CN213340355U

CN213340355U - Insulated gate bipolar transistor

Info

Publication number: CN213340355U
Application number: CN202022622595.8U
Authority: CN
Inventors: 周际梁
Original assignee: Shenzhen Zhongming Electronics Co ltd
Current assignee: Shenzhen Zhongming Electronics Co ltd
Priority date: 2020-11-13
Filing date: 2020-11-13
Publication date: 2021-06-01
Anticipated expiration: 2030-11-13

Abstract

The utility model discloses an insulated gate bipolar transistor relates to a semiconductor field. The utility model discloses in, including insulated gate bipolar transistor body and slide, one side of insulated gate bipolar transistor body is provided with the spout, one side of spout is provided with the spring groove, one side fixedly connected with spring in spring groove, the inner wall top in spring groove is provided with the stopper with one side of bottom, the one end fixedly connected with fixed column of spring, the one end surface of fixed column is provided with the fixed block, is provided with the heat-conducting plate, and the heat that gives off absorbs through the heat-conducting plate, gives the fin with its heat transfer simultaneously, and this fin is the latticed of copper, and the cooperation diffuses its heat between a plurality of fin, has protected the safety of insulated gate bipolar transistor body to life has been improved, stitch and ground collision caused the phenomenon of bending damage when avoiding dropping through rubber column and slide setting.

Description

Insulated gate bipolar transistor

Technical Field

The utility model relates to a semiconductor field specifically is an insulated gate bipolar transistor.

Background

The semiconductor refers to a material with electric conductivity between a conductor and an insulator at normal temperature, and has applications in the fields of integrated circuits, consumer electronics, communication systems, photovoltaic power generation, illumination, high-power conversion and the like, for example, a diode is a device made of a semiconductor, the importance of the semiconductor is very great from the viewpoint of technology or economic development, most of electronic products, such as computers, mobile phones or digital recorders, have very close association with the semiconductor, the range of the electronic products includes very wide, and an insulated gate bipolar transistor is provided.

However, the existing insulated gate bipolar transistor is not enough, when people need to research and develop products or perform experiments, the transistor is easy to take up and slide due to the small size, the pin of the transistor collides with the ground, bending damage is caused, follow-up operation is inconvenient, and a large amount of heat can be generated during long-term use.

SUMMERY OF THE UTILITY MODEL

An object of the present invention is to provide an insulated gate bipolar transistor to solve the problems in the background art.

In order to achieve the above object, the utility model provides a following technical scheme:

the utility model provides an insulated gate bipolar transistor, includes insulated gate bipolar transistor body and slide, one side of insulated gate bipolar transistor body is provided with the spout, one side of spout is provided with the spring groove, one side fixedly connected with spring in spring groove, one side of the inner wall top in spring groove and one side of bottom are provided with the stopper, the one end fixedly connected with fixed column of spring, the one end surface of fixed column is provided with the fixed block, one side fixedly connected with slider of slide, one side of slider is provided with the fixed slot, the bottom of insulated gate bipolar transistor body is provided with the heat-conducting plate, the bottom of heat-conducting plate is provided with the fin, the one end fixedly connected with rubber post of slide, the front surface of insulated gate bipolar transistor body is provided with the stitch.

As a further aspect of the present invention: the insulated gate bipolar transistor comprises an insulated gate bipolar transistor body, and is characterized in that sliding grooves are formed in two sides of the insulated gate bipolar transistor body, spring grooves are formed in one sides of the sliding grooves and are matched with springs, fixing columns are matched with the spring grooves, the sliding grooves are matched with sliding blocks, and 2 fixing grooves are symmetrically formed in one sides of the sliding blocks.

As a further aspect of the present invention: the fixing groove is semicircular and matched with the fixing column.

As a further aspect of the present invention: the radiating fin is made of copper materials and is in a grid shape.

As a further aspect of the present invention: the bottom fixedly connected with a plurality of fin of heat-conducting plate, the heat-conducting plate is the graphite alkene heat-conducting plate.

As a further aspect of the present invention: the length sum of the sliding plate and the rubber column is longer than the length of the pin.

Compared with the prior art, the beneficial effects of the utility model are that: this insulated gate bipolar transistor is provided with the heat-conducting plate in its bottom, this heat-conducting plate is the graphite alkene heat-conducting plate, it is fast to have the heat absorption as novel material, the good advantage of heat conduction, the heat that gives off insulated gate bipolar transistor body absorbs through the heat-conducting plate, give the fin with its heat transfer simultaneously, this fin is the latticed of copper, the cooperation diffuses its heat between a plurality of fin, because the fin is latticed, increased with the flow of outside air, further improved the radiating efficiency, the safety of insulated gate bipolar transistor body has been protected, thereby the life has been improved, stitch and ground collision caused the phenomenon of crooked damage when avoiding dropping through rubber column and slide setting, its vibrations of further buffering of rubber column, the safety of protection stitch, the falling resistance has been improved, be favorable to staff's subsequent operation.

Drawings

Fig. 1 is a schematic structural diagram of an insulated gate bipolar transistor.

Fig. 2 is a schematic diagram of a rear cross-sectional structure of an insulated gate bipolar transistor.

Fig. 3 is an enlarged structural diagram of a in an insulated gate bipolar transistor.

Fig. 4 is a schematic diagram of a heat sink structure in an insulated gate bipolar transistor.

The labels in the figure are: 1. an insulated gate bipolar transistor body; 2. a slide plate; 3. a stitch; 4. a rubber column; 5. a chute; 6. a heat conducting plate; 7. a slider; 8. fixing grooves; 9. fixing a column; 10. a heat sink; 11. a spring slot; 12. a spring; 13. a fixed block; 14. and a limiting block.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Please refer to fig. 1-4, in the embodiment of the present invention, an insulated gate bipolar transistor, including an insulated gate bipolar transistor body 1 and a sliding plate 2, one side of the insulated gate bipolar transistor body 1 is provided with a sliding groove 5, one side of the sliding groove 5 is provided with a spring groove 11, one side fixedly connected with spring 12 of the spring groove 11, an inner wall top of the spring groove 11 is provided with a stopper 14 with one side of the bottom, one end fixedly connected with fixed column 9 of the spring 12, one end surface of the fixed column 9 is provided with a fixed block 13, one side fixedly connected with slider 7 of the sliding plate 2, one side of the slider 7 is provided with a fixed groove 8, a bottom of the insulated gate bipolar transistor body 1 is provided with a heat conducting plate 6, a bottom of the heat conducting plate 6 is provided with a heat sink 10, one end fixedly connected with rubber column 4.

Referring to fig. 1 to 3, sliding grooves 5 are disposed on both sides of an igbt body 1, spring grooves 11 are disposed on one sides of the sliding grooves 5, the spring grooves 11 are adapted to springs 12, fixing posts 9 are adapted to the spring grooves 11, the sliding grooves 5 are adapted to a

slider

7, and 2 fixing grooves 8 are symmetrically disposed on one side of the slider 7, so that the slider 2 is more stably fixed.

Referring to fig. 1 to 3, the fixing groove 8 is semicircular, and the fixing groove 8 is adapted to the fixing post 9, so that the sliding plate 2 can slide and fix on two sides of the igbt body 1.

Referring to fig. 2 and 4, the heat sink 10 is made of copper material, and the heat sink 10 is in a grid shape, so that the fluidity with the outside air is increased, thereby better dissipating heat.

Referring to fig. 1, 2 and 4, the bottom of the heat conducting plate 6 is fixedly connected with a plurality of heat dissipation fins 10, and the heat conducting plate 6 is a graphene heat conducting plate.

Referring to fig. 1 and 2, the length sum of the sliding plate 2 and the rubber column 4 is longer than the length of the pin 3, and when the sliding plate falls, the rubber column 4 firstly contacts with the ground to buffer, so that the safety of the pin 3 is protected.

The utility model discloses a theory of operation is: when the insulated gate bipolar transistor is used, a worker takes the insulated gate bipolar transistor out to a position needing to be installed, when the insulated gate bipolar transistor accidentally falls off from a hand in the taking process and falls on the ground, at the moment, the length of the added sliding plate 2 and the rubber column 4 is longer than that of the pin 3, so that the sliding plate 2 is firstly contacted with the rubber column 4 when the insulated gate bipolar transistor falls on the ground, the rubber column 4 buffers the rubber column 3, the safety of the pin 3 is protected, the phenomenon that the pin 3 collides with the ground to cause bending damage when the pin 3 falls off is avoided, when the insulated gate bipolar transistor is installed, the sliding plate 2 applies force to enable the spring 12 to stretch, the spring 12 stretches to enable the fixed column 9 to be separated from the fixed groove 8 at the top of the sliding block 7, the sliding block 7 is moved until the fixed groove 8 at the bottom of the sliding block 7 is matched with the fixed column 9, the fixed column is fixed through the restoring force of the spring 12, a limiting, when the insulated gate bipolar transistor is used for a long time, a large amount of heat can be generated, the heat conducting plate 6 is arranged at the bottom of the insulated gate bipolar transistor, the heat conducting plate 6 is a graphene heat conducting plate and has the advantages of being fast in heat absorption, good in heat conduction and the like, the heat emitted by the insulated gate bipolar transistor body 1 is absorbed through the heat conducting plate 6, meanwhile, the heat is transferred to the radiating fins 10, the radiating fins 10 are in a copper grid shape, and the heat is diffused through the cooperation of the plurality of radiating fins 10.

Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the invention.

Claims

1. An insulated gate bipolar transistor comprising an insulated gate bipolar transistor body (1) and a runner (2), characterized in that: one side of the insulated gate bipolar transistor body (1) is provided with a sliding chute (5), a spring groove (11) is arranged at one side of the sliding groove (5), a spring (12) is fixedly connected at one side of the spring groove (11), a limiting block (14) is arranged on one side of the top and the bottom of the inner wall of the spring groove (11), one end of the spring (12) is fixedly connected with a fixed column (9), a fixed block (13) is arranged on the surface of one end of the fixed column (9), one side of the sliding plate (2) is fixedly connected with a sliding block (7), one side of the sliding block (7) is provided with a fixed groove (8), the bottom of the insulated gate bipolar transistor body (1) is provided with a heat conducting plate (6), the bottom of the heat conducting plate (6) is provided with a radiating fin (10), one end of the sliding plate (2) is fixedly connected with a rubber column (4), the front surface of the insulated gate bipolar transistor body (1) is provided with pins (3).

2. An insulated gate bipolar transistor according to claim 1, wherein: the insulated gate bipolar transistor is characterized in that sliding grooves (5) are formed in two sides of the insulated gate bipolar transistor body (1), spring grooves (11) are formed in one sides of the sliding grooves (5), the spring grooves (11) are matched with springs (12), fixing columns (9) are matched with the spring grooves (11), the sliding grooves (5) are matched with sliding blocks (7), and 2 fixing grooves (8) are symmetrically formed in one sides of the sliding blocks (7).

3. An insulated gate bipolar transistor according to claim 1, wherein: the fixing groove (8) is semicircular, and the fixing groove (8) is matched with the fixing column (9).

4. An insulated gate bipolar transistor according to claim 1, wherein: the radiating fin (10) is made of copper materials, and the radiating fin (10) is in a grid shape.

5. An insulated gate bipolar transistor according to claim 1, wherein: the bottom fixedly connected with a plurality of fin (10) of heat-conducting plate (6), heat-conducting plate (6) are graphite alkene heat-conducting plate.

6. An insulated gate bipolar transistor according to claim 1, wherein: the sum of the lengths of the sliding plate (2) and the rubber column (4) is longer than the length of the pin (3).