CN213581431U

CN213581431U - Chip of planar optical waveguide type amplifier

Info

Publication number: CN213581431U
Application number: CN202022726264.9U
Authority: CN
Inventors: 郑伟伟; 程鹏; 赵懋; 林志明; 王辉
Original assignee: Changzhou Optical Core Integrated Optics Co ltd
Current assignee: Changzhou Optical Core Integrated Optics Co ltd
Priority date: 2020-11-23
Filing date: 2020-11-23
Publication date: 2021-06-29
Anticipated expiration: 2030-11-23

Abstract

The utility model relates to a chip of planar optical waveguide type amplifier belongs to integrated optics technical field. Including two identical upper chip and lower chip, it is fixed with mutual symmetry gluing between the chip to go up the chip, go up the chip and all follow outer cladding, inner cladding and sandwich layer from interior to interior in proper order with lower chip, sandwich layer and inner cladding are concentric semi-cylindrical structure, and the sandwich layer inlays and establishes in the inner cladding inner core, the outer cladding is the cuboid structure, the cladding is on the inner cladding surface.

Description

Chip of planar optical waveguide type amplifier

Technical Field

The utility model relates to a chip of planar optical waveguide type amplifier belongs to integrated optics technical field.

Background

At present, with the rapid development of optical fiber networks and integrated optics, the demand for integration of optical functional modules is prominent. The light source, the optical active module and the optical passive module are integrated into more and more scenes for application.

In the transmission and processing of optical signals, the attenuation of light cannot be avoided, and in order to ensure the intensity of the optical signals, the function of optical amplification must be considered in the optoelectronic system. Therefore, the integration of functional modules for optical amplification is also one of the important directions for the development of future integrated optics. The conventional optical amplifier is made of optical fiber, and the structure is suitable for an optical fiber system, but is not beneficial to the integration of an integrated optical system, so that the development of a planar waveguide type optical amplifier is particularly important.

The main problem of the planar waveguide type optical amplifier is that the device size is small, and it is necessary to realize large optical excitation in a small range to realize sufficient gain. The traditional method couples the signal light and the pump light into the same optical waveguide for pumping, and the amplification effect is not ideal.

In view of the above-mentioned drawbacks, the present inventors have made active research and innovation to create a chip of a planar optical waveguide amplifier, which has industrial application value.

Disclosure of Invention

To solve the above technical problem, an object of the present invention is to provide a chip of a planar lightwave circuit amplifier. The light with short wavelength of the chip of the planar optical waveguide type amplifier of the utility model can excite the light with long wavelength in the erbium-doped glass, and the light is repeatedly reflected in the waveguide, thereby realizing the function of the amplifier.

The utility model discloses a chip of planar optical waveguide type amplifier, including two identical upper chips and lower chip, it is fixed with mutual glued of symmetry between the lower chip to go up the chip, upper chip and lower chip all follow outer surrounding layer, inner cladding and sandwich layer including in proper order to interior from outer, sandwich layer and inner cladding are endocentric semi-cylindrical structure, and the sandwich layer inlays to be established in the inner cladding inner core, the surrounding layer is the cuboid structure, the surrounding layer cladding is on the inner cladding surface.

Furthermore, the height of the chip is 1.7-2.6 mm, and the width of the chip is 2.0-4.0 mm.

Furthermore, the inner cladding layer is made of glass containing silver ions through ion exchange.

Furthermore, the core layer is made of erbium-doped glass.

Furthermore, the diameter of the core layer is 6-10 microns.

Furthermore, the diameter of the inner cladding is 50-200 μm.

Further, the refractive index n1 of the core layer, the refractive index n2 of the inner cladding layer and the refractive index n3 of the outer cladding layer are shown, wherein n1> n2> n 3.

By the scheme, the invention at least has the following advantages:

the utility model discloses a planar optical waveguide type amplifier's chip pumping is efficient, and simple structure is stable, and is small, and the temperature dependence loss is little, has wide application prospect.

The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood and to be implemented in accordance with the content of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate a certain embodiment of the present invention, and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

Fig. 1 is a schematic structural diagram of a chip of a planar optical waveguide amplifier according to the present invention;

FIG. 2 is a schematic structural view of example 1 of the present invention;

fig. 3 is a schematic structural view of example 2 of the present invention;

fig. 4 is a schematic structural view of example 3 of the present invention;

fig. 5 is a schematic structural view of example 4 of the present invention;

wherein, in the figure;

1. mounting a chip; 2. chip unloading; 11. an outer cladding; 12. an inner cladding; 13. a core layer.

Detailed Description

The following detailed description of the embodiments of the present invention is provided with reference to the accompanying drawings and examples. The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention.

Example 1

As shown in fig. 2, in the chip of a planar lightwave circuit amplifier, the diameter of the inner cladding 12 is 50 μm, and the diameter of the core layer 13 is 6 μm.

An outer cladding 11 of a material suitable for ion-exchanged optical glass having a refractive index n 3; the inner cladding 12 is made of ion-exchanged glass containing silver ions and has a refractive index of n 2; the core layer 13 is made of erbium-doped glass and has a refractive index of n 1;

firstly, manufacturing an ion exchange inner cladding layer 12 on the upper surfaces of two chip chips, then etching a semi-cylindrical groove with the diameter of 6 microns at the central position of the ion exchange inner cladding layer 12 by a laser etching or physical etching method, then embedding an erbium-doped glass material as a core layer 13 at the position, and finally bonding the two chip chips together by optical glue, wherein the core layers 13 are aligned;

the refractive index of the outer cladding 11, the inner cladding 12 and the core 13 are related as follows: n3< n2< n 1.

Example 2

As shown in fig. 3, in the chip of a planar lightwave circuit amplifier, the diameter of the inner cladding 12 is 62.5 μm, and the diameter of the core layer 13 is 8 μm.

firstly, manufacturing an ion exchange inner cladding layer 12 on the upper surfaces of two chip chips, then etching a semi-cylindrical groove with the diameter of 8 microns at the central position of the ion exchange inner cladding layer 12 by a laser etching or physical etching method, then embedding an erbium-doped glass material as a core layer 13 at the position, and finally bonding the two chip chips together by optical glue, wherein the core layers 13 are aligned;

the refractive index of the outer cladding 11, the inner cladding 12 and the core 13 are related as follows: n3< n2< n 1;

the height of the chip is 1.7-2.6 mm, and the width is 2.0-4.0 mm.

Example 3

As shown in fig. 4, in the chip of a planar lightwave circuit amplifier, the diameter of the inner cladding 12 is 105 μm, and the diameter of the core layer 13 is 9 μm.

firstly, manufacturing an ion exchange inner cladding layer 12 on the upper surfaces of two chip chips, then etching a semi-cylindrical groove with the diameter of 9 microns at the central position of the ion exchange inner cladding layer 12 by a laser etching or physical etching method, then embedding an erbium-doped glass material as a core layer 13 at the position, and finally bonding the two chip chips together by optical glue, wherein the core layers 13 are aligned;

Example 4

As shown in fig. 5, in the chip of a planar lightwave circuit amplifier, the diameter of the inner cladding 12 is 200 μm, and the diameter of the core layer 13 is 10 μm.

firstly, manufacturing an ion exchange inner cladding layer 12 on the upper surfaces of two chip chips, then etching a semi-cylindrical groove with the diameter of 10 microns at the central position of the ion exchange inner cladding layer 12 by a laser etching or physical etching method, then embedding an erbium-doped glass material as a core layer 13 at the position, and finally bonding the two chip chips together by optical glue, wherein the core layers 13 are aligned;

The points to be finally explained are: first, in the description of the present application, it should be noted that, unless otherwise specified and limited, the terms "mounted," "connected," and "connected" should be understood broadly, and may be a mechanical connection or an electrical connection, or a communication between two elements, and may be a direct connection, and "upper," "lower," "left," and "right" are only used to indicate a relative positional relationship, and when the absolute position of the object to be described is changed, the relative positional relationship may be changed;

secondly, the method comprises the following steps: in the drawings of the disclosed embodiments of the present invention, only the structures related to the disclosed embodiments are referred to, and other structures can refer to the common design, and under the condition of no conflict, the same embodiment and different embodiments of the present invention can be combined with each other;

and finally: the above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and it should be noted that, for those skilled in the art, many modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.

Claims

1. A chip of a planar lightwave circuit amplifier comprising two identical upper (1) and lower (2) chips, characterized in that: go up chip (1) and chip (2) down and all include surrounding layer (11), inner cladding (12) and sandwich layer (13) from outer to interior in proper order, sandwich layer (13) and inner cladding (12) are concentric semi-cylindrical structure, and sandwich layer (13) inlays and establishes in inner cladding (12) inner core, surrounding layer (11) are the cuboid structure, surrounding layer (11) cladding is on inner cladding (12) surface.

2. The chip of a planar lightwave circuit amplifier of claim 1, wherein: the upper chip (1) and the lower chip (2) are symmetrically glued and fixed with each other.

3. The chip of a planar lightwave circuit amplifier of claim 1, wherein: the height of the chip is 1.7-2.6 mm, and the width is 2.0-4.0 mm.

4. The chip of a planar lightwave circuit amplifier of claim 1, wherein: the inner cladding (12) is made of glass containing silver ions through ion exchange.

5. The chip of a planar lightwave circuit amplifier of claim 1, wherein: the core layer (13) is made of erbium-doped glass.

6. The chip of a planar lightwave circuit amplifier of claim 1, wherein: the diameter of the core layer (13) is 6-10 mu m.

7. The chip of a planar lightwave circuit amplifier of claim 1, wherein: the diameter of the inner cladding (12) is 50-200 mu m.

8. The chip of a planar lightwave circuit amplifier of claim 1, wherein: the refractive index n1 of the core layer (13), the refractive index n2 of the inner cladding layer (12) and the refractive index n3 of the outer cladding layer (11), wherein n1> n2> n 3.