CN212991262U - Siw-based frequency band control filter - Google Patents

Abstract

The utility model discloses a frequency band control filter based on siw, which belongs to the field of filter control, and is based on siw, comprising a shell, a placing groove is dug in the shell, a filter body is arranged in the placing groove, the filter body comprises a top layer metal foil, a middle medium layer and a shell, the top layer metal foil, the middle medium layer and the shell are tightly attached from top to bottom, microstrip leading-out wires are arranged at the right side and the lower side of the top layer metal foil, a straight line transition structure groove matched with the microstrip leading-out wires is dug on the middle medium layer, first metal through holes are dug on the top layer metal foil, the middle medium layer and the shell, a middle layer metal foil is connected in the middle of the top layer medium, a micro-interference through hole is positioned on the middle line of the microstrip line, and the first metal through hole and the micro-interference through hole all penetrate through, the transmission is better, and the rectangular filter is small, light in weight.

Description

Siw-based frequency band control filter

Technical Field

The utility model relates to a filtering control field, more specifically say, relate to a frequency band control filter based on siw.

Background

The microwave filter is a passive device and is an important component of modern communication systems. The required signal in the loop can pass smoothly, so that in the circuit, the communication quality of a communication system has a very important relation with the performance of a filter in the system, and the performance of the filter even has a direct influence on the communication system. With the development of social science and technology, the filter is rapidly developed, and the scale of the circuit is further enlarged.

In order to improve the transmission performance of the filter, the filter is required to have low insertion loss and high return loss, and more importantly, in order to meet the miniaturization trend of modern communication terminals, the filter is required to have smaller volume and weight, and sometimes the size of the filter is even more important than the performance. The insertion loss of the traditional filter is large, the return loss is small, the transmission ratio is poor, and the traditional rectangular waveguide is large in size and heavy in weight. Therefore, a miniaturized filter with high transmission performance is urgently needed to solve the technical problems.

SUMMERY OF THE UTILITY MODEL

1. Technical problem to be solved

To the problem that exists among the prior art, the utility model aims to provide a frequency band control filter based on siw, it can realize that the loss is less, and transmission nature is better, and rectangular filter is small, light in weight.

2. Technical scheme

In order to solve the above problems, the utility model adopts the following technical proposal.

A frequency band control filter based on siw comprises a shell, wherein a placing groove is dug in the shell, a filter body is arranged in the placing groove and comprises a top layer metal foil and a middle medium layer, the top layer metal foil, the middle medium layer and the shell are tightly attached from top to bottom, microstrip lines are arranged on the right side and below the top layer metal foil, a straight line transition structure groove matched with the microstrip lines is dug in the middle medium layer, first metal through holes are dug in the top layer metal foil, the middle medium layer and the shell, the middle layer metal foil is connected with the middle layer metal foil, a perturbation through hole is dug in the upper end of the top layer metal foil and is located on the middle line of the microstrip lines, and the first metal through hole and the perturbation through hole penetrate through a structure formed by tightly combining the top layer metal foil, the middle medium layer and the shell, the upper end of intermediate level foil is cut and is dug there is the second metal through-hole, and the top layer foil is connected to the second metal through-hole, the upper end of shell is cut and is dug there are a plurality of screw holes, screw hole female connection has the screw rod, the upper end of shell is cut and is dug there are a plurality of evenly distributed's louvre, and it can realize that the loss is less, and the transmissibility is better, and rectangular filter is small, light in weight.

Furthermore, the outer end fixedly connected with SMA of microstrip line connects, is convenient for debug obstructed equipment.

Furthermore, the microstrip lines are all SIW characteristic impedance matching microstrip lines with 50 ohms, so that the high-power electronic product can be conveniently tested, and short circuit can be prevented.

Furthermore, the diameters of the first metal through holes, the second metal through holes and the perturbation through holes are all 0.4-0.5mm, the center distance between every two adjacent first metal through holes is 1mm, and the accuracy of a test result is improved.

Further, the top metal foil adopts a copper foil, the middle dielectric layer adopts Rogers RT/duroid5880(tm) material and has a relative dielectric constant of 2.2, the thickness of the middle dielectric layer is 1.016mm, and the thickness of all the copper foils is 0.03mm, so that higher frequency and filtering can be conveniently tested and controlled.

3. Advantageous effects

Compared with the prior art, the utility model has the advantages of:

(1) the scheme can realize smaller loss ratio, better transmission, small volume of the rectangular filter and light weight.

(2) The outer end of the microstrip line 6 is fixedly connected with an SMA joint, so that debugging on inaccessible equipment is facilitated.

(3) The microstrip lines are SIW characteristic impedance matching microstrip lines of 50 ohms, so that the high-power electronic product can be conveniently tested, and short circuit can be prevented.

(4) The diameters of the first metal through holes, the second metal through holes and the perturbation through holes are all 0.4-0.5mm, the center distance between every two adjacent first metal through holes is 1mm, and the accuracy of a test result is improved.

(5) The top metal foil adopts a copper foil, the middle dielectric layer adopts Rogers RT/duroid5880(tm) material, the relative dielectric constant is 2.2, the thickness of the middle dielectric layer is 1.016mm, and the thickness of all the copper foils is 0.03mm, so that higher frequency and filtering can be conveniently tested and controlled.

Drawings

Fig. 1 is a schematic view of the three-dimensional structure of the housing of the present invention;

fig. 2 is a schematic diagram of a three-dimensional structure of the filter of the present invention;

fig. 3 is a schematic diagram of a cross-sectional structure of the filter in a top view.

The reference numbers in the figures illustrate:

the structure comprises a shell 1, a second metal through hole 2, a middle layer metal foil 3, a perturbation through hole 4, a linear transition structure groove 5, a microstrip line 6, a top layer metal foil 7, a middle medium layer 8, a first metal through hole 9, a screw rod 10 and a heat dissipation hole 11.

Detailed Description

The technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiment of the present invention; obviously, the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by those skilled in the art without any inventive work are within the scope of the present invention based on the embodiments of the present invention.

In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "top/bottom", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted", "provided", "sleeved/connected", "connected", and the like are to be understood in a broad sense, such as "connected", which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Example 1:

referring to fig. 1-3, a siw-based band control filter includes a housing 1, a placement groove is cut in the housing 1, a filter body is disposed in the placement groove, the filter body includes a top metal foil 7 and a middle dielectric layer 8, the top metal foil 7, the middle dielectric layer 8 and the housing 1 are tightly attached from top to bottom, microstrip lines 6 are disposed on the right side and the lower side of the top metal foil 7, a linear transition structure groove 5 matched with the microstrip lines 6 is cut on the middle dielectric layer 8, first metal through holes 9 are cut on the top metal foil 7, the middle dielectric layer 8 and the housing 1, the middle of the top metal foil 7 is connected with the middle metal foil 3, a perturbation through hole 4 is cut on the upper end of the top metal foil 7, the perturbation through hole 4 is located on the middle line of the microstrip lines 6, and the first metal through hole 9 and the perturbation through hole 4 both penetrate through the top metal foil 7, The structure that middle dielectric layer 8 and shell 1 closely combined constitutes, the upper end of middle level metal forming 3 is dug and is had second metal through-hole 2, and top layer metal forming 7 is connected to second metal through-hole 2, and the upper end of shell 1 is dug and is had a plurality of screw holes, and threaded hole female connection has screw rod 10, and the upper end of shell 1 is dug and is had a plurality of evenly distributed's louvre 11.

Referring to fig. 1-2, the outer end of the microstrip line 6 is fixedly connected with an SMA joint for facilitating debugging of a device which is not in use, and a frequency band control filter based on siw according to claim 1 is characterized in that: the microstrip lines 6 are all SIW characteristic impedance matching microstrip lines 6 with 50 ohms, so that the high-power electronic product can be conveniently tested, and short circuit can be prevented.

Referring to fig. 2-3, a siw-based band control filter according to claim 1, wherein: the diameters of the first metal through holes 9, the diameters of the second metal through holes 2 and the diameters of the perturbation through holes 4 are all 0.4-0.5mm, the center distance between every two adjacent first metal through holes 9 is 1mm, the accuracy of a test result is improved, the top layer metal foil 7 adopts a copper foil, the middle dielectric layer 8 adopts Rogers RT/duroid5880(tm) materials, the relative dielectric constant is 2.2, the thickness of the middle dielectric layer 8 is 1.016mm, the thicknesses of all the copper foils are 0.03mm, and the high frequency and filtering can be conveniently tested and controlled.

When in use, a pair of top layer metal foils 7, a middle medium layer 8 and a middle layer metal foil 3 are tightly attached from top to bottom, a row of first metal through holes 9 are respectively arranged at the upper and lower boundaries of the top layer metal foil 7 of the SIW filter, port microstrip lines 6 are arranged at the right side and the lower two ends of the top layer metal foil 7, a linear transition structure is adopted, and the slot is arranged at the two sides of the microstrip line 6 to strengthen the transmission of the electromagnetic wave, the deviation of the slot and the middle horizontal line is 1mm, the middle layer metal foil 3 which points to the left at 45 degrees is inserted into the middle position of the middle dielectric layer 8, adding a second metal through hole 2 above the middle layer metal foil 4, connecting the middle layer metal foil 4 and the top layer metal foil 7, a perturbation metal through hole 4 is respectively added on the central line of the microstrip line 6 to connect the upper metal foil and the lower metal foil, so that the rectangular filter has the advantages of low loss, good transmission performance, small volume and light weight.

The above description is only the preferred embodiment of the present invention; the scope of the present invention is not limited thereto. Any person skilled in the art should also be able to cover the technical scope of the present invention by replacing or changing the technical solution and the improvement concept of the present invention with equivalents and modifications within the technical scope of the present invention.

Claims (5)

1. An siw-based band control filter, comprising a housing (1), characterized in that: a placing groove is formed in the shell (1), a filter body is arranged in the placing groove and comprises a top layer metal foil (7) and an intermediate medium layer (8), the top layer metal foil (7), the intermediate medium layer (8) and the shell (1) are tightly attached from top to bottom, microstrip lines (6) are arranged on the right side of the top layer metal foil (7) and below the top layer metal foil, straight line transition structure grooves (5) matched with the microstrip lines (6) are formed in the intermediate medium layer (8), first metal through holes (9) are formed in the top layer metal foil (7), the intermediate medium layer (8) and the shell (1) in a chiseled mode, an intermediate layer metal foil (3) is connected to the middle of the top layer metal foil (7), perturbation through holes (4) are formed in the upper end of the top layer metal foil (7), and the perturbation through holes (4) are located on the intermediate lines of the microstrip lines (6), and first metal through hole (9) and perturbation through hole (4) all run through top layer metal forming (7), intermediate dielectric layer (8) and shell (1) the structure that the zonulae occludens constitutes, the upper end of intermediate level metal forming (3) is cut and is chisel and have second metal through hole (2), and top layer metal forming (7) are connected in second metal through hole (2), the upper end of shell (1) is cut and is chisel and has a plurality of screw holes, screw hole female connection has screw rod (10), the upper end of shell (1) is cut and is chisel and have a plurality of evenly distributed's louvre (11).

2. The siw-based band control filter of claim 1, wherein: the outer end of the microstrip line (6) is fixedly connected with an SMA joint.

3. The siw-based band control filter of claim 1, wherein: the microstrip lines (6) are all SIW characteristic impedance matching microstrip lines (6) of 50 ohms.

4. The siw-based band control filter of claim 1, wherein: the diameters of the first metal through holes (9), the second metal through holes (2) and the perturbation through holes (4) are all 0.4-0.5mm, and the center distance between two adjacent first metal through holes (9) is 1 mm.

5. The siw-based band control filter of claim 1, wherein: top layer metal forming (7) adopt the copper foil, middle dielectric layer (8) adopt Rogers RT/duroid5880(tm) material and relative dielectric constant is 2.2, the thickness of middle dielectric layer (8) is 1.016mm, and the thickness of all copper foils is 0.03 mm.

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