CN213441534U - Heat-conducting silica gel patch for electronic device - Google Patents
Heat-conducting silica gel patch for electronic device Download PDFInfo
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- CN213441534U CN213441534U CN202022035592.4U CN202022035592U CN213441534U CN 213441534 U CN213441534 U CN 213441534U CN 202022035592 U CN202022035592 U CN 202022035592U CN 213441534 U CN213441534 U CN 213441534U
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Abstract
The utility model discloses a heat conduction silica gel paster for electronic device, include: the heat-conducting silicone adhesive comprises a first heat-conducting silicone layer, a second heat-conducting silicone layer and a polyimide layer positioned between the first heat-conducting silicone layer and the second heat-conducting silicone layer, wherein the surface of the second heat-conducting silicone layer opposite to the polyimide layer is provided with an aluminum foil layer, the surface of the first heat-conducting silicone layer opposite to the polyimide layer is provided with a heat-conducting adhesive layer, and a release film is in adhesive connection with the heat-conducting adhesive layer; a plurality of I-shaped through holes distributed at intervals are formed in the polyimide layer; the aluminum foil layer, the first heat-conducting silica gel layer, the polyimide layer, the second heat-conducting silica gel layer and the heat-conducting adhesive layer are provided with a plurality of through micro-holes at intervals. The utility model discloses heat conduction silica gel paster for electronic device has both improved stretch-proofing performance and insulating properties, has also increased the laminating fastness of heat conduction silica gel paster for electronic device, has realized the better radiating effect of heat conduction silica gel paster for electronic device.
Description
Technical Field
The utility model relates to an electronic equipment subsidiary heat dissipation technical field especially relates to a heat conduction silica gel paster for electronic device.
Background
With the miniaturization and high integration of integrated circuits, the packing density of electronic components continues to increase, providing powerful usage functions, while also leading to a dramatic increase in the operating power consumption and heat generation thereof. High temperatures can have detrimental effects on the stability, reliability and lifetime of electronic components, such as excessive temperatures that can compromise semiconductor junctions, damage the circuit connection interfaces, increase the resistance of the conductors and cause mechanical stress damage. The reliability of the communication device or the electronic component is reduced by 50 percent for each 10 ℃ rise of the working temperature. Therefore, in order to ensure high reliability while the device exhibits optimum performance, it is necessary to ensure that the heat generated by the heat-generating electronic component can be discharged in time.
Disclosure of Invention
The utility model aims at providing a heat conduction silica gel paster for electronic device, this heat conduction silica gel paster for electronic device have both improved stretch-proofing performance and insulating properties, have also increased the laminating fastness of heat conduction silica gel paster for electronic device, have realized the better radiating effect of heat conduction silica gel paster for electronic device.
In order to achieve the above purpose, the utility model adopts the technical scheme that: a thermally conductive silicone patch for an electronic device, comprising: the heat-conducting silicone adhesive comprises a first heat-conducting silicone layer, a second heat-conducting silicone layer and a polyimide layer positioned between the first heat-conducting silicone layer and the second heat-conducting silicone layer, wherein the surface of the second heat-conducting silicone layer opposite to the polyimide layer is provided with an aluminum foil layer, the surface of the first heat-conducting silicone layer opposite to the polyimide layer is provided with a heat-conducting adhesive layer, and a release film is in adhesive connection with the heat-conducting adhesive layer; a plurality of I-shaped through holes distributed at intervals are formed in the polyimide layer, and the interval between every two adjacent I-shaped through holes is 6-12 mm; the aluminum foil layer, the first heat-conducting silica gel layer, the polyimide layer, the second heat-conducting silica gel layer and the heat-conducting adhesive layer are provided with a plurality of through micro-holes at intervals.
1. In the above scheme, the respective thickness of the first heat-conducting silica gel layer and the second heat-conducting silica gel layer is 1-3 mm.
2. In the scheme, the thickness of the polyimide layer is 40-60 mu m.
3. In the scheme, the diameter of the micro through hole is 0.1-0.3 mm.
4. In the above scheme, the substrate layer of the release film is a polyester film, a polypropylene film, a polyethylene film or a fluorine-resistant nylon film.
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage:
1. the utility model discloses heat conduction silica gel paster for electronic device, it is located being provided with the polyimide layer between first heat conduction silica gel layer and the second heat conduction silica gel layer, it has a plurality of interval distribution's I-shaped through-hole to open on the polyimide layer, interval between the adjacent I-shaped through-hole is 6~12 mm, stretch-proofing performance and insulating properties have both been improved, first heat conduction silica gel layer has also been strengthened, cohesion between the second heat conduction silica gel layer, layering phenomenon in the use has been avoided, the better radiating effect of heat conduction silica gel paster for electronic device has been realized.
2. The utility model discloses heat conduction silica gel paster for electronic device, its aluminium foil layer, first heat conduction silica gel layer, polyimide layer, second heat conduction silica gel layer and heat conduction gluing layer are provided with a plurality of through-holes that link up at intervals for when insulating gasket laminating, insulating gasket and electronic device bubble can be escaped by the through-hole, have increased the laminating fastness of heat conduction silica gel paster for electronic device; in addition, the surface of the second heat conduction silica gel layer, which is back to the polyimide layer, is provided with an aluminum foil layer, so that the heat expansion and the shielding performance improvement are further facilitated, and the safety performance of the electronic component is improved.
Drawings
FIG. 1 is a schematic structural view of a heat-conductive silicone patch for an electronic device according to the present invention;
fig. 2 is a partial schematic view of fig. 1.
In the above drawings: 1. a first heat-conducting silica gel layer; 2. a second heat-conducting silica gel layer; 3. a polyimide layer; 4. an aluminum foil layer; 5. a thermally conductive adhesive layer; 6. a release film; 7. an I-shaped through hole; 8. and (4) micro through holes.
Detailed Description
Example 1: a thermally conductive silicone patch for an electronic device, comprising: the heat-conducting silicone adhesive comprises a first heat-conducting silicone layer 1, a second heat-conducting silicone layer 2 and a polyimide layer 3 positioned between the first heat-conducting silicone layer 1 and the second heat-conducting silicone layer 2, wherein the surface of the second heat-conducting silicone layer 2 opposite to the polyimide layer 3 is provided with an aluminum foil layer 4, the surface of the first heat-conducting silicone layer 1 opposite to the polyimide layer 3 is provided with a heat-conducting adhesive layer 5, and a release film 6 is in adhesive connection with the heat-conducting adhesive layer 5; a plurality of I-shaped through holes 7 distributed at intervals are formed in the polyimide layer 3, and the interval between every two adjacent I-shaped through holes 7 is 6-12 mm; the aluminum foil layer 4, the first heat-conducting silica gel layer 1, the polyimide layer 3, the second heat-conducting silica gel layer 2 and the heat-conducting adhesive layer 5 are provided with a plurality of through micro-holes 8 at intervals.
The thickness of each of the first heat-conducting silica gel layer 1 and the second heat-conducting silica gel layer 2 is 1.8 mm.
The thickness of the polyimide layer 3 was 52 μm, and the diameter of the micro-via hole 8 was 0.16 mm.
Example 2: a thermally conductive silicone patch for an electronic device, comprising: the heat-conducting silicone adhesive comprises a first heat-conducting silicone layer 1, a second heat-conducting silicone layer 2 and a polyimide layer 3 positioned between the first heat-conducting silicone layer 1 and the second heat-conducting silicone layer 2, wherein the surface of the second heat-conducting silicone layer 2 opposite to the polyimide layer 3 is provided with an aluminum foil layer 4, the surface of the first heat-conducting silicone layer 1 opposite to the polyimide layer 3 is provided with a heat-conducting adhesive layer 5, and a release film 6 is in adhesive connection with the heat-conducting adhesive layer 5; a plurality of I-shaped through holes 7 distributed at intervals are formed in the polyimide layer 3, and the interval between every two adjacent I-shaped through holes 7 is 6-12 mm; the aluminum foil layer 4, the first heat-conducting silica gel layer 1, the polyimide layer 3, the second heat-conducting silica gel layer 2 and the heat-conducting adhesive layer 5 are provided with a plurality of through micro-holes 8 at intervals.
The thickness of each of the first heat-conducting silica gel layer 1 and the second heat-conducting silica gel layer 2 is 2.2 mm.
The thickness of the polyimide layer 3 was 48 μm, and the diameter of the micro-via hole 8 was 0.22 mm.
When the heat-conducting silica gel patch for the electronic device is adopted, the polyimide layer is arranged between the first heat-conducting silica gel layer and the second heat-conducting silica gel layer, the polyimide layer is provided with a plurality of I-shaped through holes distributed at intervals, and the interval between the adjacent I-shaped through holes is 6-12 mm, so that the tensile resistance and the insulating property are improved, the binding force between the first heat-conducting silica gel layer and the second heat-conducting silica gel layer is enhanced, the layering phenomenon in use is avoided, and the better heat dissipation effect of the heat-conducting silica gel patch for the electronic device is realized; in addition, the surface of the second heat-conducting silica gel layer, which is opposite to the polyimide layer, is provided with an aluminum foil layer, so that the heat expansion is further facilitated, the shielding performance is improved, and the safety performance of the electronic component is improved; in addition, a plurality of through micro-through holes are formed in the aluminum foil layer, the first heat-conducting silica gel layer, the polyimide layer, the second heat-conducting silica gel layer and the heat-conducting adhesive layer at intervals, so that when the insulating gasket is attached, bubbles of the insulating gasket and the electronic device can escape from the micro-through holes, and the attachment fastness of the heat-conducting silica gel patch for the electronic device is improved.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (5)
1. The utility model provides a heat conduction silica gel paster for electron device which characterized in that: the method comprises the following steps: the heat-conducting silicone adhesive comprises a first heat-conducting silicone layer (1), a second heat-conducting silicone layer (2) and a polyimide layer (3) positioned between the first heat-conducting silicone layer (1) and the second heat-conducting silicone layer (2), wherein the surface of the second heat-conducting silicone layer (2) opposite to the polyimide layer (3) is provided with an aluminum foil layer (4), the surface of the first heat-conducting silicone layer (1) opposite to the polyimide layer (3) is provided with a heat-conducting adhesive layer (5), and a release film (6) is in adhesive connection with the heat-conducting adhesive layer (5); a plurality of I-shaped through holes (7) distributed at intervals are formed in the polyimide layer (3), and the interval between every two adjacent I-shaped through holes (7) is 6-12 mm; the aluminum foil layer (4), the first heat-conducting silica gel layer (1), the polyimide layer (3), the second heat-conducting silica gel layer (2) and the heat-conducting adhesive layer (5) are provided with a plurality of through micro-through holes (8) at intervals.
2. A heat conductive silicone patch for electronic devices according to claim 1, wherein: the respective thickness of first heat conduction silica gel layer (1), second heat conduction silica gel layer (2) is 1~3 mm.
3. A heat conductive silicone patch for electronic devices according to claim 1, wherein: the thickness of the polyimide layer (3) is 40-60 mu m.
4. A heat conductive silicone patch for electronic devices according to claim 1, wherein: the substrate layer (61) of the release film (6) is a polyester film, a polypropylene film, a polyethylene film or a fluorine-resistant nylon film.
5. The thermally conductive silicone patch for electronic devices according to claim 4, wherein: the diameter of the micro through hole (8) is 0.1-0.3 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022035592.4U CN213441534U (en) | 2020-09-17 | 2020-09-17 | Heat-conducting silica gel patch for electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022035592.4U CN213441534U (en) | 2020-09-17 | 2020-09-17 | Heat-conducting silica gel patch for electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213441534U true CN213441534U (en) | 2021-06-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022035592.4U Active CN213441534U (en) | 2020-09-17 | 2020-09-17 | Heat-conducting silica gel patch for electronic device |
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| Country | Link |
|---|---|
| CN (1) | CN213441534U (en) |
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2020
- 2020-09-17 CN CN202022035592.4U patent/CN213441534U/en active Active
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