CN212625196U - Ceramic dielectric chip with outer chamfer dish-shaped structure and ceramic capacitor - Google Patents
Ceramic dielectric chip with outer chamfer dish-shaped structure and ceramic capacitor Download PDFInfo
- Publication number
- CN212625196U CN212625196U CN202021496750.XU CN202021496750U CN212625196U CN 212625196 U CN212625196 U CN 212625196U CN 202021496750 U CN202021496750 U CN 202021496750U CN 212625196 U CN212625196 U CN 212625196U
- Authority
- CN
- China
- Prior art keywords
- ceramic dielectric
- electrode
- ceramic
- groove
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Ceramic Capacitors (AREA)
Abstract
The utility model provides a ceramic dielectric chip and a ceramic capacitor with an outer chamfer dish-shaped structure, which comprises a ceramic dielectric ceramic body and a pair of electrodes arranged on the front and the back of the ceramic dielectric ceramic body, wherein the main body of the ceramic dielectric ceramic body is cylindrical; the front and back surfaces of the ceramic dielectric body form symmetrical grooves corresponding to the coverage areas of a pair of electrodes, and the electrodes are electrode coatings formed on the bottom surfaces of the grooves by a sputtering process; the top surface of the groove is higher than the outer edge of the ceramic dielectric ceramic body, so that the outer edge of the ceramic dielectric ceramic body forms a chamfer structure. Compared with the prior art, the electrode is an electrode coating formed on the bottom surface of the groove through a sputtering process, the periphery is high, edge breakdown is prevented, the electrodes at two ends of the chip can be oppositely aligned through the sputtering mask, the maximum electrode opposite area is achieved, the maximum capacitance is obtained, the problem of poor voltage resistance of a product caused by electrode asymmetry and the like can be effectively solved by enabling the electric field to be in the most uniform state due to the opposite alignment of the electrodes.
Description
Technical Field
The utility model belongs to the technical field of the condenser, especially, relate to ceramic dielectric chip and ceramic capacitor who has outer chamfer dish structure.
Background
In recent years, with the rapid development of the electronic component industry, the size and thickness of electronic products tend to be miniaturized as a whole, and the requirements of electronic equipment are higher and higher, and the breakdown strength is one of the main parameters of ceramic dielectric capacitors, which is mainly determined by the material (formula) of the product, but also related to the electrode form and the packaging material thereof, especially when the electrodes are asymmetric, the electric field is not uniform, and the defect can cause the voltage resistance reduction or poor voltage resistance of the capacitor.
Most of the existing ceramic dielectric capacitors are round plates or round sheets, and as products tend to be miniaturized and have reduced sizes, the requirements on dielectric materials are high, and the dielectric constant K value of the required materials is high; in the production practice, quite a lot of product breakdown failures are not caused by poor characteristics of the dielectric material, but are caused by process or appearance defects, such as asymmetric and non-concentric front and back electrodes often appearing in silver electrode printing, irregular upper and lower electrode pairs caused by offset, small effective area of the silver surface and uneven electric field distribution. The edge effect causes the problem that the product is broken down under high pressure conditions from the edge by ionizing air at high pressure.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the utility model provides a ceramic dielectric chip and ceramic capacitor with outer chamfer dish-shaped structure, its technical scheme as follows:
the ceramic dielectric chip with the outer chamfer disc-shaped structure comprises a ceramic dielectric ceramic body and a pair of electrodes arranged on the front side and the back side of the ceramic dielectric ceramic body, wherein the main body of the ceramic dielectric ceramic body is cylindrical; the front and back surfaces of the ceramic dielectric body form symmetrical grooves corresponding to the coverage areas of the pair of electrodes, and the electrodes are electrode coatings formed on the bottom surfaces of the grooves through a sputtering process; the top surface of the groove is higher than the outer edge of the ceramic dielectric ceramic body, so that the outer edge of the ceramic dielectric ceramic body forms a chamfer structure.
Preferably, the inner side surface of the groove is an inclined surface, and an included angle between the inclined surface and the bottom surface of the groove is larger than 90 degrees.
Preferably, the outer edge of the ceramic dielectric body is higher than the bottom surface of the groove.
Preferably, the bottom surface of the groove and the electrode plane are both circular.
Preferably, the electrode plating layer is a copper electrode or a copper indium chromium alloy electrode, and an included angle between the inclined plane and the bottom surface of the groove is 160 degrees.
Preferably, the thickness of the electrode coating is 0.8-1.0 micron.
Preferably, the bottom surface of the groove and the middle area of the electrode plane form a bulge, and the side surface of the bulge is in arc transition connection with the corresponding peripheral areas of the bottom surface of the groove and the electrode plane.
Preferably, the diameter D of the protrusion is 1/4 of the outer diameter D of the ceramic dielectric chip with the disc-shaped structure.
The utility model also provides a ceramic capacitor, including ceramic dielectric chip, electrode lead and insulating encapsulated layer, ceramic dielectric chip is for having the ceramic dielectric chip of outer chamfer dish-shaped structure.
Compared with the prior art, the utility model discloses following beneficial effect has:
the utility model discloses well ceramic dielectric porcelain body positive and negative forms symmetrical recess corresponding to the coverage area of a pair of electrode, the electrode is the electrode coating that forms through sputtering technology in the recess bottom surface, the peripheral height prevents the edge breakdown, the sputter mask can make chip both ends electrode just right, reach the biggest electrode just right the area, thereby obtain the biggest electric capacity, just right also make the electric field reach the most even state of electrode can effectually solve the product withstand voltage bad scheduling problem that the electrode asymmetry caused (the electric field homogeneity has been guaranteed to the symmetry of electrode, can eliminate marginal effect to a certain extent, avoid the product to puncture from the edge); the top surface of the groove is higher than the outer side edge of the ceramic dielectric ceramic body, so that the outer side edge of the ceramic dielectric ceramic body forms a chamfer structure, and the outer side edge of the chip forms an outer side chamfer, so that the edge is not too sharp, and the edge is not easy to break after colliding with.
Furthermore, the inner side surface of the groove is an inclined surface, the included angle between the inclined surface and the bottom surface of the groove is 160 degrees, the inner side surface of the groove and the bottom surface of the groove form a certain angle, certain buffering effect can be achieved when the porcelain powder is filled, pressure impact caused by a mould when a product is formed is reduced, demoulding is easy, and the product is not easy to crack after sintering.
Furthermore, the electrode plating layer is a copper electrode or a copper indium chromium alloy electrode, and the ohmic contact formed by selectively sputtering copper and the copper alloy electrode is higher in capacitance than a capacitor manufactured by the traditional printing sintering silver electrode. Particularly, the bottom layer is sputtered with copper, chromium and indium alloy, the surface is sputtered with pure copper, the chromium material of the bottom layer enhances the adhesive force, the indium material achieves the effect of ohmic contact, and the copper material of the surface layer ensures the conductivity and the weldability.
Furthermore, the bottom surface of the groove and the middle area of the electrode plane form a bulge, the side surface of the bulge is in arc transition connection with the bottom surface of the groove and the corresponding peripheral area of the electrode plane, the diameter D of the bulge is 1/4 of the outer diameter D of the ceramic dielectric chip with the disc-shaped structure, the gap between the electrode and the lead can be eliminated, the lead forming machine die does not need to be changed, the lead is universal with the lead of the conventional traditional ceramic capacitor, the area of the electrode can be increased by the middle bulge part, and the capacitance can be slightly increased compared with the capacitance without the bulge structure.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
FIG. 1 is a specific process flow diagram of the present invention;
FIG. 2 is a schematic view of a ceramic dielectric chip with an outer chamfer disc structure according to the present invention,
wherein, 1-ceramic dielectric ceramic body; 2-electrode.
FIG. 3 is a schematic structural view of a disc-shaped ceramic dielectric chip according to the present invention,
wherein, 1-ceramic dielectric ceramic body; 2-electrode.
FIG. 4 is a schematic view of a dished ceramic dielectric chip with a concave-convex structure according to the present invention,
wherein, 1-ceramic dielectric ceramic body and 2-electrode.
FIG. 5 is a schematic diagram showing the relationship between the disk-shaped ceramic dielectric chip and the sputtering mask provided by the present invention,
1-ceramic dielectric ceramic body, 2-electrode and 3-sputtering mask.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
The utility model provides a technical scheme as follows: the ceramic dielectric chip with the outer chamfer disc-shaped structure comprises a ceramic dielectric ceramic body and a pair of electrodes arranged on the front side and the back side of the ceramic dielectric ceramic body, wherein the main body of the ceramic dielectric ceramic body is cylindrical; the front and back surfaces of the ceramic dielectric body form symmetrical grooves corresponding to the coverage areas of the pair of electrodes, and the electrodes are electrode coatings formed on the bottom surfaces of the grooves through a sputtering process; the top surface of the groove is higher than the outer edge of the ceramic dielectric ceramic body, so that the outer edge of the ceramic dielectric ceramic body forms a chamfer structure. The inner side surface of the groove is an inclined surface, and the included angle between the inclined surface and the bottom surface of the groove is larger than 90 degrees. The outer edge of the ceramic dielectric body is higher than the bottom surface of the groove. The bottom surface of the groove and the plane of the electrode are both circular. The electrode plating layer is a copper electrode or a copper indium chromium alloy electrode. The thickness of the electrode coating is 0.8-1.0 micron. The bottom surface of the groove and the middle area of the electrode plane form a bulge, and the side surface of the bulge is in arc transition connection with the corresponding peripheral areas of the bottom surface of the groove and the electrode plane. The diameter D of the bulge is 1/4 of the outer diameter D of the ceramic dielectric chip with the disc-shaped structure.
The utility model also provides a ceramic capacitor, including ceramic dielectric chip, electrode lead and insulating encapsulated layer, ceramic dielectric chip is for having the ceramic dielectric chip of outer chamfer dish-shaped structure.
The present invention is further detailed by the following embodiments, fig. 1 is a specific process flow diagram of the present invention, as shown in fig. 1:
manufacturing ceramic dielectric chip with specification of Y5UY1400VAC332M, and determining the outer diameter of the product according to the 332M capacitance data in the specification
Obtaining the outer diameter of the dish-shaped die according to the shrinkage rate of the Y5U porcelain powder of the product
The diameter of the corresponding sputtering copper electrode mask (see A in figure 5) is 8.7 mm-2 times the diameter of the product, namely the width of the raised part at the edge is 1.1 mm-7.6 mm, namely D-2(T + N) in figures 2, 3 and 4. And determining that the thickness of the inner ring of the dish-shaped product is not less than 1.5mm according to the pressure resistance data of Y1400VAC in the specification, and calculating the thickness of the inner ring of the green compact during molding according to the shrinkage rate to be not less than 1.75 mm.
The porcelain powder is selected, under the condition that the outer diameter of the product, the diameter of the copper electrode mask and the thickness of the product are basically determined, the dielectric constant of the required porcelain powder is calculated to be about 9450, and therefore, the Y5U porcelain powder with the dielectric constant of 9400-9500 is selected.
And (3) forming, namely, mounting a disc-shaped die with the outer diameter phi of 10mm on a rotary press, controlling the thickness of a formed green body at the inner ring part of the disc-shaped die to be 1.75 +/-0.02 mm, controlling the thickness of a formed green body at the edge part to be 2.00 +/-0.02 mm, controlling the weight of 3 pieces to be 1.665-1.695 g, controlling the unevenness to be less than 0.02mm, and pressing the die without the defects of layering, edge peeling, cracking and the like.
And (4) swinging the sheet, putting the green body into a swinging plate by using a swinging plate with the diameter of 11mm, and putting the product into a burning bearing plate by matching with a swinging pipe and tweezers.
And (3) sintering, namely sintering the sintering bearing plate filled with the product in a tunnel furnace at the speed of 28 minutes per plate, at the sintering temperature of 1290 +/-10 ℃ and in the high-temperature region for 4 hours.
And (4) testing the performance of the sintered ceramic body, measuring the diameter and thickness of the product, electric capacity, loss, breakdown voltage and other performance parameters according to the requirements of the sintering inspection regulations, and judging whether the product is qualified according to the standards.
Sputtering copper electrode, sputtering copper, chromium and indium alloy on the bottom layer, sputtering pure copper on the surface, and the film thickness is 0.8-1.0 micron.
The chip performance test measures the product diameter, thickness, electric capacity, loss, breakdown voltage and other performance parameters according to the requirements of chip inspection regulations, and judges whether the product is qualified or not according to the standards.
The breakdown voltages of the disc-shaped ceramic capacitor and the conventional ceramic capacitor are compared with the breakdown voltages of the products of the same specification as given in the following table 1:
TABLE 1
Fig. 2 is a schematic view of the ceramic dielectric chip with the outer-chamfer disc-shaped structure provided by the utility model, as shown in fig. 2: wherein 1 is a ceramic dielectric porcelain body, 2 is an electrode, D is an outer diameter, H is a total thickness, H is an edge convex part height, S is a dish-shaped inner chamfer, N is an inner chamfer width, T is an edge convex part width, M is an outer chamfer height, P is an outer chamfer width, and W is an outer chamfer transition part width.
Fig. 3 is a schematic structural view of the disc-shaped ceramic dielectric chip provided by the present invention, as shown in fig. 3: wherein 1 is a ceramic dielectric ceramic body, 2 is an electrode, D is an outer diameter, H is a total thickness, H is a height of an edge convex part, S is a dish-shaped inner chamfer, N is a width of the inner chamfer, and T is a width of the edge convex part.
Fig. 4 is a schematic view of the dished ceramic dielectric chip with concave-convex structure provided by the present invention, as shown in fig. 4: 1 is a ceramic dielectric ceramic body, 2 is an electrode, D is an outer diameter, H is a total thickness, H is a height of an edge convex part, S is a dish-shaped inner chamfer, N is a width of the inner chamfer, T is a width of the edge convex part, and D is a diameter of the inner convex part.
The ceramic dielectric chip in the embodiment is a component forming a ceramic capacitor, after an electrode part of the ceramic dielectric chip is welded with a lead, a layer of insulating encapsulating material is wrapped outside the ceramic dielectric chip to obtain a complete ceramic capacitor, the lead is generally a 0.3-1.5mm tinned copper wire or tinned steel wire, the position relation between the lead and the chip is in a parallel state, the lead is welded at the middle part of the chip, a gap exists between the lead and the electrode due to a concave structure between the four protrusions and the middle part, certain obstacle is caused to welding, and the welding is not firm. In the structure shown in fig. 4, the height of the middle convex part is equal to that of the convex parts on the periphery, the diameter D of the convex part is about 1/4 of the outer diameter D of the chip, and the convex parts are in transition connection with the circular arc of the bottom surface of the chip. The intermediate raised portions also increase the electrode area and the capacitance is increased over the structure without the raised portions.
FIG. 5 is a schematic diagram of the relationship between the position of the disc-shaped ceramic dielectric chip and the position of the sputtering mask, as shown in FIG. 5: 1 is ceramic dielectric ceramic body, 2 is electrode, 3 is sputtering mask, A is diameter of sputtering mask and diameter of electrode. The mask is made of metal material, each set of upper and lower two pieces, each piece is arranged with a plurality of grooves, the diameter of each groove is slightly larger than the outer diameter of the chip by about 0.1-0.15mm, just one chip can be placed, after the chip is placed in each groove, the other mask is buckled, four corners are fixed by screws, the mask is suspended in the sputtering machine, and the electrode can be sputtered after starting up.
To sum up, the mould designs into the high shape in middle low circumferential edge reason, the product both ends that make the suppression are the dish, the high edge breakdown that prevents of dish periphery, edge chamfer makes the edge be unlikely to too sharp, prevent that the collision from causing edge defect in the production process, the sputtering mask hole diameter is equivalent with dish bottom diameter, the electrode spills over the product edge when preventing to sputter, copper and copper alloy are chooseed for use to the electrode material, bottom sputtering chromium reinforcing adhesion, the indium that sputters reaches ohmic contact's effect, the copper is sputtered on the surface layer, assurance electric conductivity and solderability.
The utility model provides a dish-shaped structure ceramic dielectric chip, bellied edge can prevent effectively around the chip because the edge breakdown that edge effect caused under high-pressure operating condition, the chip electrode is made by sputtering technology, the sputtering mask can make chip both ends electrode just right, it is just right to the area to reach the biggest electrode, thereby obtain the biggest electric capacity, just also making the electric field reach the withstand voltage bad scheduling problem of product that the most even state can effectual solution electrode asymmetry cause of electrode, copper and copper are chooseed for use to sputtering technology electrode material, indium, chromium alloy, chromium material chooses for use can make the sputtering electrode obtain higher adhesive force, the material indium can make electrode and porcelain body form ohmic contact, copper has good electric conductivity weldability. Compared with the non-ohmic contact of the traditional printing silver firing process of the ceramic capacitor, the non-ohmic contact of the electrode and the ceramic body has the advantages that a layer of glass phase is formed between the ceramic body and the electrode by the non-ohmic contact, the thickness of a dielectric layer is increased by the layer of glass phase, the thickness of the dielectric layer is inversely proportional to the capacitance according to the basic principle of the capacitor, so that the ohmic contact of sputtered copper and copper alloy electrodes is higher than the capacitance of the capacitor manufactured by the traditional printing silver firing electrode, the thickness and the diameter of the capacitor ceramic body with the same capacitance are smaller than those of the capacitor manufactured by the traditional method, the miniaturization of the product is realized, the material cost is saved, the sputtered copper electrode replaces the silver firing electrode, the base metal replaces the precious metal, and the non-ohmic contact has certain.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.
Claims (9)
1. The ceramic dielectric chip with the outer chamfer disc-shaped structure comprises a ceramic dielectric ceramic body and a pair of electrodes arranged on the front side and the back side of the ceramic dielectric ceramic body, wherein the main body of the ceramic dielectric ceramic body is cylindrical; the method is characterized in that: the front and back surfaces of the ceramic dielectric body form symmetrical grooves corresponding to the coverage areas of the pair of electrodes, and the electrodes are electrode coatings formed on the bottom surfaces of the grooves through a sputtering process; the top surface of the groove is higher than the outer edge of the ceramic dielectric ceramic body, so that the outer edge of the ceramic dielectric ceramic body forms a chamfer structure.
2. The ceramic dielectric chip with the outer chamfered dish structure of claim 1, wherein: the inner side surface of the groove is an inclined surface, and the included angle between the inclined surface and the bottom surface of the groove is larger than 90 degrees.
3. The ceramic dielectric chip with the outer chamfered dish structure of claim 1, wherein: the outer edge of the ceramic dielectric body is higher than the bottom surface of the groove.
4. The ceramic dielectric chip with the outer chamfered dish structure of claim 1, wherein: the bottom surface of the groove and the plane of the electrode are both circular.
5. The ceramic dielectric chip with the outer chamfered dish structure of claim 2, wherein: the electrode plating layer is a copper electrode or a copper indium chromium alloy electrode, and the included angle between the inclined plane and the bottom surface of the groove is 160 degrees.
6. The ceramic dielectric chip with the outer chamfered dish structure of claim 1, wherein: the thickness of the electrode coating is 0.8-1.0 micron.
7. The ceramic dielectric chip with the outer chamfered dish structure of claim 1, wherein: the bottom surface of the groove and the middle area of the electrode plane form a bulge, and the side surface of the bulge is in arc transition connection with the corresponding peripheral areas of the bottom surface of the groove and the electrode plane.
8. The ceramic dielectric chip with the outer chamfered dish structure of claim 7, wherein: the diameter D of the bulge is 1/4 of the outer diameter D of the ceramic dielectric chip with the disc-shaped structure.
9. A ceramic capacitor comprising a ceramic dielectric chip, an electrode lead and an insulating encapsulating layer, wherein the ceramic dielectric chip is the ceramic dielectric chip with an outer chamfered dish structure of claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021496750.XU CN212625196U (en) | 2020-07-24 | 2020-07-24 | Ceramic dielectric chip with outer chamfer dish-shaped structure and ceramic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021496750.XU CN212625196U (en) | 2020-07-24 | 2020-07-24 | Ceramic dielectric chip with outer chamfer dish-shaped structure and ceramic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212625196U true CN212625196U (en) | 2021-02-26 |
Family
ID=74719505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021496750.XU Active CN212625196U (en) | 2020-07-24 | 2020-07-24 | Ceramic dielectric chip with outer chamfer dish-shaped structure and ceramic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212625196U (en) |
-
2020
- 2020-07-24 CN CN202021496750.XU patent/CN212625196U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8711545B2 (en) | Multilayered ceramic electronic component and fabrication method thereof | |
| WO2007039983A1 (en) | Multilayer electronic component | |
| CN212625195U (en) | Ceramic dielectric chip with surface concave-convex structure and ceramic capacitor | |
| CN106782953A (en) | A kind of piezoresistor and manufacturing process | |
| CN104167290A (en) | Concave dual-electrode integrated chip high-voltage ceramic capacitor and manufacturing process thereof | |
| TWI530579B (en) | Electrode element with pretreatment layer and preparation method thereof | |
| CN212625196U (en) | Ceramic dielectric chip with outer chamfer dish-shaped structure and ceramic capacitor | |
| CN212725023U (en) | Ceramic dielectric chip with dish-shaped structure and ceramic capacitor | |
| JP3254399B2 (en) | Multilayer chip varistor and method of manufacturing the same | |
| JP2014239198A (en) | Chip array resistor and manufacturing method therefor | |
| CN111755246A (en) | Ceramic dielectric chip with outer chamfer disc-shaped structure, capacitor and preparation method | |
| CN201196910Y (en) | Packaging body used for sheet-type multilayer ceramic capacitor and sheet-type multi-layer piezoresistor | |
| KR20130060503A (en) | Laminated ceramic electronic parts and fabrication method thereof | |
| KR970009772B1 (en) | Multi-layer capacitor & manufacturing method for the same | |
| US6163245A (en) | Nonlinear resistor with electrodes formed by plasma spraying | |
| CN102800475B (en) | Vacuum sputtering multilayer metallic electrode disk ceramic capacitor and preparation method thereof | |
| CN105845299A (en) | Preparation method of zinc oxide pressure-sensitive resistor | |
| CN215103499U (en) | Target backboard | |
| JP4637440B2 (en) | Manufacturing method of ceramic element | |
| CN109256247A (en) | The ceramic matrix and varistor of varistor | |
| CN210743796U (en) | Electrode device of high-voltage pulse ceramic capacitor | |
| CN112289532B (en) | Method for preparing nanocrystalline thin film electrode by using copper alloy as material and application | |
| CN110571054B (en) | Electrode device of high-voltage pulse ceramic capacitor | |
| CN106910626A (en) | A kind of double concave high voltage ceramic capacitor and manufacturing process | |
| CN205428613U (en) | A multilayer composite metal electrode for electronic components |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Jiang Xiaoming Inventor after: Wang Qin Inventor after: Yao Fei Inventor after: Ma Yongxiang Inventor after: Han Amin Inventor before: Jiang Xiaoming Inventor before: Yao Fei Inventor before: Ma Yongxiang Inventor before: Han Amin |