CN213357377U - Tool for gas phase siliconizing - Google Patents
Tool for gas phase siliconizing Download PDFInfo
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- CN213357377U CN213357377U CN202021942987.6U CN202021942987U CN213357377U CN 213357377 U CN213357377 U CN 213357377U CN 202021942987 U CN202021942987 U CN 202021942987U CN 213357377 U CN213357377 U CN 213357377U
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Abstract
The utility model belongs to the technical field of the gas phase siliconizing, a frock for gas phase siliconizing is disclosed. The reaction chamber comprises a reaction chamber, wherein a circle of supporting platform is arranged on the inner wall of the reaction chamber, a supporting plate is arranged on the supporting platform, the inner cavity of the reaction chamber is divided into a lower silicon melting region and an upper reaction region by the supporting plate, and a top cover of the reaction chamber is arranged at the top of the reaction chamber; a plurality of silicon steam channels are uniformly arranged on the supporting plate, and a placing groove is formed in the top of the supporting plate to avoid the silicon steam channels or a cushion block is placed on the top of the supporting plate to avoid the silicon steam channels; the reaction chamber, the reaction chamber top cover, the supporting plate and the cushion block are all made of isostatic pressing graphite, and the silicon carbide coating is arranged on the inner surface of the reaction chamber, the inner surface of the reaction chamber top cover, the surface of the supporting plate and the surface of the cushion block. The utility model discloses in can effectively alleviate the erosion of high temperature silicon steam to reacting chamber and backup pad, can effectively solve the shortcoming that the frock is easy to split, life is short, the siliconizing is effectual, the material performance uniformity is stable.
Description
Technical Field
The utility model belongs to the technical field of the gas phase siliconizing, concretely relates to frock for gas phase siliconizing.
Background
The carbon fiber reinforced ceramic matrix composite has the advantages of low density, good high-temperature oxidation resistance and corrosion resistance, is a novel high-temperature structural material and a functional material, and is widely applied to the field of aerospace. At present, Chemical Vapor Infiltration (CVI) and precursor impregnation-pyrolysis (PIP) processes are commonly used in the preparation process of carbon fiber reinforced ceramic matrix composite materials. Compared with a Chemical Vapor Infiltration (CVI) process and a precursor impregnation-pyrolysis (PIP) process, the Chemical Vapor Infiltration (CVI) process and the precursor impregnation-pyrolysis (PIP) process have the advantages of short preparation period, low cost and the like.
In the process of producing the carbon fiber reinforced ceramic matrix composite material by gas phase siliconizing, a siliconizing reaction needs to be carried out on a carbon/carbon composite material blank. A crucible for containing silicon powder is arranged on the bottom surface of a reaction chamber used in a gas-phase siliconizing method in the prior art, a plurality of cushion blocks are placed in the crucible, and a workpiece blank to be siliconized is placed above the cushion blocks. However, because the temperature required by siliconizing is high, the crucible and the reaction chamber mostly adopt high-temperature-resistant graphite, and the graphite is strongly corroded by silicon powder at high temperature, so that the interior of the crucible is thickened, cooled and cracked, and the service life of the crucible is shortened, and meanwhile, the siliconizing effect of a blank body is seriously influenced by the cracking of the reaction chamber and the crucible, so that the quality consistency of the carbon fiber reinforced ceramic matrix composite material is unstable and the production efficiency is low, and the silicon powder pollutes the furnace body of the sintering furnace due to the cracking of the reaction chamber and the crucible.
SUMMERY OF THE UTILITY MODEL
The not enough to prior art, the utility model aims at providing a frock for gas phase siliconizing.
In order to achieve the purpose, the utility model adopts the following technical scheme:
a tool for gas phase siliconizing comprises a reaction chamber, wherein a circle of supporting platform is arranged on the inner wall of the reaction chamber, a supporting plate is arranged on the supporting platform, the inner cavity of the reaction chamber is divided into a lower silicon melting region and an upper reaction region by the supporting plate, and a top cover of the reaction chamber is arranged at the top of the reaction chamber; a plurality of silicon steam channels are uniformly arranged on the supporting plate, a placing groove (which is convenient for the plate-shaped sample to be siliconized to be vertically clamped into the placing groove) is formed in the top of the supporting plate to avoid the silicon steam channels, or a cushion block (which is convenient for the plate-shaped sample to be siliconized to be horizontally placed on the cushion block) is arranged in the top of the supporting plate to avoid the silicon steam channels; the reaction chamber, the reaction chamber top cover, the supporting plate and the cushion block are all made of isostatic pressing graphite, and the silicon carbide coating is arranged on the inner surface of the reaction chamber, the inner surface of the reaction chamber top cover, the surface of the supporting plate and the surface of the cushion block.
Preferably, a gasket is arranged between the reaction chamber and the top cover of the reaction chamber, silicon vapor in the reaction chamber is prevented from leaking outwards in the siliconizing process, and the gasket is made of graphite.
Preferably, the silicon vapor channel is a hole, a grid or a grid, and the silicon vapor channel ensures that the silicon vapor uniformly passes through the support plate and reacts with the sample to be siliconized on the support plate.
Preferably, the holes are circular holes, rhombic holes, hexagonal holes or star-shaped holes.
Preferably, the outside of reaction chamber is equipped with the outer protective housing rather than shape looks adaptation, and the top of outer protective housing is equipped with outer protective housing top cap to prevent that the reaction chamber fracture from leading to silica flour pollution furnace body.
Preferably, the inner surface of the outer protective shell and the inner surface of the top cover of the outer protective shell are provided with silicon carbide coatings.
Preferably, the outer protective housing, the material of outer protective housing top cap are graphite.
Preferably, the outer contour of the reaction chamber is a cylinder with equal diameter.
The utility model discloses in, the internal surface of reaction chamber, reaction chamber top cap, the internal surface of outer protective housing top cap, backup pad surface, cushion surface all are provided with the carborundum coating, avoid receiving the erosion of high temperature silica flour.
Has the advantages that: the utility model discloses in, the reaction chamber sets up the carborundum coating with the backup pad surface, can effectively alleviate the erosion of high temperature silicon steam to reaction chamber and backup pad, can effectively solve the shortcoming that the frock is easy to split, life is short, uses the utility model discloses the frock carries out the gas phase siliconization, and the siliconization is effectual, and the material performance uniformity is stable.
Drawings
FIG. 1: the first implementation mode (provided with a placing groove) of the tool for gas phase siliconizing of the utility model is a schematic structural diagram;
FIG. 2: the utility model discloses a structure schematic diagram of a second tool implementation mode (provided with a cushion block) for gas phase siliconizing;
FIG. 3: a top view of the circular hole silicon vapor channel support plate;
FIG. 4: a top view of the diamond-shaped hole silicon steam channel supporting plate;
FIG. 5: a top view of the hexagonal hole silicon vapor channel support plate;
FIG. 6: a top view of the star-shaped aperture silicon vapor channel support plate;
FIG. 7: a top view of a grid-shaped silicon vapor channel support plate;
FIG. 8: a top view of a grid-shaped silicon vapor channel support plate;
FIG. 9: the utility model discloses a structure schematic diagram of a third implementation mode (provided with a placing groove) of the tool for gas phase siliconizing;
FIG. 10: the utility model discloses a structure schematic diagram of the tool for gas phase siliconizing in the fourth implementation mode (provided with a cushion block);
wherein the reference numerals are: 1-a reaction chamber; 2-a support plate; 3-a silicon melt region; 4-a reaction zone; 5-reaction chamber top cover; 6-a gasket; 7-outer protective shell; 8-outer protective shell top cover; 9-placing a groove; 10-a sample to be siliconized; 11-a cushion block; 201-circular hole; 202-diamond holes; 203-hexagonal holes; 204-star shaped holes; 205-a grid; 206-grid.
Detailed Description
The present invention will be further described with reference to the following specific embodiments. It should be understood that the following examples are illustrative of the present invention only and are not intended to limit the scope of the present invention.
Example 1
As shown in fig. 1 and 3, a tool for gas phase siliconizing comprises a reaction chamber 1, wherein the outer contour of the reaction chamber 1 is a cylinder with an equal diameter, a circle of supporting platform is arranged on the inner wall of the reaction chamber 1, a supporting plate 2 is arranged on the supporting platform, the inner cavity of the reaction chamber 1 is divided into a lower silicon melting region 3 and an upper reaction region 4 by the supporting plate 2, the lower silicon melting region 3 and the upper reaction region 4 have equal diameters, a reaction chamber top cover 5 is arranged at the top of the reaction chamber 1, and a gasket 6 is arranged between the reaction chamber 1 and the reaction chamber top cover 5; a plurality of silicon steam channels are uniformly arranged on the supporting plate 2, the silicon steam channels are circular holes 201, and the top of the supporting plate 2 is provided with a placing groove 9 avoiding the silicon steam channels; an outer protective shell 7 matched with the reaction chamber 1 in shape is arranged outside the reaction chamber, and an outer protective shell top cover 8 is arranged at the top of the outer protective shell 7; the reaction chamber 1, the reaction chamber top cover 5 and the support plate 2 are all made of isostatic graphite, and the gasket 6, the outer protective shell 7 and the outer protective shell top cover 8 are all made of graphite; and silicon carbide coatings are arranged on the inner surface of the reaction chamber 1, the inner surface of the reaction chamber top cover 5, the inner surface of the outer protective shell 7, the inner surface of the outer protective shell top cover 8, the surface of the support plate 2 and the surface of the cushion block 11.
In the working process of the utility model, firstly, silicon powder is evenly paved on the lower silicon melting area 3 of the reaction chamber 1, and a worker vertically clamps a plate-shaped sample to be siliconized 10 (a carbon/carbon composite plate-shaped sample) into the placing groove 9 according to the process requirement; then, the reaction chamber 1 is placed in the outer protective shell 7, then the whole tool is placed in a high-temperature vacuum furnace, the furnace is vacuumized to 100-500Pa, the vacuum degree in the reaction chamber 1 and the outer protective shell 7 is also vacuumized to 100-500Pa, the high-temperature vacuum furnace is heated to the silicification temperature of 1600-1800 ℃, the silicification heat preservation time is 60-120 minutes, and silicon steam enters the reaction region 4 through a silicon steam channel and reacts with a carbon matrix of the sample 10 to be siliconized to form silicon carbide.
Example 2
As shown in fig. 2 and 3, a tool for gas phase siliconizing comprises a reaction chamber 1, wherein the outer contour of the reaction chamber 1 is a cylinder with an equal diameter, a circle of supporting platform is arranged on the inner wall of the reaction chamber 1, a supporting plate 2 is arranged on the supporting platform, the inner cavity of the reaction chamber 1 is divided into a lower silicon melting region 3 and an upper reaction region 4 by the supporting plate 2, the lower silicon melting region 3 and the upper reaction region 4 have equal diameters, a reaction chamber top cover 5 is arranged at the top of the reaction chamber 1, and a gasket 6 is arranged between the reaction chamber 1 and the reaction chamber top cover 5; a plurality of silicon steam channels are uniformly arranged on the supporting plate 2, the silicon steam channels are circular holes, and the cushion blocks 11 are placed on the top of the supporting plate 2 and avoid the silicon steam channels; an outer protective shell 7 matched with the reaction chamber 1 in shape is arranged outside the reaction chamber, and an outer protective shell top cover 8 is arranged at the top of the outer protective shell 7; the reaction chamber 1, the reaction chamber top cover 5, the supporting plate 2 and the cushion block 11 are all made of isostatic pressing graphite, and the gasket 6, the outer protective shell 7 and the outer protective shell top cover 8 are all made of graphite; and silicon carbide coatings are arranged on the inner surface of the reaction chamber 1, the inner surface of the reaction chamber top cover 5, the inner surface of the outer protective shell 7, the inner surface of the outer protective shell top cover 8, the surface of the support plate 2 and the surface of the cushion block 11.
In the working process of the utility model, firstly, silicon powder is evenly spread on the lower silicon melting area 3 of the reaction chamber 1, and a worker flatly puts a plate-shaped sample to be siliconized 10 (a plate-shaped sample of carbon/carbon composite material) on a cushion block 11 according to the process requirement; then, the reaction chamber 1 is placed in the outer protective shell 7, then the whole tool is placed in a high-temperature vacuum furnace, the furnace is vacuumized to 100-500Pa, the vacuum degree in the reaction chamber 1 and the outer protective shell 7 is also vacuumized to 100-500Pa, the high-temperature vacuum furnace is heated to the silicification temperature of 1600-1800 ℃, the silicification heat preservation time is 60-120 minutes, and silicon steam enters the reaction region 4 through a silicon steam channel and reacts with a carbon matrix of the sample 10 to be siliconized to form silicon carbide.
Example 3
The difference from example 1 is that: as shown in FIG. 4, the silicon vapor channels are diamond shaped holes 202, all other things being equal to example 1.
Example 4
The difference from example 1 is that: as shown in fig. 5, the silicon vapor channel is a hexagonal hole 203, and the others are the same as those of embodiment 1.
Example 5
The difference from example 1 is that: as shown in fig. 6, the silicon vapor channel is a star-shaped hole 204, and the rest is the same as that of embodiment 1.
Example 6
The difference from example 1 is that: as shown in FIG. 7, the silicon vapor channel is a grid 205, all other things being equal to those of embodiment 1.
Example 7
The difference from example 1 is that: as shown in fig. 8, the silicon vapor channels are a mesh 206, all other things being equal to example 1.
Example 8
The difference from example 1 is that: as shown in fig. 9, the outer contour of the reaction chamber 1 is a cylinder with a constant diameter, the inner cavity of the reaction chamber 1 is divided into a lower silicon-melting region 3 and an upper reaction region 4, the inner diameter of the lower silicon-melting region 3 is smaller than the inner diameter of the upper reaction region 4, so that the wall thickness of the lower silicon-melting region 3 is greater than that of the upper reaction region 4, therefore, a supporting platform is formed at the top of the lower silicon-melting region 3, and the supporting plate 2 is placed on the supporting platform; otherwise, the same procedure as in example 1 was repeated.
Example 9
The difference from the embodiment 2 is that: as shown in fig. 10, the outer contour of the reaction chamber 1 is a cylinder with a constant diameter, the inner cavity of the reaction chamber 1 is divided into a lower silicon-melting region 3 and an upper reaction region 4, the inner diameter of the lower silicon-melting region 3 is smaller than the inner diameter of the upper reaction region 4, so that the wall thickness of the lower silicon-melting region 3 is greater than that of the upper reaction region 4, therefore, a supporting platform is formed at the top of the lower silicon-melting region 3, and the supporting plate 2 is placed on the supporting platform; otherwise, the same procedure as in example 2 was repeated.
Claims (8)
1. The utility model provides a frock for gas phase siliconizing which characterized in that: the reaction chamber comprises a reaction chamber, wherein a circle of supporting platform is arranged on the inner wall of the reaction chamber, a supporting plate is arranged on the supporting platform, the inner cavity of the reaction chamber is divided into a lower silicon melting region and an upper reaction region by the supporting plate, and a top cover of the reaction chamber is arranged at the top of the reaction chamber; a plurality of silicon steam channels are uniformly arranged on the supporting plate, and a placing groove is formed in the top of the supporting plate to avoid the silicon steam channels or a cushion block is placed on the top of the supporting plate to avoid the silicon steam channels; the reaction chamber, the reaction chamber top cover, the supporting plate and the cushion block are all made of isostatic pressing graphite, and the silicon carbide coating is arranged on the inner surface of the reaction chamber, the inner surface of the reaction chamber top cover, the surface of the supporting plate and the surface of the cushion block.
2. The tool for vapor phase siliconizing according to claim 1, characterized in that: a gasket is arranged between the reaction chamber and the top cover of the reaction chamber, and the gasket is made of graphite.
3. The tool for vapor phase siliconizing according to claim 1, characterized in that: the silicon vapor channel is a hole, a grid or a mesh.
4. The tool for vapor phase siliconizing according to claim 3, characterized in that: the holes are circular holes, rhombic holes, hexagonal holes or star-shaped holes.
5. The tool for vapor phase siliconizing according to claim 1, characterized in that: an outer protective shell matched with the reaction chamber in shape is arranged outside the reaction chamber, and an outer protective shell top cover is arranged at the top of the outer protective shell.
6. The tool for vapor phase siliconizing according to claim 5, characterized in that: and silicon carbide coatings are arranged on the inner surface of the outer protective shell and the inner surface of the top cover of the outer protective shell.
7. The tool for vapor phase siliconizing according to claim 6, characterized in that: the outer protective shell and the top cover of the outer protective shell are made of graphite.
8. The tool for vapor phase siliconizing according to any one of claims 1 to 7, characterized in that: the outer contour of the reaction chamber is a cylinder with equal diameter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021942987.6U CN213357377U (en) | 2020-09-08 | 2020-09-08 | Tool for gas phase siliconizing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021942987.6U CN213357377U (en) | 2020-09-08 | 2020-09-08 | Tool for gas phase siliconizing |
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| Publication Number | Publication Date |
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| CN213357377U true CN213357377U (en) | 2021-06-04 |
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| CN202021942987.6U Active CN213357377U (en) | 2020-09-08 | 2020-09-08 | Tool for gas phase siliconizing |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114634367A (en) * | 2022-03-31 | 2022-06-17 | 西安航空制动科技有限公司 | Process device for infiltration of reaction melt |
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2020
- 2020-09-08 CN CN202021942987.6U patent/CN213357377U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114634367A (en) * | 2022-03-31 | 2022-06-17 | 西安航空制动科技有限公司 | Process device for infiltration of reaction melt |
| CN114634367B (en) * | 2022-03-31 | 2024-02-09 | 西安航空制动科技有限公司 | Process device for infiltration of reaction melt |
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