CN213659027U - Light emitting device applied to super-working temperature environment - Google Patents
Light emitting device applied to super-working temperature environment Download PDFInfo
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- CN213659027U CN213659027U CN202022592460.1U CN202022592460U CN213659027U CN 213659027 U CN213659027 U CN 213659027U CN 202022592460 U CN202022592460 U CN 202022592460U CN 213659027 U CN213659027 U CN 213659027U
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Abstract
The application provides a light emitting device applied to a super working temperature environment, wherein the light emitting device comprises a TEC temperature controller, a laser array, a lens array, an optical combiner, a lens and a thermistor; the TEC temperature controller is provided with a first face and a second face which are opposite, and the first face of the TEC temperature controller is at a constant temperature; the laser array, the lens array, the optical combiner, the lens and the thermistor are arranged on the first surface of the TEC temperature controller, and the laser array, the lens array, the optical combiner and the lens are sequentially arranged; the light emitted by the laser array is emitted after passing through the lens array, the optical combiner and the lens; the thermistor is close to the laser array and is electrically connected with the TEC temperature controller. A plurality of photoelectric elements are placed on the TEC temperature controller, so that the temperature of the first surface of the TEC temperature controller is maintained at a constant temperature, and the temperature sensitive element keeps the working temperature stable and unchanged in the super working temperature environment, thereby solving the requirement of a light emitting device in the application field of the super working temperature environment.
Description
Technical Field
The application relates to the technical field of optical communication, in particular to a light emitting device applied to a super working temperature environment.
Background
The optical transmitter is a core component of an optical module (i.e., an optical communication module), and with the improvement of the working rate of the optical module and the introduction of a wavelength division multiplexing technology, multiple wavelengths can be adopted in a single optical transmitter, each wavelength is independently modulated, and signals with different wavelengths are coupled to the same output port through an optical combiner, and then transmitted through one optical fiber.
The semiconductor laser can control output optical power by adjusting input current, thereby realizing high-low power output and converting a digital model into an optical pulse signal. The core optical device in the optical module needs to meet the requirement of normal operation under different temperature conditions, and the working wavelength of the laser in the light emitting device can shift along with the change of the ambient temperature.
The working temperature range of the optical module is generally work temperature (-40-85 ℃) and business temperature (-5-75 ℃), and in some special application occasions, the optical module needs to be applied to a wider temperature range and can keep good working characteristics. The optical device comprises a light emitting device and a light receiving device, the optical device is a core component of an optical module, the core function is to realize the mutual conversion of photoelectric signals, and the optical device mainly structurally packages an optical path element, a photoelectric chip and a related structural component together, provides protection for the photoelectric element while providing optical signal/electric signal transmission, and prevents the photoelectric element from being damaged by high-temperature and high-humidity environment.
The common optical device packaging modes include a BOX packaging mode and a coaxial packaging mode, and the coaxial packaging mode is relatively simple and generally only supports single-channel operation. With the development of wavelength division multiplexing technology, an optical device capable of meeting the requirement of multi-channel multi-wavelength operation is required, and a complex optical path can be designed and embedded in the device in a box type packaging mode.
The semiconductor laser with a distributed Bragg grating structure is mostly adopted in a high-speed light emitting device, and due to the temperature strain characteristic of a medium, the grating period changes along with the change of the temperature, so that a proportional relation exists between the emission wavelength and the temperature of the semiconductor laser, and the proportional relation is about the change of 0.09 nm/DEG C-0.1 nm/DEG C, therefore, when the laser is used for providing incident light for an optical combiner, the wavelength of the light emitted by the laser possibly changes due to the change of the temperature and exceeds the transmission wavelength range of a filter of the optical combiner, and the light emitting device cannot normally work.
Two common solutions exist, one is to use the emission wavelength at CWDM wavelength, since the wavelength spacing between channels is 20nm and the single channel bandwidth is 13nm, theoretically covering temperature variations in the range of about 130 ℃ if the effect of temperature variations on the device, such as laser threshold, slope efficiency, etc., is not taken into account. Another way is to use the LWDM wavelength while temperature controlling the laser. A BOX packaging mode is mostly adopted in the multichannel multi-wavelength optical device, two common WDM wavelengths are LWDM and CWDM, the wavelength spacing of the CWDM is 20nm, the channel spacing of the LWDM is 800GHz, and the wavelength spacing is about 4.5 nm. An increase in the channel spacing may allow for a greater range of wavelengths. The operating wavelength of the laser fluctuates with temperature, typically at a rate of about 0.1 nm/degree. The single-channel operating bandwidth of CWDM is ± 6.5nm, theoretically corresponding to a range of 130 ℃, just enough to include the operating temperature range. However, the central wavelength of the laser is deviated, and the characteristics of the laser change under high and low temperature conditions, so that the manufacture of a multi-channel device in the whole temperature range is very difficult.
Accordingly, it is desirable to provide a light emitting device that can be applied to super-industrial temperature environments.
Disclosure of Invention
An object of this application is to provide a light emission device who is applied to super worker's warm environment can work under super worker's warm environment, solves the light emission device needs of super worker's warm environment application.
The purpose of the application is realized by adopting the following technical scheme:
the application provides a light emitting device applied to a super-working temperature environment, wherein the light emitting device comprises a T EC temperature controller, a laser array, a lens array, an optical combiner, a lens and a thermistor; the TEC temperature controller is provided with a first face and a second face which are opposite, and the first face of the TEC temperature controller is at a constant temperature; the laser array, the lens array, the optical combiner, the lens and the thermistor are arranged on the first surface of the TEC temperature controller, and the laser array, the lens array, the optical combiner and the lens are sequentially arranged; the light emitted by the laser array is emitted after passing through the lens array, the optical combiner and the lens; the thermistor is close to the laser array, and the thermistor is electrically connected with the TEC temperature controller. This technical scheme's beneficial effect lies in, place a plurality of photoelectric element on the TEC temperature controller, along with ambient temperature's change, find out the first face temperature of TEC through thermistor, make the first face temperature of TEC temperature controller maintain a constant temperature, guarantee that the photoelectric element on the first face of TEC temperature controller is located a constant temperature, under super worker temperature environment, can make temperature-sensitive elements such as laser instrument keep operating temperature stable unchangeable, provide a constant operating temperature for photoelectric element from this, solve the light emitting device needs of super worker temperature environment application.
In some alternative embodiments, the laser array includes one or more distributed bragg grating structured semiconductor lasers. The technical scheme has the advantages that the Bragg grating is taken as a frequency selection element to be introduced into the internal structure of the semiconductor laser, so that the semiconductor laser output with narrow line width and stable wavelength can be realized, and the wavelength tunable and dual-wavelength output of the semiconductor laser can be realized by utilizing the built-in Bragg grating.
In some optional embodiments, the laser array includes first to nth semiconductor lasers arranged in sequence, the lens array includes first to nth lenses arranged in sequence, the optical combiner is an N-up optical combiner, N is a positive integer; and the light with the kth wavelength emitted by the kth semiconductor laser enters the optical wave combiner after passing through the kth lens, wherein k is a positive integer not larger than N. The technical scheme has the beneficial effects that the wave combination effect of light with various wavelengths is realized through the plurality of semiconductor lasers, the plurality of lenses and the optical wave combiner.
In some alternative embodiments, N-4. The technical scheme has the beneficial effect that in a practical application, the number of the semiconductor lasers in the laser array and the number of the lenses in the lens array can be both 4.
In some alternative embodiments, the lens is close to an extension of an optical path of the nth semiconductor laser device emitting light of the nth wavelength. The technical scheme has the beneficial effects that the light path of the light incident lens after wave combination is close to the extension line of the light path of the light with the Nth wavelength emitted by the Nth semiconductor laser.
In some alternative embodiments, the thermistor is close to a side of the nth semiconductor laser device remote from the first semiconductor laser device. The technical scheme has the beneficial effects that the thermistor is arranged at the position close to the Nth semiconductor laser, so that the layout of the photoelectric element on the TEC temperature controller is more uniform and reasonable.
In some optional embodiments, the optical emitting device further comprises an optical isolator located in the optical path between the optical combiner and the lens. The technical scheme has the advantages that due to the fact that certain light reflection exists in the light transmission line, work of the high-speed modulation laser can be deteriorated, the optical isolator is introduced into the light emitting device, unidirectional transmission of light beams can be guaranteed, large loss is introduced to reflected light signals, and the normal working state of the laser is guaranteed.
In some optional embodiments, the light emitting device further includes a package housing, and the TEC temperature controller, the laser array, the lens array, the optical combiner, the lens, and the thermistor are disposed inside the package housing. The beneficial effects of this technical scheme lie in, through encapsulating the casing with photoelectric element encapsulation inside the casing, provide the protection for photoelectric element, prevent that high temperature and high humidity's environment from causing the damage to photoelectric element.
In some alternative embodiments, the super working temperature environment is in the range of-55 ℃ to 100 ℃. The technical scheme has the beneficial effect that the light emitting device can normally work in the temperature environment of-55-100 ℃ through a great deal of practice of the inventor.
In some alternative embodiments, the super working warm environment is at a temperature in the range of-45 ℃ to 95 ℃. The technical scheme has the beneficial effects that the light emitting device has excellent working performance under the temperature environment of minus 45 ℃ to 95 ℃ through a great deal of practice of the inventor.
Drawings
The present application is further described below with reference to the drawings and examples.
Fig. 1 is a schematic structural diagram of a light emitting device applied to a super-working temperature environment according to an embodiment of the present disclosure.
Detailed Description
The present application is further described with reference to the accompanying drawings and the detailed description, and it should be noted that, in the present application, the embodiments or technical features described below may be arbitrarily combined to form a new embodiment without conflict.
Referring to fig. 1, the present application provides a light emitting device applied to a super working temperature environment, the light emitting device including a TEC thermostat 101, a laser array 102, a lens array 103, an optical combiner 104, a lens 105, and a thermistor 106.
The TEC temperature controller 101 has a first side and a second side opposite to each other, and the first side of the TEC temperature controller 101 is at a constant temperature. The TEC (Thermo Electric Cooler) temperature controller refers to a semiconductor Cooler temperature controller, and is configured to provide a constant temperature, where the constant temperature may be a temperature value or a temperature range, and the temperature range is, for example, 0 ℃ to 70 ℃. The cold side and the hot side of the TEC temperature controller 101 are not defined fixedly, for example, when the outside is a high temperature environment, the first side is the cold side, and the second side is the hot side, and when the outside is a low temperature environment, the first side is the hot side, and the second side is the cold side.
The laser array 102, the lens array 103, the optical combiner 104, the lens 105, and the thermistor 106 are disposed on a first surface of the TEC thermostat 101. The TEC temperature controller 101 can ensure that the temperature of each photoelectric element of the light emitting device is maintained at a uniform temperature in an over-working temperature environment, and the performance of the device is not affected by the environment.
The laser array 102, the lens array 103, the optical combiner 104, and the lens 105 are sequentially arranged, and light emitted from the laser array 102 is emitted after passing through the lens array 103, the optical combiner 104, and the lens 105. The thermistor 106 is close to the laser array 102, and the thermistor 106 is electrically connected with the TEC thermostat 101.
In a special application environment, especially in a super-working temperature environment, the performance of the light emitting device changes along with the change of temperature, such as working wavelength, chip noise current and the like. Conventional wavelength selection or device design cannot meet the requirements of devices with over-working temperature. By using the TEC temperature controller 101, all the optoelectronic devices are maintained at a uniform temperature, especially in an extremely severe environment, so that each optoelectronic device in the light emitting device, for example, the optical combiner 104, is at a constant temperature, and thus the operating temperature thereof does not change with the external temperature, thereby ensuring the performance of the light emitting device. Therefore, a plurality of photoelectric elements are placed on the TEC temperature controller 101, along with the change of the ambient temperature, the temperature of the first surface of the TEC temperature controller 101 is detected through the thermistor 106, the temperature of the first surface of the TEC temperature controller 101 is kept at a constant temperature, the photoelectric elements on the first surface of the TEC temperature controller 101 are guaranteed to be located at a constant temperature, and under the environment with the working temperature exceeding, temperature sensitive elements such as a laser and the like can be enabled to keep the working temperature stable and unchanged, so that a constant working temperature is provided for the photoelectric elements, and the requirement of a light emitting device in the application field of the environment with the working temperature exceeding is met.
In some alternative embodiments, the laser array 102 may include one or more distributed bragg grating structured semiconductor lasers. The directly modulated laser usually uses a laser with a distributed bragg grating structure, and only one single wavelength exists during working, so that the laser is very suitable for modulating the working state of high-speed optical signals. Therefore, the Bragg grating is introduced into the internal structure of the semiconductor laser as a frequency selection element, so that the semiconductor laser output with narrow line width and stable wavelength can be realized, and the wavelength tuning and dual-wavelength output of the semiconductor laser can be realized by utilizing the built-in Bragg grating. The semiconductor laser of the distributed bragg grating structure includes a distributed feedback semiconductor laser (DFB-LD) and a distributed bragg reflector semiconductor laser (DBR-LD) according to the operation mechanism of the built-in bragg grating, and both of the semiconductor lasers can be applied to the light emitting device of the embodiment of the present application.
In some alternative embodiments, the laser array 102 may include a first semiconductor laser to an nth semiconductor laser sequentially arranged, the lens array 103 includes a first lens to an nth lens sequentially arranged, the optical combiner 104 is an N-up optical combiner, N is a positive integer; the light with the kth wavelength emitted by the kth semiconductor laser enters the optical combiner 104 after passing through the kth lens, and k is a positive integer not greater than N. Thereby, the plurality of semiconductor lasers, the plurality of lenses, and the optical combiner 104 realize a combining effect of light of a plurality of wavelengths. The optical combiner 104 can combine the light of N wavelengths into one beam.
In some alternative embodiments, N-4. The number of semiconductor lasers in the laser array 102 and the number of lenses in the lens array 103 may both be 4.
In some alternative embodiments, the lens 105 may be close to an extension of an optical path of the nth semiconductor laser emitting light of the nth wavelength. Thus, the optical path of the combined light incident on the lens 105 is close to the extension of the optical path of the light emitted by the nth semiconductor laser at the nth wavelength.
In some alternative embodiments, the thermistor 106 may be located near a side of the nth semiconductor laser away from the first semiconductor laser. Therefore, the thermistor 106 is arranged at a position close to the nth semiconductor laser, so that the layout of the photoelectric element on the TEC temperature controller 101 is more uniform and reasonable.
In some optional embodiments, the optical emitting device may further include an optical isolator 107, and the optical isolator 107 is located on an optical path between the optical combiner 104 and the lens 105. Because certain light reflection exists in the light transmission route, the work of the high-speed modulation laser can be deteriorated, so that the optical isolator 107 is introduced into the light emitting device, the unidirectional transmission of light beams can be ensured, the larger loss is introduced to reflected light signals, and the normal working state of the laser is ensured.
In some optional embodiments, the light emitting device may further include a package housing (not shown), and the TEC thermostat 101, the laser array 102, the lens array 103, the optical combiner 104, the lens 105, and the thermistor 106 are disposed inside the package housing. Therefore, the photoelectric element is packaged in the shell through the packaging shell, the protection is provided for the photoelectric element, and the photoelectric element is prevented from being damaged by a high-temperature and high-humidity environment. Generally, the package housing is air-tight.
In some alternative embodiments, the super working temperature environment is in the range of-55 ℃ to 100 ℃. Through a great deal of practice of the inventor, the light emitting device can normally work in the temperature environment of-55-100 ℃.
In some alternative embodiments, the super working warm environment is at a temperature in the range of-45 ℃ to 95 ℃. The light emitting device has excellent working performance under the temperature environment of minus 45 ℃ to 95 ℃ through a great deal of practice of the inventor.
The foregoing description and drawings are only for purposes of illustrating the preferred embodiments of the present application and are not intended to limit the present application, which is, therefore, to the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the present application.
Claims (10)
1. The light emitting device applied to the super working temperature environment is characterized by comprising a TEC temperature controller, a laser array, a lens array, an optical combiner, a lens and a thermistor;
the TEC temperature controller is provided with a first face and a second face which are opposite, and the first face of the TEC temperature controller is at a constant temperature;
the laser array, the lens array, the optical combiner, the lens and the thermistor are arranged on the first surface of the TEC temperature controller, and the laser array, the lens array, the optical combiner and the lens are sequentially arranged;
the light emitted by the laser array is emitted after passing through the lens array, the optical combiner and the lens;
the thermistor is close to the laser array, and the thermistor is electrically connected with the TEC temperature controller.
2. The light emitting device for use in super-engineered warm environments as in claim 1, wherein said laser array comprises one or more distributed bragg grating structured semiconductor lasers.
3. The light emitting device applied to the super working temperature environment as claimed in claim 1, wherein the laser array comprises a first semiconductor laser to an nth semiconductor laser sequentially arranged, the lens array comprises a first lens to an nth lens sequentially arranged, the optical combiner is an N-up optical combiner, N is a positive integer;
and the light with the kth wavelength emitted by the kth semiconductor laser enters the optical wave combiner after passing through the kth lens, wherein k is a positive integer not larger than N.
4. The light emitting device for use in super industrial temperature environments as claimed in claim 3, wherein N-4.
5. The light emitting device for super industrial temperature environment as claimed in claim 3, wherein the lens is close to the extension line of the optical path of the light emitted by the Nth semiconductor laser at the Nth wavelength.
6. The light emitting device for application in a super ambient temperature environment as claimed in claim 5, wherein said thermistor is located close to a side of said Nth semiconductor laser remote from said first semiconductor laser.
7. The light emitting device for use in over-temperature environments as claimed in claim 5, further comprising an optical isolator positioned in the optical path between the optical combiner and the lens.
8. The light emitting device for use in super working temperature environments as claimed in claim 1, further comprising a package housing, wherein the TEC thermostat, the laser array, the lens array, the optical combiner, the lens, and the thermistor are disposed inside the package housing.
9. The light emitting device for use in a super ambient temperature environment as claimed in claim 1, wherein the super ambient temperature is in the range of-55 ℃ to 100 ℃.
10. The light emitting device for use in a super ambient temperature environment as claimed in claim 9, wherein the super ambient temperature is in the range of-45 ℃ to 95 ℃.
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| CN202022592460.1U CN213659027U (en) | 2020-11-10 | 2020-11-10 | Light emitting device applied to super-working temperature environment |
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| CN202022592460.1U CN213659027U (en) | 2020-11-10 | 2020-11-10 | Light emitting device applied to super-working temperature environment |
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