CN212783492U

CN212783492U - Chip structure, display panel and die bonding system of display panel

Info

Publication number: CN212783492U
Application number: CN202021884847.8U
Authority: CN
Inventors: 蒲洋
Original assignee: Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
Current assignee: Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
Priority date: 2020-09-01
Filing date: 2020-09-01
Publication date: 2021-03-23
Anticipated expiration: 2030-09-01

Abstract

The utility model discloses a solid brilliant system of chip architecture, display panel, wherein, the chip architecture includes the epitaxial layer and locates electrode on the epitaxial layer, the electrode deviates from welding is passed through to the one end of epitaxial layer and is welded by the connector, one by welding at least two on the connector the chip architecture, the chip architecture still includes the reflection stratum, the reflection stratum set up in on the side surface of electrode, the reflection stratum be used for with light reflection to with adjacent the electrode contact of chip architecture on the welding. The chip structure that this application disclosed sets up the reflection stratum reflection light to on the welding, rather than passing the epitaxial layer or pierce through by the thing of being connected and shine on the welding again, reduces the light to the perpendicular incidence of being connected thing and epitaxial layer, reduces the damage.

Description

Chip structure, display panel and die bonding system of display panel

Technical Field

The utility model relates to a show technical field, especially relate to a solid brilliant system of chip architecture, display panel.

Background

At present, with the development of social science and technology, the application field of Light Emitting diodes (Light Emitting diodes) has been greatly expanded, wherein the market with the fastest growth and the most potential is the backlight application of Liquid Crystal Display (LCD), in recent years, novel display panels such as mini LED panels and Micro LED panels have appeared, in the process of manufacturing mini LED or Micro LED display devices, after LEDs are manufactured on a growth substrate, LEDs are often transferred to a connected object, and the fixing mode generally adopts a welding mode.

However, in the existing soldering process, light directly penetrates through the epitaxial layer on the LED chip or is irradiated onto the solder by the connecting object, and the epitaxial layer on the LED chip or the connecting object is often damaged.

Accordingly, the prior art is yet to be improved and developed.

SUMMERY OF THE UTILITY MODEL

In view of the above-mentioned deficiencies of the prior art, an object of the present invention is to provide a die attach system for a chip structure, a display panel, and a display panel, which aims to complete a bonding process of the chip structure without damaging an epitaxial layer or a connected object.

The technical scheme of the utility model as follows:

a chip structure comprises an epitaxial layer and electrodes arranged on the epitaxial layer, wherein one end, deviating from the epitaxial layer, of each electrode is welded with a connected object through a welding piece, and at least two chip structures are welded on one connected object. The reflection layer is used for reflecting light to the welding parts, so that the irradiation of the light to the epitaxial layer or the connected object is reduced, and further the damage to the epitaxial layer or the connected object is reduced.

In the chip structure, the reflective layer is disposed on one side of the electrode close to the epitaxial layer. The reflecting layer is far away from one end of the electrode connected with the welding part, so that light rays reflected by the chip structure are prevented from being shielded.

The chip structure, wherein the distance from the end of the reflective layer to the epitaxial layer is smaller than the distance from the end of the electrode to the epitaxial layer. When the welding part is welded, the welding part is melted into liquid with fluidity, the height of the top end of the electrode is higher than that of the reflecting layer, and the phenomenon that the welding part flows onto the reflecting layer after being melted is reduced.

In the chip structure, the reflective layer is a metal reflective layer. Silver or aluminum metal with high melting point is selected as the reflecting layer, so that the reflecting effect on light is good, and the light-emitting diode is easy to manufacture.

The chip structure is characterized in that the surface of the reflecting layer, which reflects light, comprises one or more of a plane vertical to the epitaxial layer, a plane inclined to the epitaxial layer and a concave cambered surface. The different surfaces of the reflected light can adapt to different incident lights and can be matched with an external machine for emitting the light; in addition, the concave cambered surface has a light gathering effect, so that the welding efficiency can be increased.

The utility model also discloses a display panel, wherein, display panel includes backplate, welding and as above arbitrary the chip architecture, the welding sets up the backplate with between the electrode, make through the welding the backplate with the electrode is connected. Through the mode of the reflection layer reflecting light to weld the chip structure, the whole process is carried out on one side of the back plate, the light can not irradiate the back plate, and the damage to the back plate is reduced.

The display panel, wherein the welding part is one or more of an indium metal part or a tin metal part. Indium metal and tin metal are easy to melt, and the welding effect formed after cooling is good.

The utility model also discloses a display panel's solid brilliant system, wherein, gu brilliant system includes as above arbitrary display panel.

The die bonding system of the display panel comprises a light emitter, a transfer substrate and a shading piece, wherein the light emitter is used for emitting light to the reflecting layer; the transfer substrate is arranged opposite to the back plate; the light shielding piece is arranged between the chip structure and the transfer substrate, and the orthographic projection of the chip structure on the transfer substrate is superposed with the orthographic projection of the light shielding piece on the transfer substrate. The chip structure is transferred to the back plate through the light-permeable transfer substrate and the light-impermeable shading piece, the chip structure in the welding process is protected, and the damage of light to the chip structure is reduced.

The die bonding system of the display panel is characterized in that the light shielding member comprises a chromium film. The chromium film can better absorb light, block the light and protect the chip structure.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

FIG. 1 is a schematic structural diagram of a chip structure of the present invention;

fig. 2 is a schematic structural diagram of a display panel according to the present invention;

FIG. 3 is a schematic structural diagram of three chip structures according to the present invention;

FIG. 4 is a schematic structural diagram of a die attach system and a display panel according to the present invention;

fig. 5 is a schematic structural diagram of step 1 of manufacturing a display panel according to the present invention;

fig. 6 is a schematic structural diagram of step 2 of manufacturing a display panel according to the present invention;

fig. 7 is another schematic structural diagram of step 2 of manufacturing a display panel according to the present invention;

fig. 8 is another schematic structural diagram of step 2 of manufacturing a display panel according to the present invention;

fig. 9 is a schematic structural diagram of step 3 of manufacturing a display panel according to the present invention;

fig. 10 is a schematic structural diagram of step 5 of manufacturing a display panel according to the present invention.

10, an epitaxial layer; 20. an electrode; 30. a reflective layer; 40. a welding part; 50. a connected object/back plate; 60. a light emitter; 70. transferring the substrate; 80. a light shielding member; 90. a growth substrate; 100. and (7) photoresist.

Detailed Description

In order to make the technical solution of the present invention better understood, the following figures in the embodiments of the present invention are combined to clearly and completely describe the technical solution in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

The mini LED technology and the Micro LED technology are new generation display technologies, have self-luminous display characteristics, and compared with the existing Organic Light-Emitting Diode (OLED) technology, the mini LED display device and the Micro LED display device have the advantages of higher brightness, better Light-Emitting efficiency and lower power consumption. With the continuous updating and development of the technology in the display field, the use of a mini LED display device and a Micro LED display device is increasing, in the current manufacturing process of the mini LED display device and the Micro LED display device, a mini LED chip or a Micro LED chip is manufactured on a growth substrate, and then the chip is welded on the substrate, and the welding mode is that light rays penetrate through the substrate or the chip and then irradiate the welding position for welding, so that the chip or the substrate is inevitably damaged.

Referring to fig. 1 and 2, in an embodiment of the present application, a chip structure is disclosed, which includes an epitaxial layer 10 and an electrode 20 disposed on the epitaxial layer 10, one end of the electrode 20 away from the epitaxial layer 10 is welded with a connected object 50 through a welding part 40, and at least two chip structures are welded on one connected object 50, where the chip structure further includes a reflective layer 30, the reflective layer 30 is disposed on a side surface of the electrode 20, and the reflective layer 30 is configured to reflect light to the welding part 40 in contact with the electrode 20 of an adjacent chip structure.

According to the chip structure, in the welding process, the reflecting layer 30 reflects light rays, the welding piece 40 is further heated, the chip structures are welded on the connected object 50, at least two chip structures are arranged on one connected object 50, the light rays are emitted from the gap between the adjacent chip structures and directly irradiate the welding piece 40 after being reflected by the reflecting layer 30, the epitaxial layer 10 does not need to be penetrated, the light rays are transmitted above the connected object 50, the irradiation on the connected object 50 is also avoided, and the illumination damage to the epitaxial layer 10 or the connected object 50 is reduced; in addition, the epitaxial layer 10 or the connected object 50 often has a certain obstruction to the propagation of light, and the light does not penetrate through the epitaxial layer 10 or the connected object 50 in the propagation path by obliquely entering the light, so that the loss is less, the energy loss is reduced, and the welding efficiency is improved.

Specifically, the reflective layer 30 is disposed on a side of the electrode 20 close to the epitaxial layer 10. The side of the electrode 20 far away from the epitaxial layer 10 is provided with the welding part 40, the temperature is high during welding, and the welding part 40 is melted and changed from solid to liquid and flows, so that the reflecting layer 30 is arranged close to the epitaxial layer 10 and far away from the welding part 40, and the conditions that light irradiates the reflecting layer 30 and cannot be welded or the welding part 40 is melted and then contacts the reflecting layer 30 and the like during welding are prevented.

Further, the reflective layer 30 is formed at the edge portion of the epitaxial layer 10 by an Evaporation (EV) or Physical Vapor Deposition (PVD) method.

Specifically, the electrode 20 of chip includes an input of output, and one side that deviates from the output at the input sets up the reflection stratum 30, and one side that the output deviates from the input also sets up the reflection stratum 30, and the light of following both sides directive chip structure all can be reflected by the reflection stratum 30 like this, and then the directive goes on the welding piece 40 that corresponds with the adjacent chip structure of this chip structure, melts adjacent welding piece 40. For example, two electrodes 20 are disposed on each chip, a solder part 40 is disposed on the substrate facing each electrode 20, the solder part 40 contacted by the left electrode 20 is heated by the light reflected by the reflective layer 30 on the left adjacent chip structure for soldering, and the solder part 40 contacted by the right electrode 20 is heated by the light reflected by the reflective layer 30 on the right adjacent chip structure for soldering.

Specifically, the reflective layer 30 is a metal reflective layer 30. The metal has a good light reflection effect, such as silver (Ag), aluminum (Al) and the like, can reflect light after forming the reflection layer 30, has a high melting point, is not easy to melt by illumination, is safe and stable in the use process, is always in a solid state, cannot influence the light reflection, cannot flow everywhere, maintains the structural form of the display panel, and enables the display panel to normally work.

Referring to fig. 3, the surface of the reflective layer 30 that reflects light includes one or more of a plane perpendicular to the epitaxial layer 10, a plane oblique to the epitaxial layer 10, or a concave arc surface. The light is reflected to the welding member 40, and naturally needs to be incident in a certain inclined direction, as shown in fig. 3 (a), so that a certain incident angle and a certain reflection angle are formed on a vertical plane and are obliquely emitted to the welding member 40; meanwhile, as shown in fig. 3 (b), the heating of the welding member 40 can be completed by adjusting the slope of the surface of the reflecting layer 30 that reflects light, in cooperation with the angle at which light can be incident selectively; particularly, as shown in fig. 3 (c), when the concave arc surface is provided, the concave arc surface has a converging function to the light emitted to the reflective layer 30 in parallel, so that the light emitted to the welding member 40 is converged, the light intensity per unit area is increased, the melting of the welding member 40 is accelerated, and the working efficiency is further improved.

Further, the distance from the top end of the reflective layer 30 to the epitaxial layer 10 is smaller than the distance from the top end of the electrode 20 to the epitaxial layer 10. Since the reflective layer 30 is provided on the surface of the electrode 20, the end of the electrode 20 is connected to the solder 40, and the solder 40 is melted and then wrapped around the end of the electrode 20, the height of the electrode 20 is set to be a little higher, preventing the reflective layer 30 from interfering with the connection between the electrode 20 and the solder 40.

Referring to fig. 2, an embodiment of the present invention further discloses a display panel, wherein the display panel includes a back plate 50, a welding member 40, and the chip structure as described above, the welding member 40 is disposed between the back plate 50 and the electrode 20, and the back plate 50 is connected to the electrode 20 by welding. In the present embodiment, the back plate 50 is the connected object 50, and in the field of display panels, the back plate 50 includes a driving back plate 50.

Specifically, the welding member 40 is one or more of an indium (In) metal member or a tin (Sn) metal member, both of which are easily melted, and the welding effect formed after cooling is good, so that the chip structure can be fixed well.

Referring to fig. 4, an embodiment of the present invention further discloses a die bonding system of a display panel, wherein the die bonding system includes any one of the display panels described above; specifically, the die bonding system further comprises a light emitter 60, a transfer substrate 70 and a light shielding member 80, wherein the light shielding member 80 comprises a chromium film; the light emitters 60 are located above the display panel, at least two light emitters 60 are provided, and at least two light emitters 60 are oppositely disposed at two sides above the display panel and are used for emitting opposite light to the reflective layer 30; the transfer substrate 70 is disposed opposite to the back plate 50; the light shielding member 80 is disposed between the chip structure and the transfer substrate 70, and an orthographic projection of the chip structure on the transfer substrate 70 coincides with an orthographic projection of the light shielding member 80 on the transfer substrate 70. The die bonding system is provided with a light shading piece 80, when the light emitter 60 penetrates through the transfer substrate 70, the part provided with the light shading piece 80 is opaque, so that a chip structure shaded by the light shading piece can be protected, and illumination can only irradiate to the reflecting layer 30 from the space between the light shading pieces; in addition, the light shielding member 80 may be made of a reflective metal, such as silver (Ag), aluminum (Al), or the like, to reflect light irradiated onto the light shielding member 80, thereby protecting the chip structure.

Specifically, the light emitter 60 according to the embodiments of the present disclosure includes a laser emitter. The laser has good gathering property and high strength, and can heat the welding part 40 quickly and accelerate the melting process.

The utility model discloses a preparation of display panel in an embodiment includes following step:

1. as shown in fig. 5, an LED epitaxial chip is grown on a growth substrate 90 such as sapphire, gallium arsenide, etc., and an electrode 20, etc. is fabricated to complete the chip structure;

2. as shown in fig. 6, a photoresist 100 is coated and patterned by photolithography; then, as shown in fig. 7, a layer of high-reflectivity metal, such as silver or aluminum, is formed by Evaporation (EV) or Physical Vapor Deposition (PVD) to form a reflective layer 30; then, the photoresist is stripped off, as shown in FIG. 8, so as to form the required metal pattern;

3. as shown in fig. 9, the chip structure is transferred onto a second temporary substrate, i.e. a transfer substrate 70, by a conventional bulk transfer method, such as electrostatic, van der waals force, etc., the transfer substrate 70 is provided with a light shielding member 80 at a position corresponding to the chip structure, which is slightly wider than the bottom of the chip structure, so as to ensure that the chip structure, such as a chrome film, etc., is not irradiated during light irradiation, and the rest positions are transparent; transferring the substrate to a corresponding position on the substrate by using a transfer substrate 70, wherein the corresponding position on the substrate is prepared with indium or tin for welding in advance;

4. irradiating by light beams, wherein the irradiation direction is the inclined angle, and the irradiation angle is adjusted to ensure that the light beams are irradiated to the reflecting layers 30 at the two sides of the electrode 20 and then reflected to the welding parts 40 at the adjacent positions; the light is emitted from two directions, which respectively correspond to the welding parts 40 under the two electrodes 20; heating and melting welding metal under the action of illumination, thereby realizing welding bonding;

5. as shown in fig. 10, after the soldering is completed, the transfer substrate 70 is peeled off to complete the die bonding.

It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the present invention is limited only by the appended claims.

The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.

Claims

1. The chip structure is characterized by further comprising a reflecting layer, wherein the reflecting layer is arranged on the side surface of the electrode, and is used for reflecting light rays to the welding parts which are adjacent to the electrode of the chip structure and in contact with the electrode.

2. The chip structure according to claim 1, wherein the reflective layer is disposed on a side of the electrode adjacent to the epitaxial layer.

3. The chip structure according to claim 2, wherein a distance from an end of the reflective layer to the epitaxial layer is smaller than a distance from an end of the electrode to the epitaxial layer.

4. The chip structure according to claim 1, wherein the reflective layer is a metallic reflective layer.

5. The chip structure according to claim 1, wherein the surface of the reflective layer that reflects the light rays comprises one or more of a plane perpendicular to the epitaxial layer, a plane oblique to the epitaxial layer, and a concave arc surface.

6. A display panel comprising a back plate, a solder member, and the chip structure according to any one of claims 1 to 5, wherein the solder member is disposed between the back plate and the electrode, and the back plate is connected to the electrode by soldering.

7. The display panel of claim 6, wherein the solder is one or more of an indium metal or a tin metal.

8. A die bonding system for a display panel, wherein the die bonding system comprises the display panel according to any one of claims 6 to 7.

9. The die bonding system for display panels according to claim 8, further comprising:

a light emitter for emitting light to the reflective layer;

a transfer substrate disposed opposite to the back plate;

and the shading piece is arranged between the chip structure and the transfer substrate, and the orthographic projection of the chip structure on the transfer substrate is superposed with the orthographic projection of the shading piece on the transfer substrate.

10. The die bonding system of claim 9, wherein the light shielding member comprises a chrome film.