CN213342169U - Duplexer formed by filter based on film bulk acoustic resonator technology - Google Patents
Duplexer formed by filter based on film bulk acoustic resonator technology Download PDFInfo
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Abstract
The utility model discloses a duplexer composed of a filter based on the film bulk acoustic resonator technology, which comprises a substrate for mounting components; a first filter T2, a second filter T4, a first IPD packaged device T1 and a second IPD packaged device T3 mounted on the substrate; the first filter T2 is connected to the second port TX through a transmission line equivalent circuit T02 with the second port, the second filter T4 is connected to the third port RX through a transmission line equivalent circuit T03 with the third port, the first and second IPD packaged devices T1 and T3 are connected to the antenna port ANT through a transmission line equivalent circuit T01 with the first port, and the first and second IPD packaged devices T1 and T3 are filters formed of lumped parameter devices for adjusting phases of signals passing through the first and second filters to prevent mutual interference between the signals.
Description
Technical Field
The utility model belongs to the technical field of the duplexer, a duplexer that wave filter constitutes based on film bulk acoustic resonator technique particularly.
Background
With the rapid development of wireless communication technology towards high frequency and high speed, and the development of electronic components towards miniaturization and low power consumption, Film Bulk Acoustic Resonator (FBAR) filters are increasingly used in wireless communication as new-generation wireless radio frequency filters, duplexers and multiplexer solutions. FBAR radio frequency filters employing silicon substrates and micro-electromechanical systems (MEMS) fabrication techniques are widely favored for superior performance and small device sizes.
With the increasingly stringent requirements for volume and performance in the consumer electronics industry, it is possible to embed miniature rf modules with more functions in portable consumer electronics products. The FBAR technology can realize a smaller size and higher performance, far superior to SAW (surface acoustic wave) and dielectric duplexer, etc., which compete therewith, and realize an extremely small volume. This volume advantage helps cell phone manufacturers to produce ultra-thin phones while facilitating the integration of advanced multimedia functions to meet the user's needs. The duplexer plays a key role in mobile phones and data cards, not only isolates input signals from output signals, but also can simultaneously realize bidirectional voice or data transmission.
SUMMERY OF THE UTILITY MODEL
1. Technical problem to be solved by the utility model
The utility model aims to solve the problem that the current duplexer is bulky and difficult to satisfy the demand.
2. Technical scheme
In order to achieve the above purpose, the utility model provides a technical scheme does:
the utility model discloses a duplexer that wave filter constitutes based on film bulk acoustic resonator technique, include
A substrate for mounting components;
a first filter T2, a second filter T4, a first IPD packaged device T1 and a second IPD packaged device T3 mounted on the substrate;
the first IPD package device T1 is connected to the first filter T2, the second IPD package device T3 is connected to the second filter T4, the first filter T2 is connected to the second port TX through the transmission line equivalent circuit T02 between the second port, the second filter T4 is connected to the third port RX through the transmission line equivalent circuit T03 between the third port, and the first IPD package device T1 and the second IPD package device T3 are connected to the antenna port ANT through the transmission line equivalent circuit T01 between the first port.
Preferably, the first IPD package device T1 includes a first inductor L1, a second inductor L2 and a first capacitor C1, and two ends of the first capacitor C1 are grounded through a first inductor L1 and a second inductor L2, respectively. The circuit can realize link impedance matching, provide a phase matching function and realize good matching and lower insertion loss in a pass band.
Preferably, the second IPD package device T3 includes a fifth inductor L5, a sixth inductor L6 and a second capacitor C2, and two ends of the second capacitor C2 are grounded through the fifth inductor L5 and the sixth inductor L6, respectively. The circuit can realize link impedance matching, provide a phase matching function and realize good matching and lower insertion loss in a pass band.
Preferably, the internal components of the IPD package device are all composed of different combinations of capacitance and inductance elements. Different combination modes of the IPD packaging device can realize different link impedance matching, not only can provide a phase matching function, but also can realize good matching performance in a pass band so as to achieve lower insertion loss and return loss.
Preferably, the first filter T2 includes four series-arm resonators, four parallel-arm resonators, a third inductance L3 and a fourth inductance L4, the four series-arm resonators include a first series-arm resonator Y1, a second series-arm resonator Y2, a third series-arm resonator Y3 and a fourth series-arm resonator Y4, the four parallel-arm resonators include a first parallel-arm resonator P1, a second parallel-arm resonator P2, a third parallel-arm resonator P3 and a fourth parallel-arm resonator P4, the third inductance L3 is provided between the first parallel-arm resonator P1, the second parallel-arm resonator P2 and the ground terminal, and the fourth inductance L4 is provided between the third parallel-arm resonator P3, the fourth parallel-arm resonator P4 and the ground terminal.
Preferably, the second filter T4 includes four series-arm resonators, four parallel-arm resonators, a seventh inductance L7 and an eighth inductance L8, the four series-arm resonators are a fifth series-arm resonator Y5, a sixth series-arm resonator Y6, a seventh series-arm resonator Y7 and an eighth series-arm resonator Y8, the four parallel-arm resonators are a fifth parallel-arm resonator P5, a sixth parallel-arm resonator P6, a seventh parallel-arm resonator P7 and an eighth parallel-arm resonator P8, the seventh inductance is provided between the fifth parallel-arm resonator P5 and the sixth parallel-arm resonator P6 and the ground terminal, and the eighth inductance is provided between the seventh parallel-arm resonator P7 and the eighth parallel-arm resonator P8 and the ground terminal.
Preferably, the first filter T2 and the second filter T4 are both film bulk acoustic resonators arranged in a stepped manner.
Preferably, the transmission line equivalent circuit model T01 includes a ninth inductor L01 and a third capacitor C01, and one end of the third capacitor C2 is grounded through the ninth inductor L01; the equivalent circuit model T02 includes a tenth inductor L02 and a fourth capacitor C02, one end of the fourth capacitor C02 is grounded through the tenth inductor L02; the equivalent circuit model T03 includes an eleventh inductor L03 and a fifth capacitor C03, and one end of the fifth capacitor C03 is grounded through the eleventh inductor L03.
An electronic device, the duplexer of any preceding claim.
3. Advantageous effects
Adopt the technical scheme provided by the utility model, compare with prior art, have following beneficial effect:
the utility model discloses a duplexer composed of a filter based on the film bulk acoustic resonator technology, which comprises a substrate for mounting components; a first filter T2, a second filter T4, a first IPD packaged device T1 and a second IPD packaged device T3 mounted on the substrate; the first IPD package device T1 is connected to the first filter T2, the second IPD package device T3 is connected to the second filter T4, the first filter T2 is connected to the second port TX through the transmission line equivalent circuit T02 between the second port, the second filter T4 is connected to the third port RX through the transmission line equivalent circuit T03 between the third port, the first IPD package device T1 and the second IPD package device T3 are connected to the antenna port ANT through the transmission line equivalent circuit T01 between the first port, and the first IPD package device T1 and the second IPD package device T3 are filters formed of lumped parameter devices for adjusting phases of signals passing through the first filter T2 and the second filter T4 to prevent mutual interference between the signals.
Drawings
FIG. 1 is a schematic structural diagram according to a first embodiment;
FIG. 2 is a block diagram of an internal circuit according to the first embodiment;
fig. 3 is a circuit diagram of different combinations of lumped elements inside an IPD package device according to the first embodiment;
FIG. 4 is a circuit diagram of a ladder filter according to the first embodiment;
fig. 5 is a diagram of a model of an equivalent inductance of the ground terminal of the ladder filter according to the first embodiment;
fig. 6 is a circuit diagram of different combinations of lumped elements inside the IPD package device according to the second embodiment;
fig. 7 is a diagram of an equivalent inductance model of the ground terminal of the ladder filter according to the second embodiment;
fig. 8 is a block diagram of an internal circuit of the second embodiment.
Detailed Description
In order to facilitate understanding of the invention, the invention will be described more fully hereinafter with reference to the accompanying drawings, in which several embodiments of the invention are shown, but which can be embodied in many different forms and are not limited to the embodiments described herein, but which are provided so as to render the disclosure of the invention more thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present; when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present; the terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs; the terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention; as used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Example 1
Referring to fig. 1 to 5, a duplexer formed by a filter based on the film bulk acoustic resonator technology of the present embodiment includes
A substrate for mounting components;
the first filter T2, the second filter T4, the first IPD packaging device T1 and the second IPD packaging device T3 are mounted on the substrate, and the first filter T2 and the second filter T4 are all film bulk acoustic resonators arranged in a step shape;
the first IPD package device T1 is connected to the first filter T2, the second IPD package device T3 is connected to the second filter T4, the first filter T2 is connected to the second port TX through the transmission line equivalent circuit T02 between the second port TX, the second filter T4 is connected to the third port RX through the transmission line equivalent circuit T03 between the third port RX, and the two IPD package devices are connected to the antenna port ANT through the transmission line equivalent circuit T01 between the first port ANT. The first IPD packaging device T1 and the second IPD packaging device T3 are composed of capacitance and inductance elements which are different in combination. Different combination modes of the IPD packaging devices can realize link impedance matching, not only can provide a phase matching function, but also can realize good matching and lower insertion loss in a pass band.
The first and second IPD package devices T1 and T3 are used to adjust the phases of signals passing through the first and second filters T2 and T4, prevent them from interfering with each other, and achieve good matching and low insertion loss within the pass band. The first IPD packaging device T1 and the second IPD packaging device T3T3 are composed of capacitance and inductance elements in different combinations. Different combination modes of the internal components of the IPD packaging device can realize different link impedance matching, not only can provide a phase matching function, but also can realize good matching performance in a pass band so as to achieve lower insertion loss and return loss.
The first IPD package device T1 includes a first inductor L1, a second inductor L2 and a first capacitor C1, and two ends of the first capacitor C1 are grounded through a first inductor L1 and a second inductor L2, respectively. The second IPD package device T3 includes a fifth inductor L5, a sixth inductor L6 and a second capacitor C2, and two ends of the second capacitor C2 are grounded through a fifth inductor L5 and a sixth inductor L6, respectively.
The inside of the IPD packaged device can be replaced by the circuit structure shown in fig. 3 (a/B/C/D).
The first filter T2 includes four series-arm resonators, four parallel-arm resonators, a third inductance L3, and a fourth inductance L4, where the four series-arm resonators are a first series-arm resonator Y1, a second series-arm resonator Y2, a third series-arm resonator Y3, and a fourth series-arm resonator Y4, the four parallel-arm resonators are a first parallel-arm resonator P1, a second parallel-arm resonator P2, a third parallel-arm resonator P3, and a fourth parallel-arm resonator P4, the third inductance L3 is disposed between the first parallel-arm resonator P1, the second parallel-arm resonator P2, and a ground terminal, and the fourth inductance L4 is disposed between the third parallel-arm resonator P3, the fourth parallel-arm resonator P4, and the ground terminal.
The second filter T4 includes four series-arm resonators, four parallel-arm resonators, a seventh inductor, and an eighth inductor, the four series-arm resonators are a fifth series-arm resonator Y5, a sixth series-arm resonator Y6, a seventh series-arm resonator Y7, and an eighth series-arm resonator Y8, the four parallel-arm resonators are a fifth parallel-arm resonator P5, a sixth parallel-arm resonator P6, a seventh parallel-arm resonator P7, and an eighth parallel-arm resonator P8, the seventh inductor is disposed between the fifth parallel-arm resonator P5, the sixth parallel-arm resonator P6, and the ground terminal, and the eighth inductor is disposed between the seventh parallel-arm resonator P7, the eighth parallel-arm resonator P8, and the ground terminal.
Conventional wireless communication systems often use dielectric filters and SAW (Surface Acoustic Wave) filters. Although the dielectric filter has better performance, the volume is large, and the dielectric filter is not convenient to use in portable equipment; the SAW filter has small volume, is widely applied at present, but still has the defects of low working frequency, larger insertion loss, lower power capacity and the like; the FBAR filter integrates the advantages of superior dielectric ceramic performance and smaller SAW volume, overcomes the defects of the dielectric ceramic performance and the SAW volume, has small volume, high Q value, high working frequency, large power capacity and low loss, is the next-generation filter for replacing the SAW filter, and is also the filter which is considered by the industry to be most likely to realize the full integration of a radio frequency module.
The basic working principle of the FBAR is that when an electric signal is loaded on the FBAR, a piezoelectric film in a device converts the electric signal into an acoustic signal through an inverter effect, a specific acoustic structure of the device presents selectivity to the acoustic signals with different frequencies, wherein the acoustic signal meeting the acoustic wave total reflection condition in the device realizes resonance in the device, the acoustic signal not meeting the resonance condition is attenuated, and the acoustic signal with more frequency difference with the resonant acoustic signal on a frequency spectrum is attenuated more quickly. Finally, the acoustic signals with the difference of the amplitude and the phase in the device are converted into output electric signals in equal proportion through the piezoelectric film. The FBAR based on the MEMS technology has the advantages that the propagation speed of bulk acoustic waves is higher than that of SAW, all FBARs have the advantages of high frequency, small volume, high energy conversion efficiency and the like, and high-performance small-volume surface-mounted microwave devices such as filters, duplexers and the like manufactured by utilizing the FBARs are the key technologies for solving the problems of system miniaturization and low power consumption.
The utility model discloses the filter structure of well adoption is trapezoidal FBAR filter structure, and the most important characteristic of the FBAR filter of this structure has lower insertion loss, can support steep filtering curve and the outstanding outband rejection ability of high challenging frequency channel allocation. Lower insertion loss can bring longer endurance, help to maximize input signal strength and bring higher data throughput, a steep filtering curve can bring better coexistence of adjacent frequency bands, and better out-of-band rejection capability can bring more frequency band working capabilities.
The ground inductance existing at the ground terminal of the resonator of the FBAR filter assembly is often an important factor affecting the out-of-band rejection and other indexes of the filter, if the influence of the factor is not considered in the design, better filter indexes cannot be realized, and the out-of-band rejection of the filter can be improved by selecting a proper inductance value. The utility model discloses combine FBAR self characteristic and ground connection inductance matching furthest to improve the wave filter performance.
The utility model discloses the IPD packaging part that well adopted has not only reduced the duplexer volume through IPD packaging technology, has guaranteed the input/output matching performance of wave filter moreover. Through the IPD device packaged by various lumped parameter elements with different combinations, various link impedance matching can be realized, and the effects of low insertion loss and return loss, namely lower voltage standing wave ratio and flatter passband characteristics, are achieved. But also the phase shift function can be realized and better out-of-band rejection can be obtained by the LC combined high-low pass filter.
The utility model discloses in the transmission line equivalent circuit model of adopting, can realize the impedance match between the port to influence such as the interior flatness of minimize duplexer input/output signal transmission line pair wave filter in-band, standing-wave ratio and pass-band loss.
The input-output signal transmission lines in the duplexer design can be replaced by equivalent circuit models T01/T02/T03, which are composed of capacitive and inductive elements, where the capacitive inductance values are extracted according to the specific transmission line model. The purpose is to equate the first filter T2 to the second port TX; a second filter T4 to a second port RX; and a transmission line model between the first IPD packaging device and the first port ANT and between the second IPD packaging device and the first port ANT is used for realizing impedance matching between ports so as to reduce the influence of a signal transmission line on the in-band flatness, standing-wave ratio, passband loss and the like of the filter as much as possible.
Example 2
Referring to fig. 6 to 8, a duplexer formed by a filter based on the film bulk acoustic resonator technology of the present embodiment includes
A substrate for mounting components;
the first filter T2, the second filter T4, the first IPD packaging device T1 and the second IPD packaging device T3 are mounted on the substrate, and the first filter T2 and the second filter T4 are all film bulk acoustic resonators arranged in a step shape;
the first filter T2 is connected to the second port TX through a transmission line equivalent circuit T02 between the second port TX, the second filter T4 is connected to the third port RX through a transmission line equivalent circuit T03 between the third port RX, and the two IPD packaged devices are connected to the antenna port ANT through a transmission line equivalent circuit T01 between the first port ANT.
The above-mentioned embodiments only express a certain implementation manner of the present invention, and the description thereof is specific and detailed, but not construed as limiting the scope of the present invention; it should be noted that, for those skilled in the art, without departing from the concept of the present invention, several variations and modifications can be made, which all fall within the protection scope of the present invention; therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (7)
1. A duplexer formed by a filter based on a film bulk acoustic resonator technology is characterized in that: comprises that
A substrate for mounting components;
a first filter T2, a second filter T4, a first IPD packaged device T1 and a second IPD packaged device T3 mounted on the substrate;
the first IPD package device T1 is connected to the first filter T2, the second IPD package device T3 is connected to the second filter T4, the first filter T2 is connected to the second port TX through the transmission line equivalent circuit T02 connected to the second port, the second filter T4 is connected to the third port RX through the transmission line equivalent circuit T03 connected to the third port RX, the first IPD package device T1 and the second IPD package device T3 are connected to the antenna port ANT through the transmission line equivalent circuit T01 connected to the first port, and the first IPD package device T1 and the second IPD package device T3 are filters formed by lumped parameter devices for adjusting phases of signals passing through the first filter and the second filter and preventing mutual interference between signals.
2. The duplexer of claim 1, wherein the duplexer comprises a filter based on film bulk acoustic resonator technology, and comprises: the first IPD package device T1 includes a first inductor L1, a second inductor L2 and a first capacitor C1, and two ends of the first capacitor C1 are grounded through a first inductor L1 and a second inductor L2, respectively.
3. The duplexer of claim 1, wherein the duplexer comprises a filter based on film bulk acoustic resonator technology, and comprises: the second IPD package device T3 includes a fifth inductor L5, a sixth inductor L6 and a second capacitor C2, and two ends of the second capacitor C2 are grounded through a fifth inductor L5 and a sixth inductor L6, respectively.
4. The duplexer of claim 1, wherein the duplexer comprises a filter based on film bulk acoustic resonator technology, and comprises: the first filter T2 includes four series-arm resonators, four parallel-arm resonators, a third inductance, and a fourth inductance, the four series-arm resonators are a first series-arm resonator Y1, a second series-arm resonator Y2, a third series-arm resonator Y3, and a fourth series-arm resonator Y4, the four parallel-arm resonators are a first parallel-arm resonator P1, a second parallel-arm resonator P2, a third parallel-arm resonator P3, and a fourth parallel-arm resonator P4, the third inductance L3 is provided between the first parallel-arm resonator P1, the second parallel-arm resonator P2, and a ground terminal, and the fourth inductance L4 is provided between the third parallel-arm resonator P3, the fourth parallel-arm resonator P4, and the ground terminal.
5. The duplexer of claim 1, wherein the duplexer comprises a filter based on film bulk acoustic resonator technology, and comprises: the second filter T4 includes four series-arm resonators, four parallel-arm resonators, a seventh inductance, and an eighth inductance, the four series-arm resonators are a fifth series-arm resonator Y5, a sixth series-arm resonator Y6, a seventh series-arm resonator Y7, and an eighth series-arm resonator Y8, the four parallel-arm resonators are a fifth parallel-arm resonator P5, a sixth parallel-arm resonator P6, a seventh parallel-arm resonator P7, and an eighth parallel-arm resonator P8, the seventh inductance is provided between the fifth parallel-arm resonator P5, the sixth parallel-arm resonator P6, and the ground terminal, and the eighth inductance is provided between the seventh parallel-arm resonator P7, the eighth parallel-arm resonator P8, and the ground terminal.
6. The duplexer of claim 1, wherein the duplexer comprises a filter based on film bulk acoustic resonator technology, and comprises: the first filter T2 and the second filter T4 are film bulk acoustic wave resonators arranged in a ladder shape.
7. The duplexer of claim 1, wherein the duplexer comprises a filter based on film bulk acoustic resonator technology, and comprises: the first IPD packaging device T1 and the second IPD packaging device T3 are composed of capacitance and inductance elements which are different in combination.
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| CN202021094598.2U CN213342169U (en) | 2020-06-15 | 2020-06-15 | Duplexer formed by filter based on film bulk acoustic resonator technology |
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| CN202021094598.2U CN213342169U (en) | 2020-06-15 | 2020-06-15 | Duplexer formed by filter based on film bulk acoustic resonator technology |
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