CN212572482U - Power amplifier, base station equipment and communication base station - Google Patents
Power amplifier, base station equipment and communication base station Download PDFInfo
- Publication number
- CN212572482U CN212572482U CN202020858049.1U CN202020858049U CN212572482U CN 212572482 U CN212572482 U CN 212572482U CN 202020858049 U CN202020858049 U CN 202020858049U CN 212572482 U CN212572482 U CN 212572482U
- Authority
- CN
- China
- Prior art keywords
- transmission line
- matching circuit
- power amplifier
- transistor
- base station
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The embodiment of the utility model provides a power amplifier and base station equipment, power amplifier include transistor, harmonic suppression circuit and output matching circuit, and the harmonic suppression circuit includes first transmission line, resonance electric capacity and second transmission line; one end of the first transmission line is electrically connected with the output matching circuit, and the second transmission line and the resonant capacitor are connected to the other end of the first transmission line in parallel; the first transmission line is a quarter-wavelength microstrip transmission line, the second transmission line is an eighth-wavelength microstrip transmission line with an open-ended terminal, and the wavelength is the fundamental wavelength; one end of the output matching circuit is electrically connected with the drain electrode of the transistor, the other end of the output matching circuit is electrically connected with the load, and the first transmission line is electrically connected with one end, close to the transistor, of the output matching circuit. The utility model discloses harmonic suppression circuit among power amplifier simple structure, the size is little, can promote power amplifier's efficiency, realizes power amplifier's miniaturized design.
Description
Technical Field
The utility model relates to the field of communication technology, especially, relate to a power amplifier, base station equipment and communication base station.
Background
With the continuous development of communication technology, communication devices are continuously developing toward miniaturization and low power consumption. The power amplifier serving as a high-energy-consumption module in the communication equipment improves the working efficiency while considering the size and the energy consumption of the power amplifier, and is also a key development direction in the communication technology.
The existing high-efficiency power amplifier is designed on the basis of a wide bandgap GaN (gallium nitride) device which is greatly influenced by harmonic waves, and because the size of the device is limited, a harmonic suppression circuit cannot be preset in the device, so in order to improve the efficiency of the power amplifier, a harmonic suppression circuit is often connected in series on an external matching circuit. However, the conventional harmonic suppression circuit has a complicated structure, is embedded in an external matching circuit, increases the size of the external matching circuit, has a deviation in the modulation of harmonic impedance, and fails to modulate the harmonic impedance into a high-efficiency region of a device, thereby resulting in low efficiency of a power amplifier.
SUMMERY OF THE UTILITY MODEL
An embodiment of the utility model provides a power amplifier and base station equipment to it is complicated to solve current harmonic suppression circuit structure, and the lower problem of power amplifier efficiency.
In order to solve the above problem, the utility model discloses a realize like this:
in a first aspect, an embodiment of the present invention provides a power amplifier, where the power amplifier includes a transistor, a harmonic suppression circuit, and an output matching circuit, where the harmonic suppression circuit includes a first transmission line, a resonant capacitor, and a second transmission line;
one end of the first transmission line is electrically connected with the output matching circuit, and the second transmission line and the resonant capacitor are connected to the other end of the first transmission line in parallel;
the first transmission line is a quarter-wavelength microstrip transmission line, the second transmission line is an eighth-wavelength open-ended microstrip transmission line, and the wavelength is a fundamental wavelength;
one end of the output matching circuit is electrically connected with the drain electrode of the transistor, the other end of the output matching circuit is connected with a load, and the first transmission line is electrically connected with one end, close to the transistor, of the output matching circuit.
In a second aspect, an embodiment of the present invention provides a base station device, including the above power amplifier.
In a third aspect, an embodiment of the present invention provides a communication base station, including the above-mentioned base station device.
In an embodiment of the present invention, the power amplifier includes a transistor, a harmonic suppression circuit, and an output matching circuit. The harmonic suppression circuit comprises a first transmission line, a resonant capacitor and a second transmission line, wherein one end of the first transmission line is electrically connected with the output matching circuit. The second transmission line and the resonance capacitor are connected in parallel to the other end of the first transmission line, the first transmission line is a quarter-wavelength microstrip transmission line, and the second transmission line is an eighth-wavelength microstrip transmission line with an open-ended terminal. Therefore, the connection part of the first transmission line and the output matching circuit presents fundamental wave impedance open circuit and second harmonic short circuit, the second transmission line presents capacitance and is in common potential with the resonance capacitor, and the effects of inhibiting second harmonic and improving the efficiency of the drain electrode can be achieved. Furthermore, the utility model discloses harmonic suppression circuit's simple structure, size are little, and first transmission line is connected in the one end that output matching circuit is close to the transistor, can realize the miniaturized design of power amplifier module. In addition, the second transmission line is a terminal open circuit line and is in common potential with the resonant capacitor, so that the second transmission line does not affect an output matching circuit of the power amplifier, the second harmonic impedance can be optimized on the premise of ensuring that the fundamental frequency impedance is not affected, and the efficiency of the device can be improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive labor.
Fig. 1 shows a schematic circuit diagram of a power amplifier according to an embodiment of the present invention;
fig. 2 shows a schematic diagram of a transmission line according to an embodiment of the present invention;
fig. 3 shows a drain efficiency contour distribution diagram according to an embodiment of the present invention;
fig. 4 shows a comparison graph before and after second harmonic impedance optimization according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, of the embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
In a first aspect, referring to fig. 1 and fig. 2, an embodiment of the present invention provides a power amplifier, which may specifically include the following structure:
a transistor 10, a harmonic suppression circuit 20, and an output matching circuit 30;
the harmonic rejection circuit 20 includes a first transmission line T1, a resonant capacitor C, and a second transmission line T2;
one end of the first transmission line T1 is electrically connected to the output matching circuit, and the second transmission line T2 is connected to the other end of the first transmission line T1 in parallel with the resonant capacitor C;
the first transmission line T1 is a quarter-wavelength microstrip transmission line and the second transmission line T2 is an open-ended microstrip transmission line of one-eighth wavelength, wherein the wavelength is the fundamental wavelength;
one end of the output matching circuit 30 is electrically connected to the drain of the transistor 10, the other end of the output matching circuit 30 is electrically connected to a load, and the first transmission line T1 is electrically connected to one end of the output matching circuit close to the transistor 10.
Specifically, as shown in fig. 1, the power amplifier includes a transistor 10, a harmonic rejection circuit 20, and an output matching circuit 30, and the output matching circuit 30 may include a parasitic parameter matching circuit 31 and a fundamental wave matching circuit 32. The first transmission line T1 of the harmonic rejection circuit 20 is connected to the output matching circuit 30 at a point a, and the second transmission line T2 is connected in parallel to the resonant capacitor C at a point B at the other end of the first transmission line T1. One end of the output matching circuit 30 is electrically connected to the drain of the transistor 10, the other end of the output matching circuit 30 is electrically connected to the load, and the first transmission line T1 is electrically connected to one end of the output matching circuit 30 close to the transistor 10. Thereby, connect harmonic suppression circuit 20 in the output matching circuit 30 and be close to the drain department of transistor 10, can save the harmonic suppression circuit of inlaying in locating the output matching circuit to can reduce output matching circuit 30's size, moreover the utility model discloses harmonic suppression circuit 20 simple structure is favorable to power amplifier's miniaturized design.
As shown in fig. 2, the impedance Z of the input end of the transmission lineIN(l) Expressed as the formula (1),
in the formula (1), Z0Is the characteristic impedance of the transmission line, ZLIs the load impedance of the termination connection of the transmission line, l is the length of the transmission line, i.e. the distance from the termination of the transmission line to the input, wherein the transmission line may be the first transmission line T1 or the second transmission line T2.
As can be seen from equation (1), when the length l of the transmission line is a quarter wavelength, where the wavelength is the fundamental wavelength, the input end impedance can be expressed by equation (2),
when the quarter-wave transmission line exhibits an open circuit, i.e. the terminating load impedance ZL→ infinity, at this time the input impedance ZIN(l) 0; when the quarter-wave transmission line exhibits a short circuit, i.e. the terminating load impedance ZL→ 0, when the input impedance Z isIN(l) Infinity. Therefore, the embodiment of the present invention provides a first transmission line T1 is a quarter-wave transmission line, which can realize the high-low impedance transformation from the dc feed to the root of the power amplifier tube, and does not affect the actual impedance value.
Optionally, the harmonic rejection circuit 20 is a second harmonic rejection circuit. Specifically, since the frequency of the second harmonic is twice the frequency of the fundamental wave, and is the harmonic closest to the frequency of the fundamental wave, the second harmonic also has a large influence on the fundamental wave. Therefore, the effect of the harmonic on the fundamental wave can be reduced to a large extent by suppressing the second harmonic. And the first transmission line T1 presents the characteristics of open-circuit fundamental wave impedance and short-circuit second harmonic wave at the connection point A with the output matching circuit, and can play the role of inhibiting the second harmonic wave without influencing the fundamental wave impedance.
As can be seen from equation (1), when the length l of the transmission line is one eighth wavelength, where the wavelength is the fundamental wavelength, the input end impedance can be expressed by equation (3),
when the transmission line of one-eighth wavelength exhibits an open circuit, i.e. terminating load impedance ZL→ infinity, at this time the input impedance ZIN(l)＝-jZ0. Therefore, the second transmission line T2 in the embodiment of the present invention is an open-ended line with one-eighth wavelength, and the second transmission line T2 can exhibit a capacitive property at the connection point B, and is in common with the resonant capacitor C. Thus, the second transmission line T2 can function to suppress the second harmonic, andthe second transmission line T2 does not participate in the matching of the output matching circuit, that is, the second transmission line T2 does not affect the matching result of the output matching circuit. The first transmission line T1 and the second transmission line T2 are microstrip transmission lines, which are microwave transmission lines formed by a single conductor strip supported on a dielectric substrate, and since the microstrip transmission lines have advantages of good harmonic suppression effect, wide frequency band, high reliability, low cost, and the like, the suppression effect of the harmonic suppression circuit on the second harmonic can be further improved.
Fig. 3 shows the effect of the length of the second transmission line T2 on the drain efficiency, and points m1 to m5 respectively represent five corresponding points in the conversion process of the length l of the second transmission line T2 from 0 to one eighth of the wavelength, wherein the length l of the second transmission line T2 corresponding to m5 is one eighth of the wavelength. As can be seen from FIG. 3, the second harmonic impedance at point m1 is Z0X (0.812+ j0.221), drain efficiency of about 70%; the second harmonic impedance at point m2 is Z0X (0.656+ j0.419), the drain efficiency is about 71%; the second harmonic impedance at point m3 is Z0X (0.464+ j0.562), drain efficiency is about 72%; the second harmonic impedance at point m4 is Z0X (0.252+ j0.647), drain efficiency is approximately 73%; the second harmonic impedance at point m5 is Z0X (0.035+ j0.670), the drain efficiency is about 74%, where Z0Representing the characteristic impedance value of the second transmission line T2. Optionally, the characteristic impedance Z of the second transmission line T20Is 50 omega. Therefore, when the second transmission line T2 is a microstrip transmission line with an eighth wavelength, the second transmission line T2 suppresses the second harmonic, and the drain efficiency of the transistor can reach 74%, that is, the microstrip transmission line with an eighth wavelength can modulate the second harmonic impedance to a high efficiency region of the drain, thereby improving the drain efficiency.
Fig. 4 shows the harmonic modulation result before and after the harmonic suppression circuit is optimized, wherein, fundamental frequency range of change is between 2.5GHz to 2.7GHz, frequency interval 0.01GHz, the embodiment of the utility model provides a modulation result of harmonic suppression circuit is the graph of second harmonic impedance after optimizing and the graph of fundamental frequency impedance after optimizing, and the modulation result of the harmonic suppression circuit of traditional scheme is the graph of second harmonic impedance before optimizing and the graph of fundamental frequency impedance before optimizing. As can be seen from fig. 4, the optimized second harmonic impedance is located in the high efficiency region of the device, and is more accurate than the modulation of the second harmonic impedance before the optimization, and the influence of the optimized fundamental impedance is smaller than that of the fundamental impedance before the optimization. Therefore, the utility model discloses harmonic suppression circuit can optimize the second harmonic impedance under the prerequisite of guaranteeing not to influence the fundamental frequency impedance, and can modulate the high efficiency region of device with the second harmonic impedance accurately to can promote device efficiency.
To sum up, the embodiment of the present invention provides a power amplifier having at least the following advantages:
in an embodiment of the present invention, the power amplifier includes a transistor, a harmonic suppression circuit, and an output matching circuit. The harmonic suppression circuit comprises a first transmission line, a resonant capacitor and a second transmission line, wherein one end of the first transmission line is electrically connected with the output matching circuit. The second transmission line and the resonance capacitor are connected in parallel to the other end of the first transmission line, the first transmission line is a quarter-wavelength microstrip transmission line, and the second transmission line is an eighth-wavelength microstrip transmission line with an open-ended terminal. Therefore, the connection part of the first transmission line and the output matching circuit presents fundamental wave impedance open circuit and second harmonic short circuit, the second transmission line presents capacitance and is in common potential with the resonance capacitor, and the effects of inhibiting second harmonic and improving the efficiency of the drain electrode can be achieved. Furthermore, the utility model discloses harmonic suppression circuit's simple structure, size are little, and first transmission line is connected in the one end that output matching circuit is close to the transistor, can realize the miniaturized design of power amplifier module. In addition, the second transmission line is a terminal open circuit line and is in common potential with the resonant capacitor, so that the second transmission line does not affect an output matching circuit of the power amplifier, the second harmonic impedance can be optimized on the premise of ensuring that the fundamental frequency impedance is not affected, and the efficiency of the device can be improved.
Optionally, the transistor is a GaN transistor or a CMOS transistor.
Specifically, the transistor is a GaN (gallium nitride) transistor or a CMOS (Complementary Metal-Oxide-Semiconductor) transistor. The GaN transistor has a forbidden band width three times that of the silicon transistor and a critical breakdown electric field ten times that of the silicon transistor, and thus, the on-resistance of the GaN transistor of the same rated voltage is about 1000 times lower than that of the silicon transistor, so that the GaN transistor can realize high conversion efficiency. In addition, GaN transistors are widely used in the field of communications due to their advantages of small size, low cost, and the like. But the GaN transistor receives the influence of harmonic great, the utility model discloses the harmonic suppression circuit of embodiment can effectively optimize the harmonic of GaN transistor, promotes the efficiency performance of GaN transistor. The utility model discloses harmonic suppression circuit can be used for suppressing the harmonic of CMOS transistor equally to promote the efficiency performance of CMOS transistor.
Alternatively, referring to fig. 1, the output matching circuit 30 includes a parasitic parameter matching circuit 31 and a fundamental wave matching circuit 32;
the parasitic parameter matching circuit 31 is electrically connected between the drain of the transistor 10 and the fundamental wave matching circuit 32.
Specifically, in order to match the impedance between the load and the transistor 10, to ensure the transmission efficiency of the load power, and to avoid the quality of the transmission signal from being affected, a parasitic parameter matching circuit 31 and a fundamental wave matching circuit 32 are provided in the output matching circuit 30, wherein the parasitic parameter matching circuit 31 is connected between the drain of the transistor 10 and the fundamental wave matching circuit 32. As shown in fig. 1, the parasitic parameter matching circuit 31 includes an inductor and a capacitor, the inductor is connected in series with the fundamental wave matching circuit 32, one end of the capacitor is electrically connected between the inductor and the fundamental wave matching circuit 32, and the other end of the capacitor is grounded, so that matching with the load impedance is realized by adjusting the inductor and the capacitor. In addition, the fundamental matching circuit 32 mainly ensures that the fundamental power gain is maximum, the harmonic power gain is minimum, and the loss is as small as possible.
In a second aspect, the embodiment of the present invention further provides a base station device, including the foregoing power amplifier.
Particularly, the embodiment of the utility model provides a still provide a base station equipment, base station equipment includes aforementioned power amplifier. The base station equipment is mainly used for receiving or sending signals, and a harmonic suppression circuit in the power amplifier can perform harmonic optimization processing on the transmitted signals so as to reduce interference of harmonics on the fundamental waves and improve the efficiency of the power amplifier. Moreover, the embodiment of the utility model provides an in harmonic suppression circuit simple structure, the size is little, is favorable to power amplifier's miniaturized design. Therefore, the size of the base station equipment can be reduced, and the efficiency of the base station equipment is improved.
Optionally, the base station device is an AAU or an RRU.
Specifically, the base station device may be an AAU (Radio Remote Unit) or an RRU (Active Antenna Unit). The AAU is a main device of a 5G (5th generation mobile communication technology) MIMO (Multiple-Input Multiple-Output) multi-channel base station, and integrates an RRU and a passive antenna to support MIMO multi-channel Input and Output signals, and the RRU can provide a radio frequency channel receiving signal and transmitting signal multiplexing function. The utility model discloses harmonic suppression circuit can carry out harmonic optimization to the signal that AAU and RRU received and dispatched to promote AAU and RRU's efficiency.
In a third aspect, the embodiment of the present invention further provides a communication base station, including the above base station device.
Particularly, the embodiment of the utility model provides a still provide a communication base station, this communication base station includes above-mentioned base station equipment. The current communication network technology mainly takes a 5G network as a core development direction, a 5G base station is a main device of the 5G network, and as the 5G base station adopts MIMO multi-channel communication, more signals are transmitted and received. According to the framework of basic station can know, AAU mainly is used in 5G basic station, and RRU mainly is used in 4G basic station, through embedding in the basic station equipment of 5G basic station or 4G basic station the utility model discloses harmonic suppression circuit can carry out effectual harmonic optimization to the signal of transmission to can promote the efficiency of 5G basic station or 4G basic station.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The embodiments of the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the above-mentioned embodiments, which are only illustrative and not restrictive, and those skilled in the art can make many forms without departing from the spirit and scope of the present invention.
Claims (8)
1. A power amplifier, characterized in that the power amplifier comprises a transistor, a harmonic rejection circuit and an output matching circuit, the harmonic rejection circuit comprising a first transmission line, a resonant capacitor and a second transmission line;
one end of the first transmission line is electrically connected with the output matching circuit, and the second transmission line and the resonant capacitor are connected to the other end of the first transmission line in parallel;
the first transmission line is a quarter-wavelength microstrip transmission line, the second transmission line is an eighth-wavelength open-ended microstrip transmission line, and the wavelength is a fundamental wavelength;
one end of the output matching circuit is electrically connected with the drain electrode of the transistor, the other end of the output matching circuit is electrically connected with a load, and the first transmission line is electrically connected with one end, close to the transistor, of the output matching circuit.
2. The power amplifier of claim 1,
the characteristic impedance of the second transmission line is 50 Ω.
3. The power amplifier of claim 1,
the harmonic suppression circuit is a second harmonic suppression circuit.
4. The power amplifier of claim 1,
the transistor is a GaN transistor or a CMOS transistor.
5. The power amplifier of claim 1, wherein the output matching circuit comprises a parasitic parameter matching circuit and a fundamental matching circuit;
the parasitic parameter matching circuit is electrically connected between the drain of the transistor and the fundamental wave matching circuit.
6. A base station device, characterized in that it comprises a power amplifier according to any one of claims 1-5.
7. The base station device of claim 6, wherein the base station device is an AAU or an RRU.
8. A communication base station, characterized in that it comprises a base station device according to claim 6 or 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020858049.1U CN212572482U (en) | 2020-05-20 | 2020-05-20 | Power amplifier, base station equipment and communication base station |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020858049.1U CN212572482U (en) | 2020-05-20 | 2020-05-20 | Power amplifier, base station equipment and communication base station |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212572482U true CN212572482U (en) | 2021-02-19 |
Family
ID=74623444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020858049.1U Active CN212572482U (en) | 2020-05-20 | 2020-05-20 | Power amplifier, base station equipment and communication base station |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212572482U (en) |
-
2020
- 2020-05-20 CN CN202020858049.1U patent/CN212572482U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108039591B (en) | Double-linear polarization rectifying antenna with harmonic suppression capability | |
| CN107644852B (en) | Integrated passive device for RF power amplifier package | |
| CN210092340U (en) | Terminal equipment and tunable antenna system thereof | |
| CN112701485B (en) | Rectifying resonant ring small electric antenna applied to wireless communication and energy transmission | |
| CN213401533U (en) | Rectifying resonance loop small electric antenna applied to wireless communication and energy transmission | |
| CN107483025A (en) | A kind of F power-like amplifiers based on new harmonic control network | |
| CN109546977B (en) | Dual-band efficient inverse F-type power amplifier | |
| CN110708701A (en) | Broadband radio frequency power amplifier design method and 5G low-frequency band radio frequency power amplifier | |
| CN109525129B (en) | Rectifier circuit based on cooperative network and design method | |
| CN106876990B (en) | A kind of antenna and mobile terminal of mobile terminal | |
| Lin et al. | Wide input power range X-band rectifier with dynamic capacitive self-compensation | |
| CN110729281A (en) | Broadband high-power GaN pre-matching power tube | |
| CN109728406B (en) | Antenna system and electronic device | |
| US20240079796A1 (en) | Antenna structure and electronic device | |
| CN204651491U (en) | There is the difference gap mimo antenna of high cmrr | |
| CN212572482U (en) | Power amplifier, base station equipment and communication base station | |
| CN116760375A (en) | Dual-band BJ class power amplifier with high dual-band ratio broadband characteristic | |
| CN116131778A (en) | Broadband distributed power amplifier and integrated circuit | |
| CN107659277A (en) | A kind of double-frequency broadband power amplifier matching circuit for GaN power devices | |
| CN114123994A (en) | Active multi-reactance compensation output topological structure based on switch E-type mode power amplifier | |
| CN112838833A (en) | F-type power amplifier based on hairpin type microstrip band-pass filter and design method | |
| Unichi et al. | Rectifiers based on quadrature hybrid coupler with improved performance for energy harvesting | |
| Oshima et al. | Microstrip patch antenna with class-F load and DC block function for microwave power transfer | |
| CN218997060U (en) | Terminal electronic equipment | |
| CN214756261U (en) | High-efficiency dual-frequency power amplifier based on low-pass matching network |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |