CN213377476U - Nozzle device for high-aspect-ratio deep-hole structure wafer or thin glue spraying wafer - Google Patents
Nozzle device for high-aspect-ratio deep-hole structure wafer or thin glue spraying wafer Download PDFInfo
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- CN213377476U CN213377476U CN202021195669.8U CN202021195669U CN213377476U CN 213377476 U CN213377476 U CN 213377476U CN 202021195669 U CN202021195669 U CN 202021195669U CN 213377476 U CN213377476 U CN 213377476U
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Abstract
The utility model discloses a nozzle device that is arranged in high aspect ratio deep hole structure wafer or thin gluey spraying wafer belongs to the gluey technical field that spouts among the integrated circuit manufacturing wafer technology. The nozzle device comprises a liquid conveying pipe, an atomizing device and an ash removal device, wherein the liquid conveying pipe is connected with the atomizing device, and the atomizing device is connected with the ash removal device; the atomization device is used for atomizing the spray glue conveyed by the liquid conveying pipe into liquid drops by using photoresist or a protective isolation layer, the small-size liquid drops act on the surface of the wafer, and the glue spraying speed can be adjusted by adjusting the voltage and the resonance frequency in the atomization device so as to meet different process requirements. The nozzle is used for spraying photoresist or a protective isolation layer on a wafer with a deep hole structure and a wafer needing a thin glue spraying process (below 2 mu m), and can solve the problem that the conventional glue spraying mode is difficult to meet the process requirements such as spraying of a high-aspect-ratio deep hole structure wafer and a thin glue spraying wafer.
Description
Technical Field
The utility model relates to a spout mucilage binding and put technical field among integrated circuit manufacturing wafer technology, concretely relates to a nozzle device that is used for high aspect ratio deep hole structure wafer or thin gluey spraying wafer, the device are used for the even spraying photoresist of wafer surface or protection isolation layer, are applicable to three-dimensional (3D) encapsulation in the semiconductor field, and especially TSV (through silicon via) processing procedure, MEMS (micro-electro-mechanical systems) processing procedure etc. spout gluey technology and handle.
Background
The three-dimensional laminated packaging, Micro Electro Mechanical System (MEMS) packaging, vertical integrated sensor array and mesa MOS power device flip-chip bonding technology and other IC integrated packaging technologies are developed from 2D to 3D, the requirement is that the surface of a deep hole structure wafer with a high aspect ratio or the surface of a wafer needing to be sprayed with a layer of thin glue is uniformly coated with photoresist or a protective isolation layer, the traditional glue spraying mode is that an ultrasonic atomizing nozzle is adopted, the size of atomized liquid drops is more than 18 mu m, for the deep hole structure with the high aspect ratio (the aspect ratio is more than 2:1, or the width is narrow and less than 30 mu m) such as the deep hole structure with the width of 30 mu m and the depth of 100 mu m, the photoresist or the protective isolation layer cannot be uniformly sprayed to the top, the corner, the side wall and the bottom of the deep hole, or the photoresist or the protective isolation layer cannot be filled in the deep hole, even the photoresist or the, the deep hole opening is blocked, so that the wafer has defects in the subsequent processing technology, and the processing requirements cannot be met.
The size of atomized liquid drops of the traditional ultrasonic atomizing nozzle is more than 18 mu m, and the traditional ultrasonic atomizing nozzle has many defects aiming at the thin glue process spraying with the thickness of less than 2 mu m, the surface uniformity is poor, and even partial wafers have no coating condition. In view of the above, it is desirable to develop a spraying apparatus suitable for a deep hole structure wafer with a high aspect ratio or a thin glue spraying wafer.
SUMMERY OF THE UTILITY MODEL
In order to solve the above-mentioned shortcomings existing in the prior art, the present invention provides a nozzle device for a deep hole structure wafer with a high aspect ratio or a thin glue-sprayed wafer, which can achieve uniform coating of photoresist or protective isolation layer on the top (T1-1, T1-2), upper corners (T2-1, T2-2), side walls (T3-1, T3-2, T4-1, T4-2), lower corners (T5-1, T5-2) and bottom (T6) of the deep hole on the wafer, or can achieve uniform filling of the deep hole and uniform coating of thin glue.
In order to achieve the above object, the utility model adopts the following technical scheme:
a nozzle device for a wafer with a high depth-to-width ratio and a deep hole structure or a thin glue sprayed wafer comprises a liquid conveying pipe, an atomizing device and an ash removal device, wherein the liquid conveying pipe is connected with the atomizing device, and the atomizing device is connected with the ash removal device; wherein:
liquid conveying pipe: the device is used for conveying the photoresist or the protective isolation layer for glue spraying to the atomizing device;
an atomization device: the device is used for atomizing the glue spray conveyed by the liquid conveying pipe into liquid drops by using a photoresist or a protective isolation layer, and directly acting the liquid drops on the surface of the wafer; the atomization device comprises an atomization sheet;
an ashing device: the device is used for adsorbing the ashed small liquid drops or dissolving the micro liquid drops generated in spraying so as to achieve the ideal purification effect.
The nozzle device also comprises a shell and a sealing cover, wherein the sealing cover is arranged at the top of the shell, the shell and the sealing cover form a closed space, and the height range of the shell is 0.5-30 mm; the atomization device is arranged in the closed space.
The liquid conveying pipe extends into the sealing cover and then is connected with a temporary liquid storage tank, and the temporary liquid storage tank is positioned above the atomizing sheet; the atomization sheet is provided with a plurality of through holes, and the through holes are arranged in a ring shape, a circular shape, a honeycomb shape or a linear shape; the size range of the through holes on the atomizing plate is 1-20 mu m, and the arrangement mode, the number and the size of the through holes are designed according to different process requirements.
The atomization piece is provided with a vibration piece (a piezoelectric ceramic piece), and the glue spraying rate and the liquid outlet state can be adjusted by adjusting the voltage of the vibration piece and the resonance frequency, so as to meet different process requirements; the voltage range is 20-60V, and the resonance frequency is 50-130 KHZ.
The ashing removal device is connected to the side wall of the shell of the nozzle device through a pipeline, and is a vacuum generator ashing removal device or an acetone buffer ashing removal device.
The vacuum generator ashing device comprises a vacuum generator, wherein the vacuum generator uses CDA gas, the CDA pressure range is 0.5-2bar, and droplets ashed near the atomizing plate are absorbed out after reaching a vacuum environment, so that a purification effect is achieved.
The acetone buffer ashing device comprises a container with two holes at the top, acetone is contained in the container, one hole at the top of the container is connected with a nitrogen pipe, a glass pipe is inserted into the other hole and extends into the acetone, and the upper end of the glass pipe is connected to the side wall of the shell of the nozzle device through a pipeline; the nitrogen pipe is used for introducing nitrogen into the container to pressurize (N)2The pressure range is 0.5-1bar), the acetone in the container is volatilized in an accelerated way, and the glass tube can convey the volatilized (foamed) acetone gas-liquid mixture to the terminal (atomizing sheet) of the nozzle so as to dissolve the micro liquid drops generated in the spraying process, thereby achieving the ideal purification effect.
When the nozzle device is used for spraying a wafer with a deep hole structure or a thin glue wafer with a high depth-to-width ratio, the wafer is fixed on a two-dimensional platform, the wafer is in a heating state when being sprayed, and the heating temperature is controlled to be 20-150 ℃; the scanning distance of the nozzle device along the Y-axis direction is controlled within the range of 0.1-5mm, and the scanning speed of the nozzle device along the X-axis direction is controlled within the range of 10-100 mm/min.
The utility model has the advantages and beneficial effects that:
1. the utility model discloses atomizing device among the nozzle device be used for with what the liquid conveyer pipe was carried spouts gluey with the photoetching glue or protection isolation layer atomizing become the liquid drop, with the liquid drop direct action on take the wafer surface of figure. Compared with the traditional glue spraying device, the ultrasonic nozzle and the related device thereof are avoided.
2. The size range of the through holes on the atomizing plate in the nozzle device is 1-20 μm, and the through holes with proper size can be selected, so that the process requirements of wafers with different depth-width ratios and deep hole structures and thin glue spraying wafers can be met. The arrangement mode of the through holes is one of annular arrangement, circular arrangement, honeycomb arrangement or linear arrangement. And selecting a through hole arrangement mode according to different process requirements. The design can solve the process requirements which are difficult to meet by the conventional glue spraying mode, such as the wafer spraying of the deep hole structure with the high depth-to-width ratio and the wafer spraying of the thin glue spraying process.
3. The utility model discloses the nozzle is maintained and is washd simply, because atomizing device produces the process of vibration and can wash, adds acetone in the liquid conveying pipe and can wash when wasing. The atomizing device is maintained or replaced only by disassembling and replacing the pore plate, so that the operation is easy and the maintenance is convenient.
4. The utility model discloses the shell and the lid of nozzle are connected and are formed built-in space, atomizing device design in the built-in space, the liquid conveyer pipe set up in built-in space upper portion. The built-in space plays a role in protecting the atomization device, has an attractive structure and can prevent the atomization device from being damaged due to collision.
5. The utility model discloses be equipped with interim reservoir in the nozzle, interim reservoir intercommunication the liquid conveyer pipe with atomizing device. Through the temporary liquid storage tank is connected with the atomizing device, the cross-sectional area of the liquid conveying pipe can be reduced, and the space is saved.
Drawings
Fig. 1 is a schematic view (top view) of the overall structure of the nozzle device for the wafer with deep hole structure and thin glue spraying wafer according to the present invention.
Fig. 2 is an external view of the atomizing device of the nozzle device of the present invention.
Fig. 3 is a longitudinal section of the atomizing device of the nozzle device of the present invention.
FIG. 4 is a schematic view of an ashing device (vacuum generator ashing device) in the nozzle device according to the present invention.
Fig. 5 is a schematic view of an ashing device (acetone buffer ashing device) in the nozzle device of the present invention.
FIG. 6 is a schematic diagram of different positions T1-T6 of the deep hole structure on the wafer.
In the figure: 1-an atomizing device; 2-pipeline; 3-ashing removal equipment; 4-liquid conveying pipe; 5-sealing cover; 6-a housing; 7-atomizing tablets; 8-temporary reservoir.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings and examples.
As shown in fig. 1-5, the present invention provides a nozzle device for a deep hole structure wafer with a high aspect ratio and a thin glue spraying wafer, comprising a liquid delivery pipe 4, an atomization device 1 and an ashing device 3, wherein the liquid delivery pipe 4 is connected with the atomization device 1 and is used for delivering a photoresist for glue spraying or a protective isolation layer to the atomization device; the atomization device is used for atomizing the glue sprayed by the liquid conveying pipe into liquid drops by using a photoresist or a protective isolation layer, and the liquid drops directly act on the surface of the wafer; the atomization device is connected with an ash removal device 3, and the ash removal device is used for adsorbing the small liquid drops after ashing or dissolving the small liquid drops generated during spraying so as to achieve an ideal purification effect.
The nozzle device also comprises a shell 6 with openings at the upper end and the lower end and a sealing cover 5, wherein the height of the shell is 0.5-30 mm; the sealing cover is fixed at an opening at the upper end of the shell through a bolt, the sealing cover and the shell form a closed space, and the atomizing device is arranged in the closed space. The atomization device comprises a circular atomization sheet 7 with a plurality of through holes, and the through holes are arranged in a ring shape, a circular shape, a honeycomb shape or a linear shape; the size range of the through holes on the atomizing plate is 1-20 mu m, and the arrangement mode, the number and the size of the through holes are designed according to different process requirements. The atomizing plate is fixed at the lower opening of the shell 6 through a bolt.
The liquid conveying pipe 4 extends into the sealing cover and then is connected with a temporary liquid storage tank 8, the temporary liquid storage tank 8 is positioned above the atomizing sheet 7, a vibration sheet (a piezoelectric ceramic sheet) is arranged on the atomizing sheet, and the glue spraying rate and the liquid outlet state can be adjusted by adjusting the voltage of the vibration sheet and the resonance frequency so as to meet different process requirements; the voltage range is 20-60V, and the resonance frequency is 50-130 KHZ.
The ashing device is a vacuum generator ashing device or an acetone buffer ashing device, the vacuum generator ashing device comprises a vacuum generator, and the vacuum generator is connected to the side wall of the shell of the nozzle device through a pipeline 2. The vacuum generator uses CDA gas, the CDA pressure range is 0.5-2bar, the ashed small liquid drops near the atomizing sheet are absorbed out after reaching the vacuum environment, and the purification effect is achieved.
The acetone buffer ashing device comprises a container with two holes at the top, acetone is contained in the container, one hole at the top of the container is used for connecting a nitrogen pipe, a glass thin pipe is inserted into the other hole and extends into the acetone, and the upper end of the glass pipe is connected to the side wall of the shell of the nozzle device through a pipeline 2; the nitrogen pipe is used for introducing nitrogen into the container to pressurize (N)2The pressure range is 0.5-1bar), the acetone in the container is volatilized in an accelerated way, and the glass tube can convey the volatilized (foamed) acetone gas-liquid mixture to the terminal (atomizing sheet) of the nozzle so as to dissolve the micro liquid drops generated in the spraying process, thereby achieving the ideal purification effect.
The nozzle device is used for spraying photoresist or isolating layers on different positions of the deep hole structure on the wafer, as shown in FIG. 6, the positions are a deep hole top T1 (comprising T1-1 and T1-2), an upper corner T2 (comprising T2-1 and T2-2), side walls T3 and T4 (comprising T3-1, T3-2, T4-1 and T4-2), a lower corner T5 (comprising T5-1 and T5-2) and a bottom (T6).
The utility model discloses the working process of spraying as follows: and placing the wafer to be sprayed on a slide holder with a heating device, and carrying out ultramicro atomization on the photoresist or the protective isolation layer by adopting the nozzle device to accelerate the spray of the atomized liquid particles to the surface of the wafer. The ashed small liquid drops are absorbed out after reaching a vacuum environment through the vacuum generator, so that the purification effect is achieved, or the acetone buffer ashing device is used for dissolving the small liquid drops generated during spraying, and the ideal purification effect is achieved.
The utility model discloses nozzle device is because the through-hole size is adjustable, arranges adjustably, and the cavity environment is controllable, can solve high aspect ratio or the thin gluey spraying technology difficulty that conventional ultrasonic atomization nozzle appears. The conventional ultrasonic atomizing nozzle cannot uniformly spray the photoresist or the protective isolation layer to the top, the corner, the side wall and the bottom of the deep hole, or cannot fill the photoresist or the protective isolation layer in the deep hole, even adhere the photoresist or the protective isolation layer at the opening of the deep hole together to block the opening of the deep hole, so that the wafer has defects in the subsequent processing technology, and the processing requirements cannot be met. The size of atomized liquid drops of the traditional ultrasonic atomizing nozzle is more than 18 mu m, and the traditional ultrasonic atomizing nozzle has many defects aiming at the spraying of a thin glue process with the size of less than 2 mu m, poor surface uniformity and even no coating condition on partial wafer.
Example 1
In this embodiment, the deep hole has a depth of 120 μm and a width of 30 μm, and the angle at the corner is 90 °. The size of the atomizing through-hole is 7 μm. The oscillating plate voltage is 30V, and the resonant frequency is 110 KHZ. The coating chemistry was a photoresist with a CP value of 2000 CP. The stage temperature was set to 80 deg.. The scanning pitch in the Y-axis direction was 0.5mm, and the scanning speed in the X-axis direction was 20 mm/s. The nozzle height was 3 mm.
And after coating, splitting the deep-hole wafer, and detecting the appearance and the film thickness value of the cross section of the sample by using an SEM (scanning Electron microscope). The morphology detection is that the coating thickness of each point of the top (T1) of the deep hole, the upper corner (T2), the side walls (T3, T4) and the bottom (T6) of the lower corner (T5) is uniform and consistent, and accumulation and no-coating conditions are avoided. The film thickness values of T1, T2, T3, T4 and T5 were 30. + -.1 μm, and the nonuniformity was. + -. 5%.
Example 2
In this embodiment, the deep hole has a dimension of 200 μm deep and 50 μm wide, and the angle at the corner is 90 °. The size of the atomizing through-hole is 5 μm. The voltage range of the oscillating plate is 40V, and the resonant frequency is 120 KHZ. The coating chemistry was a photoresist with a CP value of 350 CP. The stage temperature was set at 50 deg.. The scanning pitch in the Y-axis direction was 0.3mm, and the scanning speed in the X-axis direction was 30 mm/s. The nozzle height was 2 mm.
And after coating, splitting the deep-hole wafer, and detecting the appearance and the film thickness value of the cross section of the sample by using an SEM (scanning Electron microscope). And (3) completely coating all deep holes in the appearance detection, and avoiding photoresist-free positions at all the deep holes.
Example 3
In this embodiment, the wafer is a bare silicon wafer without pattern 12 ". The size of the atomizing through-hole is 10 μm. The voltage range of the oscillating plate is 20V, and the resonant frequency is 50 KHZ. The coating chemistry was a photoresist with a CP value of 70 CP. The stage temperature was set at 70 °. The scanning pitch in the Y-axis direction was 2mm, and the scanning speed in the X-axis direction was 80 mm/s. The nozzle height was 8 mm.
After coating, the wafer is used for detecting the thickness value of the sample film by using an optical film thickness meter. And (3) completely coating all deep holes in the appearance detection, and avoiding photoresist-free positions at all the deep holes. The average film thickness was 2 μm with a nonuniformity of. + -. 3%.
The implementation result shows that the utility model discloses in the process of spraying photoresist or protection isolation layer to the wafer that has the deep hole, and in the thin glue spraying process, realized the even spraying of high aspect ratio deep hole structure wafer and thin glue spraying wafer, deep hole top (T1), upper corner (T2), lateral wall (T3, T4), lower corner (T5) bottom (T6) each point coating thickness is even unanimous or can realize filling completely.
Claims (7)
1. A nozzle device for a wafer with a deep hole structure with a high depth-to-width ratio or a thin glue spraying wafer is characterized in that: the nozzle device comprises a liquid conveying pipe, an atomizing device and an ash removal device, wherein the liquid conveying pipe is connected with the atomizing device, and the atomizing device is connected with the ash removal device; wherein:
liquid conveying pipe: the device is used for conveying the photoresist or the protective isolation layer for glue spraying to the atomizing device;
an atomization device: the device is used for atomizing the glue spray conveyed by the liquid conveying pipe into liquid drops by using a photoresist or a protective isolation layer, and directly acting the liquid drops on the surface of the wafer; the atomization device comprises an atomization sheet;
an ashing device: the device is used for adsorbing the ashed small liquid drops or dissolving the micro liquid drops generated in spraying so as to achieve the ideal purification effect.
2. The nozzle device for high aspect ratio deep hole structure wafer or thin glue spraying wafer according to claim 1, wherein: the nozzle device also comprises a shell and a sealing cover, wherein the sealing cover is arranged at the top of the shell, the shell and the sealing cover form a closed space, and the height range of the shell is 0.5-30 mm; the atomization device is arranged in the closed space.
3. The nozzle device for high aspect ratio deep hole structure wafer or thin glue spraying wafer according to claim 2, wherein: the liquid conveying pipe extends into the sealing cover and then is connected with a temporary liquid storage tank, and the temporary liquid storage tank is positioned above the atomizing sheet; the atomization sheet is provided with a plurality of through holes, and the through holes are arranged in a ring shape, a circular shape, a honeycomb shape or a linear shape; the size range of the through holes on the atomizing plate is 1-20 mu m, and the arrangement mode, the number and the size of the through holes are designed according to different process requirements.
4. The nozzle device for high aspect ratio deep hole structure wafer or thin glue spraying wafer according to claim 3, wherein: the atomizing sheet is provided with a vibrating sheet.
5. The nozzle device for high aspect ratio deep hole structure wafer or thin glue spraying wafer according to claim 1, wherein: the ashing removal device is connected to the side wall of the shell of the nozzle device through a pipeline, and is a vacuum generator ashing removal device or an acetone buffer ashing removal device.
6. The nozzle device for high aspect ratio deep hole structure wafer or thin glue spraying wafer according to claim 5, wherein: the vacuum generator ashing device includes a vacuum generator that uses CDA gas.
7. The nozzle device for high aspect ratio deep hole structure wafer or thin glue spraying wafer according to claim 5, wherein: acetone buffer ash removal device includes that the top opens the container in two holes, splendid attire acetone in the container, and a hole connection nitrogen pipe in container top, another downthehole glass pipe of inserting and glass pipe stretch into acetone, and the glass pipe upper end is passed through the tube coupling and is in on nozzle device's the shell lateral wall.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021195669.8U CN213377476U (en) | 2020-06-24 | 2020-06-24 | Nozzle device for high-aspect-ratio deep-hole structure wafer or thin glue spraying wafer |
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| CN202021195669.8U CN213377476U (en) | 2020-06-24 | 2020-06-24 | Nozzle device for high-aspect-ratio deep-hole structure wafer or thin glue spraying wafer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113578588A (en) * | 2021-07-20 | 2021-11-02 | 山东工业职业学院 | A application equipment for new energy automobile parts machining |
| CN116666276A (en) * | 2023-07-28 | 2023-08-29 | 江苏鲁汶仪器股份有限公司 | Nozzle fixing structure and plasma etching system |
-
2020
- 2020-06-24 CN CN202021195669.8U patent/CN213377476U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113578588A (en) * | 2021-07-20 | 2021-11-02 | 山东工业职业学院 | A application equipment for new energy automobile parts machining |
| CN116666276A (en) * | 2023-07-28 | 2023-08-29 | 江苏鲁汶仪器股份有限公司 | Nozzle fixing structure and plasma etching system |
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