CN212570943U

CN212570943U - Heating device for wafer test

Info

Publication number: CN212570943U
Application number: CN202021865362.4U
Authority: CN
Inventors: 巩铁建; 陶为银
Original assignee: Henan General Intelligent Equipment Co Ltd
Current assignee: Henan General Intelligent Equipment Co Ltd
Priority date: 2020-08-31
Filing date: 2020-08-31
Publication date: 2021-02-19
Anticipated expiration: 2030-08-31

Abstract

The utility model discloses a heating device is used in wafer test, including base, reaction box, support wall body, rubber pad and hot air flow pipe, the base is fixed in the bottom plate top, and the telescoping device setting is in the base top, and the telescoping device top is connected with the tray, and the tray surface is provided with the rubber pad, and the wafer has been placed to the rubber pad top, and the support column is fixed in the backup pad below, and the support wall body top is provided with the reaction box, and the heating box left side is connected with the air inflow pipe, and the air outflow pipe setting is on the reaction box right side, and installs the valve above the air outflow pipe. This heating device is used in wafer test, the structure sets up rationally, has installed the temperature tester in the reaction box, can detect the temperature that gets into the hot-air in the reaction box, can avoid the speed that the hot-air got into the reaction box, and the reaction box is sealed structure when the reaction begins, and the hot-air is full of the reaction box, avoids the wafer uneven condition of being heated, and the development of semiconductor trade is promoted in the accurate operation of better assurance wafer test.

Description

Heating device for wafer test

Technical Field

The utility model relates to an elevator equipment science and technology technical field specifically is a heating device is used in wafer test.

Background

The wafer is made by silicon element through special processing process, in the manufacturing process of the wafer, the silicon element is firstly purified, then the pure silicon is made into silicon crystal bars, and the silicon crystal bars are cut to form a thin wafer which can be changed into parts used by some electronic products through some processing, such as internal memory, microprocessor and the like, the larger the area of the wafer is, the better the required technology is, the manufactured wafer needs to be tested by the wafer, unqualified wafers are eliminated, however, before the wafer is tested, the wafer must be heated, the traditional mode is to change air into hot air to be blown onto the wafer after the air is heated, so as to improve the temperature of the wafer and achieve the heating effect. However, the conventional heating device is bulky, inconvenient to operate, and unable to clearly know the temperature of the hot air, and blowing the hot air against the wafer is difficult to make the wafer heated uniformly, which may affect the final measurement result.

In order to overcome the defects existing in the current market, the technology of improving the wafer heating device is urgently needed, the accurate operation of wafer testing can be better ensured, and the development of the semiconductor industry is promoted.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a heating device is used in wafer test to the heating device volume that provides in solving above-mentioned background is bigger, operates inconveniently, and the temperature of understanding hot-air that can not be very clear, and blows hot-air and also hardly let the wafer be heated evenly to the wafer, can influence ultimate measuring result scheduling problem.

In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a heating device is used in wafer test, the on-line screen storage device comprises a base, the reaction box, supporting wall, rubber pad and hot air flow pipe, the base is fixed in the bottom plate top, and the telescoping device setting is in the base top, the telescoping device top is connected with the tray, and the tray surface is provided with the rubber pad, the wafer has been placed to the rubber pad top, and the wafer top is fixed with the backup pad, the support column is fixed in the backup pad below, and the backup pad top is fixed with supporting wall, supporting wall top is provided with the reaction box, and the reaction box bottom is provided with the reaction box hole, the heating box left side is connected with the air inflow pipe, and the heating box right side is provided with the heater, and reaction box left side internally mounted has temperature measuring apparatu.

Preferably, the reaction box is made of transparent glass, the holes of the reaction box are circular, and the holes of the reaction box and the tray are the same in size.

Preferably, the support wall bodies are of rectangular structures with holes in the middle, and four support wall bodies are arranged and are fixedly connected with each other.

Preferably, the number of the rubber pads is four, the rubber pads are of cylindrical structures and are fixed above the tray, and the rubber pads are all arranged below the wafer.

Preferably, the support plate is of a square structure made of metal, the support plate is larger than a region surrounded by the support wall, the middle of the support plate is of a hollow structure, and the area of the hollow region is larger than that of the tray.

Preferably, the hot air flow pipe is arranged above the heating box, a spray head is arranged at the top end of the hot air flow pipe, and the spray head is arranged inside the reaction box.

Compared with the prior art, the beneficial effects of the utility model are that: this heating device is used in wafer test, the structure sets up rationally, has installed the temperature tester in the reaction box, can detect the temperature that gets into the hot-air in the reaction box, hot-air outlet pipe is provided with the shower nozzle, can avoid the speed that the hot-air got into the reaction box, and the reaction box is sealed structure when the reaction begins, and the hot-air is full of the reaction box, has avoided the wafer to be heated the uneven condition, and the accurate operation of better assurance wafer test promotes the development of semiconductor trade.

Drawings

FIG. 1 is a front view of the structure of the present invention;

FIG. 2 is a schematic top view of the structure of the present invention;

FIG. 3 is a schematic view of the structure of the telescopic device of the present invention;

fig. 4 is a schematic view of the structure reaction box of the present invention.

In the figure: 1. a base plate; 2. a base; 3. a telescoping device; 4. a tray; 5. a rubber pad; 6. a wafer; 7. a support pillar; 8. a support plate; 9. supporting the wall; 10. a reaction box; 11. a reaction chamber hole; 12. a temperature measuring instrument; 13. an air inflow pipe; 14. a heating box; 15. a heater; 16. a hot air flow duct; 17. a spray head; 18. an air outflow pipe; 19. and (4) a valve.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1-4, the present invention provides a technical solution: a heating device for wafer testing comprises a base 2, a reaction box 10, a supporting wall 9, a rubber pad 5 and a hot air flow pipe 16, wherein the base 2 is fixed above a bottom plate 1, a telescopic device 3 is arranged above the base 2, a tray 4 is connected above the telescopic device 3, the rubber pad 5 is arranged on the surface of the tray to reduce the contact area between a wafer 6 and the tray 4, the wafer 6 is placed above the rubber pad 5 to ensure that the wafer 6 is heated more uniformly, a supporting plate 8 is fixed above the wafer 6, a supporting column 7 is fixed below the supporting plate 8 to support the whole device, the supporting wall 9 is fixed above the supporting plate 8, the reaction box 10 is arranged above the supporting wall 9, the bottom of the reaction box 10 is provided with a reaction box hole 11, in order to ensure that the telescopic device 3 drives the wafer 6 to enter the reaction box, the left side of the heating box 14 is connected with an air flow pipe 13, and the, the air entering the heating box 14 is heated, the temperature measuring instrument 12 is arranged inside the left side of the reaction box 10 and can constantly monitor the temperature in the reaction box 10, the air outflow pipe 18 is arranged on the right side of the reaction box 10 to avoid overlarge pressure in the reaction box 10, the valve 19 is arranged above the air outflow pipe 18 and controls the outflow of the air in the reaction box 10, the reaction box 10 is made of transparent glass and is convenient for observing the condition in the reaction box 10, the reaction box hole 11 is circular, the reaction box hole 11 and the tray 4 are the same in size and are convenient for forming a sealing structure, the supporting wall 9 is of a rectangular structure with a hole in the middle, four supporting walls 9 are arranged and are fixedly connected with each other, four rubber pads 5 are arranged, the rubber pads 5 are of cylindrical structures and are fixed above the tray 4, and the rubber pads 5 are all arranged below the wafer 6, the support plate 8 is a square structure made of metal, the service life is prolonged, the support plate 8 is larger than a region surrounded by the support wall 9, the middle of the support plate 8 is of a hollow structure, the area of the hollow region is larger than that of the tray 4, the hot air flow pipe 16 is arranged above the heating box 14, the top end of the hot air flow pipe 16 is provided with a spray head 17, and the spray head 17 is arranged inside the reaction box 10.

The working principle is as follows: when the heating device for the wafer test is used, when the device starts to work, firstly, a wafer 6 is stably placed on a rubber pad 5, then, a telescopic device 3 starts to extend upwards, penetrates through a supporting plate 8 and a supporting wall body 9, then, penetrates through a reaction box hole 11 and stops, at the moment, a tray 4 and a reaction box 10 form a sealing structure, then, air enters a heating box 14 from an air inflow pipe 13, is heated by a heater 15 and moves through a hot air flow pipe 16, then, the air is sprayed out from a spray head 17, so that the reaction box 10 is filled with the hot air, the temperature in the reaction box 10 is monitored by a temperature measuring instrument 12, and cold air can be discharged from an air outflow pipe 18 by opening a valve 19, so that the whole working process of the heating device for the wafer test is completed.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. The utility model provides a heating device is used in wafer test, includes base (2), reaction box (10), support wall body (9), rubber pad (5) and hot air flow pipe (16), its characterized in that: the base (2) is fixed above the bottom plate (1), the telescopic device (3) is arranged above the base (2), a tray (4) is connected above the telescopic device (3), a rubber pad (5) is arranged on the surface of the tray, a wafer (6) is placed above the rubber pad (5), a supporting plate (8) is fixed above the wafer (6), a supporting column (7) is fixed below the supporting plate (8), a supporting wall body (9) is fixed above the supporting plate (8), a reaction box (10) is arranged above the supporting wall body (9), a reaction box hole (11) is arranged at the bottom of the reaction box (10), an air inflow pipe (13) is connected to the left side of the heating box (14), a heater (15) is arranged on the right side of the heating box (14), a temperature measuring instrument (12) is arranged inside the left side of the reaction box (10), and an air outflow pipe (18) is arranged on the right side of, and a valve (19) is arranged above the air outflow pipe (18).

2. The heating device for wafer testing as set forth in claim 1, wherein: the reaction box (10) is made of transparent glass, the reaction box holes (11) are circular, and the reaction box holes (11) and the tray (4) are the same in size.

3. The heating device for wafer testing as set forth in claim 1, wherein: the supporting wall bodies (9) are of a rectangular structure with a hole in the middle, four supporting wall bodies (9) are arranged, and the adjacent supporting wall bodies are fixedly connected with each other.

4. The heating device for wafer testing as set forth in claim 1, wherein: the number of the rubber pads (5) is four, the rubber pads (5) are of cylindrical structures and are fixed above the tray (4), and the rubber pads (5) are all arranged below the wafer (6).

5. The heating device for wafer testing as set forth in claim 1, wherein: the support plate (8) is of a square structure made of metal materials, the support plate (8) is larger than a region surrounded by the support wall body (9), the middle of the support plate (8) is of a hollow structure, and the area of the hollow region is larger than that of the tray (4).

6. The heating device for wafer testing as set forth in claim 1, wherein: the hot air flow pipe (16) is arranged above the heating box (14), a spray head (17) is arranged at the top end of the hot air flow pipe (16), and the spray head (17) is arranged inside the reaction box (10).