CN213515692U - Novel Hall sensor chip - Google Patents
Novel Hall sensor chip Download PDFInfo
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- CN213515692U CN213515692U CN202020405201.0U CN202020405201U CN213515692U CN 213515692 U CN213515692 U CN 213515692U CN 202020405201 U CN202020405201 U CN 202020405201U CN 213515692 U CN213515692 U CN 213515692U
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Abstract
The utility model relates to an integrated circuit technical field specifically is a novel hall sensor chip, including input voltage port and two output ports, still include voltage regulator, amplifier circuit, output controller, hall element, amplifier circuit, schmidt trigger circuit and temperature compensation circuit, take voltage regulator respectively with output controller, hall element amplifier circuit schmidt trigger circuit respectively with temperature compensation circuit connects, hall element with amplifier circuit connects. In the scheme, the Schmidt Trigger circuit is a Schmidt Trigger circuit manufactured by a Hall sensor chip through a CMOS (complementary metal oxide semiconductor) process, can effectively reduce misoperation and enable output signals to be stable by adopting the Schmidt Trigger circuit, and the Amplifier circuit is an amplifying and filtering circuit manufactured by the Hall sensor chip through the CMOS process and used for amplifying voltage signals sensed by a Hall element, and can effectively filter interference signals through the CMOS process.
Description
Technical Field
The utility model relates to the technical field of integrated circuits, specifically be a novel hall sensor chip.
Background
The CMOS process is a mass production process generated on the premise of improving the integration level requirement of a chip along with the development of the times. The development of semiconductor manufacturing processes has led to the continuous decrease of the minimum line width of the CMOS process nowadays, which means that more circuits, especially digital processing circuits, can be integrated on the same area of the wafer. The Hall chip of the CMOS process can effectively control the deviation range of magnetic parameters by a built-in chopping amplification processing circuit, a dynamic offset elimination circuit and the like, has the greatest advantages of accurate magnetic switch action point, wide magnetic sensitivity selection range, temperature drift control and general voltage resistance of the chip due to the narrow line width, and can also be realized by a built-in temperature compensation circuit.
The Bipolar product has good electrical characteristics, including the capability of operating in a wide range of operating voltage environments, simple and efficient reverse voltage protection circuit design, and simultaneously has ESD protection and anti-electromagnetic interference capabilities. The disadvantages of the sensor are that the magnetic characteristics are general, including the consistency and symmetry of the magnetic opening point and the closing point of the sensor, and the magnetic parameter changes greatly along with the temperature change, namely the temperature drift is large.
SUMMERY OF THE UTILITY MODEL
Technical problem to be solved
Not enough to prior art, the utility model provides a novel hall sensor chip for the withstand voltage that improves hall sensor chip, the ESD ability, the interference killing feature has high sensitivity, the purpose of magnetic parameter uniformity simultaneously.
(II) technical scheme
In order to achieve the above object, the utility model provides a following technical scheme: a novel Hall sensor chip comprises an input voltage port and two output ports, and is characterized in that; the voltage regulator is respectively connected with the output controller, the Hall element, the amplifying circuit, the Schmitt trigger circuit and the temperature compensating circuit, the Hall element is connected with the amplifying circuit, the amplifying circuit is connected with the Schmitt trigger circuit, the temperature compensating circuit is connected with the Schmitt trigger circuit, the output controller is connected with two triodes, and the Die of the Bipolar technology of the voltage regulator and the output controller is electrically connected with the Die of the CMOS technology of the Hall element, the amplifying circuit, the Schmitt trigger circuit and the temperature compensating circuit.
(III) advantageous effects
The utility model provides a novel hall sensor chip. The method has the following beneficial effects:
1. die manufactured by the Bipolar process and Die manufactured by the CMOS process are integrated on the same chip in a routing mode, so that the voltage resistance and ESD (electro-static discharge) capability of the chip can be effectively improved, and the anti-interference capability can also be improved.
2. The CMOS process is adopted, the precision and the sensitivity of the chip can be ensured, the magnetic parameter offset is reduced, and the Temperature Compensation circuit is a Temperature Compensation circuit manufactured by the Hall sensor chip by utilizing the CMOS process and can effectively solve the Temperature drift phenomenon.
3. The Schmidt Trigger circuit is a Schmidt Trigger circuit manufactured by a Hall sensor chip by utilizing a CMOS process, can effectively reduce misoperation and enable an output signal to be stable by adopting the Schmidt Trigger circuit, the Amplifier circuit is an amplifying and filtering circuit manufactured by the Hall sensor chip by utilizing the CMOS process and is used for amplifying a voltage signal induced by a Hall element, and the CMOS process can effectively filter an interference signal.
4. The Hall Sensor circuit is a Hall element manufactured by a Hall Sensor chip by utilizing a CMOS process, generates voltage by sensing a magnetic signal, and the Hall Sensor chip of the Output Driver circuit is manufactured into an Output circuit by utilizing the characteristic of strong loading capacity of a Bipolar process, so that the loading capacity of the chip can be improved, and meanwhile, the Output port has high ESD capacity.
5. The Regular circuit is a voltage regulator circuit manufactured by a Hall sensor chip by utilizing the characteristics of high voltage resistance and high ESD (electro-static discharge) capability of a Bipolar process, so that the input voltage value of the chip can be greatly improved, and meanwhile, the input port has the high ESD capability.
Drawings
Fig. 1 is a schematic diagram of the hall sensor chip of the present invention.
In the figure:
FIG. 1 "regulated" is a voltage regulator circuit;
"Output" in fig. 1 is an Output controller circuit;
in FIG. 1, "Hall Sensor" in FIG. 1 is a Hall element;
in fig. 1, "Amplifier" is an amplifying circuit;
in fig. 1, "Schmidt Trigger" is a Schmidt Trigger circuit;
"Temperature Compensation" in FIG. 1 is a Temperature Compensation circuit;
in fig. 1, two triodes are connected to the output controller circuit.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
As shown in fig. 1, the utility model provides a technical solution: a novel Hall sensor chip comprises an input voltage port, two output ports, a voltage regulator, an amplifier circuit, an output controller, a Hall element, an amplifying circuit, a Schmitt trigger circuit and a temperature compensation circuit, the voltage regulator is respectively connected with the output controller, the Hall element, the amplifying circuit and the Schmitt trigger circuit are respectively connected with the temperature compensation circuit, the Hall element is connected with the amplifying circuit, the amplifying circuit is connected with the Schmitt trigger circuit, the temperature compensation circuit is connected with the Schmitt trigger circuit, the output controller is connected with the two triodes, and the Die of the Bipolar process of the voltage regulator and the output controller is electrically connected with the Die of the CMOS process of the Hall element, the amplifying circuit, the Schmitt trigger circuit and the temperature compensation circuit.
Specifically, the voltage regulator and the output controller are all manufactured by adopting a Bipolar process, and the hall element, the amplifier circuit, the schmitt trigger circuit and the temperature compensation circuit are all manufactured by adopting a CMOS process.
The voltage regulator is used for regulating input voltage to be suitable for a Hall element, an amplifying circuit and a Schmitt trigger circuit, the output controller outputs corresponding signals after being processed by the amplifying circuit and the Schmitt trigger circuit according to signals sensed by the Hall element, the Hall element is a Hall effect of a semiconductor material placed in a magnetic field and generates corresponding voltage signal output, the amplifying circuit filters and amplifies the voltage signals generated by the Hall element, the Schmitt trigger circuit processes electric signals after being amplified into high and low levels and reduces interference and misoperation, the Die of a Bipolar process of the integrated voltage regulator and the output controller is connected with the Die of a CMOS process of integrating the Hall element, the amplifier circuit, the Schmitt trigger circuit and the temperature compensation circuit in a routing mode, two different processes are integrated on a chip by means of electrical connection.
Die manufactured by the Bipolar process and Die manufactured by the CMOS process are integrated on the same chip in a routing mode, and the ports are all manufactured by the Bipolar process, so that the voltage resistance and the ESD (electro-static discharge) capability of the chip can be effectively improved, and the anti-interference capability can also be improved. The Hall element and signal processing part of the chip, adopt COMS craft, can guarantee the precision of the chip, the degree of sensitivity, reduce the magnetic parameter maladjustment, Temperature Compensation circuit that the Hall Sensor chip utilizes the Temperature compensating circuit that CMOS craft makes, can solve the Temperature drift phenomenon effectively, Schmidt Trigger circuit is Schmidt Trigger circuit that the Hall Sensor chip utilizes CMOS craft to make, use Schmidt Trigger circuit, can reduce the false action effectively, make the Output signal stable, Amplifier circuit is the amplifying filter circuit that the Hall Sensor chip utilizes CMOS craft makes, is used for amplifying the voltage signal that the Hall element is induced, CMOS craft can filter the interference signal effectively, Hall Sensor circuit is the Hall element that the Hall Sensor chip utilizes CMOS craft makes, produce the voltage through the induced magnetic signal, Hall Sensor chip utilizes the characteristic that the carrying capacity of Bipolar craft is strong, the output circuit is manufactured, so that the loading capacity of the chip can be improved, and meanwhile, the output port has the high ESD capacity.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a reference structure" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (1)
1. A novel Hall sensor chip comprises an input voltage port and two output ports, and is characterized in that; the voltage regulator is respectively connected with the output controller, the Hall element, the amplifying circuit, the Schmitt trigger circuit and the temperature compensating circuit, the Hall element is connected with the amplifying circuit, the amplifying circuit is connected with the Schmitt trigger circuit, the temperature compensating circuit is connected with the Schmitt trigger circuit, the output controller is connected with two triodes, and the Die of the Bipolar technology of the voltage regulator and the output controller is electrically connected with the Die of the CMOS technology of the Hall element, the amplifying circuit, the Schmitt trigger circuit and the temperature compensating circuit.
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CN202020405201.0U CN213515692U (en) | 2020-03-26 | 2020-03-26 | Novel Hall sensor chip |
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CN202020405201.0U CN213515692U (en) | 2020-03-26 | 2020-03-26 | Novel Hall sensor chip |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114113667A (en) * | 2021-12-07 | 2022-03-01 | 华东光电集成器件研究所 | Gear quadrature output speed measuring device based on Hall element |
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2020
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114113667A (en) * | 2021-12-07 | 2022-03-01 | 华东光电集成器件研究所 | Gear quadrature output speed measuring device based on Hall element |
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