CN212727502U

CN212727502U - Circuit structure for improving LED luminous efficiency

Info

Publication number: CN212727502U
Application number: CN202021872569.4U
Authority: CN
Inventors: 蒋夏静; 楼鸿玮
Original assignee: Migang New Materials Technology Shanghai Co ltd
Current assignee: Migang New Materials Technology Shanghai Co ltd
Priority date: 2020-09-01
Filing date: 2020-09-01
Publication date: 2021-03-16
Anticipated expiration: 2030-09-01

Abstract

The utility model discloses an improve LED luminous efficiency's circuit structure provides this scheme to the problem that the light efficiency is low among the prior art. The SMD lamp bead comprises an SMD support, more than N (N is more than or equal to 1) GaN-based blue-light LED chips are arranged on the SMD support, the positive and negative electrodes of the GaN-based blue-light LED chips are respectively LED out of the bottom of the SMD support through gold wire welding to form wiring terminals, and the SMD support is provided with a fluorescent powder coating for packaging all the GaN-based blue-light LED chips; the LED lamp also comprises a current limiting element connected in series between the SMD lamp beads and the driving unit or a constant current source output by adopting an LED driving power supply for driving the SMD lamp beads, and the working current of the lamp beads is set to be reduced to be lower than 45% of the rated current of the chip, so that the lighting effect is improved by more than 30%. The LED light source has the advantages of improving the luminous efficiency of the LED light source, improving the electro-optic conversion efficiency and prolonging the service life of the LED.

Description

Circuit structure for improving LED luminous efficiency

Technical Field

The utility model relates to a LED circuit structure.

Background

As a novel solid-state lighting device, the light-emitting diode LED can theoretically achieve ultra-high light-emitting efficiency and ultra-long light-emitting life (more than 10 ten thousand hours). Meanwhile, the LED lamp also has the advantages of environmental protection, high response speed, small volume, rich colors and the like, and is an ideal and reliable choice for the third-generation illumination light source. The luminous efficiency of the GaN-based LED is a winning treasure in the solid-state lighting trend towards general lighting.

The luminous efficiency refers to the ratio of the total luminous flux emitted by a light source to the electric power (watt) consumed by the light source, and is called the luminous efficiency of the light source, and the unit is lumen/watt (lm/W), which is the most important technical parameter for evaluating the electricity utilization efficiency of an electric light source. The higher the luminous efficiency value is, the stronger the capability of the lighting fixture to convert electric energy into light energy is, i.e. the stronger the energy saving performance of the lighting fixture is under the condition of providing the same brightness. The more powerful, i.e. the higher the brightness, the lighting fixture is at the same power. The LED has shown a great application prospect in the field of solid-state lighting, however, in current practical applications, the LED circuit structure is that the driving unit directly outputs rated current to the LED to make it work. The luminous efficiency of the light source is only about 150lm/W, and if further popularization is desired, the luminous efficiency of the light source needs to be further improved, energy consumption is reduced, and economic benefits are improved.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide an improve LED luminous efficiency's circuit structure to solve the problem that above-mentioned prior art exists.

The utility model relates to a circuit structure for improving LED luminous efficiency, which comprises an SMD lamp bead and a driving unit;

the driving unit is used for outputting rated current of the SMD lamp bead;

the SMD lamp bead comprises an SMD support, N (N is more than or equal to 1) GaN-based blue-light LED chips are arranged on the SMD support, the positive and negative poles of the GaN-based blue-light LED chips are respectively LED out of the bottom of the SMD support through gold wire welding to form wiring terminals, and the SMD support is provided with a fluorescent powder coating for packaging all the GaN-based blue-light LED chips;

the LED lamp is characterized in that the current limiting element is connected between the SMD lamp bead and the driving unit in series, and the current limiting element can be directly replaced by a constant current source output by an LED driving power supply to drive the SMD lamp bead.

The current limiting element is a current limiting resistor or a constant current source output by an LED driving power supply.

The number of the GaN-based blue light LED chips N (N is more than or equal to 1) is multiple, and the GaN-based blue light LED chips are connected in series and/or in parallel.

A circuit structure for improving LED luminous efficiency, its advantage lies in, improves the luminous efficiency of LED light source, improves electro-optic conversion efficiency, beneficial effect has several aspects: (1) the chip is prevented from working under the condition of large current, and the light attenuation resistance and the thermal stability of the LED are improved; (2) the light source has high luminous efficiency, high luminous intensity of the lamp beads, high power density and strong light intensity output, and can effectively improve the energy utilization rate and achieve the effects of energy conservation and emission reduction; (3) the service life of the LED light source can be prolonged through the novel circuit structure.

Drawings

Fig. 1 is a plan view of the circuit structure for improving the light emitting efficiency of the LED of the present invention.

Fig. 2 is a bottom view of the circuit structure for improving the light emitting efficiency of the LED of the present invention.

Fig. 3 is a graph of light effect versus current.

Reference numerals: the LED chip comprises a 1-SMD support, a 2-GaN-based blue LED chip, a 3-gold thread and a 4-fluorescent powder coating.

Detailed Description

As shown in FIGS. 1-2, a circuit structure for improving LED luminous efficiency comprises an SMD lamp bead and a driving unit. The driving unit is used for outputting the rated current of the SMD lamp bead. The SMD lamp pearl include the SMD support, be equipped with N (N is greater than or equal to 1) a GaN base blue light LED chip on the SMD support, the positive negative pole of GaN base blue light LED chip draws forth SMD support bottom through the gold thread respectively and forms binding post, the SMD support be equipped with the phosphor powder coating of all GaN base blue light LED chips of encapsulation. The LED lamp also comprises a current limiting element serially connected between the SMD lamp bead and the driving unit. The actual operating current is made lower than the rated current by means of the current limiting element. The current limiting element is a current limiting resistor or a constant current source which is output by adopting an LED driving power supply.

The GaN-based blue light LED chips are multiple, and the GaN-based blue light LED chips are connected in series and/or in parallel.

An SMD support is adopted, and N (N is more than or equal to 1) GaN-based blue LED chips with rated power of 0.2W or 0.5W or 0.75W or 1W and the like are placed in the support. The GaN-based blue LED chip can be connected in different ways, such as in a combination of serial connection and/or parallel connection. And in the packaging process, bonding the chip and the pins by using gold wires, and coating fluorescent powder to form the SMD lamp beads.

As shown in the table, the rated current of the 0.5W chip is 150mA, the data show that the relation between the photoelectric parameters and the current of the GaN-based LED chip, under the operation of rated large current, the luminous efficiency of the light source is only about 150lm/W, and the service life is greatly reduced. According to the relation of the influence each other of electric current and light efficiency, as shown in fig. 3, the utility model discloses a current drive SMD lamp pearl that is less than rated current carries out work, makes the operating current of each chip when actual work reduce to use below 45% of rated current, discovers light efficiency (lm/W) of LED light source and has improved more than 30% through experimental test.

Various other modifications and changes may be made by those skilled in the art based on the above-described technical solutions and concepts, and all such modifications and changes are intended to fall within the scope of the claims.

Claims

1. A circuit structure for improving the luminous efficiency of an LED comprises an SMD lamp bead and a driving unit;

the driving unit and the current limiting element are used for outputting the working current of the SMD lamp bead;

the SMD lamp bead comprises an SMD support (1), N GaN-based blue-light LED chips (2) are arranged on the SMD support, N is larger than or equal to 1, the positive and negative electrodes of the GaN-based blue-light LED chips are respectively welded and LED out of the bottom of the SMD support through gold wires (3) to form wiring terminals, so that the positive and negative electrodes of the lamp bead are formed, and the SMD support is provided with a fluorescent powder coating (4) for packaging all the GaN-based blue-light LED chips;

2. The circuit structure of claim 1, wherein the current limiting element is a current limiting resistor or a constant current source for driving the power output of the LED.

3. The circuit structure for improving the luminous efficiency of an LED according to claim 1, wherein the GaN-based blue LED chips are connected in series and/or in parallel.