CN212609550U - MEMS (micro-electromechanical systems) cross line and microwave device - Google Patents
MEMS (micro-electromechanical systems) cross line and microwave device Download PDFInfo
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- CN212609550U CN212609550U CN202020569567.1U CN202020569567U CN212609550U CN 212609550 U CN212609550 U CN 212609550U CN 202020569567 U CN202020569567 U CN 202020569567U CN 212609550 U CN212609550 U CN 212609550U
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Abstract
The utility model provides a MEMS cross line and microwave device, belonging to the technical field of wireless communication, comprising a first transmission line structure, a second transmission line structure and an MEMS bridge; the second transmission line structure is connected with the first transmission line structure through the interconnection layer to realize grounding, and the signal transmission direction of the second transmission line structure is crossed with the signal transmission direction of the first transmission line structure; the MEMS bridge is arranged between the first transmission line structure and the second transmission line structure and used for signal isolation between the first transmission line structure and the second transmission line structure. The utility model provides a MEMS crossing line because the MEMS bridge does not participate in signal transmission, only has the isolation function, can effectively reduce the cost of manufacture of MEMS bridge, and then reduces the cost of manufacture of device, improves the isolation between the different signals, avoids the interference between the different signals to improve signal transmission's precision.
Description
Technical Field
The utility model belongs to the technical field of wireless communication, more specifically say, relate to a MEMS crossing line and microwave device.
Background
In multi-port microwave devices, such as switch matrix networks, Butler networks, etc., high isolation between ports is often achieved by using microwave crosswires.
The current high-isolation crosswires are mainly realized by several ways: the first scheme is that a plurality of coaxial cables are respectively connected with different input and output ports, the scheme has the problems of large cross line size, heavy weight and incapability of realizing miniaturization, and most of products at home and abroad currently adopt the scheme; the second scheme is that a multilayer microwave substrate is adopted, and high isolation between cross lines is realized in a multilayer strip line mode, and the scheme mostly adopts LTCC (Low Temperature Co-fired Ceramic (LTCC-Low Temperature Co-fired Ceramic) technology, which is an advanced passive integration and hybrid circuit packaging technology), and a multilayer printed board, and the cost is relatively high; the third scheme is based on the MEMS technology, where an MEMS bridge (MEMS-Micro-Electro-Mechanical System, also called Micro-electromechanical System, microsystem) is disposed at a cross junction, and one of the signals is raised by the MEMS bridge to realize non-intersection with the other signal, thereby realizing isolation between different signals, but because the medium filled between the two signals is air, higher electromagnetic isolation cannot be realized.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a MEMS crossing line aims at solving and adopts the current miniaturized microwave device crossing line isolation low, problem with high costs.
In order to achieve the above object, the utility model adopts the following technical scheme: there is provided a MEMS crosswire comprising: the MEMS bridge comprises a first transmission line structure, a second transmission line structure and an MEMS bridge; the second transmission line structure is connected with the first transmission line structure through an interconnection layer to realize grounding, and the signal transmission direction of the second transmission line structure is crossed with the signal transmission direction of the first transmission line structure; the MEMS bridge is arranged between the first transmission line structure and the second transmission line structure and used for signal isolation between the first transmission line structure and the second transmission line structure.
Further, the first transmission line structure includes: the first shielding layer, the first adapter plate and the first transmission layer; the back surface of the first adapter plate is provided with a first open cavity, the front surface of the first adapter plate is provided with the first shielding layer, and the first adapter plate is provided with a first grounding hole; the first transmission layer comprises a first signal wire and first grounding wires arranged on two sides of the first signal wire respectively, the first signal wire penetrates through the first open cavity, the first grounding wires are arranged outside the first open cavity, and the first shielding layer and the first grounding wires are connected with each other and grounded through the first grounding hole; the second transmission line structure is the same as the first transmission line structure, the second transmission line structure comprises a second shielding layer, a second adapter plate and a second transmission layer, the second shielding layer is arranged on the back surface of the second adapter plate, a second open cavity is arranged on the front surface of the second adapter plate, a second signal line of the second transmission layer penetrates through the second open cavity, and the second shielding layer and a second grounding line of the second transmission layer are interconnected and grounded through a second grounding hole arranged on the second adapter plate; the first signal line and the second signal line are arranged in a crossed mode, the first grounding line and the second grounding line are connected and grounded through the interconnection layer, and the MEMS bridge is arranged between the first transmission layer and the second transmission layer.
Further, the MEMS bridge comprises: the isolation plate is supported between the first open cavity and the second open cavity by means of the cross-type support, and the isolation plate is provided with a release hole.
Further, the first interposer and the second interposer are both semiconductor materials.
Further, the semiconductor material is any one of silicon, gallium arsenide, quartz, glass, and sapphire.
Furthermore, the inner walls of the first grounding hole and the second grounding hole are provided with metal conducting layers, or the first grounding hole and the second grounding hole are internally provided with metal conducting columns.
Further, the first open cavity and the second open cavity are in a quadrangular frustum shape or a circular truncated cone shape with a small bottom and a large opening.
Further, the interconnect layer includes a plurality of BGA solder balls.
Furthermore, the MEMS bridge is made of metal copper.
Another object of the present invention is to provide a microwave device, including: the MEMS cross-wires.
The utility model provides a MEMS crossing line and microwave device's beneficial effect lies in: compared with the prior art, the MEMS cross line of the utility model utilizes the MEMS bridge to realize the isolation between different transmission signals, the MEMS bridge only has the isolation function, the transmission signals do not need to be transmitted through the MEMS bridge, the requirement on the process machining precision of the MEMS bridge is low, thus the mask plate with high manufacturing cost is not needed, the manufacturing of the MEMS bridge can be realized only by the film plate with low cost, and the cost can be effectively reduced; as the MEMS bridge is used as a shielding layer and only has an isolation function, the isolation between different signals can be improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic perspective view of a cross line of a MEMS according to an embodiment of the present invention;
fig. 2 is a schematic perspective view of a MEMS cross line according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a MEMS bridge of MEMS crosswires according to an embodiment of the present invention.
In the figure: 1. a first shielding layer; 2. a first transfer plate; 21. a first ground via; 22. a first open cavity; 3. a first transport layer; 31. a first ground line; 32. a first signal line; 4. an interconnect layer; 5. a MEMS bridge; 51. a cross-type stent; 52. a release aperture; 6. a second transport layer; 61. a second ground line; 62. a second signal line; 7. a second adapter plate; 71. a second open cavity; 72. a second ground via; 8. and a second shielding layer.
Detailed Description
In order to make the technical problem, technical solution and advantageous effects to be solved by the present invention more clearly understood, the following description is given in conjunction with the accompanying drawings and embodiments to illustrate the present invention in further detail. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 and fig. 2, the MEMS cross line provided by the present invention will now be described. The MEMS cross line comprises a first transmission line structure, a second transmission line structure and a MEMS bridge 5; the second transmission line structure is connected with the first transmission line structure through an interconnection layer 4 to realize grounding, and the signal transmission direction of the second transmission line structure is crossed with the signal transmission direction of the first transmission line structure; the MEMS bridge 5 is arranged between the first transmission line structure and the second transmission line structure and used for signal isolation between the first transmission line structure and the second transmission line structure.
Compared with the prior art, the MEMS cross line provided by the utility model utilizes the MEMS bridge 5 to realize the isolation between different transmission signals, the MEMS bridge 5 only has the isolation function, the transmission signals do not need to be transmitted through the MEMS bridge 5, the requirement on the process machining precision of the MEMS bridge 5 is low, thereby the mask plate with high manufacturing cost is not needed, the manufacturing of the MEMS bridge 5 can be realized only by the film plate with low cost, and the cost can be effectively reduced; as the MEMS bridge is used as a shielding layer and only has an isolation function, the isolation between different signals can be improved.
The utility model discloses be applied to microwave switch switching network, because the MEMS bridge does not participate in signal transmission, only have isolation function, can effectively reduce the cost of manufacture of MEMS bridge, and then reduce the cost of manufacture of device, improve the isolation between the different signals, avoid the interference between the different signals to improve signal transmission's precision. Wherein, the metal layer and the electroplating material in the preparation process can both be selected from copper, which is beneficial to reducing the cost.
The MEMS cross line provided in this embodiment is suitable for being applied to a microwave switch switching network, especially for satellite communications, and the microwave switch switching network has a high requirement for isolation between different signal transmission paths. In this embodiment, the first transmission line structure and the second transmission line structure are arranged at 90 °, and the signal transmission directions of the two structures are perpendicular.
In this embodiment, the interconnection layer 4 may connect the first transmission line structure and the second transmission line structure by soldering or bonding.
As a specific implementation manner of the MEMS crossing line provided by the present invention, please refer to fig. 1 to 2, the first transmission line structure includes: a first shielding layer 1, a first adapter plate 2 and a first transmission layer 3; the back surface of the first adapter plate 2 is provided with a first open cavity 22, the front surface of the first adapter plate is provided with the first shielding layer 1, and the first adapter plate 2 is provided with a first grounding hole 21; the first transmission layer 3 comprises a first signal wire 32 and a first grounding wire 31 respectively arranged at two sides of the first signal wire 32, the first signal wire 32 passes through the first open cavity 22, the first grounding wire 31 is arranged outside the first open cavity 22, and the first shielding layer 1 and the first grounding wire 31 are interconnected and grounded through the first grounding hole 21; the second transmission line structure is the same as the first transmission line structure, the second transmission line structure includes a second shielding layer 8, a second patch panel 7 and a second transmission layer 6, the second shielding layer 8 is disposed on the back surface of the second patch panel 7, a second open cavity 71 is disposed on the front surface of the second patch panel 7, a second signal line 62 of the second transmission layer 6 passes through the second open cavity 71, and the second shielding layer 8 and a second ground line 61 of the second transmission layer 6 are interconnected and grounded through a second ground hole 72 disposed on the second patch panel 7; the first signal line 32 is disposed to intersect with the second signal line 62, the first ground line 31 and the second ground line 61 are interconnected and grounded through the interconnection layer 4, and the MEMS bridge 5 is disposed between the first transmission layer 3 and the second transmission layer 6.
In this embodiment, the first transmission structure is prepared by the following process:
the first transfer plate 2 is prepared by the following steps:
s1, manufacturing a first open cavity 22 on the back of the first adapter plate 2 in a wet etching or dry etching mode; wherein, the front surface and the back surface of the first transfer plate 2 are polished before use;
s2, manufacturing a first grounding hole 21 on the first adapter plate 2 in a wet etching or dry etching mode;
s3, large-area metal preparation is realized on the front surface of the first adapter plate 2 through a metal sputtering process, and graphical preparation of a metal layer is realized through a photoetching technology;
s4, performing metal sputtering on the back surface of the first adapter plate 2 to implement the preparation of a metal layer, and by performing sputtering twice, the metal layer can be better attached to the hole wall of the first grounding hole 21 and the inner wall of the first open cavity 22;
s4, increasing the thickness of the metal layer on the front and back sides of the first adapter plate 2 and the thickness of the metal layer on the hole wall of the first grounding hole 21 by a metal electroplating process, wherein the thickness of the metal layer can be 2-10 μm, and the metal electroplating material can be gold or copper;
s5, solder mask is formed on the surface of the back metal layer to facilitate the soldering of the interconnection layer 4.
Secondly, the MEMS bridge 5 is prepared by the following steps:
s1, filling the first open cavity 22 of the first interposer 2 with a material immiscible with the photoresist material such as photoresist, the filling height does not exceed the opening of the first open cavity 22, and the filling material serves as a first sacrificial layer; wherein the filling material is silicon dioxide or copper;
s2, laminating spin-on photoresist or polyimide on the first sacrificial layer of the first interposer 2 as a second sacrificial layer of the MEMS bridge 5;
s3, realizing the graphical preparation of the MEMS bridge 5 through the photoetching process;
s4, the growth of the MEMS bridge 5 is realized through metal plating, and the plating material can be gold or copper; the growth of the MEMS bridge 5 can also be realized by evaporating aluminum, and if the material of the MEMS bridge 5 is aluminum, the rigidity of the MEMS bridge 5 can be enhanced by doping;
and S5, after the MEMS bridge 5 is electroplated, removing the first sacrificial layer and the second sacrificial layer from the first adapter plate 2 together by means of wet etching.
And thirdly, preparing a second transmission line structure, wherein the preparation process of the second transmission line structure is the same as that of the first transmission line structure, and the back surface of the first adapter plate 2 is connected with the front surface of the second adapter plate 7 in a welding mode through the interconnection layer 4, so that grounding communication is realized.
In this embodiment, the first transmission line structure and the second transmission line structure are designed to be the same structure, and when a device is manufactured by using a package, only the angle and the position of placement need to be adjusted, so that the cost can be effectively reduced.
Wherein, because the first signal line, the second signal line and MEMS bridge 5 are too close to each other, it is easy to cause short circuit; for the second signal line 62, the MEMS bridge 5, the second shielding layer 8 and the second grounding hole 72 form a microwave transmission line structure similar to a strip line, the width of the second signal line 62 and the distance between the second signal line and the upper and lower grounds (the MEMS bridge 5 and the second shielding layer 8) determine the characteristics and impedance of the strip line, and too close distance between the second signal line 62 and the MEMS bridge 5 also causes the signal line to be narrow, increases the process difficulty and thus increases the cost; in this embodiment, the first open cavity 22 is formed in the first interposer 2, and the second open cavity 71 is formed in the second interposer 7, so that the distance between the first signal line 32 and the second signal line 62 and the distance between the MEMS bridge 5 serving as the metal shielding layers can be increased, the isolation effect is improved, and the manufacturing difficulty is reduced.
In this embodiment, the MEMS bridge 5 connects the reverse side of the first interposer 2 and the front side of the second interposer 7, and is interconnected by the BGA balls, thereby structurally forming a coaxial cable-like structure, which can achieve miniaturization while ensuring high isolation of the cross wires.
In this embodiment, the first shielding layer 1, the second shielding layer 8, the first transmission layer 3, the second transmission layer 6 and the MEMS bridge 5 are made of metal.
In the present embodiment, the first signal line 32 and the second signal line 62 cross each other vertically.
In the present embodiment, the definition of the front and back surfaces of the first adapter plate 2 is that the two opposite surfaces of the first adapter plate 2 are defined as the front and back surfaces for convenience of description, and this is not a limitation to the present invention.
As a specific implementation manner of the embodiment of the present invention, please refer to fig. 1 to 3, the MEMS bridge 5 includes: a cross bracket 51 connected to the second ground wire 61, and a partition plate disposed in the middle of the cross bracket 51, the partition plate being supported between the first open cavity 22 and the second open cavity 71 by means of the cross bracket 51, the partition plate being provided with a release hole 52. The present embodiment has the following effects by providing the release holes 52 on the partition plate: firstly, in the process of preparing the MEMS bridge 5, the sacrificial layer can be removed more quickly, and meanwhile, the sacrificial layer below the MEMS bridge 5 is ensured to be removed cleanly; secondly, the structural stress of the MEMS bridge 5 is released, residual stress caused by the process exists in the metal sputtering and electroplating forming process of the MEMS bridge 5, after the sacrificial layer is removed, the MEMS bridge 5 is easy to warp greatly, and the release hole 52 can effectively relieve the phenomenon. Herein, the sacrificial layer includes a first sacrificial layer and a second sacrificial layer.
In this embodiment, the cross bracket 51 is a cross bracket corresponding to the vertical intersection of the first signal line 32 and the second signal line 62.
In this embodiment, referring to fig. 3, the release holes 52 are uniformly arranged or arrayed on the partition plate. The shape of the release hole may be circular, elliptical, polygonal, etc., without limitation.
As a specific implementation manner of the embodiment of the present invention, referring to fig. 1 and fig. 2, the first interposer 2 and the second interposer 7 are both made of semiconductor materials.
As a specific implementation manner of the embodiment of the present invention, the semiconductor material is any one of silicon, gallium arsenide, quartz, glass, and sapphire. In this embodiment, silicon is selected as a material for manufacturing the first interposer 2 and the second interposer 7, which is low in cost and mature in punching technology, thereby reducing the manufacturing cost.
As a specific implementation manner of the embodiment of the present invention, please refer to fig. 1 to fig. 2, the inner walls of the first grounding hole 21 and the second grounding hole 72 are provided with metal conductive layers, or the first grounding hole 21 and the second grounding hole 72 are provided with metal conductive columns.
As a specific implementation manner of the embodiment of the present invention, please refer to fig. 1 to 2, the first open cavity 22 and the second open cavity 71 are in the shape of a truncated pyramid or a truncated cone with a small bottom and a large opening.
As an embodiment of the present invention, referring to fig. 1 to 2, the interconnection layer 4 includes a plurality of BGA solder balls. In this embodiment, the first ground line 31 and the second ground line 61 are connected by soldering using a low-cost BGA solder ball, thereby achieving the overall ground connection. Among them, BGA is an abbreviation of Bump grid array, i.e. ball grid array, and is a ball grid array packaging technology.
As a specific implementation manner of the embodiment of the present invention, please refer to fig. 1 to 2, the MEMS bridge 5 is made of copper. In this embodiment, since the MEMS bridge 5 is used as a metal shielding layer only for improving isolation between different microwave signals and not transmitting radio frequency signals, copper with low cost may be selected as a raw material to realize low-loss transmission of microwave signals, which can reduce cost compared with gold used as a raw material for preparing the MEMS bridge 5; since the MEMS bridge 5 is used as a metal shielding layer, it is connected only to the ground line, not to the signal line, and can improve the isolation between different signals.
The utility model also provides a microwave device, include the MEMS crossing line.
The utility model provides a microwave device because the MEMS bridge does not participate in signal transmission, only has the isolation function, can effectively reduce the cost of manufacture of MEMS bridge, and then reduces the cost of manufacture of device, improves the isolation between the different signals, avoids the interference between the different signals to improve signal transmission's precision. Wherein, the metal layer and the electroplating material in the preparation process can both be selected from copper, which is beneficial to reducing the cost.
The MEMS cross line provided in this embodiment is suitable for being applied to a microwave switch switching network, especially for satellite communications, and the microwave switch switching network has a high requirement for isolation between different signal transmission paths.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (10)
- A MEMS crosswire, comprising:a first transmission line structure;the second transmission line structure is connected with the first transmission line structure through an interconnection layer to realize grounding, and the signal transmission direction of the second transmission line structure is crossed with the signal transmission direction of the first transmission line structure;and the MEMS bridge is arranged between the first transmission line structure and the second transmission line structure and used for signal isolation between the first transmission line structure and the second transmission line structure.
- 2. The MEMS crosswire of claim 1, wherein the first transmission line structure comprises:a first shielding layer;the back surface of the first adapter plate is provided with a first open cavity, the front surface of the first adapter plate is provided with the first shielding layer, and the first adapter plate is provided with a first grounding hole;the first transmission layer comprises a first signal wire and first grounding wires arranged on two sides of the first signal wire respectively, the first signal wire penetrates through the first open cavity, the first grounding wires are arranged outside the first open cavity, and the first shielding layer and the first grounding wires are connected with each other and grounded through the first grounding hole;the second transmission line structure is the same as the first transmission line structure, the second transmission line structure comprises a second shielding layer, a second adapter plate and a second transmission layer, the second shielding layer is arranged on the back surface of the second adapter plate, a second open cavity is arranged on the front surface of the second adapter plate, a second signal line of the second transmission layer penetrates through the second open cavity, and the second shielding layer and a second grounding line of the second transmission layer are interconnected and grounded through a second grounding hole arranged on the second adapter plate;the first signal line and the second signal line are arranged in a crossed mode, the first grounding line and the second grounding line are connected and grounded through the interconnection layer, and the MEMS bridge is arranged between the first transmission layer and the second transmission layer.
- 3. The MEMS cross-wire of claim 2 wherein the MEMS bridge comprises:the crossed bracket is connected with the second grounding wire;the isolation plate is arranged in the middle of the cross-type support and supported between the first open cavity and the second open cavity by the cross-type support, and the isolation plate is provided with a release hole.
- 4. The MEMS cross-wire of claim 2 wherein the first interposer and the second interposer are both semiconductor materials.
- 5. The MEMS cross wire of claim 4, wherein the semiconductor material is any one of silicon, gallium arsenide, quartz, glass, and sapphire.
- 6. The MEMS cross-wire of claim 2, wherein an inner wall of the first ground via and the second ground via is provided with a metal conductive layer, or wherein a metal conductive post is provided within the first ground via and the second ground via.
- 7. The MEMS crosswire of claim 2, wherein the first open cavity and the second open cavity have a shape of a truncated pyramid or a truncated cone with a small bottom opening.
- 8. The MEMS cross-wire of claim 1 wherein the interconnect layer comprises a plurality of BGA solder balls.
- 9. The MEMS crosswire of claim 1, wherein the MEMS bridge is formed of copper.
- 10. A microwave device comprising a MEMS crosswire according to any of claims 1-9.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114006136A (en) * | 2021-08-20 | 2022-02-01 | 西安空间无线电技术研究所 | High-isolation three-dimensional microsystem structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114006136A (en) * | 2021-08-20 | 2022-02-01 | 西安空间无线电技术研究所 | High-isolation three-dimensional microsystem structure |
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