CN213426122U - Novel power MOS module structure - Google Patents

Abstract

The utility model is suitable for a MOS module technical field provides a novel power MOS module structure, include: a plurality of MOS tube modules and a plurality of absorption circuits; the absorption circuit is connected and arranged between two adjacent MOS tube modules; two adjacent MOS tube modules are connected with each other; each MOS tube module group comprises a plurality of MOS tubes which are connected in series; each MOS tube is correspondingly connected with one absorption circuit; each MOS transistor module group is respectively connected with an external positive power supply, an external negative power supply and an external main power supply. The utility model discloses can improve the output of whole MOS module structure, and then strengthen the performance of whole MOS module structure.

Description

Novel power MOS module structure

Technical Field

The utility model belongs to the technical field of the MOS module, especially, relate to a novel power MOS module structure.

Background

With the development of electronic power technology, MOS transistors are increasingly widely used due to their advantages of good high-frequency performance, low switching loss, high output impedance, low driving power, and the like. The power MOS module is a module encapsulated by MOS tubes according to a certain functional combination, the power MOS module is usually used by matching with other external devices, the integration level of the existing power module is not high, the output power is small, the module utilization rate is low, more input and output terminals are provided, the structure is complex, the manufacturing volume of the power module is large, in the turn-off and turn-on processes of the power MOS module, the grid electrode of the MOS tube generates voltage spike pulse to damage the device, the power MOS module is easy to burn out, the normal work of the whole circuit is influenced, and the performance is poor. It can be seen that the existing MOS module structure has the problems of low power and poor performance.

SUMMERY OF THE UTILITY MODEL

An embodiment of the utility model provides a novel power MOS module structure aims at solving among the prior art MOS module structure power little, the poor problem of performance.

An embodiment of the utility model provides a novel power MOS module structure, include:

a plurality of MOS tube modules and a plurality of absorption circuits;

the absorption circuit is connected and arranged between two adjacent MOS tube modules;

two adjacent MOS tube modules are connected with each other;

each MOS tube module group comprises a plurality of MOS tubes which are connected in series;

each MOS tube is correspondingly connected with one absorption circuit;

each MOS transistor module group is respectively connected with an external positive power supply, an external negative power supply and an external main power supply.

Furthermore, the novel power MOS module structure further comprises a plurality of diodes, and each diode is reversely connected with one MOS tube in parallel.

Furthermore, the drain electrode of the first MOS tube in each group of MOS tube modules is connected with an external positive power supply, the source electrode of the last MOS tube in each group of MOS tube modules is connected with an external negative power supply, and the drain electrode of the middle MOS tube in each group of MOS tube modules is connected with an external main power supply.

Furthermore, the source electrode and the drain electrode of the adjacent MOS tube in the same MOS tube module are connected.

Furthermore, the sources of two corresponding MOS transistors in two adjacent MOS transistor modules are connected to each other.

Furthermore, the drain electrode, the source electrode and the grid electrode of each MOS tube are provided with external connecting ends.

Still further, the absorption circuit includes: the circuit comprises an absorption capacitor, a first resistor and a second resistor;

one end of the absorption capacitor is connected with the drain electrode of the corresponding MOS tube;

the other end of the absorption capacitor is connected with one end of the first resistor and one end of the second resistor respectively;

the other ends of the first resistor and the second resistor are connected with the source electrode of the corresponding MOS tube.

The utility model discloses the beneficial effect who reaches: guarantee that MOS module structure can output bigger power through setting up multiunit MOS pipe module. Simultaneously can absorb the high pressure that the MOS pipe switch in every group MOS pipe module produced in the twinkling of an eye through setting up a plurality of absorption circuits and avoid damaging the MOS pipe. And then can guarantee every MOS pipe in every group MOS pipe module, and then guarantee that whole MOS module structure can output bigger power, satisfy more powerful equipment work. The output power of the whole MOS module structure is improved, and the structural performance of the whole MOS module is further enhanced.

Drawings

Fig. 1 is a schematic structural diagram of a novel power MOS module structure according to an embodiment of the present invention;

fig. 2 is a circuit diagram of a novel power MOS module structure according to an embodiment of the present invention.

The method comprises the following steps of 1, an MOS tube module; 2. an absorption circuit; 3. an MOS tube; 4. a diode; 5. a capacitor; 6. A first resistor; 7. a second resistor.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

The embodiment of the utility model provides a guarantee that MOS module structure can output bigger power through setting up multiunit MOS pipe die group. Simultaneously can absorb the high pressure that the MOS pipe switch in every group MOS pipe module produced in the twinkling of an eye through setting up a plurality of absorption circuits and avoid damaging the MOS pipe. And then can guarantee every MOS pipe in every group MOS pipe module, and then guarantee that whole MOS module structure can output bigger power, satisfy more powerful equipment work. The output power of the whole MOS module structure is improved, and the structural performance of the whole MOS module is further enhanced.

As shown in fig. 1, fig. 1 is a schematic structural diagram of a novel power MOS module structure provided in an embodiment of the present invention.

The novel power MOS module structure comprises a plurality of groups of MOS tube modules 1 and a plurality of absorption circuits 2; the absorption circuit 2 is connected and arranged between the two adjacent MOS tube modules 1; two adjacent MOS tube modules 1 are connected with each other; each MOS tube module group 1 comprises a plurality of MOS tubes 3 connected in series; each MOS tube 3 is correspondingly connected with one absorption circuit 2; each group of MOS tube modules 1 is respectively connected with an external positive power supply V +, an external negative power supply V-and an external main power supply V0.

The utility model discloses an in the embodiment, still include a plurality of diodes 4, every diode 4 is a MOS pipe of reverse parallel connection. Therefore, the MOS tube 3 can be prevented from being broken down, and the effect of protecting the MOS tube 3 is achieved.

The utility model discloses an in the embodiment, the drain electrode of the first MOS pipe in every group MOS pipe module 1 all is connected with outside positive power supply V +, and the source electrode of the last MOS pipe in every group MOS pipe module 1 all is connected with outside negative power supply V-, and the drain electrode of the middle MOS pipe in every group MOS pipe module 1 all is connected with outside total power supply V0. Therefore, enough working power supply can be provided through the external positive power supply V +, the external negative power supply V and the external power supply, so that each group of MOS tube module 1 can obtain a stable working power supply, and the working stability of each group of MOS tube module 1 is ensured.

In an embodiment of the present invention, the source and the drain of the adjacent MOS transistor in the same MOS transistor module 1 are connected. Therefore, the MOS tubes in each group of MOS tube module 1 are connected in series and work together in a matched manner, and a stable working state is provided. Specifically, adjacent MOS transistors 3 are connected through integration. The circuit layout of each group of MOS tube module 1 is compact, the integration level is high, and larger power can be output.

The utility model discloses an in the embodiment, the source electrode interconnect of two MOS pipes that correspond in two sets of adjacent MOS pipe modules 1. Therefore, the connection and the matching work between the two adjacent groups of MOS tube modules 1 can be ensured.

The utility model discloses an in the embodiment, drain electrode, source electrode and grid of every MOS pipe 3 all are provided with external connection end. Thus, each MOS transistor 3 can provide an interface for connecting with other external circuits or devices, and ensure the connection relationship between the MOS transistor and the external circuits or devices.

In an embodiment of the present invention, the absorption circuit 2 includes: an absorption capacitor 5, a first resistor 6 and two first resistors 7; one end of the absorption capacitor 5 is connected with the drain electrode of the corresponding MOS tube 3; the other end of the absorption capacitor 5 is respectively connected with one end of the first resistor 6 and one end of the first resistor 7; the other ends of the first resistor 6 and the second resistor 7 are connected with the source electrode of the corresponding MOS tube 3. Specifically, the absorption capacitor 5, the first resistor 6 and the first and second resistors 7 are used for peak voltage of each MOS transistor 3, so as to prevent the MOS transistor 3 from entering avalanche breakdown and damaging the MOS transistor 3. More specifically, the absorption capacitor 5 makes the peak voltage edge become gentle, the voltage borne by the MOS transistor 3 is reduced in the same time, the generated avalanche energy is reduced, and the MOS transistor 3 is protected. The first resistor 6 and the two-one resistor 7 have the function of consuming certain overvoltage energy, and play a role of protecting the MOS tube 3 together with the absorption capacitor 5.

For example, as shown in fig. 2, fig. 2 is a circuit diagram of a novel power MOS module structure provided by an embodiment of the present invention. In fig. 2, two MOS transistor modules 1 are taken as an example, two MOS transistors 3 are taken as an example in series for each group, and four absorption circuits 2 are taken as an example.

Of course, the novel power MOS module structure may include three, four, five and so on groups of MOS transistor modules 1. Each MOS transistor module 1 can also be connected with three, four, five and so on MOS transistors in series, and correspondingly, the absorption circuits 2 can be correspondingly arranged according to the number of the MOS transistors 3.

In the embodiment of the invention, the MOS module structure can output higher power by arranging a plurality of groups of MOS tube modules 1. Simultaneously can absorb the high pressure that 3 switches of MOS pipe in every group MOS pipe module 1 produced in the twinkling of an eye through setting up a plurality of absorption circuit 2 and avoid damaging MOS pipe 3. And then can guarantee every MOS pipe 3 in every group MOS pipe module 1, and then guarantee that whole MOS module structure can output bigger power, satisfy more powerful equipment work. The output power of the whole MOS module structure is improved, and the structural performance of the whole MOS module is further enhanced.

The above description is only exemplary of the present invention and should not be construed as limiting the present invention, and any modifications, equivalents and improvements made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.

Claims (7)

1. A novel power MOS module structure, characterized in that includes: a plurality of MOS tube modules and a plurality of absorption circuits;

the absorption circuit is connected and arranged between two adjacent MOS tube modules;

two adjacent MOS tube modules are connected with each other;

each MOS tube module group comprises a plurality of MOS tubes which are connected in series;

each MOS tube is correspondingly connected with one absorption circuit;

each MOS transistor module group is respectively connected with an external positive power supply, an external negative power supply and an external main power supply.

2. The novel power MOS module structure of claim 1, further comprising a plurality of diodes, each diode connected in anti-parallel with a MOS transistor.

3. The novel power MOS module structure of claim 2, wherein the drain of the first MOS transistor in each MOS transistor module is connected to an external positive power supply, the source of the last MOS transistor in each MOS transistor module is connected to an external negative power supply, and the drain of the middle MOS transistor in each MOS transistor module is connected to an external main power supply.

4. The novel power MOS module structure of claim 1, wherein the source and drain of adjacent MOS transistors in the same MOS transistor module are connected.

5. The novel power MOS module structure of claim 1, wherein the sources of the corresponding two MOS transistors in the two adjacent MOS transistor modules are connected to each other.

6. The novel power MOS module structure of any one of claims 1-5, wherein the drain, source and gate of each MOS transistor are provided with external connection terminals.

7. The novel power MOS module structure of any of claims 1-5, wherein the absorption circuit comprises: the circuit comprises an absorption capacitor, a first resistor and a second resistor;

one end of the absorption capacitor is connected with the drain electrode of the corresponding MOS tube;

the other end of the absorption capacitor is connected with one end of the first resistor and one end of the second resistor respectively;

the other ends of the first resistor and the second resistor are connected with the source electrode of the corresponding MOS tube.

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