CN213661583U - Surface acoustic wave filter chip packaging structure - Google Patents
Surface acoustic wave filter chip packaging structure Download PDFInfo
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- CN213661583U CN213661583U CN202022934517.1U CN202022934517U CN213661583U CN 213661583 U CN213661583 U CN 213661583U CN 202022934517 U CN202022934517 U CN 202022934517U CN 213661583 U CN213661583 U CN 213661583U
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- wave filter
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- filter chip
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Abstract
The utility model provides a surface acoustic wave filter chip packaging structure, it includes the surface acoustic wave filter chip, the surface acoustic wave filter chip includes relative functional surface and non-functional face, the functional surface is formed with the functional area and locates the pad of functional area week side, packaging structure still includes capping layer, metal level and solder ball, the capping layer covers in the functional surface, and form airtight cavity between the functional area to be formed with the perforating hole that exposes the pad on the pad; the metal layer is filled in the through hole, an inward-concave limiting groove is formed on the upper surface of the metal layer, and the metal layer and the limiting groove are of an integral electroplating forming structure; the solder ball is arranged on the upper surface of the metal layer, and a bulge matched with the limiting groove is formed at the bottom of the solder ball. The limiting groove directly formed by the electroplating process plays a role in positioning and limiting the implantation of the solder balls, the yield of the solder ball implantation process is improved, the limiting groove is formed by the electroplating process, and the process method is simple and convenient.
Description
Technical Field
The utility model relates to a packaging technology field specifically relates to a surface acoustic wave filter chip packaging structure.
Background
The surface acoustic wave filter is an important part of a mobile communication terminal product, and a cover plate is required to cover the functional area of the surface acoustic wave filter chip to form a cavity structure due to the performance and design function requirements of the surface acoustic wave filter product, and a solder ball is electrically connected with a chip bonding pad through a through hole filled with a metal layer on the cover plate.
However, in the prior art, the upper surface of the metal layer in the through hole is a plane, and when the ball is planted thereon, the formation of the solder ball and the stability of the performance thereof are not facilitated. In the prior art, the formation of the groove on the metal layer is usually to strengthen the connection between the metal layer and the solder ball, and a complex hole-groove structure needs to be formed through additional etching or laser and other processes, so that the process is complex and tedious.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a surface acoustic wave filter chip packaging structure.
The utility model provides a surface acoustic wave filter chip packaging structure, it includes the surface acoustic wave filter chip, the surface acoustic wave filter chip includes relative functional surface and non-functional face, the functional surface is formed with the functional area and locates the pad of functional area week side, packaging structure still includes capping layer, metal level and solder ball, capping layer cover in the functional area, with form airtight cavity between the functional area, and be formed with the perforating hole that exposes the pad on the pad;
the metal layer is filled in the through hole, an inward-concave limiting groove is formed on the upper surface of the metal layer, and the metal layer and the limiting groove are of an integral electroplating forming structure;
the solder balls are arranged on the upper surface of the metal layer, and a bulge matched with the limiting groove is formed at the bottom of the solder balls.
As a further improvement of the utility model, the depth of the limiting groove is 5% -20% of the diameter of the solder ball.
As a further improvement of the utility model, the cross section of the limiting groove is circular, and the diameter of the cross section of the upper surface of the metal layer is 45% -65% of the diameter of the solder ball, and the diameter of the cross section of the concave direction of the limiting groove is gradually reduced.
As a further improvement of the present invention, the limiting groove is coaxially disposed with the through hole.
As a further improvement of the present invention, the capping layer is a polymer film, and a seed layer is further formed between the metal layer and the through hole.
The utility model has the advantages that: the utility model discloses cover the capping layer on surface acoustic wave filter chip to directly make the upper surface through electroplating process and form the metal level that has spacing recess in the through hole of capping layer, spacing recess plays the effect of location and restriction to the implantation of solder ball, has improved the yield that the process was implanted to the solder ball, and forms spacing recess through electroplating process, and technological method is simple convenient.
Drawings
Fig. 1 is a schematic flow chart illustrating a manufacturing method of a surface acoustic wave filter chip package structure according to an embodiment of the present invention.
Fig. 2 to fig. 6 are schematic diagrams illustrating steps of a manufacturing method of a surface acoustic wave filter chip package structure according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more clear, the technical solutions of the present application will be clearly and completely described below with reference to the detailed description of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments obtained by a person of ordinary skill in the art without any inventive work based on the embodiments in the present application are within the scope of protection of the present application.
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.
For convenience in explanation, the description herein uses terms indicating relative spatial positions, such as "upper," "lower," "rear," "front," and the like, to describe one element or feature's relationship to another element or feature as illustrated in the figures. The term spatially relative position may encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "above" other elements or features would then be oriented "below" or "above" the other elements or features. Thus, the exemplary term "below" can encompass both a spatial orientation of below and above.
As shown in fig. 1, the utility model provides a surface acoustic wave filter chip packaging structure manufacturing method, including the step:
s1: as shown in fig. 2, a surface acoustic wave filter chip 1 provided with a functional region 111 and pads 112 on a functional surface 11 is provided.
The surface acoustic wave filter chip 1 includes a functional surface 11 and a non-functional surface 12 opposed to each other, and the functional surface 11 is formed with a functional region 111 and pads 112 provided on the peripheral side of the functional region 111.
The functional region 111 includes structures such as a piezoelectric material substrate and a transducer, and is used for realizing functions such as propagation and conversion processing of acoustic signals and electric signals by the surface acoustic wave filter chip 1.
Specifically, in the present embodiment, the pads 112 are uniformly and symmetrically distributed around the functional region 111. In other embodiments, the distribution of the pads 112 may also be adjusted according to the chip layout design.
S2: as shown in fig. 3a and 3b, the functional surface 11 is covered with the cap layer 2, and a through hole 21 is formed in a region of the cap layer 2 corresponding to the pad 112, exposing the pad 112.
The cover layer 2 covers the functional surface 11 and forms a closed cavity 22 with the functional region 111, thereby forming a protection cavity for the saw filter chip 1 and forming a non-interference cavity required by the working region. The capping layer 2 is formed with a through hole 21 exposing the pad 112 on the pad 112, and leaves a space for the saw filter chip 1 to be electrically connected to the outside.
Specifically, in the present embodiment, the "cover capping layer 2" specifically includes the steps of:
as shown in fig. 3a, covering the functional surface 11 with a first high polymer film layer 2a, and photoetching the first high polymer film layer 2a to expose the functional region 111 and the bonding pad 112;
as shown in fig. 3b, a second high polymer film layer 2b is covered on the first high polymer film layer 2a, and the second high polymer film layer 2b is photo-etched to expose the bonding pad 112.
The two high polymer film layers are subjected to photoetching step by step to form the closed cavity 22 on the functional region 111 and the through hole 21 on the bonding pad 112 respectively, the process flow is simple, and the high polymer film layer is adopted as the capping layer 2, so that the thickness of the capping layer 2 can be reduced.
Specifically, in the present embodiment, the capping layer 2 is an epoxy resin film layer.
In other embodiments of the present invention, the cover layer 2 may be a cover plate made of other materials such as glass.
Further, as shown in fig. 4, in some other embodiments of the present invention, the step of covering the capping layer 2 further comprises:
a seed layer 3 is formed on the capping layer 2.
The seed layer 3 is Ti/Cu or TiW/Cu, etc., which is formed between the metal layer 4 and the capping layer 2, plays an adhesion role and serves as a seed layer for forming the metal layer 4 by electroplating.
S3: as shown in fig. 5, a metal layer 4 is formed in the through hole 21 by electroplating, and a limiting groove 41 which is naturally recessed is formed on the upper surface of the metal layer 4 by adjusting the electroplating process.
The metal layer 4 is a metal having good conductive properties such as Cu.
In the electroplating process, a naturally concave pit is formed on the upper surface of the metal layer 4 by adjusting electroplating process parameters such as current density, electroplating solution formula and the like, so that the metal layer 4 with the limiting groove 41 is obtained through the electroplating process, additional processes such as etching and the like are not needed, the process flow is simple, convenient and fast, and the implementation is easy.
After the metal layer 4 is plated on the seed layer 3, the excess seed layer 3 is removed by photolithography or the like.
S4: as shown in fig. 6, solder balls 5 are implanted on the metal layer 4.
And implanting solder balls 5 on the upper surface of the metal layer 4 by electroplating, screen printing, laser ball implantation and other processes.
During ball mounting, the solder ball 5 tends to fill the limiting groove 41 first, and a protrusion 51 matching with the limiting groove 41 is formed at the bottom thereof. And then grow and shape with bellying 51 as the basis to play the effect of location and growth restriction to welding ball 5 through spacing recess 41, make the ball planting rate of accuracy improve.
Furthermore, the depth of the limiting groove 41 is 5% -20% of the diameter of the solder ball 5, and the lower limit of the depth of the limiting groove 41 is limited to 5% of the diameter of the solder ball 5, so as to ensure that the limiting groove 41 has enough depth to limit the solder ball 5; the upper limit of the depth of the limiting recess 41 is defined to be 20% of the diameter of the solder ball 5 to avoid the depth of the limiting recess 41 from being too deep, which results in difficulty in implementation by the plating process.
Furthermore, the cross section of the limiting groove 41 formed by electroplating is circular, the diameter of the cross section of the limiting groove 41 is gradually reduced along the inward concave direction of the limiting groove 41, and the diameter of the cross section of the limiting groove on the upper surface of the metal layer 4 is 45% -65% of the diameter of the solder ball 5, so that the limiting groove 41 can perform a good limiting effect on the solder ball 5, the situation that the limiting groove 41 is too small to perform a limiting effect or too large to perform a limiting effect is avoided, and the limiting groove 41 with the size is easy to realize through an electroplating process.
Specifically, in the present embodiment, the diameter of the solder ball 5 is 100 μm, the depth of the limiting groove 41 is 7-15 μm, and the cross-sectional diameter of the limiting groove at the upper surface of the metal layer 4 is 60 μm.
Furthermore, the limiting groove 41 is formed by sinking downwards along the central axis of the through hole 21, so that the solder ball 5 formed based on the limiting groove 41 can be accurately formed on the through hole 21, and the ball forming quality and the good electrical connection between the ball forming and the substrate are ensured.
As shown in fig. 6, the utility model also provides a surface acoustic wave filter chip 1 packaging structure, it includes surface acoustic wave filter chip 1, capping layer 2, metal level 4 and solder ball 5. The surface acoustic wave filter chip 1 includes a functional surface 11 and a non-functional surface 12 opposed to each other, and the functional surface 11 is formed with a functional region 111 and pads 112 provided on the peripheral side of the functional region 111.
The capping layer 2 includes a first polymer film layer 2a and a second polymer film layer 2b, the first polymer film layer 2a exposes the bonding pad 112 and the working area, and the second polymer film layer 2b covers the first polymer film layer 2a to expose the bonding pad 112, thereby forming a sealed cavity 22 covering the functional area 111 and a through hole 21 exposing the bonding pad 112.
The metal layer 4 is filled in the through hole 21, an inward concave limiting groove 41 is formed on the upper surface of the metal layer 4, and the metal layer 4 and the limiting groove 41 are of an integral electroplating forming structure.
The solder ball 5 is disposed on the upper surface of the metal layer 4, and a protrusion 51 matching with the limiting groove 41 is formed on the bottom thereof.
Further, the depth of the limiting groove 41 is 5% -20% of the diameter of the solder ball 5.
Furthermore, the cross section of the limiting groove 41 is circular, the diameter of the cross section of the limiting groove on the upper surface of the metal layer 4 is 45% -65% of the diameter of the solder ball 5, and the diameter of the cross section of the limiting groove is gradually reduced along the inward concave direction of the limiting groove 41.
Further, the stopper groove 41 is provided coaxially with the through hole 21.
In some other embodiments of the present invention, a seed layer 3 is further disposed between the metal layer 4 and the through hole 21.
To sum up, the utility model discloses cover the capping layer on surface acoustic wave filter chip to directly make the upper surface through electroplating process and be formed with the metal level of spacing recess in the through hole of capping layer, spacing recess plays the effect of location and restriction to the implantation of solder ball, has improved the yield of solder ball implantation process, and forms spacing recess through electroplating process, and process is simple convenient.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above list of details is only for the feasible embodiments of the present invention, and is not intended to limit the scope of the present invention, and all equivalent embodiments or modifications that do not depart from the technical spirit of the present invention are intended to be included within the scope of the present invention.
Claims (5)
1. A surface acoustic wave filter chip packaging structure comprises a surface acoustic wave filter chip, wherein the surface acoustic wave filter chip comprises a functional surface and a non-functional surface which are opposite, the functional surface is provided with a functional area and a bonding pad arranged on the peripheral side of the functional area,
the packaging structure further comprises a sealing cover layer, a metal layer and a solder ball, wherein the sealing cover layer covers the functional surface, a closed cavity is formed between the sealing cover layer and the functional area, and a through hole for exposing the bonding pad is formed on the bonding pad;
the metal layer is filled in the through hole, an inward-concave limiting groove is formed on the upper surface of the metal layer, and the metal layer and the limiting groove are of an integral electroplating forming structure;
the solder balls are arranged on the upper surface of the metal layer, and a bulge matched with the limiting groove is formed at the bottom of the solder balls.
2. The surface acoustic wave filter chip packaging structure as claimed in claim 1, wherein the depth of the stopper groove is 5% to 20% of the diameter of the solder ball.
3. The surface acoustic wave filter chip package structure according to claim 2, wherein the cross-section of the stopper groove is circular, the diameter of the cross-section of the stopper groove at the upper surface of the metal layer is 45% to 65% of the diameter of the solder ball, and the diameter of the cross-section of the stopper groove gradually decreases along the concave direction of the stopper groove.
4. The surface acoustic wave filter chip packaging structure according to any one of claims 1 to 3, wherein the stopper groove is provided coaxially with the through hole.
5. The surface acoustic wave filter chip package structure as claimed in claim 1, wherein the capping layer is a polymer film, and a seed layer is disposed between the metal layer and the through hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022934517.1U CN213661583U (en) | 2020-12-07 | 2020-12-07 | Surface acoustic wave filter chip packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022934517.1U CN213661583U (en) | 2020-12-07 | 2020-12-07 | Surface acoustic wave filter chip packaging structure |
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| CN213661583U true CN213661583U (en) | 2021-07-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114826185A (en) * | 2022-05-23 | 2022-07-29 | 河北时硕微芯科技有限公司 | Surface acoustic wave filter packaging method and structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114826185A (en) * | 2022-05-23 | 2022-07-29 | 河北时硕微芯科技有限公司 | Surface acoustic wave filter packaging method and structure |
| CN114826185B (en) * | 2022-05-23 | 2023-03-10 | 河北时硕微芯科技有限公司 | Surface acoustic wave filter packaging method and structure |
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