CN213211841U - High-power anti-surge alloy sheet resistor with double-sided resistor layer structure - Google Patents
High-power anti-surge alloy sheet resistor with double-sided resistor layer structure Download PDFInfo
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- CN213211841U CN213211841U CN202021966369.5U CN202021966369U CN213211841U CN 213211841 U CN213211841 U CN 213211841U CN 202021966369 U CN202021966369 U CN 202021966369U CN 213211841 U CN213211841 U CN 213211841U
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- alloy sheet
- heat dissipation
- layer
- resistance layer
- resistor
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- 239000000956 alloy Substances 0.000 title claims abstract description 65
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 65
- 239000010410 layer Substances 0.000 claims abstract description 80
- 230000017525 heat dissipation Effects 0.000 claims abstract description 33
- 239000011241 protective layer Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000003466 welding Methods 0.000 claims abstract description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 238000005476 soldering Methods 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
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Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202021966369.5U CN213211841U (en) | 2020-09-10 | 2020-09-10 | High-power anti-surge alloy sheet resistor with double-sided resistor layer structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN202021966369.5U CN213211841U (en) | 2020-09-10 | 2020-09-10 | High-power anti-surge alloy sheet resistor with double-sided resistor layer structure |
Publications (1)
Publication Number | Publication Date |
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CN213211841U true CN213211841U (en) | 2021-05-14 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202021966369.5U Active CN213211841U (en) | 2020-09-10 | 2020-09-10 | High-power anti-surge alloy sheet resistor with double-sided resistor layer structure |
Country Status (1)
Country | Link |
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CN (1) | CN213211841U (en) |
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2020
- 2020-09-10 CN CN202021966369.5U patent/CN213211841U/en active Active
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Legal Events
Date | Code | Title | Description |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240202 Address after: 215000, No. 200 Xingpu Road, Suzhou District, Suzhou City, Jiangsu Province, China, 9 # 301, 401 Patentee after: Simei microelectronics technology (Suzhou) Co.,Ltd. Country or region after: China Address before: 215513 Science Park No. 11 Sihai Road, Changshu Economic and Technological Development Zone, Suzhou City, Jiangsu Province Patentee before: SUZHOU PROSEMI ELECTRONIC TECH LTD. Country or region before: China |