CN212410029U - Silicon-based OLED probe testing device - Google Patents

Abstract

The utility model discloses a silicon-based OLED probe testing arrangement, include the regulator cubicle and establish the testboard on the regulator cubicle, but be equipped with probe platform and be located probe bench side horizontal migration's portal frame on the testboard, but probe bench is equipped with and is used for removing to prick the peripheral PAD of Wafer and carries out two probes that the full-screen was lighted, the lower part of portal frame corresponds the probe platform and is equipped with detection camera and spectrum appearance. Two probes are used for pricking peripheral PADs to supply power to Die so that the Wafer full screen is lightened, then an area array camera or a TDI linear array camera is used for carrying out rapid imaging analysis on the Wafer full screen, a probe card is not needed, and the Tact Time can be reduced by 76.8% compared with the conventional automatic probe station for testing the silicon-based OLED, so that the testing efficiency is improved, and the binding PADs cannot be damaged.

Description

Silicon-based OLED probe testing device

Technical Field

The utility model belongs to the technical field of silicon-based OLED test technique and specifically relates to a silicon-based OLED probe testing arrangement is related to.

Background

In the semiconductor display industry, particularly the silicon-based OLED industry, an automatic probe station is an important step for testing photoelectric parameters, and the conventional test scheme is that a probe card is used for pricking a needle on the surface of a Wafer, and then an AOI (automatic optical inspection) and a spectrometer are moved to test the photoelectric parameters of Die; however, because the silicon-based OLED industry needs to test the spectrum and the AOI is poor in test, the probe on the probe card cannot shield the Die display area, so that the probe card can only light up a plurality of dice at one time, and the probe card moves to the next Die group to continue the test after the testing of the dice, thereby causing the waste of time generated by Wafer movement and complicated test operation; and the probe can damage the Bonding PAD, and the more the number of the probe card is, the higher the cost is, and the higher the probability of damage is.

SUMMERY OF THE UTILITY MODEL

Not enough to prior art, the utility model provides a silicon-based OLED probe testing arrangement, it need not to visit the card, can accomplish the test fast, has improved efficiency of software testing.

In order to solve the technical problem, the utility model discloses the technical scheme who adopts is:

the utility model provides a silicon-based OLED probe testing arrangement, includes the regulator cubicle and establishes the testboard on the regulator cubicle, but be equipped with probe platform and be located the portal frame of probe platform top horizontal migration on the testboard, be equipped with on the probe platform and be used for removing to prick two probes that Wafer peripheral PAD carries out the full-screen and lights, the lower part of portal frame is equipped with detection camera and spectrum appearance corresponding probe platform.

And the detection camera and the spectrometer on the lower part of the portal frame can be adjusted and arranged in a lifting way along the vertical direction.

The detection camera is a linear array camera or an area array camera.

The detection camera and the spectrometer are arranged side by side.

The probe is a movably arranged probe structure.

The portal frame is a rack capable of moving along the X/Y direction.

The movement precision of the portal frame is 0.8-1 μm.

The moving precision of the detection camera and the spectrometer is 0.08-0.1 μm.

Compared with the prior art, the utility model, have following advantage:

this silicon-based OLED probe testing arrangement structural design is reasonable, uses two probes to prick and makes the Wafer full screen light for the Die power supply on peripheral PAD, uses area array camera or TDI linear array camera to carry out quick imaging analysis to the Wafer full screen again, need not the probe card, can test fast and make Tact Time than traditional automatic probe platform test silicon-based OLED reduce 76.8%, has improved efficiency of software testing, and can not cause the damage to binding PAD.

Drawings

The contents of the description and the references in the drawings are briefly described as follows:

fig. 1 is a schematic view of the device of the present invention.

Fig. 2 is a schematic view of the test board of the present invention.

Fig. 3 is a schematic view of the Wafer sheet of the present invention.

Fig. 4 is an integrated schematic view of Die unit needle inserting module of the present invention.

In the figure:

1. the system comprises a display screen interaction system, 2, a loading and unloading mechanism, 3, a mechanism part, 4, a test board, 401, a portal frame, 402, a spectrometer, 403, a Wafer, 4031, a Die unit, 403101, a pricking module, 4032, a peripheral module, 404, a detection camera, 405, a probe and 5, an electrical cabinet.

Detailed Description

The following description of the embodiments of the present invention will be made in detail with reference to the accompanying drawings.

As shown in fig. 1 to 4, the silicon-based OLED probe testing apparatus includes an electrical cabinet 5 and a testing table 4 disposed on the electrical cabinet, the testing table is provided with a probe table and a gantry 401 located above the probe table and capable of moving horizontally, the gantry can move in X/Y directions, any position of a formed plane can be reached, the probe table is provided with two probes 405 for removing a Wafer 403 and lighting a PAD on a full screen, and a detection camera 404 and a spectrometer 402 are disposed at a lower portion of the gantry corresponding to the probe table.

The device also comprises a display screen interaction system 1, a feeding and discharging mechanism 2 and a mechanism part 3, wherein the mechanism part is arranged in parallel with the electrical cabinet 5, and the display screen interaction system and the feeding and discharging mechanism are arranged on the mechanism part, so that the testing efficiency is improved; the mechanism part 3 mainly comprises a manipulator Wafer conveying mechanism, a Wafer aligning mechanism and a buffer area.

The gantry 401 is a gantry movable in the X/Y direction; the movement precision of the portal frame is 0.8-1 μm. The detection camera and the spectrometer at the lower part of the portal frame can be adjusted and arranged in a lifting way along the vertical direction; the moving precision of the detection camera and the spectrometer is 0.08-0.1 μm.

The probe is a movably arranged probe structure. The detection camera and the spectrometer are arranged side by side, and the detection camera is a linear array camera or an area array camera.

The testing method using the silicon-based OLED probe testing device comprises the following steps:

the Wafer (Wafer) peripheral PAD is designed on the edge of the Wafer, and the pin module 403101PAD on each Die unit (chip unit) 4031 is integrated on the Wafer peripheral module 4032PAD through wiring;

the Wafer is placed on a probe station of a test bench, and two probes carried by the probe station are used for pricking a PAD (PAD application area) at the periphery of the Wafer to light the whole screen;

after the area array or linear array camera is lightened in a full screen mode, quickly imaging the Wafer along the X/Y direction after the Z-axis focal length adjustment is carried out on the area array or linear array camera; after the camera rapidly images, the spectrometer performs spectrum test of each Die;

after the spectrometer test is finished, Wafer performs Unload movement, and at the moment, the computer system starts to process test data and output a test report.

Furthermore, the needle PAD on each Die is led to two peripheral large PADs in a wiring manner to be lighted.

The utility model changes the product design, and connects all the lightening PADs of Die to the PAD on the periphery of Wafer in a wiring way; the probe station adopts a movable probe to replace a probe card, so that the cost of replacing the probe card is saved, the Wafer does not need to move, the area array or TDI linear array AOI and a spectrometer move to perform testing, and the testing efficiency is improved.

Preferred specific examples are:

firstly, the silicon-based OLED full screen is lightened only by pricking a GND PAD and a COM PAD, the GND PAD and the COM PAD of each Die are connected to a single general PAD on the periphery of a Wafer display area in the product design process, and the Wafer can be lightened in the full screen mode only by positive voltage of the GND and negative voltage of the COM;

the automatic probe station is provided with two probes 405, the probes 405 are adjustable in position, the probes 405 are tied to GND and COMPAD to respectively supply positive pressure and negative pressure, and the Wafer can be lightened in a full screen manner;

if the test frame is only W:

the automatic probe station is integrated with a TDI linear array camera AOI404 or an area array camera AOI404 to image the Wafer, the application of the TDI linear array camera AOI404 or the area array camera AOI404 can greatly shorten the AOI detection time for testing, and the time for testing the 8-inch Wafer by using the TDI linear array camera with the 8K phase element size of 3.1 mu m is about 63 s; the time for testing an 8 inch Wafer with an area-array camera having an 8K phase element size of 3.1 μm was about 66 seconds.

The automated probe station is integrated with a spectrometer 402, with spectrometer 402 testing 1 Die for about 1s and moving to the next Die for about 1.5s, so the total spectrometer test time is 650s (as per 260Die on Wafer); therefore, the Tact Time for testing the W picture by the automatic probe station is about 12.3min, which is reduced by 76.8 percent compared with 53.1min for testing the W picture by the existing probe station, and the cost of probe card is saved.

The utility model discloses in use two probes to prick and make the Wafer full screen light for the Die power supply on peripheral PAD, reuse area array camera or TDI linear array camera to carry out quick imaging analysis to the Wafer full screen, need not the probe card, can test fast and make Tact Time reduce 76.8% than traditional automatic probe platform test silica-based OLED, improved efficiency of software testing, and can not cause the damage to binding PAD.

The above-mentioned is only for the description of the preferred embodiments of the present invention, and the above-mentioned technical features can be combined at will to form a plurality of embodiments of the present invention.

The present invention has been described in detail with reference to the accompanying drawings, and it is apparent that the present invention is not limited by the above embodiments, and various insubstantial improvements can be made without modification to the present invention.

Claims (8)

1. The utility model provides a silicon-based OLED probe testing arrangement, includes the regulator cubicle and establishes the testboard on the regulator cubicle, its characterized in that: the device comprises a test bench, a probe platform and a portal frame, wherein the portal frame is positioned above the probe platform and can move horizontally, the probe platform is provided with two probes for removing and binding a Wafer peripheral PAD to light the whole screen, and the lower part of the portal frame is provided with a detection camera and a spectrometer corresponding to the probe platform.

2. The silicon-based OLED probe test device of claim 1, wherein: and the detection camera and the spectrometer on the lower part of the portal frame can be adjusted and arranged in a lifting way along the vertical direction.

3. The silicon-based OLED probe test device of claim 1, wherein: the detection camera is a linear array camera or an area array camera.

4. The silicon-based OLED probe test device of claim 1, wherein: the detection camera and the spectrometer are arranged side by side.

5. The silicon-based OLED probe test device of claim 1, wherein: the probe is a movably arranged probe structure.

6. The silicon-based OLED probe test device of claim 1, wherein: the portal frame is a rack capable of moving along the X/Y direction.

7. The silicon-based OLED probe test device of claim 1, wherein: the movement precision of the portal frame is 0.8-1 μm.

8. The silicon-based OLED probe test device of claim 2, wherein: the moving precision of the detection camera and the spectrometer is 0.08-0.1 μm.

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