CN213142165U

CN213142165U - Double-cathode deposition device

Info

Publication number: CN213142165U
Application number: CN202021642809.1U
Authority: CN
Inventors: 顾婉莹; 张敬娣; 武启飞; 冯敏强; 廖良生
Original assignee: Suzhou Fangsheng Photoelectricity Share Co ltd
Current assignee: Suzhou Fangsheng Photoelectricity Share Co ltd
Priority date: 2020-08-10
Filing date: 2020-08-10
Publication date: 2021-05-07
Anticipated expiration: 2030-08-10

Abstract

The utility model provides a double cathode deposition device, include transmission assembly, set up in transmission assembly below sputtering mechanism and coating by vaporization mechanism, one side of transmission assembly is provided with and is used for the drive transmission assembly pivoted actuating mechanism, actuating mechanism work drives and arranges in substrate on the transmission assembly transmits between coating by vaporization mechanism and sputtering mechanism. The beneficial effects of the utility model are embodied in: the utility model discloses combined two kinds of rete deposition methods of thermal evaporation and magnetron sputtering, designed the OLED device structure of a double cathode, improved output greatly, simultaneously, can also satisfy the requirement of large tracts of land preparation OLED device under the condition of reduce cost.

Description

Double-cathode deposition device

Technical Field

The utility model relates to a double-cathode deposition device.

Background

The cathodes in the components such as LCD, OLED and the like produced in the market at present mostly deposit low-work-function metals such as Ag, Al, Mg, Li, Ca and the like on a substrate in a single-layer or alloy mode by a thermal evaporation method, and the method has the advantages of low material utilization rate, long production period and high equipment maintenance cost, and is not suitable for large-area and large-batch production and manufacturing of OLED; magnetron sputtering coating is a large-area coating technology, the deposition time is short, the material utilization rate is high, but sputtering deposition is carried out in a high-energy and complex environment, and an OLED cathode directly sputtered by magnetron sputtering is likely to damage an organic layer, so that the performance of a device is reduced, and the magnetron sputtering coating is not generally used for manufacturing an OLED cathode layer.

SUMMERY OF THE UTILITY MODEL

In order to solve the defects of the prior art, the utility model provides a double-cathode deposition device.

The purpose of the utility model is realized through the following technical scheme:

the double-cathode deposition device comprises a transmission assembly, a sputtering mechanism and an evaporation mechanism, wherein the sputtering mechanism and the evaporation mechanism are arranged below the transmission assembly, a driving mechanism used for driving the transmission assembly to rotate is arranged on one side of the transmission assembly, and the driving mechanism works to drive a substrate arranged on the transmission assembly to be transmitted between the evaporation mechanism and the sputtering mechanism.

Preferably, a baffle is arranged between the sputtering mechanism and the evaporation mechanism, and the transmission assembly drives the substrate to be transmitted from the upper part of the evaporation mechanism to the sputtering mechanism.

Preferably, the transmission assembly comprises a plurality of connecting shafts and supporting wheels sleeved at two ends of the connecting shafts, the connecting shafts are arranged on the support through mounting brackets, and the connecting shafts are arranged on the support at equal intervals.

Preferably, one end of the connecting shaft extends out of the support, a synchronizing wheel is arranged at one extending end of the connecting shaft, and the synchronizing wheels on the adjacent connecting shafts are connected through a synchronizing belt.

Preferably, the driving mechanism is a motor, and a motor shaft of the motor is connected with a synchronous wheel.

Preferably, the distance between the support wheels on the same connecting shaft is less than the length of the substrate, and the distance between the support wheels on adjacent connecting shafts is less than the width of the substrate.

Preferably, a motor shaft of the motor is connected with the synchronizing wheel through a magnetic fluid seal.

Preferably, the sputtering mechanism comprises a strip-shaped sputtering target.

Preferably, the evaporation mechanisms are at least two and comprise at least one resistance heating evaporation source evaporation mechanism and an electron beam heating evaporation source evaporation mechanism.

Preferably, the resistance heating evaporation source evaporation mechanism and the electron beam heating evaporation source evaporation mechanism are sequentially distributed along the inlet end to the outlet end of the double-cathode deposition device.

The beneficial effects of the utility model are embodied in: the utility model discloses combined two kinds of rete deposition methods of thermal evaporation and magnetron sputtering, designed the OLED device structure of a double cathode, improved output greatly, simultaneously, can also satisfy the requirement of large tracts of land preparation OLED device under the condition of reduce cost. By adopting two different thermal evaporation modes, the evaporation rate is greatly improved.

Drawings

FIG. 1: the structure of the utility model is schematically shown.

FIG. 2: the utility model discloses the front view of figure 1.

FIG. 3: the utility model discloses the top view of figure 1.

1. A support; 11. a substrate; 2. a baffle plate; 3. strip-shaped sputtering target materials; 4. metal vapor deposition point source; 51. a connecting shaft; 52. a mounting seat; 53. a support wheel; 6. a motor; 7. a driving wheel; 71. a magnetic fluid seal; 8. a driven wheel; 9. and (4) a synchronous belt.

Detailed Description

Following combination embodiment specifically explains the technical scheme of the utility model discloses a double cathode deposition device, it is shown to combine figure 1, including support 1, the support is put on the shelf and is equipped with transmission assembly, transmission assembly is provided with sputtering mechanism and coating by vaporization mechanism down respectively, sputter and pass through 2 intervals of baffle between the mechanism and the coating by vaporization mechanism. And a driving mechanism for driving the transmission assembly is arranged on one side of the transmission assembly. In this embodiment, the sputtering mechanism includes a set of parallel strip-shaped sputtering targets 3, and the evaporation mechanism includes a metal evaporation point source 4, where the metal may be a single metal or an alloy such as lithium, aluminum, calcium, and magnesium. In this embodiment, two evaporation mechanisms are provided, and the evaporation mechanisms can adopt resistance heating evaporation sources at the same time; different heating means may also be used. For example, to increase the evaporation rate, one of the evaporation mechanisms employs a resistance-heated evaporation source, and the other employs an electron beam-heated evaporation source. The resistance heating evaporation source evaporation mechanism is arranged at the inlet end of the double-cathode deposition device, and the electron beam heating evaporation source evaporation mechanism is arranged at the rear end of the resistance heating evaporation source evaporation mechanism.

The connecting shafts 51 are arranged on the support 1 at equal intervals, and in this embodiment, five connecting shafts 51 are provided, and the specific number of the connecting shafts can be set according to requirements. The transmission assembly comprises a connecting shaft 51, and two ends of the connecting shaft 51 are connected to the support 1 through mounting seats 52. For better transmission, two ends of the connecting shaft 51 are connected with supporting wheels 53 for supporting the OLED device substrate, the distance between two supporting wheels 53 on the same connecting shaft is less than the length of the substrate 11, and the distance between supporting wheels 53 on the same axis on adjacent connecting shafts is less than the width of the substrate 11.

One end of the connecting shaft 51 extends out of the support 1, a synchronizing wheel is arranged at the extending end, and the adjacent synchronizing wheels on the connecting shaft 51 are connected through a synchronizing belt 9. In this embodiment, one end of the first connecting shaft disposed at the outlet end of the sputtering mechanism is connected to a driving wheel 7, one end of the driving wheel 7 is connected to the driving mechanism, and the other synchronizing wheels are driven wheels 8. The driving mechanism is a motor 6, in order to better ensure the sealing performance, the driving mechanism is a motor in this embodiment, a motor shaft of the motor 6 is connected with a magnetic fluid sealing element 71, a driving wheel 7 is arranged between the magnetic fluid sealing element 71 and the motor shaft, the motor 6 drives the magnetic fluid sealing element 71 to rotate when working, the magnetic fluid sealing element 71 drives the driving wheel 7 to operate, the driving wheel 7 transmits power with a driven wheel 8 through a synchronous belt 9, and meanwhile, the driving shaft 51 is driven to rotate. The connecting shaft 51 rotates to drive the supporting wheel 53 to rotate, and the substrate on the supporting wheel 53 is driven to be transmitted between the evaporation mechanism and the sputtering mechanism. The transmission direction between the evaporation mechanism and the sputtering mechanism is changed by controlling the running direction of the motor 6. Of course, the driving motor may also be disposed on one side of the evaporation mechanism, and the specific position thereof may be selected according to the requirement.

The following brief description is the deposition steps of the double-cathode deposition device of the present invention:

the substrate on which the electron transport layer is deposited is conveyed to a supporting wheel 53 of a connecting shaft 51 above the sputtering mechanism, a motor 6 works to drive the connecting shaft 51 to rotate towards the direction of the evaporation mechanism, the substrate is driven to be conveyed on the connecting shaft 51, and a baffle above a metal evaporation point source 4 is opened to perform deposition preparation of a first cathode layer on the surface of the substrate. The deposition rate has a great influence on the properties of the film, such as the firmness, film stress, resistivity, film hardness, surface finish, surface topography, and microstructure of the film. The speed and the direction of the flow sheet of the glass substrate are adjusted by controlling the motor, so that the metal in the point source is uniformly deposited on the glass substrate, and the preparation of the first cathode layer is completed; for example, to improve the adhesion of the first cathode layer, the rotation speed of the motor can be reduced, so as to reduce the flow sheet speed of the substrate above the evaporation mechanism. Or adjusting the rotation direction of the motor to enable the substrate to reciprocate above the evaporation mechanism. In this exampleAnd the combination force of the evaporation rate and the film layer of the two different evaporation source mechanisms is improved compared with that of the evaporation source mechanism which only adopts resistance heating evaporation. During vapor deposition, firstly, a baffle of a resistance heating vapor deposition source vapor deposition mechanism is opened to prepare a surface film, the resistance heating utilizes joule heat generated after a resistance wire is electrified to obtain high temperature so as to melt and dissolve a film material to achieve the purpose of evaporation, the film material is evaporated by heating the vapor deposition source, atoms or molecules of steam overflow from the surface of the vapor deposition source and contact the surface of a substrate to form the film after condensation. When the substrate is transmitted to the position above the electron beam heating evaporation source evaporation mechanism, the baffle above the resistance heating evaporation source is closed, the baffle above the electron beam heating evaporation source is opened, electrons are accelerated by an electric field in the electric field by the electron beam heating, kinetic energy is obtained and is applied to the film material, and the film material is heated and gasified, so that evaporation coating is realized. The electron beam heating energy can obtain energy density far larger than that of a resistance heat source, and the value can reach 104-109W.cm^-2The heat is directly heated to the surface of the membrane material, the heat efficiency is high, and the heat conduction and heat radiation loss are less, so that a high-purity membrane layer is obtained. The thickness of the first cathode layer of the utility model can be controlled to be about 200A, and the nonuniformity is within 3 percent.

First cathode layer preparation finishes the back, and 6 drive substrates of motor move to sputtering mechanism direction, when glass substrate conveyed rectangular shape sputtering target (in the utility model discloses in the metal be aluminium) when the top, open magnetron sputtering's power, owing to receive the positive ion that produces behind the working gas (generally adopt Ar gas) ionization striking under the electric field effect for metal atom in the power flies to carry out the deposit to the substrate surface, forms the film, because the kinetic energy of atom is big, makes the adhesive force of film and substrate good. The thickness of the film is better controlled by controlling and adjusting the rotating speed and the direction of the motor, and the preparation of the second cathode layer is completed. For example, the speed of the motor can be adjusted to slow down the transport of the substrate, so that the deposited film is relatively thick; or the thickness of the film can be controlled by adjusting the rotation direction of the motor to make the substrate to and fro transmit on the connecting shaft 51 above the sputtering mechanism. Meanwhile, the uniformity and the film thickness of the second cathode layer are controlled by adjusting the power of the power supply, the flow rate of the argon gas, the pressure and the like. In the present invention, the thickness of the second cathode layer is about 800A, and the unevenness is within 15%. The cathode layer of the OLED device prepared by the device is double-layer, namely, a metal transition layer is evaporated before the metal cathode layer is subjected to magnetron sputtering, so that the damage of an organic layer is effectively avoided. The glass substrate before getting into this device need deposit hole injection layer, hole transport layer, luminescent layer, electron transport layer in proper order through the mode of thermal evaporation coating, above deposit evaporation coating mode and equipment all adopt current mode can, and do not belong to the utility model discloses a protection is key, so no longer give unnecessary details here.

Of course, the present invention has many specific embodiments, which are not listed here. All technical solutions formed by adopting equivalent substitutions or equivalent transformations fall within the scope of the present invention.

Claims

1. A dual cathode deposition apparatus, characterized by: the device comprises a transmission assembly, a sputtering mechanism and an evaporation mechanism, wherein the sputtering mechanism and the evaporation mechanism are arranged below the transmission assembly, a driving mechanism used for driving the transmission assembly to rotate is arranged on one side of the transmission assembly, and the driving mechanism works to drive a substrate arranged on the transmission assembly to be transmitted between the evaporation mechanism and the sputtering mechanism.

2. The twin cathode deposition apparatus according to claim 1, wherein a baffle is disposed between the sputtering mechanism and the evaporation mechanism, and the transport assembly transports the substrate from above the evaporation mechanism to the sputtering mechanism.

3. The twin cathode deposition apparatus according to claim 1, wherein the transport assembly comprises a plurality of connecting shafts and supporting wheels sleeved at two ends of the connecting shafts, the connecting shafts are disposed on the support through mounting brackets, and the connecting shafts are disposed on the support at equal intervals.

4. The twin cathode deposition apparatus according to claim 3, wherein one end of the connecting shaft extends out of the support, and a synchronizing wheel is disposed at the extended end, and the synchronizing wheels of adjacent connecting shafts are connected by a synchronizing belt.

5. The twin cathode deposition apparatus of claim 4, wherein the drive mechanism is a motor having a motor shaft coupled to a synchronizing wheel.

6. The twin cathode deposition apparatus of claim 3, wherein the distance between the support wheels on the same connecting shaft is less than the length of the substrate, and the distance between the support wheels on adjacent connecting shafts is less than the width of the substrate.

7. The twin cathode deposition apparatus of claim 5, wherein the motor shaft of the motor is coupled to the synchronizing wheel by a magnetic fluid seal.

8. The dual cathode deposition apparatus of claim 1, wherein the sputtering mechanism comprises a bar-shaped sputtering target.

9. The dual cathode deposition apparatus of claim 1, wherein there are at least two evaporation mechanisms, including at least one resistive heating evaporation source evaporation mechanism and electron beam heating evaporation source evaporation mechanism.

10. The twin cathode deposition apparatus of claim 9, wherein said resistive heating source evaporation mechanism and said electron beam heating source evaporation mechanism are sequentially distributed along an inlet end to an outlet end of said twin cathode deposition apparatus.