CN213278071U - 5G millimeter wave transceiver module package and semi-finished product thereof - Google Patents
5G millimeter wave transceiver module package and semi-finished product thereof Download PDFInfo
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- CN213278071U CN213278071U CN202021929081.0U CN202021929081U CN213278071U CN 213278071 U CN213278071 U CN 213278071U CN 202021929081 U CN202021929081 U CN 202021929081U CN 213278071 U CN213278071 U CN 213278071U
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Abstract
The utility model discloses a 5G millimeter wave transceiver module group packaging part and semi-manufactured goods thereof, be in including base plate and setting the application integration of base plate top handles the chip, the end of drawing forth that the application integration handled the chip pass through supersound hot pressure welding technology form the gold bump with the base plate is interconnected, the upper surface that the application integration handled the chip is fixed with a millimeter wave transceiver chip through high heat conduction contact silver glue, has that epoxy cladding piece will through high-pressure evacuation mode millimeter wave transceiver chip, application integration handle chip, silicon-based substrate encapsulate together, the upper surface of millimeter wave transceiver chip will encapsulate the good packaging part through grinding technology will after the outside of millimeter wave transceiver chip expose in outside the epoxy cladding piece. The utility model discloses a gold flip-chip supersound thermocompression bonding technology can reduce 5G millimeter wave receiving and dispatching module device size by a wide margin, realizes the miniaturation to circuit high frequency performance, thermal behavior and reliability have been improved.
Description
Technical Field
The utility model belongs to the technical field of the 5G communication technology and specifically relates to a 5G millimeter wave receiving and dispatching module packaging part and semi-manufactured goods thereof.
Background
In recent years, the fifth generation mobile communication system 5G has become a hot spot of discussion in the communication industry and academia. Millimeter waves, which are essentially high-frequency electromagnetic waves, are electromagnetic waves having a wavelength of 1-10 mm, usually an electromagnetic wave having a frequency of 30GHz-300GHz, and are one of the main frequency bands used in 5G communications. The millimeter wave frequency band in the 5G communication uses 24GHz-100GHz high-frequency millimeter waves for communication, which brings about not only extremely fast network speed but also an important component of 5G differentiation experience for 5G.
High performance multi-channel millimeter wave transceiver chips are the core part of 5G communication systems, and packaging technology is becoming increasingly important for commercial applications in mass production. For millimeter wave transceiver module packaging, compact size, low rf switching loss, and good temperature performance are the most important challenges compared to conventional low frequency packaging. To solve the above three problems, gold wire bonding and Flip chip type packaging have been developed. The gold wire bonding mode is widely applied to interconnection between the bare chip and the PCB, and due to the fact that the bonding wire is short and an additional matching structure can guarantee radio frequency performance to a certain extent, low-loss signal transmission is achieved, and meanwhile connection between a chip transceiving channel and an external antenna can be established. However, since the bonding consistency cannot be guaranteed during mass production, and the bonding wire is easily interfered by the environment, the gold wire bonding type package is not widely used in mass production. The Flip Chip type Package is similar to a Chip Scale Package (Chip Scale Package), and the characteristics of relatively consistent performance and broadband are provided due to the short switching structure. However, for the current multi-channel communication chip, the number of pins of the chip is greatly increased due to high integration level, and the Flip chip type package cannot meet the requirement of the chip with a large number of pins.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a 5G millimeter wave receiving and dispatching module packaging part and semi-manufactured goods thereof in order to solve the above-mentioned problem that exists among the prior art.
The purpose of the utility model is realized through the following technical scheme:
A5G millimeter wave transceiving module packaging piece comprises a substrate and an application integration processing chip arranged above the substrate, wherein a leading-out end of the application integration processing chip forms a gold bump to be interconnected with the substrate through an ultrasonic hot-press welding process, a millimeter wave transceiving chip is fixed on the upper surface of the application integration processing chip through high-thermal-conductivity conductive silver adhesive, an epoxy resin coating piece encapsulates the millimeter wave transceiving chip, the application integration processing chip and a silicon substrate together in a high-pressure vacuumizing mode, and the outermost side of the millimeter wave transceiving chip is exposed out of the epoxy resin coating piece after the encapsulated packaging piece is ground through a grinding process.
Preferably, the substrate is a silicon-based substrate.
Preferably, a solder ball which is interconnected through a ball mounting process is arranged below the substrate, and the solder ball is used as a signal output pin of the 5G millimeter wave transceiving module package.
Preferably, the encapsulating material used by the epoxy resin coating piece is an epoxy resin injection molding sheet.
Preferably, the height of the gold bump is 30-40 μm.
Preferably, the application integration processing chip is an Asic chip.
Preferably, the millimeter wave transceiver chip is a high-resistance silicon chip.
The utility model also discloses a semi-manufactured goods of 5G millimeter wave receiving and dispatching module packaging part, including a set of foretell 5G millimeter wave receiving and dispatching module packaging part, every the base plate of 5G millimeter wave receiving and dispatching module packaging part is the part of same encapsulation support plate.
Preferably, a group of substrates distributed in a grid shape is formed on the package carrier.
The utility model discloses technical scheme's advantage mainly embodies:
1. by adopting the gold flip-chip ultrasonic hot-press welding process, the size of the 5G millimeter wave transceiver module device can be greatly reduced, the miniaturization is realized, the high-frequency performance of the circuit is improved, the thermal performance is high, and the reliability is high;
2. the packaging part product after the gold flip-chip ultrasonic thermocompression bonding process is small in size and convenient to apply, and compared with the traditional 5G millimeter wave receiving module packaging design, the packaging part product can effectively prevent the influence of the external environment on the chip and ensure the long-term effective work of the chip;
3. by adopting the silicon-based substrate, the 5G millimeter wave transceiver module package has the advantages of higher glass transition temperature, good heat resistance, strong moisture resistance, low dielectric constant (Dk), low dissipation factor (Df) and the like;
4. the epoxy resin is adopted to encapsulate the whole functional device, so that the 5G millimeter wave transceiving module packaging piece has strong corrosion resistance, can work in a severe environment, and has good radiation resistance, hydrolysis resistance, weather resistance, chemical resistance, inherent flame retardance, high dimensional stability, low hygroscopicity, extremely low linear expansion coefficient and dielectric constant, high impact strength and rigidity;
5. the 5G millimeter wave transceiving module packaging piece and the semi-finished product thereof are simple in structure and regular in shape, batch processing is facilitated, production efficiency is improved, product consistency is guaranteed, and product quality is improved.
Drawings
Fig. 1 is a cross-sectional view of a 5G millimeter wave transceiver module package of the present invention;
fig. 2 is a partial schematic view of a 5G millimeter wave transceiver module package semi-finished product according to the present invention.
Detailed Description
Objects, advantages and features of the present invention will be illustrated and explained by the following non-limiting description of preferred embodiments. These embodiments are merely exemplary embodiments for applying the technical solutions of the present invention, and all technical solutions formed by adopting equivalent substitutions or equivalent transformations fall within the scope of the present invention.
As shown in fig. 1, the utility model discloses a 5G millimeter wave transceiver module package spare, be in including base plate 1 and setting the application integration processing chip 2 of base plate 1 top, base plate 1 adopts silicon-based base plate. The application integrated processing chip 2 is an Asic chip. And the lower part of the substrate 1 is provided with a solder ball 6 which is interconnected through a ball mounting process, and the solder ball 6 is used as a signal output pin of the 5G millimeter wave transceiving module packaging piece.
The leading-out end of the application integration processing chip 2 is connected with the substrate 1 in an interconnecting mode through a gold salient point 5 formed through an ultrasonic hot-press welding process, the height of the gold salient point 5 is 30-40 mu m, and the height after welding is 20 mu m. The Asic chip gold ball mounting material adopts a high-purity 4N gold wire. The utility model discloses in, the application integration handles chip 2 and passes through supersound hot pressing flip-chip bonding on silicon-based substrate 1, the flip-chip precision satisfies 10 mu m.
The upper surface of the application integration processing chip 2 is fixed with a millimeter wave transceiver chip 4 through a high-thermal-conductivity conductive silver adhesive 3, and the millimeter wave transceiver chip 4 is a high-resistance silicon chip. The millimeter wave transceiver chip 4, the application integrated processing chip 2 and the silicon-based substrate 1 are encapsulated together by the epoxy resin coating piece 7 in a high-pressure vacuumizing mode, and the encapsulating material used by the epoxy resin coating piece 7 is an epoxy resin injection molding piece. The upper surface of the millimeter wave transceiver chip 4 is ground by a grinding process, and then the outermost side of the millimeter wave transceiver chip 4 is exposed out of the epoxy resin coating 7, so that a heat dissipation effect is achieved.
As shown in fig. 2, the utility model also discloses a semi-manufactured goods of 5G millimeter wave transceiver module package spare, including a set of foretell 5G millimeter wave transceiver module package spare, every the base plate 1 of 5G millimeter wave transceiver module package spare is the part of same encapsulation support plate 8. A group of substrates 1 distributed in a grid shape are formed on the packaging carrier plate 8, so that batch processing is realized, the processing efficiency is greatly improved, and the consistency of products is ensured; in other embodiments, the substrates on the package carrier may also be distributed in other forms, such as a grid shape, a ring shape, etc., which are not described herein again.
Proceeding the utility model discloses a man-hour of 5G millimeter wave transceiver module group packaging part adopts batch processing mode, and its concrete process is as follows:
s1, performing packaging preparation work, including grinding and cutting the application integration processing chip, providing a packaging carrier plate with a group of substrates, providing various packaging materials and packaging equipment;
s2, performing gold bump ball planting on the application integration processing chip bonding pad through the special gold bump ball planting equipment;
s3, placing the silicon-based substrate in a special substrate carrying box, and welding a group of application integration processing chips on the silicon-based substrate by using ultrasonic hot-press welding flip equipment;
s4, dispensing the backs of the application integration processing chips after the flip-chip mounting, pasting a group of millimeter wave transceiver chips above the application integration processing chips, and fixing the millimeter wave transceiver chips above the application integration processing chips through high temperature;
s5, encapsulating the silicon-based substrate, the application integration processing chip and the millimeter wave transceiver chip together by using epoxy resin injection molding materials through a vacuum film covering process;
s6, using a high-temperature oven to bake and reinforce the product by the group of packaged 5G millimeter wave transceiver module;
s7, grinding the injection molding surfaces of the group of 5G millimeter wave transceiver modules through a grinding process to expose the injection molding surfaces of the millimeter wave transceiver chips;
s8, printing a layer of solder paste on the back of the ground silicon-based substrate of the group of 5G millimeter wave transceiver modules;
s9, sticking the Solder balls on the back of the 5G millimeter wave transceiver module by a Solder Ball Mount process, and fixing the Solder balls on the silicon-based substrate by an SMT reflow soldering process;
and S8, cutting the packaged silicon-based substrate to form a plurality of single bodies of the 5G millimeter wave transceiving module.
The utility model has a plurality of implementation modes, and all technical schemes formed by adopting equivalent transformation or equivalent transformation all fall within the protection scope of the utility model.
Claims (9)
1.5G millimeter wave transceiver module package spare, its characterized in that: the millimeter wave packaging structure comprises a substrate (1) and an application integration processing chip (2) arranged above the substrate (1), wherein a lead-out end of the application integration processing chip (2) forms a gold bump (5) through an ultrasonic hot-press welding process to be interconnected with the substrate (1), a millimeter wave transceiver chip (4) is fixed on the upper surface of the application integration processing chip (2) through high-thermal-conductivity and electric-conductivity silver adhesive (3), an epoxy resin coating piece (7) encapsulates the millimeter wave transceiver chip (4), the application integration processing chip (2) and the silicon-based substrate (1) together in a high-pressure vacuumizing mode, and the outermost side of the millimeter wave transceiver chip (4) is exposed out of the epoxy resin coating piece (7) after the encapsulated packaging piece is ground through a grinding process on the upper surface of the millimeter wave transceiver chip (4).
2. The 5G millimeter wave transceiver module package of claim 1, wherein: the substrate (1) is a silicon-based substrate.
3. The 5G millimeter wave transceiver module package of claim 1, wherein: and the lower part of the substrate (1) is provided with a solder ball (6) which is interconnected through a ball mounting process, and the solder ball (6) is used as a signal output pin of the 5G millimeter wave transceiving module packaging piece.
4. The 5G millimeter wave transceiver module package of claim 1, wherein: the epoxy resin coating piece (7) uses an epoxy resin injection molding sheet as a coating material.
5. The 5G millimeter wave transceiver module package of claim 1, wherein: the height of the gold bump (5) is 30-40 mu m.
6. The 5G millimeter wave transceiver module package of claim 1, wherein: the application integrated processing chip (2) is an Asic chip.
7. The 5G millimeter wave transceiver module package of claim 1, wherein: the millimeter wave transceiver chip (4) is a high-resistance silicon chip.
8.5G millimeter wave transceiver module package piece's semi-manufactured goods, its characterized in that: a 5G millimeter wave transceiver module package according to any of claims 1 to 7, comprising a set of 5G millimeter wave transceiver module packages, the substrate (1) of each of said 5G millimeter wave transceiver module packages being part of a same package carrier (8).
9. The semi-finished product of a 5G millimeter wave transceiver module package of claim 8, wherein: a group of substrates (1) distributed in a grid shape are formed on the packaging carrier plate (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021929081.0U CN213278071U (en) | 2020-09-07 | 2020-09-07 | 5G millimeter wave transceiver module package and semi-finished product thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021929081.0U CN213278071U (en) | 2020-09-07 | 2020-09-07 | 5G millimeter wave transceiver module package and semi-finished product thereof |
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| Publication Number | Publication Date |
|---|---|
| CN213278071U true CN213278071U (en) | 2021-05-25 |
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| CN202021929081.0U Active CN213278071U (en) | 2020-09-07 | 2020-09-07 | 5G millimeter wave transceiver module package and semi-finished product thereof |
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| Country | Link |
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| CN (1) | CN213278071U (en) |
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- 2020-09-07 CN CN202021929081.0U patent/CN213278071U/en active Active
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