CN212426178U

CN212426178U - Chemical deposition gas diffusion plate

Info

Publication number: CN212426178U
Application number: CN202020606529.9U
Authority: CN
Inventors: 李东一; 梁君
Original assignee: Chongqing Zhenbao Industrial Co ltd
Current assignee: Chongqing Zhenbao Technology Co ltd
Priority date: 2020-04-21
Filing date: 2020-04-21
Publication date: 2021-01-29
Anticipated expiration: 2030-04-21

Abstract

The utility model discloses a chemical deposition gas diffusion plate, including the body that is circular platelike structure, the distribution has the diffusion hole that link up from top to bottom on the body, just the circumference evenly distributed of body is followed in the diffusion hole. Under the premise of not changing the general structure of the existing upper electrode, the diffusion plate can ensure that the entering deposition gas is diffused in an advection posture above the diffusion plate and then is deposited on the surface of a product after passing through the upper electrode at a stable and uniform flow and flow rate, thereby greatly improving the uniformity of chemical deposition, ensuring the quality of a vapor deposition film of the product, and improving the yield of the product.

Description

Chemical deposition gas diffusion plate

Technical Field

The utility model relates to a Chemical Vapor Deposition (CVD) equipment field, it is used for depositing required film at the base plate surface, concretely relates to gaseous diffuser plate of chemical deposition.

Background

In the production and development of products such as liquid crystal display panels, a chemical vapor deposition method is generally adopted to form a desired thin film on the surface, the process is usually completed in a special process chamber, the process chamber is provided with an upper electrode which is arranged corresponding to a bearing platform except for the bearing platform used for fixing the product, the upper electrode is distributed with air holes, and the process chamber is provided with the gas guide plate above the upper electrode, and the chemical deposition gas is diffused all around through the main pore passage arranged in the gas guide plate and the guide structure arranged at the end part of the main pore passage, and finally is deposited on the surface of the product through the air hole on the upper electrode.

SUMMERY OF THE UTILITY MODEL

In order to solve the problem, the utility model provides a chemical deposition gas diffusion plate for supplementary improvement gas diffusion degree of consistency guarantees product vapor deposition film quality, improves the yields of product promptly.

In order to achieve the above purpose, the utility model discloses technical scheme as follows:

the chemical deposition gas diffusion plate is characterized in that: the diffusion plate comprises a body in a circular plate-shaped structure, wherein diffusion holes which are communicated up and down are distributed in the body, and the diffusion holes are uniformly distributed along the circumferential direction of the body.

Scheme more than adopting, install the diffuser plate during the use between air guide plate and the upper portion electrode in the process chamber, when carrying out chemical deposition, outside chemical deposition is gaseous after passing through the filling hole, again via the effect of diffuser plate, evenly spread the top to the upper portion electrode, the gas pocket evenly deposition on the rethread upper portion electrode is to the product of below, effect through the diffuser plate, constitute the state of similar advection layer between diffuser plate and air guide plate, can effectively guarantee to get into the chemical gas's of upper portion electrode gas velocity of flow and flow unanimous, and then guarantee that the gaseous phase of deposiing to the product surface is even, reach the purpose that improves product surface deposition film quality.

Preferably, the method comprises the following steps: the distribution density of the diffusion holes at the outer edge of the body is greater than that of the diffusion holes in the central area of the body. By adopting the diffusion hole distribution mode, the phenomenon that the middle part of the product is thick due to the fact that the middle part of the product is filled with gas and reaches the upper electrode from the diffusion hole in the middle part can be effectively avoided, injected gas can be blocked to a certain degree, good circumferential diffusion force is guaranteed, and the advection effect is enhanced.

Preferably, the method comprises the following steps: the body is radially divided into at least two annular distribution areas, and the distribution density of diffusion holes in the adjacent distribution areas increases progressively from inside to outside in an equal difference mode. By adopting the scheme, in the actual use process, the body can be divided according to the sizes of the injection holes in the upper gas guide plate, the structure of the guide plate, the physical properties of chemical deposition gas and the like, and the diffusion holes are arranged in each region in the distribution mode, so that the condition that the gas flow and the flow speed uniformity are influenced due to the jumping increase of the diffusion holes can be effectively avoided.

Preferably, the method comprises the following steps: the circumference outer edge of body has evenly distributed's screw. By adopting the scheme, because the area of the diffusion plate is smaller than that of the upper electrode, the diffusion plate can be fixed on the gas guide plate above through the screw holes, the downward deposition path of the interference gas is favorably avoided, the gas can be freely diffused above the upper electrode, and the gas missing area is prevented.

Compared with the prior art, the beneficial effects of the utility model are that:

adopt the utility model provides a gaseous diffuser plate of chemical deposition under the current upper portion electrode gross structure prerequisite not changing, through the diffuser plate, can make the gaseous deposit that gets into behind the diffuser plate top with advection gesture diffusion, deposit the product surface behind the electrode through upper portion with comparatively stable even flow and velocity of flow again, improve the chemical deposition degree of consistency etc. greatly, guarantee product vapor deposition film quality, improve the product yields promptly.

Drawings

Fig. 1 is a schematic structural view of the present invention;

fig. 2 is a schematic view of the usage state of the present invention.

Detailed Description

The present invention will be further described with reference to the following examples and accompanying drawings.

Referring to fig. 1 and 2, the diffusion plate for chemical deposition gas mainly includes a body 3 having a substantially circular thin plate shape, and the diffusion holes 30 are circular holes, and the diffusion holes 30 are uniformly distributed along the circumferential direction of the body 3, that is, the diffusion holes 30 on any one circumference of the body 3 are uniformly distributed on the circumference.

Secondly, the distribution density of the diffusion holes 30 at the outer edge of the body 3 is greater than the distribution density of the diffusion holes 30 at the central area of the body 3, specifically, as shown in the figure, the body 3 is divided into a plurality of different diameter distribution areas 33 from inside to outside, the distribution density of the diffusion holes 30 in the same distribution area 33 is equal, that is, the diffusion holes 30 on any diameter circumference in the same distribution area 33 are equal in number and are uniformly distributed, and the distribution density of the diffusion holes 30 in the adjacent distribution areas 33 is increased in number in an equal difference from inside to outside, for example, in this embodiment, the body 1 is divided into five distribution areas 33 according to the upper gas guide plate structure in actual use, which are a first distribution area 33a, a second distribution area 33b, a third distribution area 33c, a fourth distribution area 33d and a fifth distribution area 33e, wherein the first distribution area 33a is provided with a circle of diffusion holes 30, the number of the diffusion holes 30 is 8, the second distribution area 33b is provided with five circles of diffusion, each circle is provided with 16 uniformly distributed diffusion holes 30, fourteen circles of diffusion holes 30 are arranged in the third distribution area 33c, each circle is provided with 32 uniformly distributed diffusion holes 30, and so on, each circle is provided with 256 diffusion holes 30 in the fifth distribution area 33e, and it is noted that the distance between every two adjacent diffusion holes 30 in the same radial direction on the diffusion plate 30 is equal.

In order to facilitate installation and connection, the circumferential outer edge of the body 3 is provided with screw holes 31 which are uniformly distributed, and the screw holes 31 can be through holes with internal threads or can be through holes directly for screws to pass through.

Referring to the diffusion plate for chemical deposition gas shown in fig. 1 and 2, the present invention is applied to a chemical deposition process chamber, as shown in the figure, the process chamber 5 mainly comprises an air guide plate 1 and an upper electrode 2 which are arranged oppositely up and down, wherein the middle part of the gas guide plate 1 is provided with an injection hole 10 which is arranged right opposite to the upper electrode 2, the upper electrode 2 is provided with air holes 20 which are uniformly distributed, in the prior chemical deposition process, chemical deposition gas mainly enters an upper half chamber of the working procedure chamber 5 through the injection hole 10, then passes through the air holes 20 on the upper electrode 2, deposits on the surface of the raw material 7 on the lower electrode 6, the conventional process, in which a thin film is formed on the surface of the raw material 7, is limited by the volume of the process chamber 5, the height distance between the upper and lower electrodes, and the like, often results in uneven quality of the thin film deposited on the raw material 7, which greatly reduces the quality of the finished product.

Will during the use the utility model discloses a diffuser plate is installed at air guide 1 and upper portion electrode 2, as shown in the figure, air guide 1, body 3 and upper portion electrode 2 three are from last to down parallel arrangement in proper order, and central point puts just right, body 3 passes through screw 32 and air guide 1 fixed connection, air guide 1 and upper portion electrode 2 are rectangle platelike structure, and air guide 1's length width is greater than upper portion electrode 2's length width, in order to ensure to cover upper portion electrode 2's area completely, and body 1's area is less than upper portion electrode 2's area.

In addition, gas guide plate 1 is last to correspond injection hole 10 bottom position and is equipped with deflector 4, chemical gas introduces injection hole 10 in the outside, at first through the effect of deflector 4 last guiding hole, make gaseous have good outer effect of expanding, gaseous after to diffusion all around, rethread body 3 blocks the dispersion, form a gas layer similar stratosphere in the top of body 3, make gaseous distribution tend to even after, downward deposit again, deposit to raw and other materials 7's surface behind the gas pocket 20 on upper electrode 2, finally reach the effect that improves the product surface deposition film degree of consistency.

Finally, it should be noted that the above description is only a preferred embodiment of the present invention, and those skilled in the art can make various similar representations without departing from the spirit and the scope of the present invention.

Claims

1. A chemical deposition gas diffusion plate, comprising: the diffusion device comprises a body (3) in a circular plate-shaped structure, wherein diffusion holes (30) which are communicated up and down are distributed in the body (3), and the diffusion holes (30) are uniformly distributed along the circumferential direction of the body (3);

the distribution density of the diffusion holes (30) on the outer edge of the body (3) is greater than that of the diffusion holes (30) in the central area of the body (3), the body (3) is radially divided into at least two annular distribution areas (33), and the distribution density of the diffusion holes (30) in the adjacent distribution areas (33) is gradually increased from inside to outside in an equal difference mode.

2. The chemical deposition gas diffusion plate according to claim 1, wherein: the circumference of the body (3) is provided with evenly distributed screw holes (31) along the outer edge.