wafer placing cavity is arranged on the silicon wafer seat, the pressing cover is sleeved at the upper end of the silicon wafer seat, a pressing cover hole is formed in the pressing cover corresponding to the position of the silicon wafer placing cavity, and the corner of the silicon wafer placing cavity is located outside the pressing cover hole. The utility model has the advantages of being simple in structure and convenient in operation, being inclined to change and shift the silicon chip, when evacuation and spraying, because the silicon chip is pushed down to the gland, the silicon chip can not drop.
Description
Technical Field
The utility model belongs to the technical field of two-dimensional material growth device, specifically speaking are silicon chip reaction transfer device of two-dimensional material vertical growth.
Background
The silicon wafer of the conventional two-dimensional material equipment is placed in a quartz boat: the silicon chip is inconvenient to replace and transfer, and the silicon chip can drop off during vacuumizing and spraying.
Disclosure of Invention
The utility model aims at overcoming the not enough of existence among the prior art, provide a two-dimensional material vertical growth's silicon chip reaction transfer device convenient to change the silicon chip and can prevent that the silicon chip from dropping.
According to the technical scheme provided by the utility model, the silicon wafer reaction transfer device with the vertically grown two-dimensional material comprises a silicon wafer seat and a gland; a clamping groove is formed in the side face of the silicon wafer seat, and a polygonal silicon wafer placing cavity is formed in the upper end face of the silicon wafer seat; the silicon wafer placing cavity is arranged on the silicon wafer seat, the pressing cover is sleeved at the upper end of the silicon wafer seat, a pressing cover hole is formed in the pressing cover corresponding to the position of the silicon wafer placing cavity, and the corner of the silicon wafer placing cavity is located outside the pressing cover hole.
Preferably, the silicon wafer placing cavity is rectangular or square.
Preferably, the depth of the silicon wafer placing cavity is 0.8-2 mm.
The utility model has the advantages of being simple in structure and convenient in operation, being inclined to change and shift the silicon chip, when evacuation and spraying, because the silicon chip is pushed down to the gland, the silicon chip can not drop.
Drawings
Fig. 1 is a front view of the present invention.
Fig. 2 is a plan view of the present invention.
Detailed Description
The present invention will be further described with reference to the following specific embodiments.
A silicon chip reaction transfer device for vertical growth of two-dimensional materials comprises a silicon chip seat 1 and a gland 2; a clamping groove 11 is formed in the side surface of the silicon wafer seat 1, and a polygonal silicon wafer placing cavity 12 is formed in the upper end surface of the silicon wafer seat 1; the gland 2 is sleeved at the upper end of the silicon wafer seat 1, a gland hole 21 is formed in the gland 2 corresponding to the position of the silicon wafer placing cavity 12, and the corner of the silicon wafer placing cavity 12 is located outside the gland hole 21.
The silicon wafer placing cavity 12 is rectangular or square.
The depth of the silicon wafer placing cavity 12 is 0.8-2 mm.
The utility model discloses when using, place cavity 12 center with tweezers with the silicon chip that silicon chip 3 put into silicon chip seat 1, press up gland 2, put into the interior appearance push rod 4 that send of vacuum chamber with it at centre gripping recess 11 positions, send into the heating furnace by sending appearance push rod 4 with clip centre gripping. Because the corner of the silicon wafer placing cavity 12 is positioned outside the gland hole 21, after the silicon wafer placing cavity 12 is placed in the silicon wafer 3 and the gland 2 is pressed, the gland 2 can press the corner of the chip 3, and the silicon wafer 3 is prevented from moving during transfer. The condition of the silicon wafer 3 at the time of transfer can be observed through the cap pressing hole 21. The utility model has the advantages of being simple in structure and convenient in operation, being inclined to change and shift silicon chip 3, when evacuation and spraying, because gland 2 pushes down silicon chip 3, silicon chip 3 can not drop.
Claims (3)
1. A silicon chip reaction transfer device for vertical growth of two-dimensional materials comprises a silicon chip seat (1) and a gland (2); the method is characterized in that: a clamping groove (11) is formed in the side face of the silicon wafer seat (1), and a polygonal silicon wafer placing cavity (12) is formed in the upper end face of the silicon wafer seat (1); the pressing cover (2) is sleeved at the upper end of the silicon wafer seat (1), a pressing cover hole (21) is formed in the pressing cover (2) corresponding to the position of the silicon wafer placing cavity (12), and the corner of the silicon wafer placing cavity (12) is located outside the pressing cover hole (21).
2. The silicon wafer reaction transfer device for vertical growth of two-dimensional materials according to claim 1, wherein: the silicon chip placing cavity (12) is rectangular or square.
3. The silicon wafer reaction transfer device for vertical growth of two-dimensional materials according to claim 1 or 2, characterized in that: the depth of the silicon wafer placing cavity (12) is 0.8-2 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022807355.5U CN213752650U (en) | 2020-11-27 | 2020-11-27 | Silicon chip reaction transfer device for vertical growth of two-dimensional material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022807355.5U CN213752650U (en) | 2020-11-27 | 2020-11-27 | Silicon chip reaction transfer device for vertical growth of two-dimensional material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213752650U true CN213752650U (en) | 2021-07-20 |
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ID=76831090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022807355.5U Active CN213752650U (en) | 2020-11-27 | 2020-11-27 | Silicon chip reaction transfer device for vertical growth of two-dimensional material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213752650U (en) |
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2020
- 2020-11-27 CN CN202022807355.5U patent/CN213752650U/en active Active
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